页 61 - IXYS 产品 | 黑森尔电子

零件编号	制造商	描述	封装	库存
IXGH24N60CD1	IXYS	IGBT 600V 48A 150W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 48A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A Power - Max: 150W Switching Energy: 240µJ (off) Input Type: Standard Gate Charge: 55nC Td (on/off) @ 25°C: 15ns/75ns Test Condition: 480V, 24A, 10 Ohm, 15V Reverse Recovery Time (trr): 25ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	封装: TO-247-3	库存103,464
IXGP30N60C2	IXYS	IGBT 600V 70A 190W TO220 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A Power - Max: 190W Switching Energy: 190µJ (off) Input Type: Standard Gate Charge: 70nC Td (on/off) @ 25°C: 13ns/70ns Test Condition: 400V, 24A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	封装: TO-220-3	库存3,360
IXGR72N60A3H1	IXYS	IGBT 600V 75A 200W ISOPLUS247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 400A Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 60A Power - Max: 200W Switching Energy: 1.4mJ (on), 3.5mJ (off) Input Type: Standard Gate Charge: 230nC Td (on/off) @ 25°C: 31ns/320ns Test Condition: 480V, 50A, 3 Ohm, 15V Reverse Recovery Time (trr): 140ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUS247? Supplier Device Package: ISOPLUS247?	封装: ISOPLUS247?	库存4,928
IXGH36N60B3D1	IXYS	IGBT 600V 250W TO247AD IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Power - Max: 250W Switching Energy: 540µJ (on), 800µJ (off) Input Type: Standard Gate Charge: 80nC Td (on/off) @ 25°C: 19ns/125ns Test Condition: 400V, 30A, 5 Ohm, 15V Reverse Recovery Time (trr): 25ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	封装: TO-247-3	库存2,112
VIO100-06P1	IXYS	MOD IGBT DIODE SGL 600V ECOPAC2 IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 93A Power - Max: 294W Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A Current - Collector Cutoff (Max): 1.4mA Input Capacitance (Cies) @ Vce: 4.2nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC2 Supplier Device Package: ECO-PAC2	封装: ECO-PAC2	库存4,720
MIXA60W1200TED	IXYS	IGBT MODULE 1200V 60A IGBT Type: PT Configuration: Three Phase Inverter with Brake Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 85A Power - Max: 290W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A Current - Collector Cutoff (Max): 500µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: E2 Supplier Device Package: E2	封装: E2	库存4,448
MUBW45-12T6K	IXYS	MODULE IGBT CBI E1 IGBT Type: Trench Configuration: Three Phase Inverter with Brake Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 43A Power - Max: 160W Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 45A Current - Collector Cutoff (Max): 1.25mA Input Capacitance (Cies) @ Vce: 1.81nF @ 25V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: E1 Supplier Device Package: E1	封装: E1	库存7,552
IXFX20N80Q	IXYS	MOSFET N-CH PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	封装: TO-247-3	库存3,936
IXFV74N20PS	IXYS	MOSFET N-CH 200V 74A PLUS220-S FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 37A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS-220SMD Package / Case: PLUS-220SMD	封装: PLUS-220SMD	库存4,496
IXTP32N65XM	IXYS	MOSFET N-CH 650V 14A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2206pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 135 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	封装: TO-220-3	库存6,944
IXTH160N10T	IXYS	MOSFET N-CH 100V 160A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 430W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	封装: TO-247-3	库存390,000
IXFK180N10	IXYS	MOSFET N-CH 100V 180A TO-264AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	封装: TO-264-3, TO-264AA	库存6,060
475-102N21A-00	IXYS	RF MOSFET N-CHANNEL DE475 Transistor Type: N-Channel Frequency: 30MHz Gain: - Voltage - Test: - Current Rating: 1mA Noise Figure: - Current - Test: - Power - Output: 1800W Voltage - Rated: 1000V Package / Case: 6-SMD, Flat Lead Exposed Pad Supplier Device Package: DE475	封装: 6-SMD, Flat Lead Exposed Pad	库存6,684
