页 9 - Microchip Technology 产品 - 晶体管 - FET，MOSFET - 单

APT10026JLL

Microchip Technology

MOSFET N-CH 1000V 30A ISOTOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7114 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 260mOhm @ 15A, 10V
Operating Temperature: -
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC

封装: -

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MOSFET (Metal Oxide)

1000 V

30A (Tc)

-

5V @ 5mA

267 nC @ 10 V

7114 pF @ 25 V

-

260mOhm @ 15A, 10V

-

Chassis Mount

ISOTOP®

SOT-227-4, miniBLOC

APT10M19SVFRG

Microchip Technology

MOSFET N-CH 100V 75A D3PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 19mOhm @ 37.5A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D3PAK
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

封装: -

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MOSFET (Metal Oxide)

100 V

75A (Tc)

-

4V @ 1mA

300 nC @ 10 V

6120 pF @ 25 V

-

19mOhm @ 37.5A, 10V

-

Surface Mount

D3PAK

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

APT10025JVR

Microchip Technology

MOSFET N-CH 1000V 34A ISOTOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 990 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC

封装: -

库存27

MOSFET (Metal Oxide)

1000 V

34A (Tc)

-

4V @ 5mA

990 nC @ 10 V

18000 pF @ 25 V

-

250mOhm @ 500mA, 10V

-

Chassis Mount

ISOTOP®

SOT-227-4, miniBLOC

APT6025BVRG

Microchip Technology

MOSFET N-CH 600V 25A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-247 [B]
Package / Case: TO-247-3

封装: -

库存99

MOSFET (Metal Oxide)

600 V

25A (Tc)

-

4V @ 1mA

275 nC @ 10 V

5160 pF @ 25 V

-

250mOhm @ 500mA, 10V

-

Through Hole

TO-247 [B]

TO-247-3

APT6029SLLG

Microchip Technology

MOSFET N-CH 600V 21A D3PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2615 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 290mOhm @ 10.5A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D3PAK
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

封装: -

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MOSFET (Metal Oxide)

600 V

21A (Tc)

-

5V @ 1mA

65 nC @ 10 V

2615 pF @ 25 V

-

290mOhm @ 10.5A, 10V

-

Surface Mount

D3PAK

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

APT6025BLLG

Microchip Technology

MOSFET N-CH 600V 24A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 250mOhm @ 12A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-247 [B]
Package / Case: TO-247-3

封装: -

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MOSFET (Metal Oxide)

600 V

24A (Tc)

-

5V @ 1mA

65 nC @ 10 V

2910 pF @ 25 V

-

250mOhm @ 12A, 10V

-

Through Hole

TO-247 [B]

TO-247-3

APT10050LVRG

Microchip Technology

MOSFET N-CH 1000V 21A TO264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-264 [L]
Package / Case: TO-264-3, TO-264AA

封装: -

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MOSFET (Metal Oxide)

1000 V

21A (Tc)

-

4V @ 2.5mA

500 nC @ 10 V

7900 pF @ 25 V

-

500mOhm @ 500mA, 10V

-

Through Hole

TO-264 [L]

TO-264-3, TO-264AA

APT9M100S

Microchip Technology

MOSFET N-CH 1000V 9A D3PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2605 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 335W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3PAK
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

封装: -

库存258

MOSFET (Metal Oxide)

1000 V

9A (Tc)

10V

5V @ 1mA

80 nC @ 10 V

2605 pF @ 25 V

±30V

-

335W (Tc)

1.4Ohm @ 5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

D3PAK

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

MRH25N12U3

Microchip Technology

RH MOSFET _ U3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.5A, 12V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: U3 (SMD-0.5)
Package / Case: 3-SMD, No Lead

封装: -

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MOSFET (Metal Oxide)

250 V

12.4A (Tc)

12V

4V @ 1mA

50 nC @ 12 V

1980 pF @ 25 V

±20V

-

75W (Tc)

210mOhm @ 7.5A, 12V

-55°C ~ 150°C (TJ)

Surface Mount

U3 (SMD-0.5)

3-SMD, No Lead

APT20M16LFLLG

Microchip Technology

MOSFET N-CH 200V 100A TO264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7220 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-264 [L]
Package / Case: TO-264-3, TO-264AA

封装: -

库存75

MOSFET (Metal Oxide)

200 V

100A (Tc)

-

5V @ 2.5mA

140 nC @ 10 V

7220 pF @ 25 V

-

16mOhm @ 50A, 10V

-

Through Hole

TO-264 [L]

TO-264-3, TO-264AA

APT12080JVFR

Microchip Technology

MOSFET N-CH 1200V 15A ISOTOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 485 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 800mOhm @ 7.5A, 10V
Operating Temperature: -
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC

封装: -

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MOSFET (Metal Oxide)

1200 V

15A (Tc)

-

4V @ 2.5mA

485 nC @ 10 V

7800 pF @ 25 V

-

800mOhm @ 7.5A, 10V

-

Chassis Mount

ISOTOP®

SOT-227-4, miniBLOC

MRH20N45T1SR

Microchip Technology

RH MOSFET 200V TO-254AA

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

APT12080LVRG

Microchip Technology

MOSFET N-CH 1200V 16A TO264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 485 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264 (L)
Package / Case: TO-264-3, TO-264AA

