Infineon Technologies 产品

IRG4RC20FPBF

Infineon Technologies

IGBT 600V 22A 66W DPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 22A
• Current - Collector Pulsed (Icm): 44A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
• Power - Max: 66W
• Switching Energy: 190µJ (on), 920µJ (off)
• Input Type: Standard
• Gate Charge: 27nC
• Td (on/off) @ 25°C: 26ns/194ns
• Test Condition: 480V, 12A, 50 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

FS215R04A1E3DBOMA1

Infineon Technologies

IGBT MODULES

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

IPB80N06S2L-H5

Infineon Technologies

MOSFET N-CH 55V 80A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BSP316PL6327HTSA1

Infineon Technologies

MOSFET P-CH 100V 0.68A SOT-223

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 170µA
• Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta)
• Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 680mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT223-4
• Package / Case: TO-261-4, TO-261AA

封装: TO-261-4, TO-261AA

IRF2204LPBF

Infineon Technologies

MOSFET N-CH 40V 170A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5890pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 130A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

IPU135N08N3 G

Infineon Technologies

MOSFET N-CH 80V 50A TO251-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 33µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 40V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO251-3
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封装: TO-251-3 Short Leads, IPak, TO-251AA

BSP298H6327XUSA1

Infineon Technologies

MOSFET N-CH 400V 500MA SOT-223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 400V
• Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta)
• Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: -
• Supplier Device Package: PG-SOT223-4
• Package / Case: TO-261-4, TO-261AA

封装: TO-261-4, TO-261AA

BSS126H6906XTSA1

Infineon Technologies

MOSFET N-CH 600V 0.021A SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
• Vgs(th) (Max) @ Id: 1.6V @ 8µA
• Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Depletion Mode
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

PTFB090901FAV2R250XTMA1

Infineon Technologies

IC AMP RF LDMOS

• Transistor Type: -
• Frequency: -
• Gain: -
• Voltage - Test: -
• Current Rating: -
• Noise Figure: -
• Current - Test: -
• Power - Output: -
• Voltage - Rated: -
• Package / Case: -
• Supplier Device Package: -

封装: -

AUIR3316S

Infineon Technologies

IC SW LOW EMI CURR SENSE D2PAK-5

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 6 V ~ 26 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 23A
• Rds On (Typ): 5.5 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Adjustable), Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
• Supplier Device Package: D2PAK

封装: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

AUIPS1041LTR

Infineon Technologies

IC SW IPS 1CH LOW SIDE SOT223

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 6 V ~ 28 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.5A
• Rds On (Typ): 80 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

封装: TO-261-4, TO-261AA

TLD55411QVXUMA1

Infineon Technologies

IC LED DRVR DCDC CTRLR 48VQFN

• Type: DC DC Controller
• Topology: Half-Bridge
• Internal Switch(s): No
• Number of Outputs: 4
• Voltage - Supply (Min): 4.5V
• Voltage - Supply (Max): 40V
• Voltage - Output: 55V
• Current - Output / Channel: -
• Frequency: 200kHz ~ 700kHz
• Dimming: Analog, PWM
• Applications: Automotive
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48-31

封装: 48-VFQFN Exposed Pad

ICE1HS01GHUMA1

Infineon Technologies

IC CTRLR RESONATE MODE 8DSO

• Output Isolation: Isolated
• Internal Switch(s): No
• Voltage - Breakdown: -
• Topology: Half-Bridge
• Voltage - Start Up: 12V
• Voltage - Supply (Vcc/Vdd): 10.2 V ~ 18 V
• Duty Cycle: 50%
• Frequency - Switching: 50kHz ~ 609kHz
• Power (Watts): -
• Fault Protection: Current Limiting, Open Loop, Over Load, Over Voltage
• Control Features: Frequency Control
• Operating Temperature: -25°C ~ 125°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8
• Mounting Type: Surface Mount

封装: 8-SOIC (0.154", 3.90mm Width)

ICE3B0365JGXUMA1

Infineon Technologies

IC OFFLINE CTRLR SMPS OTP DSO16

• Output Isolation: Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 650V
• Topology: Flyback
• Voltage - Start Up: 18V
• Voltage - Supply (Vcc/Vdd): 10.3 V ~ 26 V
• Duty Cycle: 75%
• Frequency - Switching: 67kHz
• Power (Watts): 22W
• Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
• Control Features: Soft Start
• Operating Temperature: -25°C ~ 130°C (TJ)
• Package / Case: 16-SOIC (0.154", 3.90mm Width) 12 leads
• Supplier Device Package: PG-DSO-12
• Mounting Type: Surface Mount

