页 4 - Cree/Wolfspeed 产品

零件编号	制造商	描述	封装	库存
C3M0120090J-TR	Cree/Wolfspeed	MOSFET N-CH 900V 22A FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V Vgs (Max): +18V, -8V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	封装: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	库存6,736
C2M0045170D	Cree/Wolfspeed	MOSFET NCH 1.7KV 72A TO247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4V @ 18mA Gate Charge (Qg) (Max) @ Vgs: 188nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3672pF @ 1kV Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 50A, 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	封装: TO-247-3	库存10,692
C2M0280120D	Cree/Wolfspeed	MOSFET N-CH 1200V 10A TO-247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.8V @ 1.25mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 259pF @ 1000V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 370 mOhm @ 6A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	封装: TO-247-3	库存24,732
CGHV35060MP	Cree/Wolfspeed	RF MOSFET HEMT 50V 20TSSOP Transistor Type: HEMT Frequency: 2.7GHz ~ 3.5GHz Gain: 14.5dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 125mA Power - Output: 60W Voltage - Rated: 150V Package / Case: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad Supplier Device Package: 20-TSSOP	封装: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad	库存5,216
CGH27030S	Cree/Wolfspeed	RF MOSFET HEMT 28V 12VFDFN Transistor Type: HEMT Frequency: 6GHz Gain: 18.3dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 200mA Power - Output: 30W Voltage - Rated: 84V Package / Case: 12-VFDFN Exposed Pad Supplier Device Package: 12-DFN (4x3)	封装: 12-VFDFN Exposed Pad	库存3,264
CGH60120D	Cree/Wolfspeed	RF MOSFET HEMT 28V DIE Transistor Type: HEMT Frequency: 6GHz Gain: 13dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 1A Power - Output: 120W Voltage - Rated: 84V Package / Case: Die Supplier Device Package: Die	封装: Die	库存6,864
CGH40180PP	Cree/Wolfspeed	FET RF 84V 2.5GHZ 440199 Transistor Type: HEMT Frequency: 0Hz ~ 2.5GHz Gain: 19dB Voltage - Test: 28V Current Rating: 56A Noise Figure: - Current - Test: 2A Power - Output: 220W Voltage - Rated: 84V Package / Case: 440199 Supplier Device Package: 440199	封装: 440199	库存6,204
CGH55030F2	Cree/Wolfspeed	FET RF 84V 6GHZ 440166 Transistor Type: HEMT Frequency: 4.5GHz ~ 6GHz Gain: 11dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 250mA Power - Output: 30W Voltage - Rated: 84V Package / Case: 440166 Supplier Device Package: 440166	封装: 440166	库存6,204
CGH40006S	Cree/Wolfspeed	FET RF 84V 6GHZ 6QFN Transistor Type: HEMT Frequency: 0Hz ~ 6GHz Gain: 12dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 100mA Power - Output: 8W Voltage - Rated: 84V Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-QFN-EP (3x3)	封装: 6-VDFN Exposed Pad	库存14,580
CSD10030A	Cree/Wolfspeed	DIODE SCHOTTKY 300V 10A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 300V Capacitance @ Vr, F: 660pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2	库存7,632
CPW3-1700-S010B-WP	Cree/Wolfspeed	DIODE SILICON 1.7KV 10A CHIP Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 2V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 1700V Capacitance @ Vr, F: 880pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 175°C	封装: Die	库存3,376
C3D03060F	Cree/Wolfspeed	DIODE SCHOTTKY 600V 3A TO220-F2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 155pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220-F2 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2 Full Pack, Isolated Tab	库存15,132
CSD01060E-TR	Cree/Wolfspeed	DIODE SCHOTTKY 600V 1A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: 80pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存7,584
