页 147 - Infineon Technologies 产品 - 晶体管 - FET，MOSFET - 单

IPD25N06S4L30ATMA2

Infineon Technologies

MOSFET N-CH 60V 25A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 8µA
Gate Charge (Qg) (Max) @ Vgs: 16.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 29W (Tc)
Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-11
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存4,704

MOSFET (Metal Oxide)

60V

25A (Tc)

4.5V, 10V

2.2V @ 8µA

16.3nC @ 10V

1220pF @ 25V

±16V

-

29W (Tc)

30 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3-11

TO-252-3, DPak (2 Leads + Tab), SC-63

IPS60R1K0CEAKMA1

Infineon Technologies

CONSUMER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存2,896

-

IPD50R650CEAUMA1

Infineon Technologies

CONSUMER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存3,200

-

BSC440N10NS3GATMA1

Infineon Technologies

MOSFET N-CH 100V 18A TDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 29W (Tc)
Rds On (Max) @ Id, Vgs: 44 mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

库存3,520

MOSFET (Metal Oxide)

100V

5.3A (Ta), 18A (Tc)

6V, 10V

3.5V @ 12µA

10.8nC @ 10V

810pF @ 50V

±20V

-

29W (Tc)

44 mOhm @ 12A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8

8-PowerTDFN

IPB22N03S4L15ATMA1

Infineon Technologies

MOSFET N-CH 30V 22A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 14.6 mOhm @ 22A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存7,808

MOSFET (Metal Oxide)

30V

22A (Tc)

4.5V, 10V

2.2V @ 10µA

14nC @ 10V

980pF @ 25V

±16V

-

31W (Tc)

14.6 mOhm @ 22A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPD65R1K0CEAUMA1

Infineon Technologies

MOSFET N-CH 650V TO-252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 328pF @ 100V
Vgs (Max): ±20V
FET Feature: Super Junction
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存2,304

MOSFET (Metal Oxide)

650V

7.2A (Tc)

10V

3.5V @ 200µA

15.3nC @ 10V

328pF @ 100V

±20V

Super Junction

68W (Tc)

1 Ohm @ 1.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPak (2 Leads + Tab), SC-63

BSP296NH6433XTMA1

Infineon Technologies

MOSFET N-CH 100V 1.1A SOT-223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 152.7pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 600 mOhm @ 1.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223-4
Package / Case: TO-261-4, TO-261AA

封装: TO-261-4, TO-261AA

库存6,224

MOSFET (Metal Oxide)

100V

1.2A (Ta)

4.5V, 10V

1.8V @ 100µA

6.7nC @ 10V

152.7pF @ 25V

±20V

-

1.8W (Ta)

600 mOhm @ 1.2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-SOT223-4

TO-261-4, TO-261AA

IPD60R800CEAUMA1

Infineon Technologies

CONSUMER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存7,376

-

IPD25N06S240ATMA2

Infineon Technologies

MOSFET N-CH 55V 29A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 40 mOhm @ 13A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-11
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存4,976

MOSFET (Metal Oxide)

55V

29A (Tc)

10V

4V @ 26µA

18nC @ 10V

513pF @ 25V

±20V

-

68W (Tc)

40 mOhm @ 13A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3-11

TO-252-3, DPak (2 Leads + Tab), SC-63

IRF9332TRPBF

Infineon Technologies

MOSFET P-CH 30V 9.8A 8SOIC

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 9.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

库存6,016

MOSFET (Metal Oxide)

30V

9.8A (Ta)

4.5V, 10V

2.4V @ 25µA

41nC @ 10V

1270pF @ 25V

±20V

-

2.5W (Ta)

17.5 mOhm @ 9.8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

IPN70R1K0CEATMA1

Infineon Technologies

MOSFET COOLMOS 700V SOT223-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 750V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 14.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 328pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223
Package / Case: TO-261-4, TO-261AA

封装: TO-261-4, TO-261AA

库存4,368

MOSFET (Metal Oxide)

750V

7.4A (Tc)

10V

3.5V @ 150µA

14.9nC @ 10V

328pF @ 100V

±20V

-

5W (Tc)

