Vishay Semiconductor Diodes Division 产品

SMZG3797B-E3/52

Vishay Semiconductor Diodes Division

DIODE ZENER 22V 1.5W DO215AA

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 17.5 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 16.7V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: DO-215AA (SMBG)

封装: DO-215AA, SMB Gull Wing

BZD27C6V2P-M-18

Vishay Semiconductor Diodes Division

DIODE ZENER 800MW SMF DO219-M

• Voltage - Zener (Nom) (Vz): 6.2V
• Tolerance: -
• Power - Max: 800mW
• Impedance (Max) (Zzt): 3 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

封装: DO-219AB

PLZ12B-HG3/H

Vishay Semiconductor Diodes Division

DIODE ZENER 12V 500MW DO219AC

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±3%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 12 Ohms
• Current - Reverse Leakage @ Vr: 200nA @ 9V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AC
• Supplier Device Package: DO-219AC (microSMF)

封装: DO-219AC

MMSZ5248B-G3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 18V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 21 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 14V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

封装: SOD-123

1N4762A-TAP

Vishay Semiconductor Diodes Division

DIODE ZENER 82V 1.3W DO41

• Voltage - Zener (Nom) (Vz): 82V
• Tolerance: ±5%
• Power - Max: 1.3W
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 62.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41

封装: DO-204AL, DO-41, Axial

MMSZ5252B-HE3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 24V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 33 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 18V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

封装: SOD-123

BZT52C3V0-HE3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 3V 410MW SOD123

• Voltage - Zener (Nom) (Vz): 3V
• Tolerance: ±5%
• Power - Max: 410mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

封装: SOD-123

BZX84C4V3-HE3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 4.3V 300MW SOT23-3

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

VS-1N5820TR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 3A DO201AD

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 475mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 20V
• Capacitance @ Vr, F: 350pF @ 5V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-201AD, Axial

SD4000C40R

Vishay Semiconductor Diodes Division

DIODE MODULE 4KV 4450A B-44

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 4000V
• Current - Average Rectified (Io): 4450A
• Voltage - Forward (Vf) (Max) @ If: 1.44V @ 6000A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100mA @ 4000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: B-44, R-PUK
• Supplier Device Package: B-44 (R-PUK)
• Operating Temperature - Junction: -

封装: B-44, R-PUK

VS-8TQ080STRRHM3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 80V 8A TO263AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 550µA @ 80V
• Capacitance @ Vr, F: 500pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2Pak)
• Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

VBT1080S-M3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 10A 80V TO-263AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 810mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 600µA @ 80V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB
• Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

GI750-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 6A P600

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2.5µs
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Capacitance @ Vr, F: 150pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600
• Operating Temperature - Junction: -50°C ~ 150°C

封装: P600, Axial

EGF1T-E3/5CA

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.3KV 1A DO214BA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1300V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 5µA @ 1300V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214BA
• Supplier Device Package: DO-214BA (GF1)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214BA

SE20AFJ-M3/6B

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1.3A DO221AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1.3A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.2µs
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: 12pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: DO-221AC (SlimSMA)
• Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-221AC, SMA Flat Leads

BYM10-600-E3/97

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO213AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: 8pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF (Glass)
• Supplier Device Package: DO-213AB
• Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-213AB, MELF (Glass)

BAV21WS-G3-18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 250MA SOD323

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 250mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323
• Operating Temperature - Junction: 150°C (Max)

封装: SC-76, SOD-323

V20PWM10-M3/I

Vishay Semiconductor Diodes Division

RECT SCHKY 20A 100V SLIMDPAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 100V
• Capacitance @ Vr, F: 1575pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: SlimDPAK
• Operating Temperature - Junction: -40°C ~ 175°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

SBLB1640CTHE3/81

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 40V TO263AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io) (per Diode): 8A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Operating Temperature - Junction: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

VSKJ320-04

Vishay Semiconductor Diodes Division

DIODE MODULE 400V 320A MAGNAPAK

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io) (per Diode): 320A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 400V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK?
• Supplier Device Package: MAGN-A-PAK?

封装: 3-MAGN-A-PAK?

40CPQ100

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 100V TO247

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 20A
• Voltage - Forward (Vf) (Max) @ If: 770mV @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1.25mA @ 100V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

封装: TO-247-3

1.5KE110AHE3/51

Vishay Semiconductor Diodes Division

TVS DIODE 1500W 1.5KE

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 94V
• Voltage - Breakdown (Min): 105V
• Voltage - Clamping (Max) @ Ipp: 152V
• Current - Peak Pulse (10/1000µs): 9.9A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

封装: DO-201AA, DO-27, Axial

P6KE33-E3/54

Vishay Semiconductor Diodes Division

TVS DIODE 26.8VWM 47.7VC DO204AC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 26.8V
• Voltage - Breakdown (Min): 29.7V
• Voltage - Clamping (Max) @ Ipp: 47.7V
• Current - Peak Pulse (10/1000µs): 12.6A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

封装: DO-204AC, DO-15, Axial

BZW04P13BHE3/54

Vishay Semiconductor Diodes Division

TVS DIODE 12.8VWM DO204AL

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 12.8V
• Voltage - Breakdown (Min): 14.3V
• Voltage - Clamping (Max) @ Ipp: 21.2V
• Current - Peak Pulse (10/1000µs): 19A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

1.5KE160C-E3/54

Vishay Semiconductor Diodes Division

TVS DIODE 130VWM 230VC 1.5KE

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 130V
• Voltage - Breakdown (Min): 144V
• Voltage - Clamping (Max) @ Ipp: 230V
• Current - Peak Pulse (10/1000µs): 6.5A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

封装: DO-201AA, DO-27, Axial

SMBJ70HE3/52

Vishay Semiconductor Diodes Division

TVS DIODE 70VWM 125VC SMB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 70V
• Voltage - Breakdown (Min): 77.8V
• Voltage - Clamping (Max) @ Ipp: 125V
• Current - Peak Pulse (10/1000µs): 4.8A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

封装: DO-214AA, SMB

SMCG64AHE3/9AT

Vishay Semiconductor Diodes Division

TVS DIODE 64VWM 103VC SMC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 64V
• Voltage - Breakdown (Min): 71.1V
• Voltage - Clamping (Max) @ Ipp: 103V
• Current - Peak Pulse (10/1000µs): 14.6A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: DO-215AB (SMCG)

封装: DO-215AB, SMC Gull Wing

SMCG10A-M3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 10VWM 17VC DO-215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 10V
• Voltage - Breakdown (Min): 11.1V
• Voltage - Clamping (Max) @ Ipp: 17V
• Current - Peak Pulse (10/1000µs): 88.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: DO-215AB (SMCG)

封装: DO-215AB, SMC Gull Wing