页 225 - Infineon Technologies 产品

零件编号	制造商	描述	封装	库存
SKB15N60 E8151	Infineon Technologies	IGBT 600V 31A 139W TO263-3 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 62A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Power - Max: 139W Switching Energy: 570µJ Input Type: Standard Gate Charge: 76nC Td (on/off) @ 25°C: 32ns/234ns Test Condition: 400V, 15A, 21 Ohm, 15V Reverse Recovery Time (trr): 279ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存72,000
AUIRFR4292	Infineon Technologies	MOSFET N CH 250V 9.3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 345 mOhm @ 5.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存5,968
IRFR3418TRPBF	Infineon Technologies	MOSFET N-CH 80V 70A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3510pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存7,152
IRLR3715ZTRRPBF	Infineon Technologies	MOSFET N-CH 20V 49A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存21,420
SPD02N80C3BTMA1	Infineon Technologies	MOSFET N-CH 800V 2A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存4,528
IRLR3715TRLPBF	Infineon Technologies	MOSFET N-CH 20V 54A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存7,120
IRF3709ZCSTRR	Infineon Technologies	MOSFET N-CH 30V 87A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存3,584
IRF6626	Infineon Technologies	MOSFET N-CH 30V 16A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 16A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? ST Package / Case: DirectFET? Isometric ST	封装: DirectFET? Isometric ST	库存39,492
IRF7901D1TR	Infineon Technologies	MOSFET 2N-CH 30V 6.2A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.2A Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 16V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存63,732
SIDC08D120H6	Infineon Technologies	DIODE GEN PURP 1.2KV 10A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封装: Die	库存6,864
IRU1015-33CP	Infineon Technologies	IC REG LIN 3.3V 1.5A 2-UTHINPAK Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 7V Voltage - Output (Min/Fixed): 3.3V Voltage - Output (Max): - Voltage Dropout (Max): 1.3V @ 1.5A Current - Output: 1.5A Current - Quiescent (Iq): - Current - Supply (Max): 10mA PSRR: 70dB (120Hz) Control Features: - Protection Features: Over Current, Over Temperature Operating Temperature: 0°C ~ 150°C Mounting Type: Surface Mount Package / Case: 2-Ultra Thin-Pak Supplier Device Package: 2-Ultra Thin-Pak	封装: 2-Ultra Thin-Pak	库存4,576
IFX1963TEVATMA1	Infineon Technologies	IC REG LIN POS ADJ 1.5A TO252-5 Output Configuration: Positive Output Type: Adjustable Number of Regulators: 1 Voltage - Input (Max): 20V Voltage - Output (Min/Fixed): 1.21V Voltage - Output (Max): 19.45V Voltage Dropout (Max): 0.55V @ 1.5A Current - Output: 1.5A Current - Quiescent (Iq): - Current - Supply (Max): 1.5mA ~ 130mA PSRR: 67dB (120Hz) Control Features: Enable Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package: PG-TO252-5	封装: TO-252-5, DPak (4 Leads + Tab), TO-252AD	库存4,896
XE164HM72F80LAAFXUMA1	Infineon Technologies	IC MCU 16BIT 576KB FLASH 100LQFP Core Processor: C166SV2 Core Size: 16-Bit Speed: 80MHz Connectivity: EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Number of I/O: 76 Program Memory Size: 576KB (576K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 50K x 8 Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V Data Converters: A/D 16x10b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 100-LQFP Exposed Pad Supplier Device Package: PG-LQFP-100-8	封装: 100-LQFP Exposed Pad	库存4,608
SLE 66R35 MCC2	Infineon Technologies	IC MEMORY CHIP 1KBYTE MCC2-2 Type: RFID Transponder Frequency: 13.56MHz Standards: ISO 14443 Interface: - Voltage - Supply: - Operating Temperature: - Package / Case: MCC2 Chip Card Module Supplier Device Package: P-MCC2-2-1	封装: MCC2 Chip Card Module	库存3,240
ASP1212-N60NT	Infineon Technologies	IC REGULATOR PG-VQFN-56-901 Applications: Controller, Intel VR11, VR11.1, AMD CPU Voltage - Input: 3.3V Number of Outputs: 1 Voltage - Output: - Operating Temperature: 0°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-VFQFN Exposed Pad Supplier Device Package: 56-VQFN (8x8)	封装: 56-VFQFN Exposed Pad	库存1,080,000
