Infineon Technologies 产品

AIHD10N60RATMA1

Infineon Technologies

IC DISCRETE 600V TO252-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 30A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
• Power - Max: 150W
• Switching Energy: 210µJ (on), 380µJ (off)
• Input Type: Standard
• Gate Charge: 64nC
• Td (on/off) @ 25°C: 14ns/192ns
• Test Condition: 400V, 10A, 23 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

AUIRF4905L

Infineon Technologies

MOSFET P-CH 55V 74A TO-262

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 42A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262

封装: TO-262

IRLB8743PBF

Infineon Technologies

MOSFET N-CH 30V 78A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 54nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 5110pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 140W (Tc)
• Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 40A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封装: TO-220-3

BB 555 E7912

Infineon Technologies

DIODE TUNING 30V 20MA SCD-80

• Capacitance @ Vr, F: 2.3pF @ 28V, 1MHz
• Capacitance Ratio: 9.8
• Capacitance Ratio Condition: C1/C28
• Voltage - Peak Reverse (Max): 30V
• Diode Type: Single
• Q @ Vr, F: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-80
• Supplier Device Package: PG-SCD80-2

封装: SC-80

BAT 60B E6433

Infineon Technologies

DIODE SCHOTTKY 10V 3A SOD323-2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 10V
• Current - Average Rectified (Io): 3A (DC)
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 25µA @ 8V
• Capacitance @ Vr, F: 30pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: PG-SOD323-2
• Operating Temperature - Junction: 150°C (Max)

封装: SC-76, SOD-323

TLE4284DV18NTMA1

Infineon Technologies

IC REG LINEAR 1.8V 1A TO252-3-11

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 40V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 1.6mA
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3-11

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

TLE4675DATMA1

Infineon Technologies

IC REG LINEAR 5V 400MA TO252-5

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 45V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 300mA
• Current - Output: 400mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 80µA ~ 25mA
• PSRR: 65dB (100Hz)
• Control Features: Reset
• Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
• Supplier Device Package: PG-TO252-5

封装: TO-252-5, DPak (4 Leads + Tab), TO-252AD

IR3847MTRPBF

Infineon Technologies

IC REG BUCK ADJ 25A SYNC 33QFN

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 1.5V
• Voltage - Input (Max): 21V
• Voltage - Output (Min/Fixed): 0.6V
• Voltage - Output (Max): 18.06V
• Current - Output: 25A
• Frequency - Switching: 300kHz ~ 1.5MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 33-PowerVFQFN
• Supplier Device Package: PQFN (5x6)

封装: 33-PowerVFQFN

AUIPS7145RTRL

Infineon Technologies

IC SW IPS 1CH HIGH SIDE DPAK-5

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 6 V ~ 60 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2.1A
• Rds On (Typ): 75 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
• Supplier Device Package: D-Pak

封装: TO-252-5, DPak (4 Leads + Tab), TO-252AD

BTS3046SDRATMA1

Infineon Technologies

IC SW SMART LOW SIDE TO252-3-11

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 60V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 3.6A
• Rds On (Typ): 46 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3-11

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

ICE1QS01G

Infineon Technologies

IC PFC CONTROLLER 8DSO

• Mode: -
• Frequency - Switching: -
• Current - Startup: 60µA
• Voltage - Supply: 9 V ~ 20 V
• Operating Temperature: -25°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: P-DSO-8

封装: 8-SOIC (0.154", 3.90mm Width)

IRS2166DSTRPBF

Infineon Technologies

IC CTRL PFC/BALLAST 16-SOIC

• Type: PFC/Ballast Controller
• Frequency: 40kHz ~ 46kHz
• Voltage - Supply: 11.5 V ~ 16.6 V
• Current - Supply: 20mA
• Current - Output Source/Sink: -
• Dimming: No
• Operating Temperature: -25°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

封装: 16-SOIC (0.154", 3.90mm Width)

IR2131S

Infineon Technologies

IC DRIVER BRIDGE 3-PHASE 28-SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 6
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.2V
• Current - Peak Output (Source, Sink): 250mA, 500mA
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 80ns, 40ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 28-SOIC