封装: -

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MOSFET (Metal Oxide)

1200 V

16A (Tc)

10V

4V @ 2.5mA

485 nC @ 10 V

7800 pF @ 25 V

±30V

-

520W (Tc)

800mOhm @ 8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-264 (L)

TO-264-3, TO-264AA

APT4014BVFRG

Microchip Technology

MOSFET N-CH 400V 28A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400 V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 140mOhm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-247 [B]
Package / Case: TO-247-3

封装: -

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MOSFET (Metal Oxide)

400 V

28A (Tc)

-

4V @ 1mA

160 nC @ 10 V

3600 pF @ 25 V

-

140mOhm @ 500mA, 10V

-

Through Hole

TO-247 [B]

TO-247-3

APT5018SFLLG

Microchip Technology

MOSFET N-CH 500V 27A D3PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2596 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 180mOhm @ 13.5A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D3PAK
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

封装: -

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MOSFET (Metal Oxide)

500 V

27A (Tc)

-

5V @ 1mA

58 nC @ 10 V

2596 pF @ 25 V

-

180mOhm @ 13.5A, 10V

-

Surface Mount

D3PAK

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

APT5010B2VRG

Microchip Technology

MOSFET N-CH 500V 47A T-MAX

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: T-MAX™ [B2]
Package / Case: TO-247-3 Variant

封装: -

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MOSFET (Metal Oxide)

500 V

47A (Tc)

-

4V @ 2.5mA

470 nC @ 10 V

8900 pF @ 25 V

-

100mOhm @ 500mA, 10V

-

Through Hole

T-MAX™ [B2]

TO-247-3 Variant

APT30M36B2FLLG

Microchip Technology

MOSFET N-CH 300V 84A T-MAX

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300 V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6480 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 36mOhm @ 42A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: T-MAX™ [B2]
Package / Case: TO-247-3 Variant

封装: -

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MOSFET (Metal Oxide)

300 V

84A (Tc)

-

5V @ 2.5mA

115 nC @ 10 V

6480 pF @ 25 V

-

36mOhm @ 42A, 10V

-

Through Hole

T-MAX™ [B2]

TO-247-3 Variant

APT6038BFLLG

Microchip Technology

MOSFET N-CH 600V 17A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 380mOhm @ 8.5A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-247 [B]
Package / Case: TO-247-3

封装: -

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MOSFET (Metal Oxide)

600 V

17A (Tc)

-

5V @ 1mA

43 nC @ 10 V

1850 pF @ 25 V

-

380mOhm @ 8.5A, 10V

-

Through Hole

TO-247 [B]

TO-247-3

APT20M34BLLG

Microchip Technology

MOSFET N-CH 200V 74A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-247 [B]
Package / Case: TO-247-3

封装: -

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MOSFET (Metal Oxide)

200 V

74A (Tc)

-

5V @ 1mA

60 nC @ 10 V

3660 pF @ 25 V

-

34mOhm @ 37A, 10V

-

Through Hole

TO-247 [B]

TO-247-3

APT40M70JVR

Microchip Technology

MOSFET N-CH 400V 53A SOT227

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400 V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 495 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8890 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 450W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 26.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227 (ISOTOP®)
Package / Case: SOT-227-4, miniBLOC

封装: -

库存138

MOSFET (Metal Oxide)

400 V

53A (Tc)

10V

4V @ 2.5mA

495 nC @ 10 V

8890 pF @ 25 V

±30V

-

450W (Tc)

70mOhm @ 26.5A, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227 (ISOTOP®)

SOT-227-4, miniBLOC

APT5017BVFRG

Microchip Technology

MOSFET N-CH 500V 30A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-247 [B]
Package / Case: TO-247-3

封装: -

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MOSFET (Metal Oxide)

500 V

30A (Tc)

-

4V @ 1mA

300 nC @ 10 V

5280 pF @ 25 V

-

170mOhm @ 500mA, 10V

-

Through Hole

TO-247 [B]

TO-247-3

APT12057JFLL

Microchip Technology

MOSFET N-CH 1200V 19A ISOTOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5155 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 570mOhm @ 9.5A, 10V
Operating Temperature: -
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC

封装: -

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MOSFET (Metal Oxide)

1200 V

19A (Tc)

-

5V @ 2.5mA

185 nC @ 10 V

5155 pF @ 25 V

-

570mOhm @ 9.5A, 10V

-

Chassis Mount

ISOTOP®

SOT-227-4, miniBLOC

APT5024BFLLG

Microchip Technology

MOSFET N-CH 500V 22A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 240mOhm @ 11A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-247 [B]
Package / Case: TO-247-3

封装: -

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MOSFET (Metal Oxide)

500 V

22A (Tc)

-

5V @ 1mA

43 nC @ 10 V

1900 pF @ 25 V

-

240mOhm @ 11A, 10V

-

Through Hole

TO-247 [B]

