Vishay Semiconductor Diodes Division 产品

BZD17C120P-E3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 800MW SMF DO219AB

• Voltage - Zener (Nom) (Vz): 120V
• Tolerance: -
• Power - Max: 800mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 1µA @ 91V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

封装: DO-219AB

SMZJ3801B-M3/52

Vishay Semiconductor Diodes Division

DIODE ZENER 33V 1.5W DO214AA

• Voltage - Zener (Nom) (Vz): 33V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 33 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 25.1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

封装: DO-214AA, SMB

BZD27B10P-E3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 10V 0.8W DO-219AB

• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: -
• Power - Max: 800mW
• Impedance (Max) (Zzt): 4 Ohms
• Current - Reverse Leakage @ Vr: 7µA @ 7.5V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

封装: DO-219AB

MMSZ5252C-E3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 24V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 33 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 18V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

封装: SOD-123

MSS1P2LHM3/89A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 1A 20V MICROSMP

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 250µA @ 20V
• Capacitance @ Vr, F: 65pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: MicroSMP
• Supplier Device Package: MicroSMP
• Operating Temperature - Junction: -55°C ~ 150°C

封装: MicroSMP

VS-87HFR120M

Vishay Semiconductor Diodes Division

DIODE GENERAL PURPOSE 85A DO-5

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 85A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB (DO-5)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-203AB, DO-5, Stud

VS-HFA25TB60STRHM3

Vishay Semiconductor Diodes Division

DIODE HEXFRED 25A 600V D2PAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 25A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 20µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FES16FTHE3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 16A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 16A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 10µA @ 300V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -65°C ~ 150°C

封装: TO-220-2

VS-15TQ060S-M3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 15A D2PAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 620mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 800µA @ 60V
• Capacitance @ Vr, F: 720pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK
• Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AS4PMHM3_A/H

Vishay Semiconductor Diodes Division

DIODE AVALANCH 1KV 2.4A TO277A

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 2.4A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.8µs
• Current - Reverse Leakage @ Vr: 10µA @ 1000V
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-277, 3-PowerDFN

BYW74TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 3A SOD64

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 200ns
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: SOD-64, Axial
• Supplier Device Package: SOD-64
• Operating Temperature - Junction: -55°C ~ 175°C

封装: SOD-64, Axial

RGF1AHE3/67A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO214BA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214BA
• Supplier Device Package: DO-214BA (GF1)
• Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-214BA

RGF1A-E3/67A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO214BA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214BA
• Supplier Device Package: DO-214BA (GF1)
• Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-214BA

SD101BW-HE3-18

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 400MW 50V SOD123

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 30mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 15mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 1ns
• Current - Reverse Leakage @ Vr: 200nA @ 40V
• Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: -55°C ~ 125°C

封装: SOD-123

VS-4ESH02-M3/86A

Vishay Semiconductor Diodes Division

DIODE 200V 4A TO277A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 930mV @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 20ns
• Current - Reverse Leakage @ Vr: 2µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -65°C ~ 175°C

封装: TO-277, 3-PowerDFN

VT4045CHM3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 20A TO-220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 20A
• Voltage - Forward (Vf) (Max) @ If: 580mV @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 45V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封装: TO-220-3

VIT3045C-M3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30A 45V TO-262AA

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 570mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 45V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

VS-15CTQ035-1-M3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 7.5A TO262

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io) (per Diode): 7.5A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 7.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 800µA @ 35V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262-3

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

VIT2080C-E3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20A 80V TO-262AA

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 810mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 600µA @ 80V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

VS-MURB1620CTPBF

Vishay Semiconductor Diodes Division

DIODE ARRAY GP 200V 8A D2PAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 8A
• Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Operating Temperature - Junction: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

2KBP04M/1

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 2A 400V KBPM

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 400V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Operating Temperature: -55°C ~ 165°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBPM
• Supplier Device Package: KBPM

封装: 4-SIP, KBPM

DF10MA-E3/45

Vishay Semiconductor Diodes Division

DIODE GPP 1A 1000V 4DIP

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-EDIP (0.300", 7.62mm)
• Supplier Device Package: DFM

封装: 4-EDIP (0.300", 7.62mm)

1.5KE6.8C-E3/54

Vishay Semiconductor Diodes Division

TVS DIODE 5.5VWM 10.8VC 1.5KE

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 5.5V
• Voltage - Breakdown (Min): 6.12V
• Voltage - Clamping (Max) @ Ipp: 10.8V
• Current - Peak Pulse (10/1000µs): 139A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

封装: DO-201AA, DO-27, Axial

TPSMA22AHE3/5AT

Vishay Semiconductor Diodes Division

TVS DIODE 18.8VWM 30.6VC SMA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 18.8V
• Voltage - Breakdown (Min): 20.9V
• Voltage - Clamping (Max) @ Ipp: 30.6V
• Current - Peak Pulse (10/1000µs): 13.1A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

封装: DO-214AC, SMA

GSOT24-HT3-GS08

Vishay Semiconductor Diodes Division

TVS DIODE 24VWM 47VC LLP753B

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 24V (Min)
• Voltage - Breakdown (Min): 27V
• Voltage - Clamping (Max) @ Ipp: 47V
• Current - Peak Pulse (10/1000µs): 5A (8/20µs)
• Power - Peak Pulse: 235W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: 65pF @ 1MHz
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 3-WDFN
• Supplier Device Package: LLP75-3B

封装: 3-WDFN

SMCJ7.0CAHE3/9AT

Vishay Semiconductor Diodes Division

TVS DIODE 7VWM 12VC SMC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 7V
• Voltage - Breakdown (Min): 7.78V
• Voltage - Clamping (Max) @ Ipp: 12V
• Current - Peak Pulse (10/1000µs): 125A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封装: DO-214AB, SMC

GSOT08-G3-18

Vishay Semiconductor Diodes Division

TVS DIODE 8VWM 19.2VC SOT23

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 8V (Max)
• Voltage - Breakdown (Min): 9V
• Voltage - Clamping (Max) @ Ipp: 19.2V
• Current - Peak Pulse (10/1000µs): 18A (8/20µs)
• Power - Peak Pulse: 345W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 160pF @ 1MHz
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

封装: TO-236-3, SC-59, SOT-23-3

SMF40A-E3-08

Vishay Semiconductor Diodes Division

TVS DIODE 40VWM 64.5VC SMF

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 40V
• Voltage - Breakdown (Min): 44.4V
• Voltage - Clamping (Max) @ Ipp: 64.5V
• Current - Peak Pulse (10/1000µs): 3.1A
• Power - Peak Pulse: 200W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 172pF @ 1MHz
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: SMF

封装: DO-219AB