VHF85-12IO7	IXYS	RECT BRIDGE 1PH 1200V PWS-E-1 Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1) Number of SCRs, Diodes: 2 SCRs, 2 Diodes Voltage - Off State: 1200V Current - On State (It (AV)) (Max): - Current - On State (It (RMS)) (Max): 58A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: PWS-E1	封装: PWS-E1	库存4,640
VVZF70-08IO7	IXYS	RECT BRIDGE 3PH 800V FO-T-A Structure: Bridge, 3-Phase - SCRs/Diodes Number of SCRs, Diodes: 3 SCRs, 3 Diodes Voltage - Off State: 800V Current - On State (It (AV)) (Max): 70A Current - On State (It (RMS)) (Max): - Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: FO-T-A	封装: FO-T-A	库存5,664
DSA2I100SB	IXYS	DIODE SCHOTTKY 100V 2A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 790mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-214AA, SMB	库存2,448
DGS19-025CS	IXYS	DIODE SCHOTTKY 250V 31A TO252AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 250V Current - Average Rectified (Io): 31A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 26ns Current - Reverse Leakage @ Vr: 400µA @ 250V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存4,752
DHF30IM600QB	IXYS	DIODE GEN PURP 600V 30A TO3P Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.36V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-3P-3, SC-65-3	库存7,104
DSAI35-16A	IXYS	DIODE AVALANCHE 1.6KV 49A DO203 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 49A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4mA @ 1600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -40°C ~ 180°C	封装: DO-203AB, DO-5, Stud	库存2,064
HTZ240F10K	IXYS	DIODE MODULE 10KV 1.7A Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 10000V Current - Average Rectified (Io) (per Diode): 1.7A Voltage - Forward (Vf) (Max) @ If: 10V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 10000V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封装: Module	库存7,280
VBO65-12NO7	IXYS	DIODE BRIDGE 1200V 65A FO-T-A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 65A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 150A Current - Reverse Leakage @ Vr: 500µA @ 1200V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: FO-T-A Supplier Device Package: FO-T-A	封装: FO-T-A	库存4,848
VBO68-08NO7	IXYS	DIODE BRIDGE 800V 68A ECO-PAC1 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 68A Voltage - Forward (Vf) (Max) @ If: 1.14V @ 30A Current - Reverse Leakage @ Vr: 40µA @ 800V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC1 Supplier Device Package: ECO-PAC1	封装: ECO-PAC1	库存7,360
VBO36-12NO8	IXYS	RECT BRIDGE 30A 1200V FO-B Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A Current - Reverse Leakage @ Vr: 300µA @ 1200V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, FO-B Supplier Device Package: FO-B	封装: 4-Square, FO-B	库存7,904
IXTT38N30L2HV	IXYS	MOSFET N-CH 300V 38A TO268HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268HV (IXTT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	封装: -	Request a Quote
DPG30C200PC-TUB	IXYS	DIODE ARRAY GP 200V 15A TO263 Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io) (per Diode): 15A Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2PAK)	封装: -	库存120
IXFH22N60X2A	IXYS	MOSFET N-CH 22A TO247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote
IXYT40N120A4HV	IXYS	IGBT PT 1200V 140A TO268HV IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 140 A Current - Collector Pulsed (Icm): 275 A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A Power - Max: 600 W Switching Energy: 2.3mJ (on), 3.75mJ (off) Input Type: Standard Gate Charge: 90 nC Td (on/off) @ 25°C: 22ns/204ns Test Condition: 600V, 32A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268HV (IXYT)	封装: -	Request a Quote
CLE20E1200PC-TRL	IXYS	SCR 1.2KV 35A TO263 Voltage - Off State: 1.2 kV Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - Gate Trigger (Igt) (Max): 40 mA Voltage - On State (Vtm) (Max): 1.54 V Current - On State (It (AV)) (Max): 20 A Current - On State (It (RMS)) (Max): 35 A Current - Hold (Ih) (Max): 50 mA Current - Off State (Max): - Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 175A SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2PAK)	封装: -	Request a Quote