1 Ohm @ 1.5A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-SOT223

TO-261-4, TO-261AA

IRFL014NPBF

Infineon Technologies

MOSFET N-CH 55V 1.9A SOT223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA

封装: TO-261-4, TO-261AA

库存18,264

MOSFET (Metal Oxide)

55V

1.9A (Ta)

10V

4V @ 250µA

11nC @ 10V

190pF @ 25V

±20V

-

1W (Ta)

160 mOhm @ 1.9A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223

TO-261-4, TO-261AA

IRF7201PBF

Infineon Technologies

MOSFET N-CH 30V 7.3A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

库存531,876

MOSFET (Metal Oxide)

30V

7.3A (Tc)

4.5V, 10V

1V @ 250µA

28nC @ 10V

550pF @ 25V

±20V

-

2.5W (Tc)

30 mOhm @ 7.3A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

BSZ0994NSATMA1

Infineon Technologies

MOSFET N-CH 30V 8TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 7 mOhm @ 5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

库存3,296

MOSFET (Metal Oxide)

30V

13A (Ta)

4.5V, 10V

2V @ 250µA

7nC @ 4.5V

890pF @ 15V

±20V

-

2.1W (Ta)

7 mOhm @ 5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8

8-PowerTDFN

IPD14N06S280ATMA2

Infineon Technologies

MOSFET N-CH 55V 17A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 14µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 293pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 80 mOhm @ 7A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-11
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存4,640

MOSFET (Metal Oxide)

55V

17A (Tc)

10V

4V @ 14µA

10nC @ 10V

293pF @ 25V

±20V

-

47W (Tc)

80 mOhm @ 7A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3-11

TO-252-3, DPak (2 Leads + Tab), SC-63

BSO110N03MSGXUMA1

Infineon Technologies

MOSFET N-CH 30V 10A 8DSO

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 11 mOhm @ 12.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-8
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

库存4,400

MOSFET (Metal Oxide)

30V

10A (Ta)

4.5V, 10V

2V @ 250µA

20nC @ 10V

1500pF @ 15V

±20V

-

1.56W (Ta)

11 mOhm @ 12.1A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-DSO-8

8-SOIC (0.154", 3.90mm Width)

BSL373SNH6327XTSA1

Infineon Technologies

MOSFET N-CH 100V 2A 6TSOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 218µA
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 230 mOhm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSOP-6-1
Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

库存3,216

MOSFET (Metal Oxide)

100V

2A (Ta)

10V

4V @ 218µA

9.3nC @ 10V

265pF @ 25V

±20V

-

2W (Ta)

230 mOhm @ 2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSOP-6-1

SOT-23-6 Thin, TSOT-23-6

IRLL014NPBF

Infineon Technologies

MOSFET N-CH 55V 2A SOT223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 140 mOhm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA

封装: TO-261-4, TO-261AA

库存42,708

MOSFET (Metal Oxide)

55V

2A (Ta)

4V, 10V

2V @ 250µA

14nC @ 10V

230pF @ 25V

±16V

-

1W (Ta)

140 mOhm @ 2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223

TO-261-4, TO-261AA

BSL296SNH6327XTSA1

Infineon Technologies

MOSFET N-CH 100V 1.4A 6TSOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 152.7pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 460 mOhm @ 1.26A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: P-TSOP6-6
Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

库存6,320

MOSFET (Metal Oxide)

100V

1.4A (Ta)

4.5V, 10V

1.8V @ 100µA

4nC @ 5V

152.7pF @ 25V

±20V

-

2W (Ta)

460 mOhm @ 1.26A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

P-TSOP6-6

SOT-23-6 Thin, TSOT-23-6

BSS169H6906XTSA1

Infineon Technologies

MOSFET N-CH 100V 170MA SOT23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 7V
Input Capacitance (Ciss) (Max) @ Vds: 68pF @ 10V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

库存7,856

MOSFET (Metal Oxide)

100V

170mA (Ta)

0V, 10V

1.8V @ 50µA

2.8nC @ 7V

68pF @ 10V

±20V

Depletion Mode

360mW (Ta)

