ISSI, Integrated Silicon Solution Inc 产品

IS45VM16800E-75BLA2-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 54BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile
• Memory Size: 128Mb (8M x 16)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TFBGA
• Supplier Device Package: 54-TFBGA (8x8)

封装: 54-TFBGA

IS66WVE2M16DBLL-70BLI

ISSI, Integrated Silicon Solution Inc

IC PSRAM 32MBIT 70NS 48BGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 32Mb (2M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFBGA
• Supplier Device Package: 48-TFBGA (6x8)

封装: 48-TFBGA

IS49NLS18320-33BL

ISSI, Integrated Silicon Solution Inc

IC DRAM 576MBIT 300MHZ 144BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: DRAM
• Memory Size: 576Mb (32M x 18)
• Memory Interface: Parallel
• Clock Frequency: 300MHz
• Write Cycle Time - Word, Page: -
• Access Time: 20ns
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 144-TFBGA
• Supplier Device Package: 144-FCBGA (11x18.5)

封装: 144-TFBGA

IS45S16160D-6BLA1-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 54BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mb (16M x 16)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TFBGA
• Supplier Device Package: 54-TFBGA (8x13)

封装: 54-TFBGA

IS42S32200E-6TLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 166MHZ 86TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 64Mb (2M x 32)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.5ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 86-TFSOP (0.400", 10.16mm Width)
• Supplier Device Package: 86-TSOP II

封装: 86-TFSOP (0.400", 10.16mm Width)

IS42S32200C1-6TLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 166MHZ 86TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 64Mb (2M x 32)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.5ns
• Voltage - Supply: 3.15 V ~ 3.45 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 86-TFSOP (0.400", 10.16mm Width)
• Supplier Device Package: 86-TSOP II

封装: 86-TFSOP (0.400", 10.16mm Width)

IS61LV5128AL-10BI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 10NS 36MINIBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 4Mb (512K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 10ns
• Access Time: 10ns
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 36-TFBGA
• Supplier Device Package: 36-miniBGA (8x10)

封装: 36-TFBGA

IS42S32800B-6T-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 86TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mb (8M x 32)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.5ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 86-TFSOP (0.400", 10.16mm Width)
• Supplier Device Package: 86-TSOP II

封装: 86-TFSOP (0.400", 10.16mm Width)

IS42S16160B-6TL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 54TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mb (16M x 16)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 54-TSOP II

封装: 54-TSOP (0.400", 10.16mm Width)

IS41LV16105B-60KL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 16MBIT 60NS 42SOJ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: DRAM - FP
• Memory Size: 16Mb (1M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 30ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 42-BSOJ (0.400", 10.16mm)
• Supplier Device Package: 42-SOJ

封装: 42-BSOJ (0.400", 10.16mm)

IS45S16320D-7TLA1

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 143MHZ 54TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 512Mb (32M x 16)
• Memory Interface: Parallel
• Clock Frequency: 143MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 54-TSOP II

封装: 54-TSOP (0.400", 10.16mm Width)

IS42S16800F-5TLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 200MHZ 54TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 128Mb (8M x 16)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 54-TSOP II

封装: 54-TSOP (0.400", 10.16mm Width)

IS43DR86400C-3DBL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 333MHZ 60BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR2
• Memory Size: 512Mb (64M x 8)
• Memory Interface: Parallel
• Clock Frequency: 333MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 450ps
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 60-TFBGA
• Supplier Device Package: 60-TWBGA (10.5x8)

封装: 60-TFBGA

IS42VM32200M-75BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 133MHZ 90BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile
• Memory Size: 64Mb (2M x 32)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: -
• Access Time: 6ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-TFBGA
• Supplier Device Package: 90-TFBGA (8x13)

封装: 90-TFBGA

IS49NLS93200-33WBLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 288M PARALLEL 300MHZ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: DRAM
• Memory Size: 288Mb (32M x 9)
• Memory Interface: Parallel
• Clock Frequency: 300MHz
• Write Cycle Time - Word, Page: -
• Access Time: 20ns
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 144-TBGA
• Supplier Device Package: 144-TWBGA (11x18.5)

封装: 144-TBGA

IS61NLF51218B-7.5TQLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 9M PARALLEL 117MHZ

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 9Mb (512K x 18)
• Memory Interface: Parallel
• Clock Frequency: 117MHz
• Write Cycle Time - Word, Page: -
• Access Time: 7.5ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x20)