IXGH24N60CD1

IXYS

IGBT 600V 48A 150W TO247AD

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 48A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Power - Max: 150W
Switching Energy: 240µJ (off)
Input Type: Standard
Gate Charge: 55nC
Td (on/off) @ 25°C: 15ns/75ns
Test Condition: 480V, 24A, 10 Ohm, 15V
Reverse Recovery Time (trr): 25ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

封装: TO-247-3

库存103,464

IXGP30N60C2

IXYS

IGBT 600V 70A 190W TO220

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 70A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Power - Max: 190W
Switching Energy: 190µJ (off)
Input Type: Standard
Gate Charge: 70nC
Td (on/off) @ 25°C: 13ns/70ns
Test Condition: 400V, 24A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

封装: TO-220-3

库存3,360

IXGR72N60A3H1

IXYS

IGBT 600V 75A 200W ISOPLUS247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 400A
Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 60A
Power - Max: 200W
Switching Energy: 1.4mJ (on), 3.5mJ (off)
Input Type: Standard
Gate Charge: 230nC
Td (on/off) @ 25°C: 31ns/320ns
Test Condition: 480V, 50A, 3 Ohm, 15V
Reverse Recovery Time (trr): 140ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS247?
Supplier Device Package: ISOPLUS247?

封装: ISOPLUS247?

库存4,928

IXGH36N60B3D1

IXYS

IGBT 600V 250W TO247AD

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Power - Max: 250W
Switching Energy: 540µJ (on), 800µJ (off)
Input Type: Standard
Gate Charge: 80nC
Td (on/off) @ 25°C: 19ns/125ns
Test Condition: 400V, 30A, 5 Ohm, 15V
Reverse Recovery Time (trr): 25ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

封装: TO-247-3

库存2,112

VIO100-06P1

IXYS

MOD IGBT DIODE SGL 600V ECOPAC2

IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 93A
Power - Max: 294W
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
Current - Collector Cutoff (Max): 1.4mA
Input Capacitance (Cies) @ Vce: 4.2nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC2
Supplier Device Package: ECO-PAC2

封装: ECO-PAC2

库存4,720

MIXA60W1200TED

IXYS

IGBT MODULE 1200V 60A

IGBT Type: PT
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 85A
Power - Max: 290W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
Current - Collector Cutoff (Max): 500µA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E2
Supplier Device Package: E2

封装: E2

库存4,448

MUBW45-12T6K

IXYS

MODULE IGBT CBI E1

IGBT Type: Trench
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 43A
Power - Max: 160W
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 45A
Current - Collector Cutoff (Max): 1.25mA
Input Capacitance (Cies) @ Vce: 1.81nF @ 25V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E1
Supplier Device Package: E1

封装: E1

库存7,552

IXFX20N80Q

IXYS

MOSFET N-CH PLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 420 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247?-3
Package / Case: TO-247-3

封装: TO-247-3

库存3,936

IXFV74N20PS

IXYS

MOSFET N-CH 200V 74A PLUS220-S

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 34 mOhm @ 37A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PLUS-220SMD
Package / Case: PLUS-220SMD

封装: PLUS-220SMD

库存4,496

IXTP32N65XM

IXYS

MOSFET N-CH 650V 14A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2206pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 135 mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

封装: TO-220-3

库存6,944

IXTH160N10T

IXYS

MOSFET N-CH 100V 160A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 430W (Tc)
Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

封装: TO-247-3

库存390,000

IXFK180N10

IXYS

MOSFET N-CH 100V 180A TO-264AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10900pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 560W (Tc)
Rds On (Max) @ Id, Vgs: 8 mOhm @ 90A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264AA (IXFK)
Package / Case: TO-264-3, TO-264AA

封装: TO-264-3, TO-264AA

库存6,060

475-102N21A-00

IXYS

RF MOSFET N-CHANNEL DE475

Transistor Type: N-Channel
Frequency: 30MHz
Gain: -
Voltage - Test: -
Current Rating: 1mA
Noise Figure: -
Current - Test: -
Power - Output: 1800W
Voltage - Rated: 1000V
Package / Case: 6-SMD, Flat Lead Exposed Pad
Supplier Device Package: DE475

