页 8 - Infineon Technologies 产品 - 晶体管 - UGBT，MOSFET - 单 | 黑森尔电子
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Infineon Technologies 产品 - 晶体管 - UGBT，MOSFET - 单

记录 1,429
页  8/52
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IKFW50N60DH3XKSA1
Infineon Technologies

IGBT TRENCH/FS 600V 53A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 53 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
  • Power - Max: 145 W
  • Switching Energy: 1.22mJ (on), 610µJ (off)
  • Input Type: Standard
  • Gate Charge: 210 nC
  • Td (on/off) @ 25°C: 25ns/212ns
  • Test Condition: 400V, 40A, 8Ohm, 15V
  • Reverse Recovery Time (trr): 64 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-AI
封装: -
Request a Quote
600 V
53 A
160 A
2.3V @ 15V, 40A
145 W
1.22mJ (on), 610µJ (off)
Standard
210 nC
25ns/212ns
400V, 40A, 8Ohm, 15V
64 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-AI
IKZA100N65EH7XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 140A TO247-4

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 140 A
  • Current - Collector Pulsed (Icm): 400 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 100A
  • Power - Max: 429 W
  • Switching Energy: 1.24mJ (on), 1.22mJ (off)
  • Input Type: Standard
  • Gate Charge: 207 nC
  • Td (on/off) @ 25°C: 32ns/240ns
  • Test Condition: 400V, 100A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 62 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4-3
封装: -
库存612
650 V
140 A
400 A
1.65V @ 15V, 100A
429 W
1.24mJ (on), 1.22mJ (off)
Standard
207 nC
32ns/240ns
400V, 100A, 10Ohm, 15V
62 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4-3
IKN06N60RC2ATMA1
Infineon Technologies

IGBT 600V 8A SOT223-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 8 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
  • Power - Max: 7.2 W
  • Switching Energy: 151µJ (on), 104µJ (off)
  • Input Type: Standard
  • Gate Charge: 31 nC
  • Td (on/off) @ 25°C: 8.8ns/174ns
  • Test Condition: 400V, 6A, 49Ohm, 15V
  • Reverse Recovery Time (trr): 42 ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-3
封装: -
库存17,028
600 V
8 A
18 A
2.3V @ 15V, 6A
7.2 W
151µJ (on), 104µJ (off)
Standard
31 nC
8.8ns/174ns
400V, 6A, 49Ohm, 15V
42 ns
-40°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
PG-SOT223-3
IKY120N120CH7XKSA1
Infineon Technologies

IGBT TRENCH FS 1200V 212A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 212 A
  • Current - Collector Pulsed (Icm): 400 A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
  • Power - Max: 721 W
  • Switching Energy: 2.37mJ (on), 2.65mJ (off)
  • Input Type: Standard
  • Gate Charge: 714 nC
  • Td (on/off) @ 25°C: 44ns/359ns
  • Test Condition: 600V, 100A, 4Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4-U10
封装: -
库存555
1200 V
212 A
400 A
2.15V @ 15V, 100A
721 W
2.37mJ (on), 2.65mJ (off)
Standard
714 nC
44ns/359ns
600V, 100A, 4Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4-U10
IKZA50N65EH7XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-4

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A
  • Power - Max: 250 W
  • Switching Energy: 0.44mJ (on), 0.49mJ (off)
  • Input Type: Standard
  • Gate Charge: 103 nC
  • Td (on/off) @ 25°C: 15ns/142ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 54.6 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4-3
封装: -
库存633
650 V
80 A
200 A
1.65V @ 15V, 50A
250 W
0.44mJ (on), 0.49mJ (off)
Standard
103 nC
15ns/142ns
400V, 50A, 10Ohm, 15V
54.6 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4-3
IGC27T120T8QX1SA1
Infineon Technologies

IGBT 1200V 25A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 75 A
  • Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 25A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
1200 V
-
75 A
2.42V @ 15V, 25A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IRGC4067EFX7SA1
Infineon Technologies

IGBT CHIP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 240 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
240 A
-
-
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
IKW15N120CS7XKSA1
Infineon Technologies