C4D08120E	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 8A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 3V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 250µA @ 1200V Capacitance @ Vr, F: 560pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存34,110
C3D10065I	Cree/Wolfspeed	DIODE SCHOTTKY 650V 10A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: - Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 650V Capacitance @ Vr, F: 480pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Isolated Tab Supplier Device Package: TO-220-2 Isolated Tab Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2 Isolated Tab	库存17,352
C3D02060E	Cree/Wolfspeed	DIODE SCHOTTKY 600V 2A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 120pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存20,388
C5D50065D	Cree/Wolfspeed	DIODE SCHOTTKY 650V 100A TO247-3 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 100A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 500µA @ 650V Capacitance @ Vr, F: 1970pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-247-3	库存6,612
C4D20120A	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 20A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 20A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 1200V Capacitance @ Vr, F: 1500pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2	库存16,320
CSD20030D	Cree/Wolfspeed	DIODE ARRAY SCHOTTKY 300V TO247 Diode Configuration: 1 Pair Common Cathode Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 300V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	封装: TO-247-3	库存2,304
CGHV27100-TB	Cree/Wolfspeed	EVAL BOARD FOR CGHV27100 Type: HEMT Frequency: 2.5GHz ~ 2.7GHz For Use With/Related Products: CGHV27100 Supplied Contents: Partially Populated Board - Main IC Not Included	封装: -	库存8,298
CMPA5585030F-TB	Cree/Wolfspeed	TEST BOARD Type: - Frequency: - For Use With/Related Products: - Supplied Contents: -	封装: -	库存3,222
CGHV14800F-TB	Cree/Wolfspeed	EVAL BOARD FOR CGHV14800 Type: HEMT Frequency: 1.2GHz ~ 1.4GHz For Use With/Related Products: CGHV14800 Supplied Contents: Partially Populated Board - Main IC Not Included	封装: -	库存6,390
CGHV31500F-TB	Cree/Wolfspeed	TEST FIXTURE FOR CGHV31500F Type: HEMT Frequency: 2.7GHz ~ 3.1GHz For Use With/Related Products: CGHV31500F Supplied Contents: Partially Populated Board - Main IC Not Included	封装: -	库存4,356
CGHV96050F2-TB	Cree/Wolfspeed	TEST FIXTURE FOR CGHV96050F2 Type: FET Frequency: 8.4GHz ~ 9.6GHz For Use With/Related Products: CGHV96050 Supplied Contents: Partially Populated Board - Main IC Not Included	封装: -	库存8,388
CMPA0060002F-TB	Cree/Wolfspeed	BOARD DEMO AMP CIRC CMPA0060002 Type: Amplifier Frequency: 6GHz For Use With/Related Products: CMPA0060002F Supplied Contents: Partially Populated Board - Main IC Not Included	封装: -	库存3,942
CGH40010F-TB	Cree/Wolfspeed	BOARD DEMO AMP CIRCUIT CGH40010 Type: HEMT Frequency: 0Hz ~ 6GHz For Use With/Related Products: CGH40010F/ CGH40010P Supplied Contents: Partially Populated Board - Main IC Not Included	封装: -	库存8,640
CMPA5585030F	Cree/Wolfspeed	IC Frequency: 5.5GHz ~ 8.5GHz P1dB: - Gain: 26dB Noise Figure: - RF Type: - Voltage - Supply: 28V Current - Supply: - Test Frequency: - Package / Case: 440213 Supplier Device Package: 440213	封装: 440213	库存2,466
CMPA5585025F	Cree/Wolfspeed	IC AMP GAN HEMT MMIC 440208 Frequency: 5.5GHz ~ 8.5GHz P1dB: - Gain: 22dB Noise Figure: - RF Type: General Purpose Voltage - Supply: - Current - Supply: - Test Frequency: 8.4GHz Package / Case: 440208 Supplier Device Package: 440208	封装: 440208	库存4,950