6 Ohm @ 170mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-SOT23-3

TO-236-3, SC-59, SOT-23-3

IPD60R1K0CEAUMA1

Infineon Technologies

CONSUMER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存7,360

-

IPD135N03LGBTMA1

Infineon Technologies

LV POWER MOS

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存2,112

-

BSL372SNH6327XTSA1

Infineon Technologies

MOSFET N-CH 100V 2A 6TSOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 329pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 220 mOhm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSOP6-6
Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

库存5,088

MOSFET (Metal Oxide)

100V

2A (Ta)

4.5V, 10V

1.8V @ 218µA

14.3nC @ 10V

329pF @ 25V

±20V

-

2W (Ta)

220 mOhm @ 2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSOP6-6

SOT-23-6 Thin, TSOT-23-6

IRFHM8334TRPBF

Infineon Technologies

MOSFET N-CH 30V 13A 8PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.7W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 9 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

库存7,920

MOSFET (Metal Oxide)

30V

13A (Ta)

4.5V, 10V

2.35V @ 25µA

15nC @ 10V

1180pF @ 10V

±20V

-

2.7W (Ta), 28W (Tc)

9 mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-PQFN (3.3x3.3), Power33

8-PowerTDFN

IPS060N03LGAKMA1

Infineon Technologies

MOSFET N-CH 30V 50A TO251-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO251-3
Package / Case: TO-251-3 Stub Leads, IPak

封装: TO-251-3 Stub Leads, IPak

库存2,848

MOSFET (Metal Oxide)

30V

50A (Tc)

4.5V, 10V

2.2V @ 250µA

23nC @ 10V

2400pF @ 15V

±20V

-

56W (Tc)

6 mOhm @ 30A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO251-3

TO-251-3 Stub Leads, IPak

IPC028N03L3X1SA1

Infineon Technologies

MOSFET N-CH 30V SAWN BARE DIE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Sawn on foil
Package / Case: Die

封装: Die

库存4,128

MOSFET (Metal Oxide)

30V

2A (Tj)

10V

2.2V @ 250µA

-

50 mOhm @ 2A, 10V

-

Surface Mount

Sawn on foil

Die

IPD50R800CEAUMA1

Infineon Technologies

CONSUMER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存2,656

-

IRF9410TRPBF

Infineon Technologies

MOSFET N-CH 30V 7A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

库存975,432

MOSFET (Metal Oxide)

30V

7A (Ta)

4.5V, 10V

1V @ 250µA

27nC @ 10V

550pF @ 25V

±20V

-

2.5W (Ta)

