Vishay Semiconductor Diodes Division 产品

1N4731A-TR

Vishay Semiconductor Diodes Division

DIODE ZENER 4.3V 1.3W DO41

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±5%
• Power - Max: 1.3W
• Impedance (Max) (Zzt): 9 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41

封装: DO-204AL, DO-41, Axial

BZX84B11-E3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 11V 300MW SOT23-3

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: ±2%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 8V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

AZ23B12-HE3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 12V 300MW SOT23

• Configuration: 1 Pair Common Anode
• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±2%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 9V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

封装: TO-236-3, SC-59, SOT-23-3

BY127MGP-E3/54

Vishay Semiconductor Diodes Division

DIODE GP 1.25KV 1.75A DO204

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1250V
• Current - Average Rectified (Io): 1.75A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 5µA @ 1250V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AC, DO-15, Axial

SS8PH10-E3/87A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 8A TO277A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-277, 3-PowerDFN

MBRB1045TRL

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 10A D2PAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 840mV @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK
• Operating Temperature - Junction: -65°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

VS-8EWS12STR-M3

Vishay Semiconductor Diodes Division

DIODE RECTIFIER 1200V 8A DPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-PAK (TO-252AA)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

VIT3060G-E3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 15A TO262AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 730mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 850µA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262AA
• Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

VBT2045BP-E3/8W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 20A TO263AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 20A (DC)
• Voltage - Forward (Vf) (Max) @ If: 660mV @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB
• Operating Temperature - Junction: 200°C (Max)

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BYM10-400-E3/97

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO213AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: 8pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF (Glass)
• Supplier Device Package: DO-213AB
• Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-213AB, MELF (Glass)

S2B-M3/5BT

Vishay Semiconductor Diodes Division

DIODE GPP 1.5A 100V DO-214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 1µA @ 100V
• Capacitance @ Vr, F: 16pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AA, SMB

VS-85HF100

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 85A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 85A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 9mA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -65°C ~ 180°C

封装: DO-203AB, DO-5, Stud

VS-8EWF04S-M3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 8A TO252AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 55ns
• Current - Reverse Leakage @ Vr: 100µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-PAK (TO-252AA)
• Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

VS-5EWH06FNTR-M3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 5A DPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.85V @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-PAK (TO-252AA)
• Operating Temperature - Junction: -65°C ~ 175°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

VS-VSKD236/04PBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 115A INTAPAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io) (per Diode): 115A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 400V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: MAGN-A-PAK (2)
• Supplier Device Package: MAGN-A-PAK?

封装: MAGN-A-PAK (2)

KBU4B-E4/51

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 4A 100V KBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 100V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Operating Temperature: -50°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBU
• Supplier Device Package: KBU

封装: 4-SIP, KBU

1.5KE7.5-E3/54

Vishay Semiconductor Diodes Division

TVS DIODE 6.05VWM 11.7VC 1.5KE

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 6.05V
• Voltage - Breakdown (Min): 6.75V
• Voltage - Clamping (Max) @ Ipp: 11.7V
• Current - Peak Pulse (10/1000µs): 128A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

封装: DO-201AA, DO-27, Axial

1.5KE400-E3/54

Vishay Semiconductor Diodes Division

TVS DIODE 324VWM 574VC 1.5KE

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 324V
• Voltage - Breakdown (Min): 360V
• Voltage - Clamping (Max) @ Ipp: 574V
• Current - Peak Pulse (10/1000µs): 2.6A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

封装: DO-201AA, DO-27, Axial

TGL41-24-E3/96

Vishay Semiconductor Diodes Division

TVS DIODE 19.4VWM 34.7VC MELF

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 19.4V
• Voltage - Breakdown (Min): 21.6V
• Voltage - Clamping (Max) @ Ipp: 34.7V
• Current - Peak Pulse (10/1000µs): 11.5A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

封装: DO-213AB, MELF

SMBG10-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 10VWM 18.8VC SMB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 10V
• Voltage - Breakdown (Min): 11.1V
• Voltage - Clamping (Max) @ Ipp: 18.8V
• Current - Peak Pulse (10/1000µs): 31.9A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: DO-215AA (SMBG)

封装: DO-215AA, SMB Gull Wing

3KASMC43AHE3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 43VWM 69.4VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 43V
• Voltage - Breakdown (Min): 47.8V
• Voltage - Clamping (Max) @ Ipp: 69.4V
• Current - Peak Pulse (10/1000µs): 43.2A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封装: DO-214AB, SMC

SMP12A-E3/85A

Vishay Semiconductor Diodes Division

TVS DIODE 12VWM 19.9VC SMP

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 12V
• Voltage - Breakdown (Min): 13.3V
• Voltage - Clamping (Max) @ Ipp: 19.9V
• Current - Peak Pulse (10/1000µs): 20.1A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)

封装: DO-220AA

3KASMC20HE3/9AT

Vishay Semiconductor Diodes Division

TVS DIODE 20VWM 35.8VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 20V
• Voltage - Breakdown (Min): 22.2V
• Voltage - Clamping (Max) @ Ipp: 35.8V
• Current - Peak Pulse (10/1000µs): 83.8A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封装: DO-214AB, SMC

SMBJ30-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 30VWM 53.5VC SMB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 30V
• Voltage - Breakdown (Min): 33.3V
• Voltage - Clamping (Max) @ Ipp: 53.5V
• Current - Peak Pulse (10/1000µs): 11.2A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

封装: DO-214AA, SMB

1N6386HE3_A/C

Vishay Semiconductor Diodes Division

TVS DIODE 18VWM 25.5VC 1.5KE

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 18V
• Voltage - Breakdown (Min): 21.2V
• Voltage - Clamping (Max) @ Ipp: 25.5V
• Current - Peak Pulse (10/1000µs): 50A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

封装: DO-201AA, DO-27, Axial

TPSMB15AHE3_A/I

Vishay Semiconductor Diodes Division

TVS DIODE 21.2VC 28.3A DO214AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 12.8V
• Voltage - Breakdown (Min): 14.3V
• Voltage - Clamping (Max) @ Ipp: 21.2V
• Current - Peak Pulse (10/1000µs): 28.3A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

封装: DO-214AA, SMB

SMCJ75A-E3/9AT

Vishay Semiconductor Diodes Division

TVS DIODE 75VWM 121VC SMC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 75V
• Voltage - Breakdown (Min): 83.3V
• Voltage - Clamping (Max) @ Ipp: 121V
• Current - Peak Pulse (10/1000µs): 12.4A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封装: DO-214AB, SMC

P4SMA43CA-M3/5A

Vishay Semiconductor Diodes Division

TVS DIODE 36.8VWM 59.3VC DO-214A

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 36.8V
• Voltage - Breakdown (Min): 40.9V
• Voltage - Clamping (Max) @ Ipp: 59.3V
• Current - Peak Pulse (10/1000µs): 6.7A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

封装: DO-214AC, SMA