封装: 100-LQFP

IS43LD16320A-25BLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 512M PARALLEL 400MHZ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR2-S4
• Memory Size: 512Mb (32M x 16)
• Memory Interface: Parallel
• Clock Frequency: 400MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 134-TFBGA
• Supplier Device Package: 134-TFBGA (10x11.5)

封装: 134-TFBGA

IS25LP512M-RGLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 512M SPI 24TFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 512Mb (64M x 8)
• Memory Interface: SPI - Quad I/O, QPI, DTR
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 1.6ms
• Access Time: -
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-TFBGA (6x8)

封装: 24-TBGA

IS64WV2568EDBLL-10BLA3-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 2M PARALLEL 36MBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 2Mb (256K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 10ns
• Access Time: 10ns
• Voltage - Supply: 2.4 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 36-TFBGA
• Supplier Device Package: 36-TFBGA (6x8)

封装: 36-TFBGA

IS61NLP25672-250B1

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 209LFBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 18Mb (256K x 72)
• Memory Interface: Parallel
• Clock Frequency: 250MHz
• Write Cycle Time - Word, Page: -
• Access Time: 2.6ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 209-BGA
• Supplier Device Package: 209-LFBGA (14x22)

封装: 209-BGA

IS61WV102416DALL-12BLI

ISSI, Integrated Silicon Solution Inc

16Mb,High-Speed,Async,1Mbx16, 12

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 16Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 12ns
• Access Time: 12 ns
• Voltage - Supply: 1.65V ~ 2.2V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFBGA
• Supplier Device Package: 48-TFBGA (6x8)

封装: -

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IS43TR16512BL-107MBLI-TR

ISSI, Integrated Silicon Solution Inc

8G, 1.35V, DDR3L, 512Mx16, 1866M

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3L
• Memory Size: 8Gbit
• Memory Interface: Parallel
• Clock Frequency: 933 MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 20 ns
• Voltage - Supply: 1.283V ~ 1.45V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-TWBGA (10x14)

封装: -

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IS42S16400N-6TL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 64MBIT PAR 54TSOP II

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 64Mbit
• Memory Interface: LVTTL
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4 ns
• Voltage - Supply: 3V ~ 3.6V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 54-TSOP II

封装: -

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IS46LD32640B-25BLA1-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR2-S4
• Memory Size: 2Gbit
• Memory Interface: HSUL_12
• Clock Frequency: 400 MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.5 ns
• Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
• Operating Temperature: -40°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 134-TFBGA
• Supplier Device Package: 134-TFBGA (10x11.5)

封装: -

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IS46LQ32128AL-062TBLA2

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +105C), 4

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4X
• Memory Size: 4Gbit
• Memory Interface: LVSTL
• Clock Frequency: 1.6 GHz
• Write Cycle Time - Word, Page: 18ns
• Access Time: 3.5 ns
• Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
• Operating Temperature: -40°C ~ 105°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 200-VFBGA
• Supplier Device Package: 200-VFBGA (10x14.5)

封装: -

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IS66WVH32M8DALL-166B1LI-TR

ISSI, Integrated Silicon Solution Inc

256Mb, HyperRAM, 32Mbx8, 1.8V, 1

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 256Mbit
• Memory Interface: Parallel
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: 36ns
• Access Time: 36 ns
• Voltage - Supply: 1.7V ~ 1.95V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-TFBGA (6x8)

封装: -

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IS25WP01G-RILE

ISSI, Integrated Silicon Solution Inc

1Gb QPI/QSPI, 24-ball LFBGA 6x8m

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 1Gbit
• Memory Interface: SPI - Quad I/O, QPI, DTR
• Clock Frequency: 104 MHz
• Write Cycle Time - Word, Page: 50µs, 1ms
• Access Time: 10 ns
• Voltage - Supply: 1.7V ~ 1.95V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-LBGA
• Supplier Device Package: 24-LFBGA (6x8)

封装: -

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IS49NLC93200A-25WBL

ISSI, Integrated Silicon Solution Inc

RLDRAM2 Memory, 288Mbit, x9, Com

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: RLDRAM 2
• Memory Size: 288Mbit
• Memory Interface: HSTL
• Clock Frequency: 400 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 20 ns
• Voltage - Supply: 1.7V ~ 1.9V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 144-TFBGA
• Supplier Device Package: 144-TWBGA (11x18.5)

封装: -

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