EPC 产品 | 黑森尔电子

零件编号	制造商	描述	封装	库存
EPC8003ENGR	EPC	TRANS GAN 100V 2.5A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 50V Vgs (Max): +6V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 300 mOhm @ 500mA, 5V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	封装: Die	库存2,912
EPC8008ENGR	EPC	TRANS GAN 40V 2.7A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.18nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 20V Vgs (Max): +6V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 325 mOhm @ 500mA, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	封装: Die	库存5,568
EPC2029ENGRT	EPC	TRANS GAN 80V 31A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 31A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 40V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	封装: Die	库存7,984
EPC2024ENG	EPC	TRANS GAN 40V 60A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 19mA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 37A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	封装: Die	库存3,920
EPC2021ENG	EPC	TRANS GAN 80V 60A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 14mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 40V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 29A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	封装: Die	库存7,752
EPC2037ENGR	EPC	TRANS GAN 100V BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 0.12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 50V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 550 mOhm @ 100mA, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	封装: Die	库存43,776
EPC2035	EPC	TRANS GAN 60V 1A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 30V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 45 mOhm @ 1A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	封装: Die	库存342,840
EPC2032	EPC	TRANS GAN 100V 48A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 48A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 11mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 50V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	封装: Die	库存70,512
EPC2001	EPC	TRANS GAN 100V 25A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 50V Vgs (Max): +6V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (11-Solder Bar) Package / Case: Die	封装: Die	库存223,170
EPC2015C	EPC	TRANS GAN 40V 33A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 53A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 9mA Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 20V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 4 mOhm @ 33A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	封装: Die	库存224,706
EPC2019	EPC	TRANS GAN 200V 8.5A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 50 mOhm @ 7A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	封装: Die	库存279,426
EPC2007C	EPC	TRANS GAN 100V 6A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 50V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (5-Solder Bar) Package / Case: Die	封装: Die	库存129,366
EPC2107ENGRT	EPC	TRANS GAN 3N-CH 100V BUMPED DIE FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA Rds On (Max) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-VFBGA Supplier Device Package: 9-BGA (1.35x1.35)	封装: 9-VFBGA	库存4,496
EPC2101ENGRT	EPC	TRANS GAN ASYMMETRICAL HALF BRID FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: Die	库存3,200
EPC2105ENGRT	EPC	MOSFET 2NCH 80V 9.5A DIE FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 9.5A Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: Die	库存46,992
GAN FET BOOK-WIPO	EPC	TEXT WIRELESS POWER HANDBOOK Accessory Type: Guide For Use With/Related Products: -	封装: -	库存2,304
EPC2112ENGRT	EPC	200 V GAN IC FET DRIVER Output Configuration: Low Side Applications: DC-DC Converters Interface: On/Off Load Type: Inductive Technology: MOSFET (Metal Oxide) Rds On (Typ): 32 mOhm Current - Output / Channel: 10A Current - Peak Output: 40A Voltage - Supply: 4.5 V ~ 5.5 V Voltage - Load: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 150°C (TJ) Features: - Fault Protection: - Mounting Type: Surface Mount Package / Case: 10-XFBGA Supplier Device Package: 10-BGA (2.9x1.1)	封装: 10-XFBGA	库存3,024
EPC21603	EPC	IC LASER DRVR 40V 10A LVDSLOGIC Type: Laser Diode Driver Data Rate: - Number of Channels: 1 Voltage - Supply: 10V ~ 30V Current - Supply: 47 mA Current - Modulation: - Current - Bias: - Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: Die Supplier Device Package: Die Mounting Type: Surface Mount	封装: -	库存29,700
EPC21701	EPC	IC GAN LASER DRVR 80V Type: Laser Diode Driver Data Rate: - Number of Channels: 1 Voltage - Supply: 80V Current - Supply: - Current - Modulation: - Current - Bias: - Operating Temperature: - Package / Case: - Supplier Device Package: - Mounting Type: -	封装: -	库存114,174
EPC23101	EPC	Linear IC's Applications: Switching Regulator Current - Supply: 37mA Voltage - Supply: 10V ~ 80V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 14-PowerWFQFN Supplier Device Package: 14-QFN (3.5x5)	封装: -	Request a Quote
EPC2204A	EPC	TRANS GAN 80V .006OHM AECQ101 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	封装: -	库存85,602
EPC2619ENGRT	EPC	TRANS GAN 80V .0033OHM 6LGA FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	封装: -	库存57,309
EPC2305ENGRT	EPC	TRANS GAN 150V .003OHM 3X5MM QFN FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 11mA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 75 V Vgs (Max): 6V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 7-QFN (3x5) Package / Case: 7-PowerWQFN	封装: -	库存7,245
EPC2206	EPC	GANFET N-CH 80V 90A DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 13mA Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	封装: -	库存182,820
EPC2102	EPC	GANFET 2N-CH 60V 23A DIE FET Type: GaNFET (Gallium Nitride) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 23A Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	库存375
EPC2101	EPC	GANFET 2N-CH 60V 9.5A/38A DIE FET Type: GaNFET (Gallium Nitride) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA, 2.5V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V, 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V, 1200pF @ 30V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	库存99
EPC2110	EPC	GANFET 2N-CH 120V 3.4A DIE FET Type: GaNFET (Gallium Nitride) FET Feature: - Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V Vgs(th) (Max) @ Id: 2.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: - Package / Case: Die Supplier Device Package: Die	封装: -	库存43,275
EPC2044	EPC	TRANSISTOR GAN 40V .0105OHM FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 664 pF @ 50 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	封装: -	库存21,759
EPC2071	EPC	TRANS GAN 100V .0022OHM 21BMPD FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 64A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 13mA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3931 pF @ 50 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	封装: -	库存26,166
EPC23101ENGRT	EPC	TRANS GAN 100V EPOWER STAGE Output Configuration: Half Bridge Applications: General Purpose Interface: Logic Load Type: Inductive, Capacitive, Resistive Technology: Gallium Nitride (GaN) FETs Rds On (Typ): 3.3mOhm Current - Output / Channel: 65A Current - Peak Output: - Voltage - Supply: 10V ~ 80V Voltage - Load: 10V ~ 80V Operating Temperature: -40°C ~ 125°C (TJ) Features: Bootstrap Circuit, Slew Rate Controlled Fault Protection: ESD, UVLO Mounting Type: Surface Mount, Wettable Flank Package / Case: 14-PowerWFQFN Supplier Device Package: 14-QFN (3.5x5)	封装: -	库存22,563

