Infineon Technologies 产品

IRG4BC15MDPBF

Infineon Technologies

IGBT 600V 14A 49W TO220AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 14A
• Current - Collector Pulsed (Icm): 28A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8.6A
• Power - Max: 49W
• Switching Energy: 320µJ (on), 1.93mJ (off)
• Input Type: Standard
• Gate Charge: 46nC
• Td (on/off) @ 25°C: 21ns/540ns
• Test Condition: 480V, 8.6A, 75 Ohm, 15V
• Reverse Recovery Time (trr): 28ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封装: TO-220-3

IRG4RC20F

Infineon Technologies

IGBT 600V 22A 66W DPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 22A
• Current - Collector Pulsed (Icm): 44A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
• Power - Max: 66W
• Switching Energy: 190µJ (on), 920µJ (off)
• Input Type: Standard
• Gate Charge: 27nC
• Td (on/off) @ 25°C: 26ns/194ns
• Test Condition: 480V, 12A, 50 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IGW40N65H5FKSA1

Infineon Technologies

IGBT 650V 74A 255W PG-TO247-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 74A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
• Power - Max: 255W
• Switching Energy: 390µJ (on), 120µJ (off)
• Input Type: Standard
• Gate Charge: 95nC
• Td (on/off) @ 25°C: 22ns/165ns
• Test Condition: 400V, 20A, 15 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

封装: TO-247-3

FS820R08A6P2BBPSA1

Infineon Technologies

MOD HYBRID PACK DRIVE HYBRIDD-1

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

IPA50R500CE

Infineon Technologies

MOSFET N-CH 500V 7.6A PG-TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 13V
• Vgs(th) (Max) @ Id: 3.5V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 433pF @ 100V
• Vgs (Max): ±20V
• FET Feature: Super Junction
• Power Dissipation (Max): 28W (Tc)
• Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.3A, 13V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220FP
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

IPP100N06S3L-03

Infineon Technologies

MOSFET N-CH 55V 100A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 230µA
• Gate Charge (Qg) (Max) @ Vgs: 550nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 26240pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

封装: TO-220-3

IRF7807ATR

Infineon Technologies

MOSFET N-CH 30V 8.3A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

IRF7207

Infineon Technologies

MOSFET P-CH 20V 5.4A 8-SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
• Vgs(th) (Max) @ Id: 700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Tc)
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.4A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

BC857CWH6433XTMA1

Infineon Technologies

TRANS PNP 45V 0.1A SOT323

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 250MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

封装: SC-70, SOT-323

BCR 133T E6327

Infineon Technologies

TRANS PREBIAS NPN 250MW SC75

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 130MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: PG-SC-75

封装: SC-75, SOT-416

BFR 182W E6327

Infineon Technologies

TRANSISTOR NPN RF 12V SOT-323

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
• Gain: 19dB
• Power - Max: 250mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
• Current - Collector (Ic) (Max): 35mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

封装: SC-70, SOT-323

BAV170E6359HTMA1

Infineon Technologies

DIODE GP 80V 100MA SOT23

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 100mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 50mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 1.5µs
• Current - Reverse Leakage @ Vr: 5nA @ 75V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

封装: TO-236-3, SC-59, SOT-23-3

TLE82453SAAUMA1

Infineon Technologies

IC SOLENOID DRIVER 3CH 36DSO

• Switch Type: Relay, Solenoid Driver
• Number of Outputs: 3
• Ratio - Input:Output: 1:3
• Output Configuration: High Side or Low Side
• Output Type: N-Channel
• Interface: SPI
• Voltage - Load: 5.5 V ~ 40 V
• Voltage - Supply (Vcc/Vdd): 4.75 V ~ 5.25 V
• Current - Output (Max): 1.6A
• Rds On (Typ): 250 mOhm (Max)
• Input Type: -
• Features: Slew Rate Controlled
• Fault Protection: Current Limiting (Fixed), Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: -
• Supplier Device Package: PG-DSO-36

封装: -

XE164F72F66LACFXQMA1

Infineon Technologies

IC MCU 16BIT 576KB FLASH 100LQFP

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 66MHz
• Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 75
• Program Memory Size: 576KB (576K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 50K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP Exposed Pad
• Supplier Device Package: 100-LQFP (14x14)

