IXYS 产品

IXGR40N60C2G1

IXYS

IGBT 600V ISOPLUS247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

封装: ISOPLUS247?

IXGP16N60B2

IXYS

IGBT 600V 40A 150W TO220

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 100A
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
• Power - Max: 150W
• Switching Energy: 160µJ (on), 120µJ (off)
• Input Type: Standard
• Gate Charge: 24nC
• Td (on/off) @ 25°C: 18ns/73ns
• Test Condition: 400V, 12A, 22 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封装: TO-220-3

IXBH28N170A

IXYS

IGBT 1700V 30A 300W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 14A
• Power - Max: 300W
• Switching Energy: 1.2mJ (off)
• Input Type: Standard
• Gate Charge: 105nC
• Td (on/off) @ 25°C: 35ns/265ns
• Test Condition: 850V, 14A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 360ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXBH)

封装: TO-247-3

IXGA8N100

IXYS

IGBT 1000V 16A 54W TO263

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1000V
• Current - Collector (Ic) (Max): 16A
• Current - Collector Pulsed (Icm): 32A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 8A
• Power - Max: 54W
• Switching Energy: 2.3mJ (off)
• Input Type: Standard
• Gate Charge: 26.5nC
• Td (on/off) @ 25°C: 15ns/600ns
• Test Condition: 800V, 8A, 120 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (IXGA)

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXB200I600NA

IXYS

IGBT 6000V SOT227

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

IXFR20N80Q

IXYS

MOSFET N-CH ISOPLUS247

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

IXFQ24N50P2

IXYS

500V POLAR2 HIPERFETS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 480W (Tc)
• Rds On (Max) @ Id, Vgs: 270 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

封装: TO-3P-3, SC-65-3

IXTQ56N15T

IXYS

MOSFET N-CH 150V 56A TO-3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

封装: TO-3P-3, SC-65-3

IXTK120N25P

IXYS

MOSFET N-CH 250V 120A TO-264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 700W (Tc)
• Rds On (Max) @ Id, Vgs: 24 mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264 (IXTK)
• Package / Case: TO-264-3, TO-264AA

封装: TO-264-3, TO-264AA

CS20-12IO1

IXYS

THYRISTOR PHASE 1200V TO-247AD

• Voltage - Off State: 1200V
• Voltage - Gate Trigger (Vgt) (Max): 1V
• Current - Gate Trigger (Igt) (Max): 65mA
• Voltage - On State (Vtm) (Max): 2.1V
• Current - On State (It (AV)) (Max): 19A
• Current - On State (It (RMS)) (Max): 30A
• Current - Hold (Ih) (Max): 100mA
• Current - Off State (Max): 2mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 200A, 215A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-247AD

封装: TO-3P-3 Full Pack

MCD72-18IO8B

IXYS

MOD THYRISTOR/DIO 1800V TO-240AA

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1800V
• Current - On State (It (AV)) (Max): 115A
• Current - On State (It (RMS)) (Max): 180A
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1800A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: TO-240AA

封装: TO-240AA

VHFD37-08IO1

IXYS

RECT BRIDGE 1PH 800V V1-A-PAK

• Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)
• Number of SCRs, Diodes: 2 SCRs, 4 Diodes
• Voltage - Off State: 800V
• Current - On State (It (AV)) (Max): 36A
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): 1V
• Current - Gate Trigger (Igt) (Max): 65mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 320A, 350A
• Current - Hold (Ih) (Max): 100mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: V1A-PAK

封装: V1A-PAK

VWO35-08HO7

IXYS

MODULE AC CTLR 800V ECO-PAC1

• Structure: 3-Phase Controller - All SCRs
• Number of SCRs, Diodes: 6 SCRs
• Voltage - Off State: 800V
• Current - On State (It (AV)) (Max): 16A
• Current - On State (It (RMS)) (Max): 35A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 65mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 200A, 210A
• Current - Hold (Ih) (Max): 50mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module

封装: Module

CLA40P1200FC

IXYS

MOD THYRISTOR DUAL 1200V I4-PAC

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1200V
• Current - On State (It (AV)) (Max): 40A
• Current - On State (It (RMS)) (Max): 63A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 50mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 650A, 700A
• Current - Hold (Ih) (Max): 100mA
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: i4-Pac?-5

封装: i4-Pac?-5

DSB2I40SB

IXYS

DIODE SCHOTTKY 40V 2A SMB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB (DO-214AA)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AA, SMB

DSEP30-12AR

IXYS

DIODE GEN 1.2KV 30A ISOPLUS247

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 2.74V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 40ns
• Current - Reverse Leakage @ Vr: 250µA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?
• Operating Temperature - Junction: -55°C ~ 175°C

封装: ISOPLUS247?

