Infineon Technologies 产品 - 晶体管 - FET，MOSFET - 单

BSL202SNL6327HTSA1

Infineon Technologies

MOSFET N-CH 20V 7.5A TSOP-6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 30µA
• Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1147pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TSOP6-6
• Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

BSC0909NSATMA1

Infineon Technologies

MOSFET N-CH 34V 44A 8TDSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 34V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
• Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

IRLHS2242TRPBF

Infineon Technologies

MOSFET P-CH 20V 15A 2X2 PQFN

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.1V @ 10µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 877pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 9.6W (Tc)
• Rds On (Max) @ Id, Vgs: 31 mOhm @ 8.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-PQFN (2x2)
• Package / Case: 6-PowerVDFN

封装: 6-PowerVDFN

IPD50R1K4CEBTMA1

Infineon Technologies

MOSFET N-CH 500V 3.1A PG-TO-252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 13V
• Vgs(th) (Max) @ Id: 3.5V @ 70µA
• Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 178pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 25W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 900mA, 13V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

BSP92PH6327XTSA1

Infineon Technologies

MOSFET P-CH 250V 260MA 4SOT223

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
• Vgs(th) (Max) @ Id: 2V @ 130µA
• Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 104pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta)
• Rds On (Max) @ Id, Vgs: 12 Ohm @ 260mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT223-4
• Package / Case: TO-261-4, TO-261AA

封装: TO-261-4, TO-261AA

IPD60R2K1CEAUMA1

Infineon Technologies

MOSFET N-CH 600V 2.3A TO-252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 60µA
• Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 38W (Tc)
• Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 760mA, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF7606TR

Infineon Technologies

MOSFET P-CH 30V 3.6A MICRO8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta)
• Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Micro8?
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

IRLMS6702TRPBF

Infineon Technologies

MOSFET P-CH 20V 2.4A 6-TSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
• Vgs(th) (Max) @ Id: 700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.7W (Ta)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.6A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Micro6?(TSOP-6)
• Package / Case: SOT-23-6

封装: SOT-23-6

BSL606SNH6327XTSA1

Infineon Technologies

MOSFET N-CH 60V 4.5A 6TSOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 15µA
• Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 657pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TSOP6-6
• Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

SPD03N60C3

Infineon Technologies

MOSFET N-CH 650V 3.2A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 135µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 38W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IPD60R600E6

Infineon Technologies

MOSFET N-CH 600V 7.3A TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 63W (Tc)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFH3707TRPBF

Infineon Technologies

MOSFET N-CH 30V 12A PQFN56

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 29A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.8W (Ta)
• Rds On (Max) @ Id, Vgs: 12.4 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PQFN (3x3)
• Package / Case: 8-PowerVDFN

封装: 8-PowerVDFN

BSR606NH6327XTSA1

Infineon Technologies

MOSFET N-CH 60V 2.3A SC59

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 15µA
• Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 657pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 2.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SC-59
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

IPD50R3K0CEAUMA1

Infineon Technologies

MOSFET N-CH 500V 1.7A PG-TO-252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 13V
• Vgs(th) (Max) @ Id: 3.5V @ 30µA
• Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 84pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 26W (Tc)
• Rds On (Max) @ Id, Vgs: 3 Ohm @ 400mA, 13V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF5801TRPBF

Infineon Technologies

MOSFET N-CH 200V 600MA 6-TSOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 360mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Micro6?(TSOP-6)
• Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

BSS205NH6327XTSA1

Infineon Technologies

MOSFET N-CH 20V 2.5A SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 11µA
• Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

IPN60R2K1CEATMA1

Infineon Technologies

MOSFET NCH 600V 3.7A SOT223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 60µA
• Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V
• Vgs (Max): ±20V
• FET Feature: Super Junction
• Power Dissipation (Max): 5W (Tc)
• Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 800mA, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT223
• Package / Case: SOT-223-3

封装: SOT-223-3

IRF7422D2TRPBF

Infineon Technologies

MOSFET P-CH 20V 4.3A 8-SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
• Vgs(th) (Max) @ Id: 700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
• Vgs (Max): ±12V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

IRLML6401GTRPBF

Infineon Technologies

MOSFET P-CH 12V 4.3A SOT-23-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 950mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.3W (Ta)
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.3A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Micro3?/SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

IRFTS8342TRPBF

Infineon Technologies

MOSFET N-CH 30V 8.2A 6TSOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SOT-23-6

封装: SOT-23-6

IPN60R3K4CEATMA1

Infineon Technologies

MOSFET NCH 600V 2.6A SOT223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 40µA
• Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 100V
• Vgs (Max): ±20V
• FET Feature: Super Junction
• Power Dissipation (Max): 5W (Tc)
• Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 500mA, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT223
• Package / Case: TO-261-4, TO-261AA

封装: TO-261-4, TO-261AA

BSR316PH6327XTSA1

Infineon Technologies

MOSFET P-CH 100V 360MA SC-59-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 170µA
• Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500mW (Tc)
• Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 360mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SC-59
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

IPD50R650CE

Infineon Technologies

MOSFET N CH 500V 6.1A PG-TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 13V
• Vgs(th) (Max) @ Id: 3.5V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 342pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 47W (Tc)
• Rds On (Max) @ Id, Vgs: 650 mOhm @ 1.8A, 13V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF7421D1TRPBF

Infineon Technologies

MOSFET N-CH 30V 5.8A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

IRF7324D1TRPBF

Infineon Technologies

MOSFET P-CH 20V 2.2A 8-SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
• Vgs(th) (Max) @ Id: 700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
• Vgs (Max): ±12V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

BSR302NL6327HTSA1

Infineon Technologies

MOSFET N-CH 30V 3.7A SC-59

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 30µA
• Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 23 mOhm @ 3.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SC-59
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

BSD316SNL6327XT

Infineon Technologies

MOSFET N-CH 30V 1.4A SOT-363

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 3.7µA
• Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT363-6
• Package / Case: 6-VSSOP, SC-88, SOT-363

封装: 6-VSSOP, SC-88, SOT-363

SN7002NH6327XTSA1

Infineon Technologies

MOSFET N-CH 60V 200MA SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 26µA
• Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360mW (Ta)
• Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3