封装: 100-LQFP Exposed Pad

SAK-TC1762-128F80HL AC

Infineon Technologies

IC MCU 32BIT 1MB FLASH 176LQFP

• Core Processor: TriCore?
• Core Size: 32-Bit
• Speed: 80MHz
• Connectivity: ASC, CAN, MLI, MSC, SSC
• Peripherals: DMA, POR, WDT
• Number of I/O: 81
• Program Memory Size: 1MB (1M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 52K x 8
• Voltage - Supply (Vcc/Vdd): 1.42 V ~ 1.58 V
• Data Converters: A/D 2x10b; A/D 32x8b,10b,12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 176-LQFP
• Supplier Device Package: 176-LQFP (24x24)

封装: 176-LQFP

TLE9834QXXUMA2

Infineon Technologies

EMBEDDED POWER

• Applications: Automotive
• Core Processor: XC800
• Program Memory Type: FLASH (64 kB)
• Controller Series: -
• RAM Size: 3.25K x 8
• Interface: LIN, SSI, UART
• Number of I/O: 11
• Voltage - Supply: 3 V ~ 27 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48-29

封装: 48-VFQFN Exposed Pad

CG7705AA

Infineon Technologies

SEMICONDUCTOR OTHER

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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IDC75S120C5X7SA1

Infineon Technologies

SIC CHIP

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

封装: -

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IPA60R360CFD7XKSA1

Infineon Technologies

MOSFET N-CH 650V 5A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 140µA
• Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 679 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 23W (Tc)
• Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220 Full Pack
• Package / Case: TO-220-3 Full Pack

封装: -

PSB4451RV1-2

Infineon Technologies

ANIC ANALOG NETWORK INTERFACE CI

• Function: -
• Interface: -
• Number of Circuits: -
• Voltage - Supply: -
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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BTN9960LVAUMA1

Infineon Technologies

DC_MOTOR_CONTROL

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge
• Interface: PWM
• Technology: DMOS
• Step Resolution: -
• Applications: General Purpose
• Current - Output: -
• Voltage - Supply: 4.5V ~ 40V
• Voltage - Load: 4.5V ~ 40V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 7-PowerSFN
• Supplier Device Package: PG-HSOF-7-1

封装: -

FF400R12KE3B2HOSA1

Infineon Technologies

IGBT MOD 1200V 580A 2000W

• IGBT Type: Trench Field Stop
• Configuration: 2 Independent
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 580 A
• Power - Max: 2000 W
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封装: -

IMZA75R090M1HXKSA1

Infineon Technologies

SILICON CARBIDE MOSFET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-4
• Package / Case: TO-247-4

封装: -

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CG8536AAT

Infineon Technologies

IC PSOC3

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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CYAT81682-128AS88Z

Infineon Technologies

PSOC BASED - TRUETOUCH

• Touchscreen: 2 Wire Capacitive
• Resolution (Bits): -
• Interface: I2C, SPI
• Voltage Reference: -
• Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
• Current - Supply: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 128-LQFP
• Supplier Device Package: 128-TQFP (14x20)

封装: -

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CY8C4746LQS-S263T

Infineon Technologies

IC MCU 32BIT 64KB FLASH 40QFN

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: FIFO, I2C, IrDA, LINbus, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
• Number of I/O: 34
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 8K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 40-UFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

封装: -

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S6J334DJEDSE20000

Infineon Technologies

TRAVEO-40NM

• Core Processor: ARM® Cortex®-R5F
• Core Size: 32-Bit
• Speed: 240MHz
• Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
• Peripherals: DMA, I2S, LVD, POR, PWM, WDT
• Number of I/O: 150
• Program Memory Size: 3.0625MB (3.0625M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 112K x 8
• RAM Size: 544K x 8
• Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
• Data Converters: A/D 48x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 176-LQFP Exposed Pad
• Supplier Device Package: 176-TEQFP (24x24)

封装: -

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FS75R12W2T7BPSA1

Infineon Technologies

LOW POWER EASY AG-EASY2B-711

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 65 A
• Power - Max: 20 mW
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): 13 µA
• Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-EASY2B

封装: -