MDD95-12N1B

IXYS

DIODE MODULE 1.2KV 120A TO240AA

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 120A
• Voltage - Forward (Vf) (Max) @ If: 1.43V @ 300A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 15mA @ 1200V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: TO-240AA
• Supplier Device Package: TO-240AA

封装: TO-240AA

DSEC30-12A

IXYS

DIODE ARRAY GP 1200V 15A TO247AD

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 2.74V @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 40ns
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-247AD

封装: TO-3P-3 Full Pack

VBO88-14NO7

IXYS

DIODE BRIDGE 1400V 95A ECO-PAC2

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1400V
• Current - Average Rectified (Io): 92A
• Voltage - Forward (Vf) (Max) @ If: 1.75V @ 200A
• Current - Reverse Leakage @ Vr: 500µA @ 1400V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC2
• Supplier Device Package: ECO-PAC2

封装: ECO-PAC2

IXBOD1-09

IXYS

IC SGL DIODE BOD 0.9A 900V FP

• Voltage - Clamping: 900V
• Technology: Mixed Technology
• Number of Circuits: 1
• Number of Circuits: 1
• Applications: High Voltage
• Mounting Type: Through Hole
• Package / Case: Radial
• Supplier Device Package: FP-Case

封装: Radial

N1366JK120

IXYS

SCR 1.2KV 2718A WP1

• Voltage - Off State: 1.2 kV
• Voltage - Gate Trigger (Vgt) (Max): 3 V
• Current - Gate Trigger (Igt) (Max): 300 mA
• Voltage - On State (Vtm) (Max): 1.99 V
• Current - On State (It (AV)) (Max): 1366 A
• Current - On State (It (RMS)) (Max): 2718 A
• Current - Hold (Ih) (Max): 1 A
• Current - Off State (Max): 100 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AB, B-PuK
• Supplier Device Package: WP1

封装: -

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IXGT64N60B3

IXYS

IGBT PT 600V 64A TO268

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 64 A
• Current - Collector Pulsed (Icm): 400 A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
• Power - Max: 460 W
• Switching Energy: 1.5mJ (on), 1mJ (off)
• Input Type: Standard
• Gate Charge: 168 nC
• Td (on/off) @ 25°C: 25ns/138ns
• Test Condition: 480V, 50A, 3Ohm, 15V
• Reverse Recovery Time (trr): 41 ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

封装: -

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IXTN15N100

IXYS

MOSFET N-CH SOT227

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

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IXYH50N65C3D1

IXYS

IGBT 650V 132A TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 132 A
• Current - Collector Pulsed (Icm): 250 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
• Power - Max: 600 W
• Switching Energy: 800µJ (on), 800µJ (off)
• Input Type: Standard
• Gate Charge: 86 nC
• Td (on/off) @ 25°C: 20ns/90ns
• Test Condition: 400V, 36A, 5Ohm, 15V
• Reverse Recovery Time (trr): 36 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXTH)

封装: -

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QV8025LH5TP

IXYS

TRIAC 800V 25A ITO220AB

• Triac Type: Standard
• Voltage - Off State: 800 V
• Current - On State (It (RMS)) (Max): 25 A
• Voltage - Gate Trigger (Vgt) (Max): 1.3 V
• Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
• Current - Gate Trigger (Igt) (Max): 50 mA
• Current - Hold (Ih) (Max): 75 mA
• Configuration: Single
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Isolated Tab
• Supplier Device Package: ITO-220AB

封装: -

IXTY03N90PHV

IXYS

MOSFET N-CH TO252AA

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

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IXCY10M90S-TRL

IXYS

IC CURRENT REGULATOR TO252AA

• Function: Current Regulator
• Sensing Method: -
• Accuracy: -
• Voltage - Input: 900V
• Current - Output: 100mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA

封装: -

W5282ZC300

IXYS

DIODE GEN PURP 3KV 5282A W7

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 3000 V
• Current - Average Rectified (Io): 5282A
• Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6000 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 mA @ 3000 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AE
• Supplier Device Package: W7
• Operating Temperature - Junction: -55°C ~ 160°C

封装: -

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