Toshiba Semiconductor and Storage 产品

2SK2866(F)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 10A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 10V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封装: TO-220-3

TK39N60W,S1VF

Toshiba Semiconductor and Storage

MOSFET N CH 600V 38.8A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 300V
• Vgs (Max): ±30V
• FET Feature: Super Junction
• Power Dissipation (Max): 270W (Tc)
• Rds On (Max) @ Id, Vgs: 65 mOhm @ 19.4A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

封装: TO-247-3

SSM5N15FU,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 0.1A USV

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 7.8pF @ 3V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200mW (Ta)
• Rds On (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: USV
• Package / Case: 5-TSSOP, SC-70-5, SOT-353

封装: 5-TSSOP, SC-70-5, SOT-353

TPC8212-H(TE12LQ,M

Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 6A SOP8

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6A
• Rds On (Max) @ Id, Vgs: 21 mOhm @ 3A, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
• Power - Max: 450mW
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.173", 4.40mm Width)
• Supplier Device Package: 8-SOP (5.5x6.0)

封装: 8-SOIC (0.173", 4.40mm Width)

RN1106,LF(CT

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1W SSM

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

封装: SC-75, SOT-416

TA76432AS,T6F(J

Toshiba Semiconductor and Storage

IC REG LINEAR 15MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 15mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

封装: TO-226-3, TO-92-3 Long Body

TA48S05AF(T6L1,Q)

Toshiba Semiconductor and Storage

IC REG LINEAR 5V 1A 5HSIP

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 16V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.69V @ 1A (Typ)
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 1.7mA ~ 20mA
• PSRR: 60dB (120Hz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-6, DPak (5 Leads + Tab)
• Supplier Device Package: 5-HSIP

封装: TO-252-6, DPak (5 Leads + Tab)

TBD62502AFG,EL

Toshiba Semiconductor and Storage

IC LOAD SWITCH 7CH 0.3A 16SOP

• Switch Type: General Purpose
• Number of Outputs: 7
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 50V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.75A
• Rds On (Typ): -
• Input Type: Inverting
• Features: -
• Fault Protection: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SOIC (0.173", 4.40mm Width)
• Supplier Device Package: 16-SOP

封装: 16-SOIC (0.173", 4.40mm Width)

TC7SET02FU,LJ(CT

Toshiba Semiconductor and Storage

IC GATE NOR 1CH 2-INP USV

• Logic Type: NOR Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.8V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: USV
• Package / Case: 5-TSSOP, SC-70-5, SOT-353

封装: 5-TSSOP, SC-70-5, SOT-353

TL3GB-LW1,L

Toshiba Semiconductor and Storage

LED LETERAS WARM WHT 3000K 2SMD

• Color: White, Warm
• CCT (K): 3000K
• Flux @ 85°C, Current - Test: -
• Flux @ 25°C, Current - Test: 61 lm (56 lm ~ 66 lm)
• Current - Test: 100mA
• Voltage - Forward (Vf) (Typ): 5.76V
• Lumens/Watt @ Current - Test: 106 lm/W
• CRI (Color Rendering Index): 80
• Current - Max: 200mA
• Viewing Angle: -
• Mounting Type: Surface Mount
• Package / Case: 1212 (3030 Metric)
• Supplier Device Package: 3030
• Size / Dimension: 0.118" L x 0.118" W (3.00mm x 3.00mm)
• Height - Seated (Max): 0.030" (0.77mm)

封装: 1212 (3030 Metric)

DF3A3.6CT(TPL3)

Toshiba Semiconductor and Storage

TVS DIODE 1VWM CST3

• Type: Zener
• Unidirectional Channels: 2
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 1V
• Voltage - Breakdown (Min): 3.1V
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 110pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SC-101, SOT-883
• Supplier Device Package: CST3

封装: SC-101, SOT-883

DF2B7ACT,L3F

Toshiba Semiconductor and Storage

ESD DIODE BI-DIRECTIONAL

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 5.5V (Max)
• Voltage - Breakdown (Min): 5.8V
• Voltage - Clamping (Max) @ Ipp: 20V
• Current - Peak Pulse (10/1000µs): 4A (8/20µs)
• Power - Peak Pulse: 80W
• Power Line Protection: No
• Applications: -
• Capacitance @ Frequency: 8.5pF @ 1MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: CST2

封装: SOD-882

TLP206GA(F)

Toshiba Semiconductor and Storage

PHOTORELAY MOSFET OUT 8-SOP

• Circuit: DPST (2 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 35 Ohm
• Load Current: 120mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 400 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 8-SOP (0.173", 4.40mm Width)
• Supplier Device Package: 8-SOP
• Relay Type: Relay

