页 52 - Taiwan Semiconductor Corporation 产品 | 黑森尔电子
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Taiwan Semiconductor Corporation 产品

记录 4,299
页  52/154
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1SMC5352 R7G
Taiwan Semiconductor Corporation

DIODE, ZENER, 15V, 5000MW, %, DO

  • Voltage - Zener (Nom) (Vz): 15V
  • Tolerance: ±5%
  • Power - Max: 5W
  • Impedance (Max) (Zzt): 2.5 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 11.5V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
封装: DO-214AB, SMC
库存2,048
1M130ZHR0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 130V, 1000MW, 5%,

  • Voltage - Zener (Nom) (Vz): 130V
  • Tolerance: ±5%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 700 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 98.8V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
封装: DO-204AL, DO-41, Axial
库存4,096
1M110ZHR0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 110V, 1000MW, 5%,

  • Voltage - Zener (Nom) (Vz): 110V
  • Tolerance: ±5%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 450 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 83.6V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
封装: DO-204AL, DO-41, Axial
库存6,960
BZX85C3V6 R0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 3.6V, 1300MW, 5%,

  • Voltage - Zener (Nom) (Vz): 3.6V
  • Tolerance: ±5%
  • Power - Max: 1.3W
  • Impedance (Max) (Zzt): 20 Ohms
  • Current - Reverse Leakage @ Vr: 20µA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
封装: DO-204AL, DO-41, Axial
库存2,624
BZY55B18 RYG
Taiwan Semiconductor Corporation

DIODE, ZENER, 18V, 500MW, 2%, 08

  • Voltage - Zener (Nom) (Vz): 18V
  • Tolerance: ±2%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 50 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 13V
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 0805 (2012 Metric)
  • Supplier Device Package: 0805
封装: 0805 (2012 Metric)
库存2,080
DBLS151G C1G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1.5A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 2µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBLS
封装: 4-SMD, Gull Wing
库存2,016
DBLS105GHC1G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 2µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBLS
封装: 4-SMD, Gull Wing
库存7,776
DBLS104GHC1G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 2µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBLS
封装: 4-SMD, Gull Wing
库存7,456
1N4750G
Taiwan Semiconductor Corporation

DO-204AL (DO-41), 1000MW, 5%, SM

  • Voltage - Zener (Nom) (Vz): 27 V
  • Tolerance: ±5%
  • Power - Max: 1 W
  • Impedance (Max) (Zzt): 35 Ohms
  • Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
  • Operating Temperature: -65°C ~ 200°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
封装: -
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BZY55C12
Taiwan Semiconductor Corporation

0805 (CERAMICS), 500MW, 5%, SMAL

  • Voltage - Zener (Nom) (Vz): 12 V
  • Tolerance: ±5%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): 20 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 0805 (2012 Metric)
  • Supplier Device Package: 0805
封装: -
Request a Quote
BZV55C3V3
Taiwan Semiconductor Corporation

MMELF, 500MW, 5%, SMALL SIGNAL Z

  • Voltage - Zener (Nom) (Vz): 3.3 V
  • Tolerance: ±5%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): 85 Ohms
  • Current - Reverse Leakage @ Vr: 2 µA @ 1 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: Mini MELF
封装: -
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1PGSMC5369-V7G
Taiwan Semiconductor Corporation

DIODE ZENER 5W DO214AB

  • Voltage - Zener (Nom) (Vz): 51 V
  • Tolerance: ±5%
  • Power - Max: 5 W
  • Impedance (Max) (Zzt): 27 Ohms
  • Current - Reverse Leakage @ Vr: 500 nA @ 38.8 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
封装: -
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HER1008GH
Taiwan Semiconductor Corporation

DIODE ARRAY GP 1000V 10A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: -
库存3,000
S1JFS
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A SOD128

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存83,988
SRT12H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 20V 1A TS-1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 20 V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 125°C
封装: -
Request a Quote
1PGSMA200ZHR3G
Taiwan Semiconductor Corporation

DIODE ZENER 200V 1.25W DO214AC

  • Voltage - Zener (Nom) (Vz): 200 V
  • Tolerance: ±5%
  • Power - Max: 1.25 W
  • Impedance (Max) (Zzt): 1500 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 152 V
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
封装: -
库存6
MMBD3004
Taiwan Semiconductor Corporation

SOT-23, 350V, 0.225A, SWITCHING

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 350 V
  • Current - Average Rectified (Io): 225mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 240 V
  • Capacitance @ Vr, F: 5pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: -
Request a Quote
1SMA4742
Taiwan Semiconductor Corporation

DIODE ZENER 12V 1.25W DO214AC

  • Voltage - Zener (Nom) (Vz): 12 V
  • Tolerance: ±5%
  • Power - Max: 1.25 W
  • Impedance (Max) (Zzt): 9 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
封装: -
库存22,500
TUAU8MH
Taiwan Semiconductor Corporation

80NS, 8A, 1000V, HIGH EFFICIENT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 43pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: SMPC4.6U
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存18,000
1PGSMA4746HR3G
Taiwan Semiconductor Corporation

DIODE ZENER 18V 1.25W DO214AC

  • Voltage - Zener (Nom) (Vz): 18 V
  • Tolerance: ±5%
  • Power - Max: 1.25 W
  • Impedance (Max) (Zzt): 20 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 13.7 V
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
封装: -
库存90
BZY55B3V3
Taiwan Semiconductor Corporation

0805 (CERAMICS), 500MW, 2%, SMAL

  • Voltage - Zener (Nom) (Vz): 3.3 V
  • Tolerance: ±2%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): 85 Ohms
  • Current - Reverse Leakage @ Vr: 2 µA @ 1 V
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 0805 (2012 Metric)
  • Supplier Device Package: 0805
封装: -
Request a Quote
TQM300NB06DCR-RLG
Taiwan Semiconductor Corporation

MOSFET 2N-CH 60V 6A/25A 8PDFNU

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V
  • Power - Max: 2.5W (Ta), 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-PDFNU (5x6)
封装: -
库存15,000
TSM60NC165CI
Taiwan Semiconductor Corporation

600V, 24A, SINGLE N-CHANNEL POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1857 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ITO-220
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
封装: -
Request a Quote
TSD20H150CW
Taiwan Semiconductor Corporation

DIODE ARRAY SCHOT 20A TO263AB

  • Diode Configuration: -
  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
封装: -
库存6
RS2MFL
Taiwan Semiconductor Corporation

250NS, 2A, 1000V, FAST RECOVERY

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存29,940
BZD17C24P
Taiwan Semiconductor Corporation

SUB SMA, 800MW, 6%, ZENER DIODE

  • Voltage - Zener (Nom) (Vz): 24 V
  • Tolerance: ±5.79%
  • Power - Max: 800 mW
  • Impedance (Max) (Zzt): 15 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 18 V
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: Sub SMA
封装: -
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RTBS60M
Taiwan Semiconductor Corporation

500NS, 6A, 1000V, FAST RECOVERY

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 6 A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: TBS
封装: -
库存5,289
BC337-25
Taiwan Semiconductor Corporation

TO-92, 50V, 0.8A, NPN BIPOLAR TR

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 5V
  • Power - Max: 625 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
封装: -
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