C3M0120090J-TR

Cree/Wolfspeed

MOSFET N-CH 900V 22A

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
Vgs (Max): +18V, -8V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

封装: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

库存6,736

C2M0045170D

Cree/Wolfspeed

MOSFET NCH 1.7KV 72A TO247

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 4V @ 18mA
Gate Charge (Qg) (Max) @ Vgs: 188nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3672pF @ 1kV
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 70 mOhm @ 50A, 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

封装: TO-247-3

库存10,692

C2M0280120D

Cree/Wolfspeed

MOSFET N-CH 1200V 10A TO-247-3

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 2.8V @ 1.25mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 259pF @ 1000V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 370 mOhm @ 6A, 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

封装: TO-247-3

库存24,732

CGHV35060MP

Cree/Wolfspeed

RF MOSFET HEMT 50V 20TSSOP

Transistor Type: HEMT
Frequency: 2.7GHz ~ 3.5GHz
Gain: 14.5dB
Voltage - Test: 50V
Current Rating: -
Noise Figure: -
Current - Test: 125mA
Power - Output: 60W
Voltage - Rated: 150V
Package / Case: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad
Supplier Device Package: 20-TSSOP

封装: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad

库存5,216

CGH27030S

Cree/Wolfspeed

RF MOSFET HEMT 28V 12VFDFN

Transistor Type: HEMT
Frequency: 6GHz
Gain: 18.3dB
Voltage - Test: 28V
Current Rating: -
Noise Figure: -
Current - Test: 200mA
Power - Output: 30W
Voltage - Rated: 84V
Package / Case: 12-VFDFN Exposed Pad
Supplier Device Package: 12-DFN (4x3)

封装: 12-VFDFN Exposed Pad

库存3,264

CGH60120D

Cree/Wolfspeed

RF MOSFET HEMT 28V DIE

Transistor Type: HEMT
Frequency: 6GHz
Gain: 13dB
Voltage - Test: 28V
Current Rating: -
Noise Figure: -
Current - Test: 1A
Power - Output: 120W
Voltage - Rated: 84V
Package / Case: Die
Supplier Device Package: Die

封装: Die

库存6,864

CGH40180PP

Cree/Wolfspeed

FET RF 84V 2.5GHZ 440199

Transistor Type: HEMT
Frequency: 0Hz ~ 2.5GHz
Gain: 19dB
Voltage - Test: 28V
Current Rating: 56A
Noise Figure: -
Current - Test: 2A
Power - Output: 220W
Voltage - Rated: 84V
Package / Case: 440199
Supplier Device Package: 440199

封装: 440199

库存6,204

CGH55030F2

Cree/Wolfspeed

FET RF 84V 6GHZ 440166

Transistor Type: HEMT
Frequency: 4.5GHz ~ 6GHz
Gain: 11dB
Voltage - Test: 28V
Current Rating: -
Noise Figure: -
Current - Test: 250mA
Power - Output: 30W
Voltage - Rated: 84V
Package / Case: 440166
Supplier Device Package: 440166

封装: 440166

库存6,204

CGH40006S

Cree/Wolfspeed

FET RF 84V 6GHZ 6QFN

Transistor Type: HEMT
Frequency: 0Hz ~ 6GHz
Gain: 12dB
Voltage - Test: 28V
Current Rating: -
Noise Figure: -
Current - Test: 100mA
Power - Output: 8W
Voltage - Rated: 84V
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-QFN-EP (3x3)

封装: 6-VDFN Exposed Pad

库存14,580

CSD10030A

Cree/Wolfspeed

DIODE SCHOTTKY 300V 10A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 300V
Capacitance @ Vr, F: 660pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2

库存7,632

CPW3-1700-S010B-WP

Cree/Wolfspeed

DIODE SILICON 1.7KV 10A CHIP

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 2V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 1700V
Capacitance @ Vr, F: 880pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 175°C

封装: Die

库存3,376

C3D03060F

Cree/Wolfspeed

DIODE SCHOTTKY 600V 3A TO220-F2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 155pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: TO-220-F2
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2 Full Pack, Isolated Tab