30 mOhm @ 7A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

零件编号	制造商	描述	封装	库存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPD25N06S4L30ATMA2	Infineon Technologies	MOSFET N-CH 60V 25A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 16.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 29W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存4,704	MOSFET (Metal Oxide)	60V	25A (Tc)	4.5V, 10V	2.2V @ 8µA	16.3nC @ 10V	1220pF @ 25V	±16V	-	29W (Tc)	30 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPak (2 Leads + Tab), SC-63
IPS60R1K0CEAKMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存2,896	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD50R650CEAUMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存3,200	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSC440N10NS3GATMA1	Infineon Technologies	MOSFET N-CH 100V 18A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 12µA Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 29W (Tc) Rds On (Max) @ Id, Vgs: 44 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	封装: 8-PowerTDFN	库存3,520	MOSFET (Metal Oxide)	100V	5.3A (Ta), 18A (Tc)	6V, 10V	3.5V @ 12µA	10.8nC @ 10V	810pF @ 50V	±20V	-	29W (Tc)	44 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IPB22N03S4L15ATMA1	Infineon Technologies	MOSFET N-CH 30V 22A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 14.6 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存7,808	MOSFET (Metal Oxide)	30V	22A (Tc)	4.5V, 10V	2.2V @ 10µA	14nC @ 10V	980pF @ 25V	±16V	-	31W (Tc)	14.6 mOhm @ 22A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPD65R1K0CEAUMA1	Infineon Technologies	MOSFET N-CH 650V TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 328pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存2,304	MOSFET (Metal Oxide)	650V	7.2A (Tc)	10V	3.5V @ 200µA	15.3nC @ 10V	328pF @ 100V	±20V	Super Junction	68W (Tc)	1 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
BSP296NH6433XTMA1	Infineon Technologies	MOSFET N-CH 100V 1.1A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 152.7pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 600 mOhm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	封装: TO-261-4, TO-261AA	库存6,224	MOSFET (Metal Oxide)	100V	1.2A (Ta)	4.5V, 10V	1.8V @ 100µA	6.7nC @ 10V	152.7pF @ 25V	±20V	-	1.8W (Ta)	600 mOhm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
IPD60R800CEAUMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存7,376	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD25N06S240ATMA2	Infineon Technologies	MOSFET N-CH 55V 29A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 26µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存4,976	MOSFET (Metal Oxide)	55V	29A (Tc)	10V	4V @ 26µA	18nC @ 10V	513pF @ 25V	±20V	-	68W (Tc)	40 mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF9332TRPBF	Infineon Technologies	MOSFET P-CH 30V 9.8A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 9.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	封装: 8-SOIC (0.154", 3.90mm Width)	库存6,016	MOSFET (Metal Oxide)	30V	9.8A (Ta)	4.5V, 10V	2.4V @ 25µA	41nC @ 10V	1270pF @ 25V	±20V	-	2.5W (Ta)	17.5 mOhm @ 9.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IPN70R1K0CEATMA1	Infineon Technologies	MOSFET COOLMOS 700V SOT223-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 750V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 14.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 328pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: TO-261-4, TO-261AA	封装: TO-261-4, TO-261AA	库存4,368	MOSFET (Metal Oxide)	750V	7.4A (Tc)	10V	3.5V @ 150µA	14.9nC @ 10V	328pF @ 100V	±20V	-	5W (Tc)	1 Ohm @ 1.5A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-SOT223	TO-261-4, TO-261AA
IRFL014NPBF	Infineon Technologies	MOSFET N-CH 55V 1.9A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	封装: TO-261-4, TO-261AA	库存18,264	MOSFET (Metal Oxide)	55V	1.9A (Ta)	10V	4V @ 250µA	11nC @ 10V	190pF @ 25V	±20V	-	1W (Ta)	160 mOhm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IRF7201PBF	Infineon Technologies	MOSFET N-CH 30V 7.3A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	封装: 8-SOIC (0.154", 3.90mm Width)	库存531,876	MOSFET (Metal Oxide)	30V	7.3A (Tc)	4.5V, 10V	1V @ 250µA	28nC @ 10V	550pF @ 25V	±20V	-	2.5W (Tc)	30 mOhm @ 7.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
BSZ0994NSATMA1	Infineon Technologies	MOSFET N-CH 30V 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Rds On (Max) @ Id, Vgs: 7 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	封装: 8-PowerTDFN	库存3,296	MOSFET (Metal Oxide)	30V	13A (Ta)	4.5V, 10V	2V @ 250µA	7nC @ 4.5V	890pF @ 15V	±20V	-	2.1W (Ta)	7 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IPD14N06S280ATMA2	Infineon Technologies	MOSFET N-CH 55V 17A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 14µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 293pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存4,640	MOSFET (Metal Oxide)	55V	17A (Tc)	10V	4V @ 14µA	10nC @ 10V	293pF @ 25V	±20V	-	47W (Tc)	80 mOhm @ 7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPak (2 Leads + Tab), SC-63
