页 48 - Vishay Siliconix 产品

零件编号	制造商	描述	封装	库存
SI7440DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 12A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	封装: PowerPAK? SO-8	库存6,464
SI7388DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 12A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 7 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	封装: PowerPAK? SO-8	库存30,120
SI3459DV-T1-E3	Vishay Siliconix	MOSFET P-CH 60V 2.2A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 220 mOhm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	封装: SOT-23-6 Thin, TSOT-23-6	库存1,309,392
IRFP32N50K	Vishay Siliconix	MOSFET N-CH 500V 32A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5280pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	封装: TO-247-3	库存41,232
IRFR11N25D	Vishay Siliconix	MOSFET N-CH 250V DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存3,280
IRFBF20STRL	Vishay Siliconix	MOSFET N-CH 900V 1.7A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存12,588
IRFB9N65A	Vishay Siliconix	MOSFET N-CH 650V 8.5A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1417pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 930 mOhm @ 5.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封装: TO-220-3	库存7,952
SIHW33N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 33A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3508pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 16.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-3P-3 Full Pack	封装: TO-3P-3 Full Pack	库存5,536
IRF9520STRLPBF	Vishay Siliconix	MOSFET P-CH 100V 6.8A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.1A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存5,344
IRF610STRLPBF	Vishay Siliconix	MOSFET N-CH 200V 3.3A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存4,960
SISS27DN-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 50A PPAK 1212-8S FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 15A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8S (3.3x3.3) Package / Case: 8-PowerVDFN	封装: 8-PowerVDFN	库存7,072
SIR472ADP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 18A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 14.7W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	封装: PowerPAK? SO-8	库存8,244
IRFPG50PBF	Vishay Siliconix	MOSFET N-CH 1000V 6.1A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	封装: TO-247-3	库存125,184
SI5504DC-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 30V 2.9A 1206-8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	封装: 8-SMD, Flat Lead	库存6,992
SI7960DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 60V 6.2A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.2A Rds On (Max) @ Id, Vgs: 21 mOhm @ 9.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存37,032
SI7945DP-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 30V 7A PPAK SO-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 20 mOhm @ 10.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存5,216
SI7905DN-T1-E3	Vishay Siliconix	MOSFET 2P-CH 40V 6A 1212-8 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 60 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 20V Power - Max: 20.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	封装: PowerPAK? 1212-8 Dual	库存6,032
SI4943CDY-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 8A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 8.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V Power - Max: 3.1W Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存188,376
SI7236DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 60A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 60A Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20.7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V Power - Max: 46W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存17,844
SIP21107DVP-30-E3	Vishay Siliconix	IC REG LINEAR 3V 150MA TSC75-6 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 6V Voltage - Output (Min/Fixed): 3V Voltage - Output (Max): - Voltage Dropout (Max): 0.22V @ 150mA Current - Output: 150mA Current - Quiescent (Iq): - Current - Supply (Max): 85µA PSRR: 72dB ~ 38dB (1kHz ~ 100kHz) Control Features: Enable, Power Good Protection Features: Over Temperature, Short Circuit Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: PowerPAK? TSC-75-6 Supplier Device Package: PowerPAK? TSC75-6	封装: PowerPAK? TSC-75-6	库存7,936
SIP21106DVP-475-E3	Vishay Siliconix	IC REG LIN 4.75V 150MA TSC75-6 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 6V Voltage - Output (Min/Fixed): 4.75V Voltage - Output (Max): - Voltage Dropout (Max): 0.22V @ 150mA Current - Output: 150mA Current - Quiescent (Iq): - Current - Supply (Max): 85µA PSRR: 75dB ~ 40dB (1kHz ~ 100kHz) Control Features: Enable Protection Features: Over Temperature, Short Circuit Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: PowerPAK? TSC-75-6 Supplier Device Package: PowerPAK? TSC75-6	封装: PowerPAK? TSC-75-6	库存2,144
DG301BDJ	Vishay Siliconix	IC SWITCH CMOS 14DIP Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Circuits: 1 On-State Resistance (Max): 50 Ohm Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): - Voltage - Supply, Dual (V±): ±15V Switch Time (Ton, Toff) (Max): 150ns, 130ns (Typ) -3db Bandwidth: - Charge Injection: 8pC Channel Capacitance (CS(off), CD(off)): 14pF, 14pF Current - Leakage (IS(off)) (Max): 5nA Crosstalk: -74dB @ 500kHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: 14-PDIP	封装: 14-DIP (0.300", 7.62mm)	库存4,944
DG2539DQ-T1-GE3	Vishay Siliconix	IC SWITCH SPST 4.5 OHM 10MSOP Switch Circuit: SPST - NO/NC Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 2 On-State Resistance (Max): 4.5 Ohm Channel-to-Channel Matching (ΔRon): 200 mOhm Voltage - Supply, Single (V+): 2.6 V ~ 4.3 V Voltage - Supply, Dual (V±): ±2.5V Switch Time (Ton, Toff) (Max): 30ns, 35ns -3db Bandwidth: 366MHz Charge Injection: 2.2pC Channel Capacitance (CS(off), CD(off)): 8pF, 9pF Current - Leakage (IS(off)) (Max): 250pA Crosstalk: -90dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Supplier Device Package: 10-MSOP	封装: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)	库存4,848
DG419DJ	Vishay Siliconix	IC ANALOG SWITCH CMOS 8DIP Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Circuits: 1 On-State Resistance (Max): 35 Ohm Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): 12V Voltage - Supply, Dual (V±): ±15V Switch Time (Ton, Toff) (Max): 175ns, 145ns -3db Bandwidth: - Charge Injection: 60pC Channel Capacitance (CS(off), CD(off)): 8pF, 8pF Current - Leakage (IS(off)) (Max): 250pA Crosstalk: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-Mini DIP	封装: 8-DIP (0.300", 7.62mm)	库存66,648
DG9454EEN-T1-GE4	Vishay Siliconix	IC SWITCH/MUX SPDT 16MINIQFN Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Circuits: 3 On-State Resistance (Max): 103 Ohm Channel-to-Channel Matching (ΔRon): 1.24 Ohm Voltage - Supply, Single (V+): 3 V ~ 16 V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 110ns, 91ns -3db Bandwidth: 356MHz Charge Injection: 5.84pC Channel Capacitance (CS(off), CD(off)): 3.1pF, 4pF Current - Leakage (IS(off)) (Max): 1nA Crosstalk: -73dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-UFQFN Supplier Device Package: 16-miniQFN (1.8x2.6)	封装: 16-UFQFN	库存29,262
SI1499DH-T1-BE3	Vishay Siliconix	MOSFET P-CH 8V 1.6A/1.6A SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8 V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 4 V Vgs (Max): ±5V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	封装: -	库存8,400
SUD50N04-8M8P-4BE3	Vishay Siliconix	MOSFET N-CH 40V 14A/50A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 48.1W (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	Request a Quote
SQ3481EV-T1_BE3	Vishay Siliconix	MOSFET P-CHANNEL 30V 7.5A 6TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	封装: -	Request a Quote