IGBT TRENCH FS 1200V 36A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 36 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
  • Power - Max: 176 W
  • Switching Energy: 750µJ (on), 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 95 nC
  • Td (on/off) @ 25°C: 23ns/170ns
  • Test Condition: 600V, 15A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 135 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封装: -
库存12
1200 V
36 A
45 A
2V @ 15V, 15A
176 W
750µJ (on), 700µJ (off)
Standard
95 nC
23ns/170ns
600V, 15A, 10Ohm, 15V
135 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IKFW50N65DH5XKSA1
Infineon Technologies

HOME APPLIANCES 14 PG-HSIP247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 59 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A
  • Power - Max: 124 W
  • Switching Energy: 1.46mJ (on), 630µJ (off)
  • Input Type: Standard
  • Gate Charge: 95 nC
  • Td (on/off) @ 25°C: 23ns/131ns
  • Test Condition: 400V, 50A, 12.2Ohm, 15V
  • Reverse Recovery Time (trr): 68 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-HSIP247-3-2
封装: -
Request a Quote
650 V
59 A
160 A
2.25V @ 15V, 50A
124 W
1.46mJ (on), 630µJ (off)
Standard
95 nC
23ns/131ns
400V, 50A, 12.2Ohm, 15V
68 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-HSIP247-3-2
AIKW75N60CTE8188XKSA1
Infineon Technologies

IGBT 600V TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Power - Max: 428 W
  • Switching Energy: 2mJ (on), 2.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 470 nC
  • Td (on/off) @ 25°C: 33ns/330ns
  • Test Condition: 400V, 75A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 121 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-41
封装: -
Request a Quote
600 V
80 A
225 A
2V @ 15V, 75A
428 W
2mJ (on), 2.5mJ (off)
Standard
470 nC
33ns/330ns
400V, 75A, 5Ohm, 15V
121 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-41
IGC99T120T8RQX7SA1
Infineon Technologies

IGBT 1200V 100A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
1200 V
-
300 A
2.42V @ 15V, 100A
-
-
Standard
-
-
-
-
-
-
-
-
IGC20T60TEX7SA1
Infineon Technologies

IGBT 600V 20A WAFER

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKW20N65ET7XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 40A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 20A
  • Power - Max: 136 W
  • Switching Energy: 360µJ (on), 360µJ (off)
  • Input Type: Standard
  • Gate Charge: 128 nC
  • Td (on/off) @ 25°C: 16ns/210ns
  • Test Condition: 400V, 20A, 12Ohm, 15V
  • Reverse Recovery Time (trr): 70 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封装: -
库存4,308
650 V
40 A
60 A
1.65V @ 15V, 20A
136 W
360µJ (on), 360µJ (off)
Standard
128 nC
16ns/210ns
400V, 20A, 12Ohm, 15V
70 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
SGW25N120FKSA1
Infineon Technologies

IGBT 1200V 46A 313W TO247-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 46 A
  • Current - Collector Pulsed (Icm): 84 A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 25A
  • Power - Max: 313 W
  • Switching Energy: 3.7mJ
  • Input Type: Standard
  • Gate Charge: 225 nC
  • Td (on/off) @ 25°C: 45ns/730ns
  • Test Condition: 800V, 25A, 22Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-1
封装: -
Request a Quote
1200 V
46 A
84 A
3.6V @ 15V, 25A
313 W
3.7mJ
Standard
225 nC
45ns/730ns
800V, 25A, 22Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-1
IKB40N65EH5ATMA1
Infineon Technologies