ICE3AR2280JZ2XKLA1	Infineon Technologies	IC CTRLR PWM QUASI-RES DIP7 Output Isolation: - Internal Switch(s): - Voltage - Breakdown: - Topology: - Voltage - Start Up: - Voltage - Supply (Vcc/Vdd): - Duty Cycle: - Frequency - Switching: - Power (Watts): - Fault Protection: - Control Features: - Operating Temperature: - Package / Case: - Supplier Device Package: - Mounting Type: -	封装: -	库存4,512
CHL8326-06CRT	Infineon Technologies	IC REG BUCK 48VQFN Output Type: - Function: - Output Configuration: - Topology: - Number of Outputs: - Output Phases: - Voltage - Supply (Vcc/Vdd): - Frequency - Switching: - Duty Cycle (Max): - Synchronous Rectifier: - Clock Sync: - Serial Interfaces: - Control Features: - Operating Temperature: - Package / Case: - Supplier Device Package: -	封装: -	库存4,464
CY8C4147LDAS543XQLA1	Infineon Technologies	PSOC4 - GENERAL Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Speed: 48MHz Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT Number of I/O: 40 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount, Wettable Flank Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: 48-QFN (7x7)	封装: -	Request a Quote
IPA95R450P7XKSA1	Infineon Technologies	MOSFET N-CH 950V 14A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 360µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	封装: -	Request a Quote
94-2518PBF	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
SIGC156T60NR2CX1SA4	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 200 A Current - Collector Pulsed (Icm): 600 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 180ns/285ns Test Condition: 300V, 200A, 1.5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	Request a Quote
BAR8602ELSE6327XTSA1	Infineon Technologies	RF PIN DIODE > ANTENNA SWITCH Diode Type: - Voltage - Peak Reverse (Max): - Current - Max: - Capacitance @ Vr, F: - Resistance @ If, F: - Power Dissipation (Max): - Operating Temperature: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
TZ400N26KOFHPSA1	Infineon Technologies	SCR MODULE 2.6KV 1050A MODULE Structure: Single Number of SCRs, Diodes: 1 SCR Voltage - Off State: 2.6 kV Current - On State (It (AV)) (Max): 670 A Current - On State (It (RMS)) (Max): 1050 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz Current - Hold (Ih) (Max): 300 mA Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module	封装: -	库存3
IPB020NE7N3GATMA1	Infineon Technologies	MOSFET N-CH 75V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.8V @ 273µA Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	库存20,682
CY8C4127LQSS455XQSA1	Infineon Technologies	PSOC4 - GENERAL Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Speed: 24MHz Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, TRNG, WDT Number of I/O: 54 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16x10b, 20x12b SAR; D/A 2x7/8b Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 56-UFQFN Exposed Pad Supplier Device Package: 56-QFN (7x7)	封装: -	Request a Quote
IPTG044N15NM5ATMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 174A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.6V @ 235µA Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOG-8 Package / Case: 8-PowerSMD, Gull Wing	封装: -	库存1,842
CYT2B94CACR0AZSGST	Infineon Technologies	IC MCU 32BT 2.0625MB FLSH 80LQFP Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Core Size: 32-Bit Dual-Core Speed: 100MHz, 160MHz Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Number of I/O: 63 Program Memory Size: 2.0625MB (2.0625M x 8) Program Memory Type: FLASH EEPROM Size: 128K x 8 RAM Size: 256K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 52x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 80-LQFP Supplier Device Package: 80-LQFP (12x12)	封装: -	Request a Quote
BSG0812NDATMA1	Infineon Technologies	MOSFET N-CH 8TISON FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote

SKB15N60 E8151

Infineon Technologies

IGBT 600V 31A 139W TO263-3

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 31A
Current - Collector Pulsed (Icm): 62A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Power - Max: 139W
Switching Energy: 570µJ
Input Type: Standard
Gate Charge: 76nC
Td (on/off) @ 25°C: 32ns/234ns
Test Condition: 400V, 15A, 21 Ohm, 15V
Reverse Recovery Time (trr): 279ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存72,000

AUIRFR4292

Infineon Technologies

MOSFET N CH 250V 9.3A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 345 mOhm @ 5.6A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存5,968

IRFR3418TRPBF

Infineon Technologies

MOSFET N-CH 80V 70A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3510pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Rds On (Max) @ Id, Vgs: 14 mOhm @ 18A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存7,152

IRLR3715ZTRRPBF

Infineon Technologies

MOSFET N-CH 20V 49A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存21,420

SPD02N80C3BTMA1

Infineon Technologies

MOSFET N-CH 800V 2A TO-252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存4,528

IRLR3715TRLPBF

Infineon Technologies

MOSFET N-CH 20V 54A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存7,120

IRF3709ZCSTRR

Infineon Technologies

MOSFET N-CH 30V 87A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 21A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存3,584

IRF6626

Infineon Technologies

MOSFET N-CH 30V 16A DIRECTFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 16A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET? ST
Package / Case: DirectFET? Isometric ST

封装: DirectFET? Isometric ST

库存39,492

IRF7901D1TR

Infineon Technologies

MOSFET 2N-CH 30V 6.2A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 16V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存63,732

SIDC08D120H6

Infineon Technologies

DIODE GEN PURP 1.2KV 10A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封装: Die

库存6,864

IRU1015-33CP

Infineon Technologies

IC REG LIN 3.3V 1.5A 2-UTHINPAK

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 7V
Voltage - Output (Min/Fixed): 3.3V
Voltage - Output (Max): -
Voltage Dropout (Max): 1.3V @ 1.5A
Current - Output: 1.5A
Current - Quiescent (Iq): -
Current - Supply (Max): 10mA
PSRR: 70dB (120Hz)
Control Features: -
Protection Features: Over Current, Over Temperature
Operating Temperature: 0°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 2-Ultra Thin-Pak
Supplier Device Package: 2-Ultra Thin-Pak

封装: 2-Ultra Thin-Pak

库存4,576

IFX1963TEVATMA1

Infineon Technologies

IC REG LIN POS ADJ 1.5A TO252-5

Output Configuration: Positive
Output Type: Adjustable
Number of Regulators: 1
Voltage - Input (Max): 20V
Voltage - Output (Min/Fixed): 1.21V
Voltage - Output (Max): 19.45V
Voltage Dropout (Max): 0.55V @ 1.5A
Current - Output: 1.5A
Current - Quiescent (Iq): -
Current - Supply (Max): 1.5mA ~ 130mA
PSRR: 67dB (120Hz)
Control Features: Enable
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: PG-TO252-5

封装: TO-252-5, DPak (4 Leads + Tab), TO-252AD

库存4,896

XE164HM72F80LAAFXUMA1

Infineon Technologies

IC MCU 16BIT 576KB FLASH 100LQFP

Core Processor: C166SV2
Core Size: 16-Bit
Speed: 80MHz
Connectivity: EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Number of I/O: 76
Program Memory Size: 576KB (576K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 50K x 8
Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
Data Converters: A/D 16x10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 100-LQFP Exposed Pad
Supplier Device Package: PG-LQFP-100-8

封装: 100-LQFP Exposed Pad

库存4,608

SLE 66R35 MCC2

Infineon Technologies

IC MEMORY CHIP 1KBYTE MCC2-2

Type: RFID Transponder
Frequency: 13.56MHz
Standards: ISO 14443
Interface: -
Voltage - Supply: -
Operating Temperature: -
Package / Case: MCC2 Chip Card Module
Supplier Device Package: P-MCC2-2-1