SI7440DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 12A PPAK SO-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 21A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SO-8
Package / Case: PowerPAK? SO-8

封装: PowerPAK? SO-8

库存6,464

SI7388DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 12A PPAK SO-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 7 mOhm @ 19A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SO-8
Package / Case: PowerPAK? SO-8

封装: PowerPAK? SO-8

库存30,120

SI3459DV-T1-E3

Vishay Siliconix

MOSFET P-CH 60V 2.2A 6-TSOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 220 mOhm @ 2.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

库存1,309,392

IRFP32N50K

Vishay Siliconix

MOSFET N-CH 500V 32A TO-247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5280pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 160 mOhm @ 32A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

封装: TO-247-3

库存41,232

IRFR11N25D

Vishay Siliconix

MOSFET N-CH 250V DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存3,280

IRFBF20STRL

Vishay Siliconix

MOSFET N-CH 900V 1.7A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存12,588

IRFB9N65A

Vishay Siliconix

MOSFET N-CH 650V 8.5A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1417pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 930 mOhm @ 5.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存7,952

SIHW33N60E-GE3

Vishay Siliconix

MOSFET N-CH 600V 33A TO-247AD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3508pF @ 100V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 99 mOhm @ 16.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
Package / Case: TO-3P-3 Full Pack

封装: TO-3P-3 Full Pack

库存5,536

IRF9520STRLPBF

Vishay Siliconix

MOSFET P-CH 100V 6.8A D2PAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.1A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存5,344

IRF610STRLPBF

Vishay Siliconix

MOSFET N-CH 200V 3.3A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存4,960

SISS27DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 50A PPAK 1212-8S

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 15A, 10V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? 1212-8S (3.3x3.3)
Package / Case: 8-PowerVDFN

封装: 8-PowerVDFN

库存7,072

SIR472ADP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 18A PPAK SO-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.3W (Ta), 14.7W (Tc)
Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SO-8
Package / Case: PowerPAK? SO-8

封装: PowerPAK? SO-8

库存8,244

IRFPG50PBF

Vishay Siliconix

MOSFET N-CH 1000V 6.1A TO-247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 2 Ohm @ 3.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