IGBT TRENCH FS 650V 74A TO263-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 74 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 250 W
  • Switching Energy: 1.1mJ (on), 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 95 nC
  • Td (on/off) @ 25°C: 20ns/157ns
  • Test Condition: 400V, 40A, 15Ohm, 15V
  • Reverse Recovery Time (trr): 78 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
封装: -
库存4,086
650 V
74 A
160 A
2.1V @ 15V, 40A
250 W
1.1mJ (on), 400µJ (off)
Standard
95 nC
20ns/157ns
400V, 40A, 15Ohm, 15V
78 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3
IKFW50N65EH5XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 59A HSIP247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 59 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 124 W
  • Switching Energy: 1.2mJ (on), 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 95 nC
  • Td (on/off) @ 25°C: 20ns/138ns
  • Test Condition: 400V, 40A, 15.1Ohm, 15V
  • Reverse Recovery Time (trr): 52 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-HSIP247-3-2
封装: -
库存315
650 V
59 A
160 A
2.1V @ 15V, 40A
124 W
1.2mJ (on), 400µJ (off)
Standard
95 nC
20ns/138ns
400V, 40A, 15.1Ohm, 15V
52 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-HSIP247-3-2
SIGC10T60EX1SA5
Infineon Technologies

IGBT TRENCH FS 600V 20A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
20 A
60 A
1.9V @ 15V, 20A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
SIGC10T60EX1SA3
Infineon Technologies

IGBT TRENCH FS 600V 20A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
20 A
60 A
1.9V @ 15V, 20A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
SIGC11T60SNCX1SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): 30 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 28ns/198ns
  • Test Condition: 400V, 10A, 25Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
10 A
30 A
2.4V @ 15V, 10A
-
-
Standard
-
28ns/198ns
400V, 10A, 25Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC11T60SNCX1SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): 30 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 28ns/198ns
  • Test Condition: 400V, 10A, 25Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
10 A
30 A
2.4V @ 15V, 10A
-
-
Standard
-
28ns/198ns
400V, 10A, 25Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
63-7000PBF
Infineon Technologies

IGBT 650V COPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SIGC54T60R3EX1SA2
Infineon Technologies

IGBT TRENCH FS 600V 100A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
100 A
300 A
1.85V @ 15V, 100A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
SIGC54T60R3EX1SA3
Infineon Technologies

IGBT TRENCH FS 600V 100A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
100 A
300 A
1.85V @ 15V, 100A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
AUIRGDC0250AKMA1
Infineon Technologies

IGBT 1200V 141A 543W SUPER220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 141 A
  • Current - Collector Pulsed (Icm): 99 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 33A
  • Power - Max: 543 W
  • Switching Energy: 15mJ (off)
  • Input Type: Standard
  • Gate Charge: 151 nC
  • Td (on/off) @ 25°C: -/485ns
  • Test Condition: 600V, 33A, 5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-273AA
  • Supplier Device Package: SUPER-220™ (TO-273AA)
封装: -
库存3,000
1200 V
141 A
99 A
1.8V @ 15V, 33A
543 W
15mJ (off)
Standard
151 nC
-/485ns
600V, 33A, 5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-273AA
SUPER-220™ (TO-273AA)
SIGC39T60EX7SA1
Infineon Technologies

IGBT TRENCH FS 600V 75A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
75 A
225 A
1.85V @ 15V, 75A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IKZA50N120CH7XKSA1
Infineon Technologies

IGBT TRENCH FS 1200V 100A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
  • Power - Max: 398 W
  • Switching Energy: 950µJ (on), 1.42mJ (off)
  • Input Type: Standard
  • Gate Charge: 372 nC
  • Td (on/off) @ 25°C: 39ns/333ns
  • Test Condition: -
  • Reverse Recovery Time (trr): 96 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4-U02
封装: -
库存450
1200 V
100 A
200 A
2.15V @ 15V, 50A
398 W
950µJ (on), 1.42mJ (off)
Standard
372 nC
39ns/333ns
-
96 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4-U02
IRGC35B60PB
Infineon Technologies

IGBT CHIP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
-
-
1.7V @ 15V, 10A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
IHW30N110R5XKSA1
Infineon Technologies

IGBT TRENCH 60A TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 30A
  • Power - Max: 330 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 240 nC
  • Td (on/off) @ 25°C: -/350ns
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封装: -
库存645
-
60 A
90 A
1.85V @ 15V, 30A
330 W
-
Standard
240 nC
-/350ns
-
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3