Vishay Semiconductor Diodes Division 产品

SMZJ3803AHE3/52

Vishay Semiconductor Diodes Division

DIODE ZENER 39V 1.5W DO214AA

• Voltage - Zener (Nom) (Vz): 39V
• Tolerance: ±10%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 45 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 29.7V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

封装: DO-214AA, SMB

SML4749A-E3/5A

Vishay Semiconductor Diodes Division

DIODE ZENER 24V 1W DO214AC

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 25 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 18.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

封装: DO-214AC, SMA

BZX384B43-G3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 43V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 43V
• Tolerance: ±2%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 150 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 30.1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

封装: SC-76, SOD-323

BZX384C12-E3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 12V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 25 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 8V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

封装: SC-76, SOD-323

BZX84C18-HE3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 18V 300MW SOT23-3

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 45 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 12.6V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

BZM55C22-TR3

Vishay Semiconductor Diodes Division

DIODE ZENER 500MW MICROMELF

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: -
• Power - Max: 500mW
• Impedance (Max) (Zzt): 220 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 16V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, No Lead
• Supplier Device Package: MicroMELF

封装: 2-SMD, No Lead

TZM5228B-GS08

Vishay Semiconductor Diodes Division

DIODE ZENER 3.9V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 3.9V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 23 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80 MiniMELF

封装: DO-213AC, MINI-MELF, SOD-80

DZ23C10-HE3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 10V 300MW SOT23

• Configuration: 1 Pair Common Cathode
• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 7.5V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

封装: TO-236-3, SC-59, SOT-23-3

VS-VSKE71/10

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 80A ADDAPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 80A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10mA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3)
• Supplier Device Package: ADD-A-PAK?
• Operating Temperature - Junction: -40°C ~ 150°C

封装: ADD-A-PAK (3)

VS-6FR20M

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 6A DO203AA

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 19A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-203AA (DO-4)
• Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-203AA, DO-4, Stud

U3D-E3/57T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 20ns
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AB, SMC

BYG20JHE3_A/I

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1.5A SMA

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 1µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AC, SMA

ES2G-E3/5BT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 2A DO214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AA, SMB

GP10D-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 8pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AL, DO-41, Axial

1N4004E-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-204AL, DO-41, Axial

VS-40CPQ080GPBF

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 80V TO247AC

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 40A
• Voltage - Forward (Vf) (Max) @ If: 910mV @ 40A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 270µA @ 80V
• Operating Temperature - Junction: 175°C (Max)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

封装: TO-247-3

MBR3035PT-E3/45

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 35V TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 760mV @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 35V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封装: TO-220-3

UGF8JCT-E3/45

Vishay Semiconductor Diodes Division

DIODE ARRAY GP 600V 4A ITO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.75V @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 30µA @ 600V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

封装: TO-220-3 Full Pack, Isolated Tab

VS-10CSH01-M3/86A

Vishay Semiconductor Diodes Division

DIODE ARRAY GP 100V 5A TO277A

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 5A
• Voltage - Forward (Vf) (Max) @ If: 980V @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 2µA @ 100V
• Operating Temperature - Junction: 175°C (Max)
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)

封装: TO-277, 3-PowerDFN

BU1010A-E3/45

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 1000V 10A BU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, BU
• Supplier Device Package: isoCINK+? BU

封装: 4-SIP, BU

5KP45-E3/54

Vishay Semiconductor Diodes Division

TVS DIODE 45VWM 80.3VC P600

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 45V
• Voltage - Breakdown (Min): 50V
• Voltage - Clamping (Max) @ Ipp: 80.3V
• Current - Peak Pulse (10/1000µs): 62.3A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600

封装: P600, Axial

1.5KE75HE3/73

Vishay Semiconductor Diodes Division

TVS DIODE 60.7VWM 109VC 1.5KE

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 60.7V
• Voltage - Breakdown (Min): 67.5V
• Voltage - Clamping (Max) @ Ipp: 109V
• Current - Peak Pulse (10/1000µs): 13.9A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

封装: DO-201AA, DO-27, Axial

TPC9.1HM3/86A

Vishay Semiconductor Diodes Division

TVS DIODE 7.37VWM 13.8VC SMPC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 7.37V
• Voltage - Breakdown (Min): 8.19V
• Voltage - Clamping (Max) @ Ipp: 13.8V
• Current - Peak Pulse (10/1000µs): 109A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)

封装: TO-277, 3-PowerDFN

5KP188A-E3/54

Vishay Semiconductor Diodes Division

TVS DIODE 188VWM 328VC P600

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 188V
• Voltage - Breakdown (Min): 209V
• Voltage - Clamping (Max) @ Ipp: 328V
• Current - Peak Pulse (10/1000µs): 15.2A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600

封装: P600, Axial

1N6383-E3/51

Vishay Semiconductor Diodes Division

TVS DIODE 10VWM 14.5VC 1.5KE

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 10V
• Voltage - Breakdown (Min): 11.7V
• Voltage - Clamping (Max) @ Ipp: 14.5V
• Current - Peak Pulse (10/1000µs): 90A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

封装: DO-201AA, DO-27, Axial

SM6S17ATHE3/I

Vishay Semiconductor Diodes Division

TVS DIODE 17VWM 27.6VC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 17V
• Voltage - Breakdown (Min): 18.9V
• Voltage - Clamping (Max) @ Ipp: 27.6V
• Current - Peak Pulse (10/1000µs): 167A
• Power - Peak Pulse: 4600W (4.6kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-218AC
• Supplier Device Package: DO-218AC

封装: DO-218AC

SMC3K48CA-M3/9A

Vishay Semiconductor Diodes Division

TVS DIODE 48VWM 77.4VC DO-214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 48V
• Voltage - Breakdown (Min): 53.3V
• Voltage - Clamping (Max) @ Ipp: 77.4V
• Current - Peak Pulse (10/1000µs): 38.8A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封装: DO-214AB, SMC

P4SMA8.2CA-E3/5A

Vishay Semiconductor Diodes Division

TVS DIODE 7.02VWM 12.1VC SMA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 7.02V
• Voltage - Breakdown (Min): 7.79V
• Voltage - Clamping (Max) @ Ipp: 12.1V
• Current - Peak Pulse (10/1000µs): 33.1A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

封装: DO-214AC, SMA