封装: 16-SOIC (0.154", 3.90mm Width) 12 leads

SAX-XC878-16FFA 5V AC

Infineon Technologies

IC MCU 8BIT 64KB FLASH 64LQFP

• Core Processor: XC800
• Core Size: 8-Bit
• Speed: 27MHz
• Connectivity: SPI, SSI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number of I/O: 40
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 3.25K x 8
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: -
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

封装: 64-LQFP

BGT24MTR12E6327XUMA1

Infineon Technologies

IC MMIC 24GHZ TWIN IQ RX 32QFN

• Function: Transceiver
• Frequency: 24GHz ~ 24.25GHz
• RF Type: General Purpose
• Secondary Attributes: -
• Package / Case: 32-VFQFN Exposed Pad
• Supplier Device Package: 32-VQFN (5.5x4.5)

封装: 32-VFQFN Exposed Pad

PVT312S-TPBF

Infineon Technologies

IC RELAY PHOTOVO 250V 190MA 6SMD

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 10 Ohm
• Load Current: 190mA
• Voltage - Input: 1.2VDC
• Voltage - Load: 0 ~ 250 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 6-SMD (0.300", 7.62mm)
• Supplier Device Package: 6-SMT
• Relay Type: Relay

封装: 6-SMD (0.300", 7.62mm)

ACCESSORY34092NOSA1

Infineon Technologies

ACCESSORY IGBT MODULEE

• Type: -
• Configuration: -
• Current: -
• Voltage: -
• Voltage - Isolation: -
• Package / Case: -

封装: -

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D950N22TB01XPSA1

Infineon Technologies

DIODE GEN PURP 2.2KV 1024A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2200 V
• Current - Average Rectified (Io): 1024A
• Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 650 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AA, APuk
• Supplier Device Package: -
• Operating Temperature - Junction: 180°C

封装: -

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IM535U6DXKMA1

Infineon Technologies

IM535U6DXKMA1

• Type: IGBT
• Configuration: 3 Phase
• Current: 30 A
• Voltage: 600 V
• Voltage - Isolation: 2000Vrms
• Package / Case: -

封装: -

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D931SH65TXPSA1

Infineon Technologies

DIODE GEN PURP 6.5KV 1220A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 6500 V
• Current - Average Rectified (Io): 1220A
• Voltage - Forward (Vf) (Max) @ If: 5.6 V @ 2500 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 mA @ 6500 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AD
• Supplier Device Package: -
• Operating Temperature - Junction: 0°C ~ 140°C

封装: -

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CY8C4045LQA-S411

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
• Number of I/O: 19
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 4K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b; D/A 1x7/1x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-UFQFN Exposed Pad
• Supplier Device Package: 24-QFN (4x4)

封装: -

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D121N12BXPSA1

Infineon Technologies

DIODE GEN PURP 1.2KV 230A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 230A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-205AA, DO-8, Stud
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 180°C

封装: -

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CY9AF116NAPMC-GE1

Infineon Technologies

MULTI-MARKET MCUS

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit
• Speed: 40MHz
• Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 83
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x14)

封装: -

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IKZA50N65SS5XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-4

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 200 A
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
• Power - Max: 274 W
• Switching Energy: 230µJ (on), 520µJ (off)
• Input Type: Standard
• Gate Charge: 110 nC
• Td (on/off) @ 25°C: 19ns/140ns
• Test Condition: 400V, 50A, 9Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-4
• Supplier Device Package: PG-TO247-4-3

封装: -

CY8C6245AZI-S3D12

Infineon Technologies

IC MCU 32BIT 512KB FLASH 100TQFP

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 150MHz
• Connectivity: FIFO, I2C, IrDA, LINbus, MMC/SD/SDIO, QSPI, SmartCard, SPI, UART/USART, USB
• Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA, LCD, LVD, POR, PWM, SmartSense, WDT
• Number of I/O: 64
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 256K x 8
• Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
• Data Converters: A/D 16x12b SAR, 10b Sigma-Delta; D/A 2x7/8b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

封装: -

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CY9BF366KPMC-G-JNK1E2

Infineon Technologies

MULTI-MARKET MCUS

• Core Processor: ARM® Cortex®-M4F
• Core Size: 32-Bit
• Speed: 160MHz
• Connectivity: CSIO, I2C, LINbus, UART/USART, USB
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 33
• Program Memory Size: 544KB (544K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 64K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 8x12b SAR; D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-LQFP
• Supplier Device Package: 48-LQFP (7x7)

封装: -

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SPI11N60S5

Infineon Technologies

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3-1
• Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA

封装: -

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