Infineon Technologies 产品

IRFR13N20DCPBF

Infineon Technologies

MOSFET N-CH 200V 13A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 235 mOhm @ 8A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

AUIRFSL4310

Infineon Technologies

MOSFET N-CH 100V 75A TO262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7670pF @ 50V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

IRF540ZPBF

Infineon Technologies

MOSFET N-CH 100V 36A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 92W (Tc)
• Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 22A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封装: TO-220-3

IRF6636TRPBF

Infineon Technologies

MOSFET N-CH 20V 18A DIRECTFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 81A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.45V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
• Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 18A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? ST
• Package / Case: DirectFET? Isometric ST

封装: DirectFET? Isometric ST

IRFB7430PBF

Infineon Technologies

MOSFET N CH 40V 195A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.9V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 460nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 14240pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 375W (Tc)
• Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封装: TO-220-3

PTFA092201FV4XWSA1

Infineon Technologies

IC FET RF LDMOS 220W H-37260-2

• Transistor Type: LDMOS
• Frequency: 960MHz
• Gain: 18.5dB
• Voltage - Test: 30V
• Current Rating: 10µA
• Noise Figure: -
• Current - Test: 1.85A
• Power - Output: 220W
• Voltage - Rated: 65V
• Package / Case: 2-Flatpack, Fin Leads, Flanged
• Supplier Device Package: H-37260-2

封装: 2-Flatpack, Fin Leads, Flanged

PTFB090901EAV2R250XTMA1

Infineon Technologies

IC AMP RF LDMOS

• Transistor Type: -
• Frequency: -
• Gain: -
• Voltage - Test: -
• Current Rating: -
• Noise Figure: -
• Current - Test: -
• Power - Output: -
• Voltage - Rated: -
• Package / Case: -
• Supplier Device Package: -

封装: -

BTS7904BATMA1

Infineon Technologies

MOSFET N/P-CH 55V/30V 40A TO263

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 55V, 30V
• Current - Continuous Drain (Id) @ 25°C: 40A
• Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 40µA
• Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
• Power - Max: 69W, 96W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
• Supplier Device Package: PG-TO263-5

封装: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA

IRF5852TR

Infineon Technologies

MOSFET 2N-CH 20V 2.7A 6-TSOP

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.7A
• Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V
• Vgs(th) (Max) @ Id: 1.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
• Power - Max: 960mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package: 6-TSOP

封装: SOT-23-6 Thin, TSOT-23-6

BCV49H6327XTSA1

Infineon Technologies

TRANSISTOR AF SOT89-4

• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 1W
• Frequency - Transition: 150MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

封装: TO-243AA

TLE7230GSFUMA1

Infineon Technologies

IC DRIVER SPI 8CH LS 24-SSOP

• Switch Type: General Purpose
• Number of Outputs: 8
• Ratio - Input:Output: 1:8
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: SPI
• Voltage - Load: 4.5 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Current - Output (Max): 300mA
• Rds On (Typ): 800 mOhm
• Input Type: -
• Features: -
• Fault Protection: Open Load Detect, Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 24-SSOP (0.154", 3.90mm Width)
• Supplier Device Package: PG-SSOP-24

封装: 24-SSOP (0.154", 3.90mm Width)

TLE7234SEXUMA1

Infineon Technologies

IC DRIVER SPI RELAY CTRL DSO20

• Switch Type: General Purpose
• Number of Outputs: 8
• Ratio - Input:Output: 3:8
• Output Configuration: High Side or Low Side
• Output Type: N-Channel
• Interface: SPI
• Voltage - Load: 9 V ~ 16 V
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Current - Output (Max): 140mA, 280mA
• Rds On (Typ): 850 mOhm, 1.6 Ohm
• Input Type: -
• Features: -
• Fault Protection: Open Load Detect, Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: PG-DSO-20-45

封装: 20-SOIC (0.295", 7.50mm Width)

PEF 22624 E V2.2-G

Infineon Technologies

IC DSL FRONT-END 2.2V 324-LBGA

• Function: Symmetrical DSL Front End (SDFE)
• Interface: HDLC, Serial, TDM
• Number of Circuits: 2
• Voltage - Supply: -
• Current - Supply: -
• Power (Watts): 500mW
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 324-LBGA
• Supplier Device Package: PG-LBGA-324-2

封装: 324-LBGA

XMC4402F100F256ABXQMA1

Infineon Technologies

IC MCU 32BIT 256KB FLASH 100LQFP

• Core Processor: ARM? Cortex?-M4
• Core Size: 32-Bit
• Speed: 120MHz
• Connectivity: CAN, I2C, LIN, SPI, UART/USART, USB
• Peripherals: DMA, I2S, LED, POR, PWM, WDT
• Number of I/O: 55
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 80K x 8
• Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
• Data Converters: A/D 24x12b, D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-100-11