BSO110N03MSGXUMA1	Infineon Technologies	MOSFET N-CH 30V 10A 8DSO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 11 mOhm @ 12.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width)	封装: 8-SOIC (0.154", 3.90mm Width)	库存4,400	MOSFET (Metal Oxide)	30V	10A (Ta)	4.5V, 10V	2V @ 250µA	20nC @ 10V	1500pF @ 15V	±20V	-	1.56W (Ta)	11 mOhm @ 12.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-8	8-SOIC (0.154", 3.90mm Width)
BSL373SNH6327XTSA1	Infineon Technologies	MOSFET N-CH 100V 2A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 218µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 230 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSOP-6-1 Package / Case: SOT-23-6 Thin, TSOT-23-6	封装: SOT-23-6 Thin, TSOT-23-6	库存3,216	MOSFET (Metal Oxide)	100V	2A (Ta)	10V	4V @ 218µA	9.3nC @ 10V	265pF @ 25V	±20V	-	2W (Ta)	230 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSOP-6-1	SOT-23-6 Thin, TSOT-23-6
IRLL014NPBF	Infineon Technologies	MOSFET N-CH 55V 2A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 140 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	封装: TO-261-4, TO-261AA	库存42,708	MOSFET (Metal Oxide)	55V	2A (Ta)	4V, 10V	2V @ 250µA	14nC @ 10V	230pF @ 25V	±16V	-	1W (Ta)	140 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
BSL296SNH6327XTSA1	Infineon Technologies	MOSFET N-CH 100V 1.4A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 152.7pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 460 mOhm @ 1.26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TSOP6-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	封装: SOT-23-6 Thin, TSOT-23-6	库存6,320	MOSFET (Metal Oxide)	100V	1.4A (Ta)	4.5V, 10V	1.8V @ 100µA	4nC @ 5V	152.7pF @ 25V	±20V	-	2W (Ta)	460 mOhm @ 1.26A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	P-TSOP6-6	SOT-23-6 Thin, TSOT-23-6
BSS169H6906XTSA1	Infineon Technologies	MOSFET N-CH 100V 170MA SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs(th) (Max) @ Id: 1.8V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 7V Input Capacitance (Ciss) (Max) @ Vds: 68pF @ 10V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	封装: TO-236-3, SC-59, SOT-23-3	库存7,856	MOSFET (Metal Oxide)	100V	170mA (Ta)	0V, 10V	1.8V @ 50µA	2.8nC @ 7V	68pF @ 10V	±20V	Depletion Mode	360mW (Ta)	6 Ohm @ 170mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23-3	TO-236-3, SC-59, SOT-23-3
IPD60R1K0CEAUMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存7,360	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD135N03LGBTMA1	Infineon Technologies	LV POWER MOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存2,112	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSL372SNH6327XTSA1	Infineon Technologies	MOSFET N-CH 100V 2A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 218µA Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 329pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 220 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSOP6-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	封装: SOT-23-6 Thin, TSOT-23-6	库存5,088	MOSFET (Metal Oxide)	100V	2A (Ta)	4.5V, 10V	1.8V @ 218µA	14.3nC @ 10V	329pF @ 25V	±20V	-	2W (Ta)	220 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSOP6-6	SOT-23-6 Thin, TSOT-23-6
IRFHM8334TRPBF	Infineon Technologies	MOSFET N-CH 30V 13A 8PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Package / Case: 8-PowerTDFN	封装: 8-PowerTDFN	库存7,920	MOSFET (Metal Oxide)	30V	13A (Ta)	4.5V, 10V	2.35V @ 25µA	15nC @ 10V	1180pF @ 10V	±20V	-	2.7W (Ta), 28W (Tc)	9 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (3.3x3.3), Power33	8-PowerTDFN
IPS060N03LGAKMA1	Infineon Technologies	MOSFET N-CH 30V 50A TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 56W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	封装: TO-251-3 Stub Leads, IPak	库存2,848	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	2.2V @ 250µA	23nC @ 10V	2400pF @ 15V	±20V	-	56W (Tc)	6 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Stub Leads, IPak
IPC028N03L3X1SA1	Infineon Technologies	MOSFET N-CH 30V SAWN BARE DIE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Sawn on foil Package / Case: Die	封装: Die	库存4,128	MOSFET (Metal Oxide)	30V	2A (Tj)	10V	2.2V @ 250µA	-	-	-	-	-	50 mOhm @ 2A, 10V	-	Surface Mount	Sawn on foil	Die
IPD50R800CEAUMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存2,656	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF9410TRPBF	Infineon Technologies	MOSFET N-CH 30V 7A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	封装: 8-SOIC (0.154", 3.90mm Width)	库存975,432	MOSFET (Metal Oxide)	30V	7A (Ta)	4.5V, 10V	1V @ 250µA	27nC @ 10V	550pF @ 25V	±20V	-	2.5W (Ta)	30 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)