封装: 28-SOIC (0.295", 7.50mm Width)

IR2104

Infineon Technologies

IC DRIVER HIGH/LOW SIDE 8-DIP

• Driven Configuration: Half-Bridge
• Channel Type: Synchronous
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 3V
• Current - Peak Output (Source, Sink): 210mA, 360mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 100ns, 50ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP

封装: 8-DIP (0.300", 7.62mm)

IR2132JTRPBF

Infineon Technologies

IC DRIVER BRIDGE 3PHASE 44-PLCC

• Driven Configuration: Half-Bridge
• Channel Type: 3-Phase
• Number of Drivers: 6
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.2V
• Current - Peak Output (Source, Sink): 250mA, 500mA
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 80ns, 35ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 44-LCC (J-Lead), 32 Leads
• Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)

封装: 44-LCC (J-Lead), 32 Leads

SAF-XC886CM-8FFA 5V AC

Infineon Technologies

IC MCU 8BIT 32KB FLASH 48TQFP

• Core Processor: XC800
• Core Size: 8-Bit
• Speed: 24MHz
• Connectivity: CAN, SSI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number of I/O: 34
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 1.75K x 8
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 48-TQFP
• Supplier Device Package: 48-TQFP (7x7)

封装: 48-TQFP

TDA5101

Infineon Technologies

TRANSMITTER ASK/FSK P-TSSOP-16

• Frequency: 315MHz
• Applications: Alarm Systems, Communication Systems
• Modulation or Protocol: ASK, FSK
• Data Rate (Max): 20 kbps
• Power - Output: 5dBm
• Current - Transmitting: 7mA
• Data Interface: PCB, Surface Mount
• Antenna Connector: PCB, Surface Mount
• Memory Size: -
• Features: -
• Voltage - Supply: 2.1 V ~ 4 V
• Operating Temperature: -25°C ~ 85°C
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)

封装: 16-TSSOP (0.173", 4.40mm Width)

BSM75GB60DLCHOSA1

Infineon Technologies

IGBT MOD 600V 100A 355W

• IGBT Type: -
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 100 A
• Power - Max: 355 W
• Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 75A
• Current - Collector Cutoff (Max): 500 µA
• Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封装: -

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IDYH50G200C5XKSA1

Infineon Technologies

SIC DISCRETE

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

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T901N35TOFXPSA1

Infineon Technologies

SCR MODULE 3600V 1480A DO200AC

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 3.6 kV
• Current - On State (It (AV)) (Max): 1350 A
• Current - On State (It (RMS)) (Max): 1480 A
• Voltage - Gate Trigger (Vgt) (Max): 2.5 V
• Current - Gate Trigger (Igt) (Max): 350 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Clamp On
• Package / Case: TO-200AC

封装: -

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CY8C4147AZS-S445T

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
• Number of I/O: 54
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

封装: -

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IQE008N03LM5CGSCATMA1

Infineon Technologies

TRENCH <= 40V

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 9-PowerWDFN
• Supplier Device Package: PG-WHTFN-9

封装: -

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FS75R12KT3BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO2B-311

• IGBT Type: Trench Field Stop
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 105 A
• Power - Max: 355 W
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 5.3 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-ECONO2B

封装: -

CG10150AFT

Infineon Technologies

FRAM

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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IPN95R2K0P7ATMA1

Infineon Technologies

MOSFET N-CH 950V 4A SOT223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 950 V
• Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 80µA
• Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 7W (Tc)
• Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT223
• Package / Case: TO-261-4, TO-261AA

封装: -

ISC0804NLSATMA1

Infineon Technologies

MOSFET N-CH 100V 12A/59A TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 59A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 28µA
• Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
• Rds On (Max) @ Id, Vgs: 10.9mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

封装: -

CY9AF112NPMC-G-104E1

Infineon Technologies

IC MCU 32BIT 128KB FLASH 100LQFP

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit Single-Core
• Speed: 40MHz
• Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 83
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x14)

封装: -

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IPP041N04NGHKSA1

Infineon Technologies

MOSFET N-CH 40V 80A TO220-3

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

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