Vishay Semiconductor Diodes Division 产品

VS-VSKH162/08PBF

Vishay Semiconductor Diodes Division

MODULE DIODE 160A INT-A-PAK

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 800V
• Current - On State (It (AV)) (Max): 160A
• Current - On State (It (RMS)) (Max): 355A
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 4870A, 5100A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)

封装: INT-A-PAK (3 + 4)

VS-VSKT56/12

Vishay Semiconductor Diodes Division

MODULE THYRISTOR 60A ADD-A-PAK

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1200V
• Current - On State (It (AV)) (Max): 60A
• Current - On State (It (RMS)) (Max): 135A
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1200A, 1256A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3 + 4)

封装: ADD-A-PAK (3 + 4)

TZMC51-GS08

Vishay Semiconductor Diodes Division

DIODE ZENER 51V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 51V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 125 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 39V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80 MiniMELF

封装: DO-213AC, MINI-MELF, SOD-80

TZX20C-TAP

Vishay Semiconductor Diodes Division

DIODE ZENER 20V 500MW DO35

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: -
• Power - Max: 500mW
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 15V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

封装: DO-204AH, DO-35, Axial

AZ23B36-HE3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 36V 300MW SOT23

• Configuration: 1 Pair Common Anode
• Voltage - Zener (Nom) (Vz): 36V
• Tolerance: ±2%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 27V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

封装: TO-236-3, SC-59, SOT-23-3

AZ23C5V1-G3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 5.1V 300MW SOT23

• Configuration: 1 Pair Common Anode
• Voltage - Zener (Nom) (Vz): 5.1V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 800mV
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

封装: TO-236-3, SC-59, SOT-23-3

AZ23C4V7-HE3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 4.7V 300MW SOT23

• Configuration: 1 Pair Common Anode
• Voltage - Zener (Nom) (Vz): 4.7V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 78 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

封装: TO-236-3, SC-59, SOT-23-3

MBR10H35-E3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY TO-220AC

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

封装: -

EGP30D-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A GP20

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: GP20
• Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-201AA, DO-27, Axial

SS10P4-E3/87A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 10A TO277A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 560mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 800µA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-277, 3-PowerDFN

HFA16PB120

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 16A TO247AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 3V @ 16A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 135ns
• Current - Reverse Leakage @ Vr: 20µA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247AC Modified
• Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-247-2

SB15H45-E3/54

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 7A DO204AL

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 7A
• Voltage - Forward (Vf) (Max) @ If: 480mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 300µA @ 45V
• Capacitance @ Vr, F: 1020pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: 200°C (Max)

封装: DO-204AL, DO-41, Axial

VT5200-E3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 5A 200V TO-220AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-220-2

SB540A-E3/54

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 5A DO201AD

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-201AD, Axial

VS-70HF120M

Vishay Semiconductor Diodes Division

DIODE STD REC 1200V 70A DO5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 70A
• Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB (DO-5)
• Operating Temperature - Junction: -65°C ~ 180°C

封装: DO-203AB, DO-5, Stud

CS1D-E3/I

Vishay Semiconductor Diodes Division

DIODE GPP 1A 200V DO-214AC SMA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5µs
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 6pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AC, SMA

VS-VSKC91/08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 50A ADDAPAK

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io) (per Diode): 50A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10mA @ 800V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3)
• Supplier Device Package: ADD-A-PAK?

封装: ADD-A-PAK (3)

VS-16CTQ080STRLPBF

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 80V D2PAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 8A
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 16A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 550µA @ 80V
• Operating Temperature - Junction: 175°C (Max)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

V40100CHM3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40A 100V TO-220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 20A
• Voltage - Forward (Vf) (Max) @ If: 730mV @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 100V
• Operating Temperature - Junction: -40°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封装: TO-220-3

VS-MURB2020CTRHM3

Vishay Semiconductor Diodes Division

DIODE STANDARD 200V 10A D2PAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 850mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 21ns
• Current - Reverse Leakage @ Vr: 15µA @ 200V
• Operating Temperature - Junction: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BYQ28EB-200HE3/81

Vishay Semiconductor Diodes Division

DIODE ARRAY GP 200V 5A TO263AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BU2506-M3/51

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 25A 600V BU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 12.5A
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, BU
• Supplier Device Package: isoCINK+? BU

封装: 4-SIP, BU

P6KE8.2HE3/54

Vishay Semiconductor Diodes Division

TVS DIODE 6.63VWM 12.5VC DO204AC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 6.63V
• Voltage - Breakdown (Min): 7.38V
• Voltage - Clamping (Max) @ Ipp: 12.5V
• Current - Peak Pulse (10/1000µs): 48A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

封装: DO-204AC, DO-15, Axial

SM5S15A-E3/2D

Vishay Semiconductor Diodes Division

TVS DIODE 15VWM 24.4VC DO218AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 15V
• Voltage - Breakdown (Min): 16.7V
• Voltage - Clamping (Max) @ Ipp: 24.4V
• Current - Peak Pulse (10/1000µs): 148A
• Power - Peak Pulse: 3600W (3.6kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-218AB
• Supplier Device Package: DO-218AB

封装: DO-218AB

1.5KE36CAHE3_A/C

Vishay Semiconductor Diodes Division

TVS DIODE 30.8VWM 49.9VC 1.5KE

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 30.8V
• Voltage - Breakdown (Min): 34.2V
• Voltage - Clamping (Max) @ Ipp: 49.9V
• Current - Peak Pulse (10/1000µs): 30.1A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

封装: DO-201AA, DO-27, Axial

P4KE400A-E3/54

Vishay Semiconductor Diodes Division

TVS DIODE 342VWM 548VC AXIAL

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 342V
• Voltage - Breakdown (Min): 380V
• Voltage - Clamping (Max) @ Ipp: 548V
• Current - Peak Pulse (10/1000µs): 730mA
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

P4KE150A-E3/54

Vishay Semiconductor Diodes Division

TVS DIODE 128VWM 207VC AXIAL

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 128V
• Voltage - Breakdown (Min): 143V
• Voltage - Clamping (Max) @ Ipp: 207V
• Current - Peak Pulse (10/1000µs): 1.9A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

SM15T33A-M3/9AT

Vishay Semiconductor Diodes Division

TVS DIODE 28.2VWM 45.7VC DO-214A

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 28.2V
• Voltage - Breakdown (Min): 31.4V
• Voltage - Clamping (Max) @ Ipp: 45.7V
• Current - Peak Pulse (10/1000µs): 33A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封装: DO-214AB, SMC