Vishay Semiconductor Diodes Division 产品

ZMM5250B-7

Vishay Semiconductor Diodes Division

DIODE ZENER SOD80 MINIMELF

• Voltage - Zener (Nom) (Vz): -
• Tolerance: -
• Power - Max: -
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: DO-213AA

封装: DO-213AA

SMBZ5941B-E3/5B

Vishay Semiconductor Diodes Division

DIODE ZENER 47V 3W DO214AA

• Voltage - Zener (Nom) (Vz): 47V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 67 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 35.8V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

封装: DO-214AA, SMB

TZMB18-GS08

Vishay Semiconductor Diodes Division

DIODE ZENER 18V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 50 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 13V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80 MiniMELF

封装: DO-213AC, MINI-MELF, SOD-80

V12P12-5001M3/86A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 12A TO277A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 120V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 120V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-277, 3-PowerDFN

SS15HE3/61T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 1A DO214AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-214AC, SMA

20ETF02FP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 20A TO220FP

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 160ns
• Current - Reverse Leakage @ Vr: 100µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: TO-220AC Full Pack
• Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-220-2 Full Pack

VS-85HFLR60S05

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 85A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 85A
• Voltage - Forward (Vf) (Max) @ If: 1.75V @ 266.9A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500ns
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -40°C ~ 125°C

封装: DO-203AB, DO-5, Stud

UGF12JT-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 12A ITO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 1.75V @ 12A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 30µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-2 Full Pack, Isolated Tab

BYWB29-200HE3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 8A TO263AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB
• Operating Temperature - Junction: -65°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

VS-50WQ04FNTRR-M3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 5.5A DPAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 5.5A
• Voltage - Forward (Vf) (Max) @ If: 510mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 40V
• Capacitance @ Vr, F: 405pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-PAK (TO-252AA)
• Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

SS34-E3/9AT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 125°C

封装: DO-214AB, SMC

1N4246GP-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1µA @ 400V
• Capacitance @ Vr, F: 8pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 160°C

封装: DO-204AL, DO-41, Axial

VBT3045BP-E3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 30A TO263AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 30A (DC)
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB
• Operating Temperature - Junction: 200°C (Max)

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

V40100K-E3/4W

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 100V TO220

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 20A
• Voltage - Forward (Vf) (Max) @ If: 820mV @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 100V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封装: TO-220-3

G5SBA20-M3/51

Vishay Semiconductor Diodes Division

DIODE 1PH 6A 200V

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200V
• Current - Average Rectified (Io): 2.8A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBU
• Supplier Device Package: GBU

封装: 4-SIP, GBU

3KBP08M-E4/51

Vishay Semiconductor Diodes Division

DIODE BRIDGE 3A 800V KBPM

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBPM
• Supplier Device Package: KBPM

封装: 4-SIP, KBPM

1N6288AHE3/51

Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE 1.5KE

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 43.6V
• Voltage - Breakdown (Min): 48.5V
• Voltage - Clamping (Max) @ Ipp: 70.1V
• Current - Peak Pulse (10/1000µs): 21.4A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

封装: DO-201AA, DO-27, Axial

3KASMC43AHM3_A/I

Vishay Semiconductor Diodes Division

TVS DIODE 43VWM 69.4VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 43V
• Voltage - Breakdown (Min): 47.8V
• Voltage - Clamping (Max) @ Ipp: 69.4V
• Current - Peak Pulse (10/1000µs): 43.2A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封装: DO-214AB, SMC

TPSMA27AHE3/61T

Vishay Semiconductor Diodes Division

TVS DIODE 23.1VWM 37.5VC SMA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 23.1V
• Voltage - Breakdown (Min): 25.7V
• Voltage - Clamping (Max) @ Ipp: 37.5V
• Current - Peak Pulse (10/1000µs): 10.7A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

封装: DO-214AC, SMA

TPSMP18A-E3/84A

Vishay Semiconductor Diodes Division

TVS DIODE 15.3VWM DO220AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 15.3V
• Voltage - Breakdown (Min): 17.1V
• Voltage - Clamping (Max) @ Ipp: 25.5V
• Current - Peak Pulse (10/1000µs): 15.9A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)

封装: DO-220AA

1N6268A-E3/51

Vishay Semiconductor Diodes Division

TVS DIODE 6.4VWM 11.3VC 1.5KE

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 6.4V
• Voltage - Breakdown (Min): 7.13V
• Voltage - Clamping (Max) @ Ipp: 11.3V
• Current - Peak Pulse (10/1000µs): 133A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

封装: DO-201AA, DO-27, Axial

BZG04-36TR3

Vishay Semiconductor Diodes Division

TVS DIODE 36VWM 60.7VC DO214AC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 36V
• Voltage - Breakdown (Min): 40V
• Voltage - Clamping (Max) @ Ipp: 60.7V
• Current - Peak Pulse (10/1000µs): 4.9A
• Power - Peak Pulse: 300W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: 390pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC

封装: DO-214AC, SMA

SMBG36AHE3/52

Vishay Semiconductor Diodes Division

TVS DIODE 36VWM 58.1VC SMB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 36V
• Voltage - Breakdown (Min): 40V
• Voltage - Clamping (Max) @ Ipp: 58.1V
• Current - Peak Pulse (10/1000µs): 10.3A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: DO-215AA (SMBG)

封装: DO-215AA, SMB Gull Wing

SMBG75CA-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 75VWM 121VC SMB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 75V
• Voltage - Breakdown (Min): 83.3V
• Voltage - Clamping (Max) @ Ipp: 121V
• Current - Peak Pulse (10/1000µs): 5A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: DO-215AA (SMBG)

封装: DO-215AA, SMB Gull Wing

SMB8J7.0CAHE3/5B

Vishay Semiconductor Diodes Division

TVS DIODE 7VWM 12VC SMB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 7V
• Voltage - Breakdown (Min): 7.78V
• Voltage - Clamping (Max) @ Ipp: 12V
• Current - Peak Pulse (10/1000µs): 66.7A
• Power - Peak Pulse: 800W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

封装: DO-214AA, SMB

SM15T220A-E3/9AT

Vishay Semiconductor Diodes Division

TVS DIODE 188VWM 328VC SMC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 188V
• Voltage - Breakdown (Min): 209V
• Voltage - Clamping (Max) @ Ipp: 328V
• Current - Peak Pulse (10/1000µs): 4.6A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封装: DO-214AB, SMC

SMBG10A/54

Vishay Semiconductor Diodes Division

TVS DIODE 10VWM 17VC DO215AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 10V
• Voltage - Breakdown (Min): 11.1V
• Voltage - Clamping (Max) @ Ipp: 17V
• Current - Peak Pulse (10/1000µs): 35.3A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: DO-215AA (SMBG)

封装: DO-215AA, SMB Gull Wing

SM15T6V8A-E3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 5.8VWM 10.5VC SMC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 5.8V
• Voltage - Breakdown (Min): 6.45V
• Voltage - Clamping (Max) @ Ipp: 10.5V
• Current - Peak Pulse (10/1000µs): 143A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封装: DO-214AB, SMC