EPC8003ENGR

EPC

TRANS GAN 100V 2.5A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.32nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 50V
Vgs (Max): +6V, -5V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 300 mOhm @ 500mA, 5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

封装: Die

库存2,912

EPC8008ENGR

EPC

TRANS GAN 40V 2.7A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.18nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 20V
Vgs (Max): +6V, -5V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 325 mOhm @ 500mA, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

封装: Die

库存5,568

EPC2029ENGRT

EPC

TRANS GAN 80V 31A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 40V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

封装: Die

库存7,984

EPC2024ENG

EPC

TRANS GAN 40V 60A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 19mA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 37A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

封装: Die

库存3,920

EPC2021ENG

EPC

TRANS GAN 80V 60A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 40V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 29A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

封装: Die

库存7,752

EPC2037ENGR

EPC

TRANS GAN 100V BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs: 0.12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 50V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 550 mOhm @ 100mA, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

封装: Die

库存43,776

EPC2035

EPC

TRANS GAN 60V 1A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 800µA
Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 30V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 45 mOhm @ 1A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

封装: Die

库存342,840

EPC2032

EPC

TRANS GAN 100V 48A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 50V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

封装: Die

库存70,512

EPC2001

EPC

TRANS GAN 100V 25A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 50V
Vgs (Max): +6V, -5V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die Outline (11-Solder Bar)
Package / Case: Die

封装: Die

库存223,170

EPC2015C

EPC

TRANS GAN 40V 33A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 20V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 4 mOhm @ 33A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

封装: Die

库存224,706

EPC2019

EPC

TRANS GAN 200V 8.5A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 50 mOhm @ 7A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

封装: Die

库存279,426

EPC2007C

EPC

TRANS GAN 100V 6A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 50V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die Outline (5-Solder Bar)
Package / Case: Die

封装: Die

库存129,366

EPC2107ENGRT

EPC

TRANS GAN 3N-CH 100V BUMPED DIE

FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Rds On (Max) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Supplier Device Package: 9-BGA (1.35x1.35)

