Micro Commercial Co 产品

BC847CT-TP

Micro Commercial Co

TRANS NPN 45V 0.1A SOT-523

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
• Power - Max: 150mW
• Frequency - Transition: 100MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Supplier Device Package: SOT-523

封装: SOT-523

SMD22LHE-TP

Micro Commercial Co

DIODE SCHOTTKY 20V 2A SOD123HE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123H
• Supplier Device Package: SOD-123HE
• Operating Temperature - Junction: -55°C ~ 150°C

封装: SOD-123H

GL34J-TP

Micro Commercial Co

DIODE GEN 600V 500MA MINI MELF

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF
• Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-213AC, MINI-MELF, SOD-80

ES1K-TP

Micro Commercial Co

DIODE GEN PURP 800V 1A DO214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (HSMA)
• Operating Temperature - Junction: -50°C ~ 150°C

封装: DO-214AC, SMA

MP5005W-BP

Micro Commercial Co

RECT BRIDGE 50A 50V WIRE LEADS

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 50V
• Current - Average Rectified (Io): 50A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 25A
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Operating Temperature: -50°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-Square, MP-50W
• Supplier Device Package: MP-50WW

封装: 4-Square, MP-50W

15KP110CA-TP

Micro Commercial Co

TVS DIODE 110VWM 178VC R6

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 110V
• Voltage - Breakdown (Min): 122V
• Voltage - Clamping (Max) @ Ipp: 178V
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: R6, Axial
• Supplier Device Package: R-6

封装: R6, Axial

SLD36A-TP

Micro Commercial Co

TVS DIODE 36VWM 58.1VC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 36V
• Voltage - Breakdown (Min): 40V
• Voltage - Clamping (Max) @ Ipp: 58.1V
• Current - Peak Pulse (10/1000µs): 103A
• Power - Peak Pulse: 6000W (6kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: R6, Axial
• Supplier Device Package: R-6

封装: R6, Axial

1.5KE36CA-TP

Micro Commercial Co

TVS DIODE 30.8VWM DO201AE

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 30.8V
• Voltage - Breakdown (Min): 34.2V
• Voltage - Clamping (Max) @ Ipp: 49.9V
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AE, Axial
• Supplier Device Package: DO-201AE

封装: DO-201AE, Axial

ESD5V0D3B-TP

Micro Commercial Co

TVS DIODE 5VWM 13.5VC SOD323

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 5V (Max)
• Voltage - Breakdown (Min): 5.8V
• Voltage - Clamping (Max) @ Ipp: 13.5V
• Current - Peak Pulse (10/1000µs): 42A (8/20µs)
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 35pF @ 1MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

封装: SC-76, SOD-323

2SA733-R-AP

Micro Commercial Co

TRANS PNP 50V 0.1A TO92

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
• Power - Max: 250 mW
• Frequency - Transition: 100MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Supplier Device Package: TO-92

封装: -

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1N5951B3P-TP

Micro Commercial Co

Interface

• Voltage - Zener (Nom) (Vz): 120 V
• Tolerance: ±5%
• Power - Max: 3 W
• Impedance (Max) (Zzt): 380 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 91.2 V
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41

封装: -

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ER5A-TP

Micro Commercial Co

Interface

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 50 V
• Capacitance @ Vr, F: 100pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC (DO-214AB)
• Operating Temperature - Junction: -50°C ~ 150°C

封装: -

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10A04GP-TP

Micro Commercial Co

Interface

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Capacitance @ Vr, F: 150pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: R-6, Axial
• Supplier Device Package: R-6
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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MBR5U45-TP

Micro Commercial Co

Interface

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 470 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 µA @ 45 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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MURSD860B-TP

Micro Commercial Co

DIODE GEN PURP 600V 8A DPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 40 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: 40pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252 (DPAK)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

UG3DAFL-TP

Micro Commercial Co

DIODE GEN PURP 200V 3A DO221AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30 ns
• Current - Reverse Leakage @ Vr: 2 µA @ 200 V
• Capacitance @ Vr, F: 40pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: DO-221AC (SMA-FL)
• Operating Temperature - Junction: -55°C ~ 175°C

封装: -

BZT52B5V8S-TP

Micro Commercial Co

DIODE ZENER 5.8V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 5.8 V
• Tolerance: ±2.07%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 1.5 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

封装: -

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S3MHE3-TP

Micro Commercial Co

Interface

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC (DO-214AB)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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MURS820FA-BP

Micro Commercial Co

DIODE GEN PURP 200V 8A ITO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Capacitance @ Vr, F: 65pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Isolated Tab
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

SF31G-AP

Micro Commercial Co

DIODE GEN PURP 50V 3A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 50 V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -65°C ~ 150°C

封装: -

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S8550-D-BP

Micro Commercial Co

TRANS PNP 25V 0.5A TO92

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 500 mA
• Voltage - Collector Emitter Breakdown (Max): 25 V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 200nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 1V
• Power - Max: 625 mW
• Frequency - Transition: 150MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92

封装: -

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2N7000-AP

Micro Commercial Co

MOSFET N-CH 60V 200MA TO92

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 625mW (Ta)
• Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-92
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

封装: -

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HER308-TP

Micro Commercial Co

DIODE GEN PURP 1KV 3A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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RL255GP-AP

Micro Commercial Co

DIODE GEN PURP 600V 2.5A R-3

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 2.5A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2.5 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: 40pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: R-3, Axial
• Supplier Device Package: R-3
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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MBRD10200CTS-TP

Micro Commercial Co

DIODE ARR SCHOTT 200V 10A DPAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 930 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252 (DPAK)

封装: -

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MCU60N08-TP

Micro Commercial Co

MOSFET N-CH

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 60A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 8.5mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

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MMSZ5259BHE3-TP

Micro Commercial Co

500MW ZENER SOD-123

• Voltage - Zener (Nom) (Vz): 39 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 30 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

封装: -

SF15G-AP

Micro Commercial Co

DIODE GEN PURP 300V 1A DO41

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 300 V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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