封装: MCC2 Chip Card Module

库存3,240

ASP1212-N60NT

Infineon Technologies

IC REGULATOR PG-VQFN-56-901

Applications: Controller, Intel VR11, VR11.1, AMD CPU
Voltage - Input: 3.3V
Number of Outputs: 1
Voltage - Output: -
Operating Temperature: 0°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Supplier Device Package: 56-VQFN (8x8)

封装: 56-VFQFN Exposed Pad

库存1,080,000

ICE3AR2280JZ2XKLA1

Infineon Technologies

IC CTRLR PWM QUASI-RES DIP7

Output Isolation: -
Internal Switch(s): -
Voltage - Breakdown: -
Topology: -
Voltage - Start Up: -
Voltage - Supply (Vcc/Vdd): -
Duty Cycle: -
Frequency - Switching: -
Power (Watts): -
Fault Protection: -
Control Features: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -
Mounting Type: -

封装: -

库存4,512

CHL8326-06CRT

Infineon Technologies

IC REG BUCK 48VQFN

Output Type: -
Function: -
Output Configuration: -
Topology: -
Number of Outputs: -
Output Phases: -
Voltage - Supply (Vcc/Vdd): -
Frequency - Switching: -
Duty Cycle (Max): -
Synchronous Rectifier: -
Clock Sync: -
Serial Interfaces: -
Control Features: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,464

CY8C4147LDAS543XQLA1

Infineon Technologies

PSOC4 - GENERAL

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Speed: 48MHz
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT
Number of I/O: 40
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: 48-QFN (7x7)

封装: -

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IPA95R450P7XKSA1

Infineon Technologies

MOSFET N-CH 950V 14A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 950 V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

封装: -

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94-2518PBF

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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SIGC156T60NR2CX1SA4

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 200 A
Current - Collector Pulsed (Icm): 600 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 180ns/285ns
Test Condition: 300V, 200A, 1.5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

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BAR8602ELSE6327XTSA1

Infineon Technologies

RF PIN DIODE > ANTENNA SWITCH

Diode Type: -
Voltage - Peak Reverse (Max): -
Current - Max: -
Capacitance @ Vr, F: -
Resistance @ If, F: -
Power Dissipation (Max): -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

封装: -

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TZ400N26KOFHPSA1

Infineon Technologies

SCR MODULE 2.6KV 1050A MODULE

Structure: Single
Number of SCRs, Diodes: 1 SCR
Voltage - Off State: 2.6 kV
Current - On State (It (AV)) (Max): 670 A
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
Current - Hold (Ih) (Max): 300 mA
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module

封装: -

库存3

IPB020NE7N3GATMA1

Infineon Technologies

MOSFET N-CH 75V 120A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.8V @ 273µA
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

库存20,682

CY8C4127LQSS455XQSA1

Infineon Technologies

PSOC4 - GENERAL

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Speed: 24MHz
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, TRNG, WDT
Number of I/O: 54
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16x10b, 20x12b SAR; D/A 2x7/8b
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-UFQFN Exposed Pad
Supplier Device Package: 56-QFN (7x7)

封装: -

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IPTG044N15NM5ATMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 174A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 4.6V @ 235µA
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOG-8
Package / Case: 8-PowerSMD, Gull Wing

封装: -

库存1,842

CYT2B94CACR0AZSGST

Infineon Technologies

IC MCU 32BT 2.0625MB FLSH 80LQFP

Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Core Size: 32-Bit Dual-Core
Speed: 100MHz, 160MHz
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Number of I/O: 63
Program Memory Size: 2.0625MB (2.0625M x 8)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
RAM Size: 256K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 52x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Supplier Device Package: 80-LQFP (12x12)

封装: -

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BSG0812NDATMA1

Infineon Technologies

MOSFET N-CH 8TISON

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote