Infineon Technologies 产品

IKD04N60RF

Infineon Technologies

IGBT 600V 8A 75W TO252-3

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 8A
• Current - Collector Pulsed (Icm): 12A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
• Power - Max: 75W
• Switching Energy: 110µJ
• Input Type: Standard
• Gate Charge: 27nC
• Td (on/off) @ 25°C: 12ns/116ns
• Test Condition: 400V, 4A, 43 Ohm, 15V
• Reverse Recovery Time (trr): 34ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

SPB20N60S5ATMA1

Infineon Technologies

MOSFET N-CH 600V 20A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 208W (Tc)
• Rds On (Max) @ Id, Vgs: 190 mOhm @ 13A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BUZ31L E3044A

Infineon Technologies

MOSFET N-CH 200V 13.5A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 95W (Tc)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 7A, 5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

封装: TO-220-3

IRF7842PBF

Infineon Technologies

MOSFET N-CH 40V 18A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 5 mOhm @ 17A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

IRFSL3207ZPBF

Infineon Technologies

MOSFET N-CH 75V 120A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6920pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

IRU1205CLTR

Infineon Technologies

IC REG LIN POS ADJ 300MA SOT23-5

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 10V
• Voltage - Output (Min/Fixed): 1.25V
• Voltage - Output (Max): 9.6V
• Voltage Dropout (Max): 0.4V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-23-5

封装: SC-74A, SOT-753

TLE4473GV55AUMA1

Infineon Technologies

IC REG LINEAR 5V P-DSO-12-6

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 2
• Voltage - Input (Max): 42V
• Voltage - Output (Min/Fixed): 5V, Tracking
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.6V @ 100mA, 0.6V @ 200mA
• Current - Output: 190mA, 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 200µA ~ 20mA
• PSRR: 65dB (100Hz), 65dB (100Hz)
• Control Features: Inhibit, Reset, Watchdog
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
• Supplier Device Package: P-DSO-12-6

封装: 12-BSOP (0.295", 7.50mm Width) Exposed Pad

IPS5451S

Infineon Technologies

IC MOSFET HS PWR SW 35A D2PAK

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 5.5 V ~ 18 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 3.5A
• Rds On (Typ): 19 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
• Supplier Device Package: D2Pak (SMD-220 5-Lead)

封装: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

IR2183SPBF

Infineon Technologies

IC DRIVER HALF BRIDG 600V 8SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.7V
• Current - Peak Output (Source, Sink): 1.9A, 2.3A
• Input Type: Inverting, Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 40ns, 20ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

TLE4906H

Infineon Technologies

MAGNETIC SWITCH UNIPOLAR SC59

• Function: Unipolar Switch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 13.5mT Trip, 5mT Release
• Test Condition: 25°C
• Voltage - Supply: 2.7 V ~ 18 V
• Current - Supply (Max): 6mA
• Current - Output (Max): 20mA
• Output Type: Open Collector
• Features: Temperature Compensated
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SC-59

封装: TO-236-3, SC-59, SOT-23-3

TLE49646MXTMA1

Infineon Technologies

MAGNETIC SWITCH UNIPOLAR SOT23-3

• Function: Unipolar Switch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 5.4mT Trip, 0.9mT Release
• Test Condition: 25°C
• Voltage - Supply: 3 V ~ 32 V
• Current - Supply (Max): 2.5mA
• Current - Output (Max): 25mA
• Output Type: Open Drain
• Features: Temperature Compensated
• Operating Temperature: -40°C ~ 170°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3-15

封装: TO-236-3, SC-59, SOT-23-3

IR3088MPBF

Infineon Technologies

IC CONTROLLER PHASE 20L-MLPQ

• Applications: Processor
• Current - Supply: 10mA
• Voltage - Supply: 8.4 V ~ 14 V
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 20-VFQFN Exposed Pad
• Supplier Device Package: 20-MLPQ (4x4)

封装: 20-VFQFN Exposed Pad

BTS721L1XUMA1

Infineon Technologies

IC SWITCH HI-SIDE 4-CH DSO-20

• Switch Type: General Purpose
• Number of Outputs: 4
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 5 V ~ 34 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2.5A
• Rds On (Typ): 85 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart, Status Flag
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: PG-DSO-20

封装: 20-SOIC (0.295", 7.50mm Width)

BSM20GP60BOSA1

Infineon Technologies

IGBT MODULE 600V 35A 130W

• IGBT Type: -
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 35 A
• Power - Max: 130 W
• Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 10A
• Current - Collector Cutoff (Max): 500 µA
• Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封装: -

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IRF7103QTRPBF

Infineon Technologies

MOSFET 2N-CH 50V 3A 8-SOIC

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 3A
• Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V
• Power - Max: 2.4W
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

封装: -

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CY8C4146AZA-S255

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
• Number of I/O: 54
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 8K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

封装: -

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AIDW12S65C5XKSA1

Infineon Technologies

DIODE SIL CARB 650V 12A TO247-3

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 70 µA @ 650 V
• Capacitance @ Vr, F: 363pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-41
• Operating Temperature - Junction: -40°C ~ 175°C

封装: -

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CY15B104QSN-108SXIT

Infineon Technologies

IC FRAM 4MBIT SPI/QUAD 8SOIC

• Memory Type: Non-Volatile
• Memory Format: FRAM
• Technology: FRAM (Ferroelectric RAM)
• Memory Size: 4Mbit
• Memory Interface: SPI - Quad I/O
• Clock Frequency: 108 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.8V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.209", 5.30mm Width)
• Supplier Device Package: 8-SOIC

封装: -

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IPDD60R075CFD7XTMA1

Infineon Technologies

MOSFET N-CH 600V 40A HDSOP-10

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 4.5V @ 570µA
• Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2102 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 266W (Tc)
• Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HDSOP-10-1
• Package / Case: 10-PowerSOP Module

封装: -

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A2C01180200

Infineon Technologies

IC MCU 32BIT 416PBGA

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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CY15B108QI-20BFXAT

Infineon Technologies

FRAM

• Memory Type: Non-Volatile
• Memory Format: FRAM
• Technology: FRAM (Ferroelectric RAM)
• Memory Size: 8Mbit
• Memory Interface: SPI
• Clock Frequency: 20 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 20 ns
• Voltage - Supply: 1.8V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-UFLGA
• Supplier Device Package: 8-UFLGA (3.28x3.23)

封装: -

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FS300R12OE4PNOSA1

Infineon Technologies

IGBT MOD 1200V 600A 20MW

• IGBT Type: Trench Field Stop
• Configuration: Full Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 600 A
• Power - Max: 20 mW
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
• Current - Collector Cutoff (Max): 3 mA
• Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封装: -

IPB055N08NF2SATMA1

Infineon Technologies

TRENCH 40<-<100V PG-TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 55µA
• Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 107W (Tc)
• Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

FZ2400R12HP4B9HOSA2

Infineon Technologies

IGBT MODULE 1200V 3550A

• IGBT Type: Trench
• Configuration: Single Switch
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 3550 A
• Power - Max: 13500 W
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2400A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封装: -

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CYPD3171-24LQXQT

Infineon Technologies

CCG3PA

• Protocol: USB
• Function: Controller
• Interface: I2C, SPI, UART
• Standards: USB 3.0
• Voltage - Supply: 2.7V, 3V ~ 5.5V, 24.5V
• Current - Supply: 10mA
• Operating Temperature: -40°C ~ 105°C (TA)
• Package / Case: 24-UFQFN Exposed Pad
• Supplier Device Package: 24-QFN (4x4)

封装: -

CYAT81659-64AS48T

Infineon Technologies

PSOC BASED - TRUETOUCH

• Touchscreen: 2 Wire Capacitive
• Resolution (Bits): -
• Interface: I2C, SPI
• Voltage Reference: -
• Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
• Current - Supply: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

封装: -

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TD160N18SOFHPSA1

Infineon Technologies

SCR MODULE 1800V 275A MODULE

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1.8 kV
• Current - On State (It (AV)) (Max): 160 A
• Current - On State (It (RMS)) (Max): 275 A
• Voltage - Gate Trigger (Vgt) (Max): 2.5 V
• Current - Gate Trigger (Igt) (Max): 145 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
• Current - Hold (Ih) (Max): 200 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module

封装: -

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CY8C4149AZQ-S555

Infineon Technologies

IC MCU 32BIT 384KB FLSH 100LQFP

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
• Number of I/O: 54
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

封装: -

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