Vishay Semiconductor Diodes Division 产品

VS-ST730C12L1L

Vishay Semiconductor Diodes Division

SCR 1200V 2000A B-PUK

• Voltage - Off State: 1200V
• Voltage - Gate Trigger (Vgt) (Max): 3V
• Current - Gate Trigger (Igt) (Max): 200mA
• Voltage - On State (Vtm) (Max): 1.62V
• Current - On State (It (AV)) (Max): 990A
• Current - On State (It (RMS)) (Max): 2000A
• Current - Hold (Ih) (Max): 600mA
• Current - Off State (Max): 80mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 15000A, 15700A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AC, B-PUK
• Supplier Device Package: TO-200AC, B-PUK

封装: TO-200AC, B-PUK

GLL4750A-E3/96

Vishay Semiconductor Diodes Division

DIODE ZENER 27V 1W MELF DO213AB

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 35 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 20.6V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: MELF DO-213AB

封装: DO-213AB, MELF

BZD27C3V9P-M3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 800MW SMF DO219-M3

• Voltage - Zener (Nom) (Vz): 3.9V
• Tolerance: -
• Power - Max: 800mW
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 50µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

封装: DO-219AB

BZX84C5V1-G3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 5.1V 300MW SOT23-3

• Voltage - Zener (Nom) (Vz): 5.1V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

TZQ5235B-GS08

Vishay Semiconductor Diodes Division

DIODE ZENER 6.8V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 6.8V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 5 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 5V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: SOD-80 QuadroMELF

封装: SOD-80 Variant

ZM4745A-GS08

Vishay Semiconductor Diodes Division

DIODE ZENER 16V 1W DO213AB

• Voltage - Zener (Nom) (Vz): 16V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 16 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 12.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF (Glass)
• Supplier Device Package: DO-213AB

封装: DO-213AB, MELF (Glass)

181NQ035

Vishay Semiconductor Diodes Division

DIODE MODULE 35V 180A HALF-PAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io): 180A
• Voltage - Forward (Vf) (Max) @ If: 660mV @ 180A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 15mA @ 35V
• Capacitance @ Vr, F: 7800pF @ 5V, 1MHz
• Mounting Type: Chassis Mount
• Package / Case: D-67 HALF-PAK
• Supplier Device Package: HALF-PAK
• Operating Temperature - Junction: -

封装: D-67 HALF-PAK

VS-40HFLR40S05

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 40A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 1.95V @ 40A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500ns
• Current - Reverse Leakage @ Vr: 100µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -40°C ~ 125°C

封装: DO-203AB, DO-5, Stud

VS-12TQ040SPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 15A D2PAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1.75mA @ 40V
• Capacitance @ Vr, F: 900pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

GP30K-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 3A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 5µs
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Capacitance @ Vr, F: 40pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-201AD, Axial

S5D-E3/57T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 5A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2.5µs
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: 40pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AB, SMC

VS-HFA06PB120-N3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 6A TO247AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 3V @ 6A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 80ns
• Current - Reverse Leakage @ Vr: 5µA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247AC Modified
• Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-247-2

MBRB2080CTTRR

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 80V D2PAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 80V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

MBRB2060CTHE3_A/I

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 60V TO263-3

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150µA @ 60V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

VS-30CTQ100STRL-M3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 15A D2PAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 860mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 550µA @ 100V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

GIB2403-E3/81

Vishay Semiconductor Diodes Division

DIODE ARRAY GP 150V 16A TO263AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io) (per Diode): 16A
• Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 50µA @ 100V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SS8P6C-M3/86A

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 60V TO277A

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io) (per Diode): 4A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 60V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)

封装: TO-277, 3-PowerDFN

VS-51MT80KPBF

Vishay Semiconductor Diodes Division

POWER MOD 3PH BRIDGE 55A MTK

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800V
• Current - Average Rectified (Io): 55A
• Voltage - Forward (Vf) (Max) @ If: -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: MT-K Module
• Supplier Device Package: MT-K

封装: MT-K Module

BU2006-E3/51

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 600V 20A BU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 3.5A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, BU
• Supplier Device Package: isoCINK+? BU

封装: 4-SIP, BU

P4KE7.5-E3/73

Vishay Semiconductor Diodes Division

TVS DIODE 6.05VWM 11.7VC AXIAL

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 6.05V
• Voltage - Breakdown (Min): 6.75V
• Voltage - Clamping (Max) @ Ipp: 11.7V
• Current - Peak Pulse (10/1000µs): 34.2A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

1.5KE68HE3/73

Vishay Semiconductor Diodes Division

TVS DIODE 55.1VWM 98VC 1.5KE

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 55.1V
• Voltage - Breakdown (Min): 61.2V
• Voltage - Clamping (Max) @ Ipp: 98V
• Current - Peak Pulse (10/1000µs): 15.3A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

封装: DO-201AA, DO-27, Axial

3KASMC17HE3/9AT

Vishay Semiconductor Diodes Division

TVS DIODE 17VWM 30.5VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 17V
• Voltage - Breakdown (Min): 18.9V
• Voltage - Clamping (Max) @ Ipp: 30.5V
• Current - Peak Pulse (10/1000µs): 98.4A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封装: DO-214AB, SMC

GSOT03C-HE3-08

Vishay Semiconductor Diodes Division

TVS DIODE 3.3VWM 12.3VC SOT23

• Type: Zener
• Unidirectional Channels: 2
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 3.3V (Max)
• Voltage - Breakdown (Min): 4V
• Voltage - Clamping (Max) @ Ipp: 12.3V
• Current - Peak Pulse (10/1000µs): 30A (8/20µs)
• Power - Peak Pulse: 369W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: 420pF @ 1MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

封装: TO-236-3, SC-59, SOT-23-3

SMBG13AHE3/52

Vishay Semiconductor Diodes Division

TVS DIODE 13VWM 21.5VC SMB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 13V
• Voltage - Breakdown (Min): 14.4V
• Voltage - Clamping (Max) @ Ipp: 21.5V
• Current - Peak Pulse (10/1000µs): 27.9A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: DO-215AA (SMBG)

封装: DO-215AA, SMB Gull Wing

P6SMB160CA-M3/5B

Vishay Semiconductor Diodes Division

TVS DIODE 136VWM 219VC DO-214AA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 136V
• Voltage - Breakdown (Min): 152V
• Voltage - Clamping (Max) @ Ipp: 219V
• Current - Peak Pulse (10/1000µs): 2.7A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

封装: DO-214AA, SMB

1.5SMC130A-E3/9AT

Vishay Semiconductor Diodes Division

TVS DIODE 111VWM 179VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 111V
• Voltage - Breakdown (Min): 124V
• Voltage - Clamping (Max) @ Ipp: 179V
• Current - Peak Pulse (10/1000µs): 8.4A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封装: DO-214AB, SMC

P4SMA6.8A-M3/5A

Vishay Semiconductor Diodes Division

TVS DIODE 5.8VWM 10.5VC DO-214AC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 5.8V
• Voltage - Breakdown (Min): 6.45V
• Voltage - Clamping (Max) @ Ipp: 10.5V
• Current - Peak Pulse (10/1000µs): 38.1A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

封装: DO-214AC, SMA

TPC12CAHM3/H

Vishay Semiconductor Diodes Division

TVS DIODE 10.2VWM 16.7VC TO-277A

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 10.2V
• Voltage - Breakdown (Min): 11.4V
• Voltage - Clamping (Max) @ Ipp: 16.7V
• Current - Peak Pulse (10/1000µs): 89.8A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)

封装: TO-277, 3-PowerDFN