封装: 8-SOP (0.173", 4.40mm Width)

TLP227G(F)

Toshiba Semiconductor and Storage

PHOTORELAY 350V 0.12A 4-DIP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 35 Ohm
• Load Current: 120mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 350 V
• Mounting Type: Through Hole
• Termination Style: PC Pin
• Package / Case: 4-DIP (0.300", 7.62mm)
• Supplier Device Package: 4-DIP
• Relay Type: Relay

封装: 4-DIP (0.300", 7.62mm)

TLP293(BLL,E

Toshiba Semiconductor and Storage

X36 PB-F TRANSISTOR OPTOCOUPLER

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 200% @ 5mA
• Current Transfer Ratio (Max): 400% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

74HC238D

Toshiba Semiconductor and Storage

IC 3:8 LINE DECODER 16SOIC

• Type: Decoder
• Circuit: 1 x 3:8
• Independent Circuits: 1
• Current - Output High, Low: 5.2mA, 5.2mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: -
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

封装: 16-SOIC (0.154", 3.90mm Width)

TBD62304AFWG,EL

Toshiba Semiconductor and Storage

TRANSISTOR ARRAY INTERFACE DRIVE

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOP

封装: 16-SOIC (0.154", 3.90mm Width)

74HC574D

Toshiba Semiconductor and Storage

IC FF D-TYPE SNGL 8BIT 20SOIC

• Function: Standard
• Type: D-Type
• Output Type: Tri-State, Non-Inverted
• Number of Elements: 1
• Number of Bits per Element: 8
• Clock Frequency: 59MHz
• Max Propagation Delay @ V, Max CL: 33ns @ 6V, 150pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 7.8mA, 7.8mA
• Voltage - Supply: 2 V ~ 6 V
• Current - Quiescent (Iq): 4µA
• Input Capacitance: 5pF
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)

封装: 20-SOIC (0.295", 7.50mm Width)

74LCX05FT

Toshiba Semiconductor and Storage

IC INVERTER 6CH 6-INP 14TSSOP

• Logic Type: Inverter
• Number of Circuits: 6
• Number of Inputs: 6
• Features: Open Drain
• Voltage - Supply: 1.65 V ~ 5.5 V
• Current - Quiescent (Max): 10µA
• Current - Output High, Low: 24mA, 24mA
• Logic Level - Low: 0.7 V ~ 0.8 V
• Logic Level - High: 1.7 V ~ 2 V
• Max Propagation Delay @ V, Max CL: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-TSSOP
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)

封装: 14-TSSOP (0.173", 4.40mm Width)

TB9081FG

Toshiba Semiconductor and Storage

3-PHASE BI-CMOS BRUSHLESS MOTOR

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Driver
• Output Configuration: Pre-Driver
• Interface: PWM, SPI
• Technology: Bi-CMOS
• Step Resolution: -
• Applications: Automotive
• Current - Output: -
• Voltage - Supply: 3V ~ 5.5V
• Voltage - Load: 4.5V ~ 28V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

封装: 64-LQFP

TCR3UG33B,LF

Toshiba Semiconductor and Storage

300MA LDO VOUT=3.3V DROPOUT=140M

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.273V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): 680nA
• Current - Supply (Max): -
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Inrush Current, Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFBGA, WLCSP
• Supplier Device Package: 4-WCSPF (0.65x0.65)

封装: 4-XFBGA, WLCSP

TCR2LN105,LF

Toshiba Semiconductor and Storage

200MA LDO VOUT=1.05V DROPOUT=200

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.05V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.38V @ 150mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 2µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-SDFN (0.8x0.8)

封装: 4-XFDFN Exposed Pad

HN1C01F-GR-TE85L-F

Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A SM6

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
• Power - Max: 300mW
• Frequency - Transition: 800MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-74, SOT-457
• Supplier Device Package: SM6

封装: -

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SSM6K361NU-LF

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 3.5A 6UDFNB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.25W (Ta)
• Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: 6-UDFNB (2x2)
• Package / Case: 6-WDFN Exposed Pad

封装: -

TCR3DM15-LF-SE

Toshiba Semiconductor and Storage

LDO REG IOUT: 300MA VIN: 6V VOUT

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.45V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-UDFN Exposed Pad
• Supplier Device Package: 4-DFN (1x1)

封装: -

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TK33S10N1Z-LXHQ

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 33A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK+
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

TPCC8104-L1Q

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 20A 8TSON

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 10 V
• Vgs (Max): +20V, -25V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta), 27W (Tc)
• Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSON Advance (3.1x3.1)
• Package / Case: 8-PowerVDFN

封装: -

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RN2304-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 47 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SC-70

封装: -