封装: 6-SMD, Flat Lead Exposed Pad

库存6,684

VHF85-12IO7

IXYS

RECT BRIDGE 1PH 1200V PWS-E-1

Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)
Number of SCRs, Diodes: 2 SCRs, 2 Diodes
Voltage - Off State: 1200V
Current - On State (It (AV)) (Max): -
Current - On State (It (RMS)) (Max): 58A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 100mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: PWS-E1

封装: PWS-E1

库存4,640

VVZF70-08IO7

IXYS

RECT BRIDGE 3PH 800V FO-T-A

Structure: Bridge, 3-Phase - SCRs/Diodes
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Off State: 800V
Current - On State (It (AV)) (Max): 70A
Current - On State (It (RMS)) (Max): -
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 100mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: FO-T-A

封装: FO-T-A

库存5,664

DSA2I100SB

IXYS

DIODE SCHOTTKY 100V 2A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 790mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-214AA, SMB

库存2,448

DGS19-025CS

IXYS

DIODE SCHOTTKY 250V 31A TO252AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 250V
Current - Average Rectified (Io): 31A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26ns
Current - Reverse Leakage @ Vr: 400µA @ 250V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存4,752

DHF30IM600QB

IXYS

DIODE GEN PURP 600V 30A TO3P

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.36V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-3P-3, SC-65-3

库存7,104

DSAI35-16A

IXYS

DIODE AVALANCHE 1.6KV 49A DO203

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 49A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 150A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4mA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -40°C ~ 180°C

封装: DO-203AB, DO-5, Stud

库存2,064

HTZ240F10K

IXYS

DIODE MODULE 10KV 1.7A

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 10000V
Current - Average Rectified (Io) (per Diode): 1.7A
Voltage - Forward (Vf) (Max) @ If: 10V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 10000V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封装: Module

库存7,280

VBO65-12NO7

IXYS

DIODE BRIDGE 1200V 65A FO-T-A

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 65A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 150A
Current - Reverse Leakage @ Vr: 500µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: FO-T-A
Supplier Device Package: FO-T-A

封装: FO-T-A

库存4,848

VBO68-08NO7

IXYS

DIODE BRIDGE 800V 68A ECO-PAC1

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 68A
Voltage - Forward (Vf) (Max) @ If: 1.14V @ 30A
Current - Reverse Leakage @ Vr: 40µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC1
Supplier Device Package: ECO-PAC1

封装: ECO-PAC1

库存7,360

VBO36-12NO8

IXYS

RECT BRIDGE 30A 1200V FO-B

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, FO-B
Supplier Device Package: FO-B

封装: 4-Square, FO-B

库存7,904

IXTT38N30L2HV

IXYS

MOSFET N-CH 300V 38A TO268HV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300 V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 19A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268HV (IXTT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

封装: -

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DPG30C200PC-TUB

IXYS

DIODE ARRAY GP 200V 15A TO263

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io) (per Diode): 15A
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2PAK)

封装: -

库存120

IXFH22N60X2A

IXYS

MOSFET N-CH 22A TO247

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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IXYT40N120A4HV

IXYS

IGBT PT 1200V 140A TO268HV

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 140 A
Current - Collector Pulsed (Icm): 275 A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Power - Max: 600 W
Switching Energy: 2.3mJ (on), 3.75mJ (off)
Input Type: Standard
Gate Charge: 90 nC
Td (on/off) @ 25°C: 22ns/204ns
Test Condition: 600V, 32A, 5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268HV (IXYT)

封装: -

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CLE20E1200PC-TRL

IXYS

SCR 1.2KV 35A TO263

Voltage - Off State: 1.2 kV
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - Gate Trigger (Igt) (Max): 40 mA
Voltage - On State (Vtm) (Max): 1.54 V
Current - On State (It (AV)) (Max): 20 A
Current - On State (It (RMS)) (Max): 35 A
Current - Hold (Ih) (Max): 50 mA
Current - Off State (Max): -
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 175A
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2PAK)

封装: -

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