封装: TO-247-3

库存125,184

SI5504DC-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 30V 2.9A 1206-8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

封装: 8-SMD, Flat Lead

库存6,992

SI7960DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 60V 6.2A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存37,032

SI7945DP-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 30V 7A PPAK SO-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 10.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存5,216

SI7905DN-T1-E3

Vishay Siliconix

MOSFET 2P-CH 40V 6A 1212-8

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 20V
Power - Max: 20.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

封装: PowerPAK? 1212-8 Dual

库存6,032

SI4943CDY-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 8A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 8.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V
Power - Max: 3.1W
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存188,376

SI7236DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 60A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20.7A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V
Power - Max: 46W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存17,844

SIP21107DVP-30-E3

Vishay Siliconix

IC REG LINEAR 3V 150MA TSC75-6

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 6V
Voltage - Output (Min/Fixed): 3V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.22V @ 150mA
Current - Output: 150mA
Current - Quiescent (Iq): -
Current - Supply (Max): 85µA
PSRR: 72dB ~ 38dB (1kHz ~ 100kHz)
Control Features: Enable, Power Good
Protection Features: Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: PowerPAK? TSC-75-6
Supplier Device Package: PowerPAK? TSC75-6

封装: PowerPAK? TSC-75-6

库存7,936

SIP21106DVP-475-E3

Vishay Siliconix

IC REG LIN 4.75V 150MA TSC75-6

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 6V
Voltage - Output (Min/Fixed): 4.75V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.22V @ 150mA
Current - Output: 150mA
Current - Quiescent (Iq): -
Current - Supply (Max): 85µA
PSRR: 75dB ~ 40dB (1kHz ~ 100kHz)
Control Features: Enable
Protection Features: Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: PowerPAK? TSC-75-6
Supplier Device Package: PowerPAK? TSC75-6

封装: PowerPAK? TSC-75-6

库存2,144

DG301BDJ

Vishay Siliconix

IC SWITCH CMOS 14DIP

Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 1
On-State Resistance (Max): 50 Ohm
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): -
Voltage - Supply, Dual (V±): ±15V
Switch Time (Ton, Toff) (Max): 150ns, 130ns (Typ)
-3db Bandwidth: -
Charge Injection: 8pC
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Current - Leakage (IS(off)) (Max): 5nA
Crosstalk: -74dB @ 500kHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: 14-PDIP

封装: 14-DIP (0.300", 7.62mm)

库存4,944

DG2539DQ-T1-GE3

Vishay Siliconix

IC SWITCH SPST 4.5 OHM 10MSOP

Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 4.5 Ohm
Channel-to-Channel Matching (ΔRon): 200 mOhm
Voltage - Supply, Single (V+): 2.6 V ~ 4.3 V
Voltage - Supply, Dual (V±): ±2.5V
Switch Time (Ton, Toff) (Max): 30ns, 35ns
-3db Bandwidth: 366MHz
Charge Injection: 2.2pC
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Crosstalk: -90dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 10-MSOP

封装: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)

库存4,848

DG419DJ

Vishay Siliconix

IC ANALOG SWITCH CMOS 8DIP

Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 1
On-State Resistance (Max): 35 Ohm
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Switch Time (Ton, Toff) (Max): 175ns, 145ns
-3db Bandwidth: -
Charge Injection: 60pC
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Current - Leakage (IS(off)) (Max): 250pA
Crosstalk: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-Mini DIP

封装: 8-DIP (0.300", 7.62mm)

库存66,648

DG9454EEN-T1-GE4

Vishay Siliconix

IC SWITCH/MUX SPDT 16MINIQFN

Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 3
On-State Resistance (Max): 103 Ohm
Channel-to-Channel Matching (ΔRon): 1.24 Ohm
Voltage - Supply, Single (V+): 3 V ~ 16 V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 110ns, 91ns
-3db Bandwidth: 356MHz
Charge Injection: 5.84pC
Channel Capacitance (CS(off), CD(off)): 3.1pF, 4pF
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -73dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-UFQFN
Supplier Device Package: 16-miniQFN (1.8x2.6)

封装: 16-UFQFN

库存29,262

SI1499DH-T1-BE3

Vishay Siliconix

MOSFET P-CH 8V 1.6A/1.6A SC70-6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 8 V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 4 V
Vgs (Max): ±5V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363

封装: -

库存8,400

SUD50N04-8M8P-4BE3

Vishay Siliconix

MOSFET N-CH 40V 14A/50A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 48.1W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

Request a Quote

SQ3481EV-T1_BE3

Vishay Siliconix

MOSFET P-CHANNEL 30V 7.5A 6TSOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 4W (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.3A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: -

Request a Quote