封装: 100-LQFP Exposed Pad

TC299TP128F300SBBKXUMA1

Infineon Technologies

IC MCU 32BIT 8MB FLASH 516LFBGA

• Core Processor: TriCore?
• Core Size: 32-Bit
• Speed: 300MHz
• Connectivity: ASC, CAN, Ethernet, FlexRay, HSSL, I2C, LIN, MSC, PSI5, QSPI, SENT
• Peripherals: DMA, WDT
• Number of I/O: 263
• Program Memory Size: 8MB (8M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 384K x 8
• RAM Size: 728K x 8
• Voltage - Supply (Vcc/Vdd): 3.3V, 5V
• Data Converters: A/D 84x12b, 10 x Sigma-Delta
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

XC836M1FRIABFXUMA1

Infineon Technologies

IC MCU 8BIT 4KB FLASH 28TSSOP

• Core Processor: XC800
• Core Size: 8-Bit
• Speed: 24MHz
• Connectivity: I2C, SSC, UART/USART
• Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
• Number of I/O: 23
• Program Memory Size: 4KB (4K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 512 x 8
• Voltage - Supply (Vcc/Vdd): 2.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 28-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 28-TSSOP

封装: 28-TSSOP (0.173", 4.40mm Width)

SLB9665XQ20FW560XUMA2

Infineon Technologies

SECURITY IC'S/AUTHENTICATION IC'

• Applications: Embedded Security Trusted Computing
• Core Processor: 16-Bit
• Program Memory Type: -
• Controller Series: -
• RAM Size: -
• Interface: LPC
• Number of I/O: 1
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 32-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-32-13

封装: 32-VFQFN Exposed Pad

TLE42994GMV33XUMA3

Infineon Technologies

IC REG LDO 3.3V 0.15A 14DSO

• Output Configuration: -
• Output Type: -
• Number of Regulators: -
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: -
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

S29GL512T11FHB023

Infineon Technologies

IC FLASH 512MBIT PARALLEL 64FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 512Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 60ns
• Access Time: 110 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LBGA
• Supplier Device Package: 64-FBGA (13x11)

封装: -

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CY8C6244AZQ-S4D93

Infineon Technologies

IC MCU 32BIT 256KB FLASH 80TQFP

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 150MHz
• Connectivity: CANbus, FIFO, I2C, LINbus, QSPI, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
• Number of I/O: 62
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 128K x 8
• Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
• Data Converters: A/D 16x12b SAR, 10b Sigma-Delta; D/A 2x7/8b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 80-LQFP
• Supplier Device Package: 80-TQFP (12x12)

封装: -

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CY9BF466NPMC-G-MNE2

Infineon Technologies

IC MCU 32BIT 544KB FLASH 100LQFP

• Core Processor: ARM® Cortex®-M4F
• Core Size: 32-Bit Single-Core
• Speed: 160MHz
• Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 80
• Program Memory Size: 544KB (544K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 64K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 24x12b; D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x14)

封装: -

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IPAN70R900P7SXKSA1

Infineon Technologies

MOSFET N-CH 700V 6A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 700 V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 60µA
• Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 17.9W (Tc)
• Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-FP
• Package / Case: TO-220-3 Full Pack

封装: -

IMZA65R040M2HXKSA1

Infineon Technologies

SILICON CARBIDE MOSFET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

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BA895E6327

Infineon Technologies

PIN DIODE

• Diode Type: PIN - Single
• Voltage - Peak Reverse (Max): 50V
• Current - Max: 50 mA
• Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
• Resistance @ If, F: 7Ohm @ 10mA, 100MHz
• Power Dissipation (Max): -
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-80
• Supplier Device Package: SCD-80

封装: -

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TD305N16KOFHPSA1

Infineon Technologies

SCR MODULE 1600V 520A MODULE

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1.6 kV
• Current - On State (It (AV)) (Max): 305 A
• Current - On State (It (RMS)) (Max): 520 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 200 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 10500A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 130°C
• Mounting Type: Chassis Mount
• Package / Case: Module

封装: -

SIGC61T60NCX1SA3

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 75 A
• Current - Collector Pulsed (Icm): 225 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 65ns/170ns
• Test Condition: 300V, 75A, 3Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封装: -

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ETD420N22P60HPSA1

Infineon Technologies

THYR / DIODE MODULE DK

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 2.2 kV
• Current - On State (It (AV)) (Max): 427 A
• Current - On State (It (RMS)) (Max): 700 A
• Voltage - Gate Trigger (Vgt) (Max): 2.2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 13400A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 135°C (TC)
• Mounting Type: Chassis Mount
• Package / Case: Module

封装: -

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CYAT81688-100AS61T

Infineon Technologies

PSOC BASED - TRUETOUCH

• Touchscreen: 2 Wire Capacitive
• Resolution (Bits): -
• Interface: I2C, SPI
• Voltage Reference: -
• Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
• Current - Supply: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

封装: -