封装: 9-VFBGA

库存4,496

EPC2101ENGRT

EPC

TRANS GAN ASYMMETRICAL HALF BRID

FET Type: 2 N-Channel (Half Bridge)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: Die

库存3,200

EPC2105ENGRT

EPC

MOSFET 2NCH 80V 9.5A DIE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.5A
Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: Die

库存46,992

GAN FET BOOK-WIPO

EPC

TEXT WIRELESS POWER HANDBOOK

Accessory Type: Guide
For Use With/Related Products: -

封装: -

库存2,304

EPC2112ENGRT

EPC

200 V GAN IC FET DRIVER

Output Configuration: Low Side
Applications: DC-DC Converters
Interface: On/Off
Load Type: Inductive
Technology: MOSFET (Metal Oxide)
Rds On (Typ): 32 mOhm
Current - Output / Channel: 10A
Current - Peak Output: 40A
Voltage - Supply: 4.5 V ~ 5.5 V
Voltage - Load: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 150°C (TJ)
Features: -
Fault Protection: -
Mounting Type: Surface Mount
Package / Case: 10-XFBGA
Supplier Device Package: 10-BGA (2.9x1.1)

封装: 10-XFBGA

库存3,024

EPC21603

EPC

IC LASER DRVR 40V 10A LVDSLOGIC

Type: Laser Diode Driver
Data Rate: -
Number of Channels: 1
Voltage - Supply: 10V ~ 30V
Current - Supply: 47 mA
Current - Modulation: -
Current - Bias: -
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: Die
Supplier Device Package: Die
Mounting Type: Surface Mount

封装: -

库存29,700

EPC21701

EPC

IC GAN LASER DRVR 80V

Type: Laser Diode Driver
Data Rate: -
Number of Channels: 1
Voltage - Supply: 80V
Current - Supply: -
Current - Modulation: -
Current - Bias: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -
Mounting Type: -

封装: -

库存114,174

EPC23101

EPC

Linear IC's

Applications: Switching Regulator
Current - Supply: 37mA
Voltage - Supply: 10V ~ 80V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 14-PowerWFQFN
Supplier Device Package: 14-QFN (3.5x5)

封装: -

Request a Quote

EPC2204A

EPC

TRANS GAN 80V .006OHM AECQ101

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

封装: -

库存85,602

EPC2619ENGRT

EPC

TRANS GAN 80V .0033OHM 6LGA

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

封装: -

库存57,309

EPC2305ENGRT

EPC

TRANS GAN 150V .003OHM 3X5MM QFN

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 75 V
Vgs (Max): 6V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 7-QFN (3x5)
Package / Case: 7-PowerWQFN

封装: -

库存7,245

EPC2206

EPC

GANFET N-CH 80V 90A DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

封装: -

库存182,820

EPC2102

EPC

GANFET 2N-CH 60V 23A DIE

FET Type: GaNFET (Gallium Nitride)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

库存375

EPC2101

EPC

GANFET 2N-CH 60V 9.5A/38A DIE

FET Type: GaNFET (Gallium Nitride)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA, 2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V, 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V, 1200pF @ 30V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

库存99

EPC2110

EPC

GANFET 2N-CH 120V 3.4A DIE

FET Type: GaNFET (Gallium Nitride)
FET Feature: -
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: -
Package / Case: Die
Supplier Device Package: Die

封装: -

库存43,275

EPC2044

EPC

TRANSISTOR GAN 40V .0105OHM

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 664 pF @ 50 V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

封装: -

库存21,759

EPC2071

EPC

TRANS GAN 100V .0022OHM 21BMPD

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 64A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3931 pF @ 50 V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

封装: -

库存26,166

EPC23101ENGRT

EPC

TRANS GAN 100V EPOWER STAGE

Output Configuration: Half Bridge
Applications: General Purpose
Interface: Logic
Load Type: Inductive, Capacitive, Resistive
Technology: Gallium Nitride (GaN) FETs
Rds On (Typ): 3.3mOhm
Current - Output / Channel: 65A
Current - Peak Output: -
Voltage - Supply: 10V ~ 80V
Voltage - Load: 10V ~ 80V
Operating Temperature: -40°C ~ 125°C (TJ)
Features: Bootstrap Circuit, Slew Rate Controlled
Fault Protection: ESD, UVLO
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 14-PowerWFQFN
Supplier Device Package: 14-QFN (3.5x5)

封装: -

库存22,563