库存15,132

CSD01060E-TR

Cree/Wolfspeed

DIODE SCHOTTKY 600V 1A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存7,584

C4D08120E

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 8A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 3V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存34,110

C3D10065I

Cree/Wolfspeed

DIODE SCHOTTKY 650V 10A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: -
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 650V
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Isolated Tab
Supplier Device Package: TO-220-2 Isolated Tab
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2 Isolated Tab

库存17,352

C3D02060E

Cree/Wolfspeed

DIODE SCHOTTKY 600V 2A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存20,388

C5D50065D

Cree/Wolfspeed

DIODE SCHOTTKY 650V 100A TO247-3

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 100A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 500µA @ 650V
Capacitance @ Vr, F: 1970pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-247-3

库存6,612

C4D20120A

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 20A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 20A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2

库存16,320

CSD20030D

Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 300V TO247

Diode Configuration: 1 Pair Common Cathode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 300V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

封装: TO-247-3

库存2,304

CGHV27100-TB

Cree/Wolfspeed

EVAL BOARD FOR CGHV27100

Type: HEMT
Frequency: 2.5GHz ~ 2.7GHz
For Use With/Related Products: CGHV27100
Supplied Contents: Partially Populated Board - Main IC Not Included

封装: -

库存8,298

CMPA5585030F-TB

Cree/Wolfspeed

TEST BOARD

Type: -
Frequency: -
For Use With/Related Products: -
Supplied Contents: -

封装: -

库存3,222

CGHV14800F-TB

Cree/Wolfspeed

EVAL BOARD FOR CGHV14800

Type: HEMT
Frequency: 1.2GHz ~ 1.4GHz
For Use With/Related Products: CGHV14800
Supplied Contents: Partially Populated Board - Main IC Not Included

封装: -

库存6,390

CGHV31500F-TB

Cree/Wolfspeed

TEST FIXTURE FOR CGHV31500F

Type: HEMT
Frequency: 2.7GHz ~ 3.1GHz
For Use With/Related Products: CGHV31500F
Supplied Contents: Partially Populated Board - Main IC Not Included

封装: -

库存4,356

CGHV96050F2-TB

Cree/Wolfspeed

TEST FIXTURE FOR CGHV96050F2

Type: FET
Frequency: 8.4GHz ~ 9.6GHz
For Use With/Related Products: CGHV96050
Supplied Contents: Partially Populated Board - Main IC Not Included

封装: -

库存8,388

CMPA0060002F-TB

Cree/Wolfspeed

BOARD DEMO AMP CIRC CMPA0060002

Type: Amplifier
Frequency: 6GHz
For Use With/Related Products: CMPA0060002F
Supplied Contents: Partially Populated Board - Main IC Not Included

封装: -

库存3,942

CGH40010F-TB

Cree/Wolfspeed

BOARD DEMO AMP CIRCUIT CGH40010

Type: HEMT
Frequency: 0Hz ~ 6GHz
For Use With/Related Products: CGH40010F/ CGH40010P
Supplied Contents: Partially Populated Board - Main IC Not Included

封装: -

库存8,640

CMPA5585030F

Cree/Wolfspeed

IC

Frequency: 5.5GHz ~ 8.5GHz
P1dB: -
Gain: 26dB
Noise Figure: -
RF Type: -
Voltage - Supply: 28V
Current - Supply: -
Test Frequency: -
Package / Case: 440213
Supplier Device Package: 440213

封装: 440213

库存2,466

CMPA5585025F

Cree/Wolfspeed

IC AMP GAN HEMT MMIC 440208

Frequency: 5.5GHz ~ 8.5GHz
P1dB: -
Gain: 22dB
Noise Figure: -
RF Type: General Purpose
Voltage - Supply: -
Current - Supply: -
Test Frequency: 8.4GHz
Package / Case: 440208
Supplier Device Package: 440208

封装: 440208

库存4,950