TO-247-3

MRH20N56U2SR

Microchip Technology

RH MOSFET 200V SMD 2.0

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

APT10M19SVRG

Microchip Technology

MOSFET N-CH 100V 75A D3PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D3PAK
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

封装: -

库存39

MOSFET (Metal Oxide)

100 V

75A (Tc)

-

4V @ 1mA

300 nC @ 10 V

6120 pF @ 25 V

-

19mOhm @ 500mA, 10V

-

Surface Mount

D3PAK

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

JANSR2N7589U3

Microchip Technology

RH MOSFET 150V U3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 12A, 12V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: U3 (SMD-0.5)
Package / Case: 3-SMD, No Lead

封装: -

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MOSFET (Metal Oxide)

150 V

19A (Tc)

12V

4V @ 1mA

50 nC @ 12 V

2140 pF @ 25 V

±20V

-

75W (Tc)

88mOhm @ 12A, 12V

-55°C ~ 150°C (TJ)

Surface Mount

U3 (SMD-0.5)

3-SMD, No Lead

JANSR2N7587U3

Microchip Technology

RH MOSFET 100V U3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs(th) (Max) @ Id: 4.48V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 19A, 12V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: U3 (SMD-0.5)
Package / Case: 3-SMD, No Lead

封装: -

Request a Quote

MOSFET (Metal Oxide)

100 V

22A (Tc)

12V

4.48V @ 1mA

34 nC @ 12 V

2165 pF @ 25 V

±20V

-

75W (Tc)

38mOhm @ 19A, 12V

-55°C ~ 150°C (TJ)

Surface Mount

U3 (SMD-0.5)

3-SMD, No Lead

JANSR2N7586T1

Microchip Technology

RH MOSFET 250V TO-254AA

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

零件编号	制造商	描述	封装	库存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
APT10026JLL	Microchip Technology	MOSFET N-CH 1000V 30A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7114 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 260mOhm @ 15A, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	封装: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	30A (Tc)	-	5V @ 5mA	267 nC @ 10 V	7114 pF @ 25 V	-	-	-	260mOhm @ 15A, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
APT10M19SVFRG	Microchip Technology	MOSFET N-CH 100V 75A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 19mOhm @ 37.5A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	封装: -	Request a Quote	MOSFET (Metal Oxide)	100 V	75A (Tc)	-	4V @ 1mA	300 nC @ 10 V	6120 pF @ 25 V	-	-	-	19mOhm @ 37.5A, 10V	-	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT10025JVR	Microchip Technology	MOSFET N-CH 1000V 34A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 990 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	封装: -	库存27	MOSFET (Metal Oxide)	1000 V	34A (Tc)	-	4V @ 5mA	990 nC @ 10 V	18000 pF @ 25 V	-	-	-	250mOhm @ 500mA, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
APT6025BVRG	Microchip Technology	MOSFET N-CH 600V 25A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	封装: -	库存99	MOSFET (Metal Oxide)	600 V	25A (Tc)	-	4V @ 1mA	275 nC @ 10 V	5160 pF @ 25 V	-	-	-	250mOhm @ 500mA, 10V	-	Through Hole	TO-247 [B]	TO-247-3
APT6029SLLG	Microchip Technology	MOSFET N-CH 600V 21A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2615 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 290mOhm @ 10.5A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	封装: -	Request a Quote	MOSFET (Metal Oxide)	600 V	21A (Tc)	-	5V @ 1mA	65 nC @ 10 V	2615 pF @ 25 V	-	-	-	290mOhm @ 10.5A, 10V	-	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT6025BLLG	Microchip Technology	MOSFET N-CH 600V 24A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 250mOhm @ 12A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	600 V	24A (Tc)	-	5V @ 1mA	65 nC @ 10 V	2910 pF @ 25 V	-	-	-	250mOhm @ 12A, 10V	-	Through Hole	TO-247 [B]	TO-247-3
APT10050LVRG	Microchip Technology	MOSFET N-CH 1000V 21A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	封装: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	21A (Tc)	-	4V @ 2.5mA	500 nC @ 10 V	7900 pF @ 25 V	-	-	-	500mOhm @ 500mA, 10V	-	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
APT9M100S	Microchip Technology	MOSFET N-CH 1000V 9A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2605 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 335W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	封装: -	库存258	MOSFET (Metal Oxide)	1000 V	9A (Tc)	10V	5V @ 1mA	80 nC @ 10 V	2605 pF @ 25 V	±30V	-	335W (Tc)	1.4Ohm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
MRH25N12U3	Microchip Technology	RH MOSFET _ U3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 7.5A, 12V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U3 (SMD-0.5) Package / Case: 3-SMD, No Lead	封装: -	Request a Quote	MOSFET (Metal Oxide)	250 V	12.4A (Tc)	12V	4V @ 1mA	50 nC @ 12 V	1980 pF @ 25 V	±20V	-	75W (Tc)	210mOhm @ 7.5A, 12V	-55°C ~ 150°C (TJ)	Surface Mount	U3 (SMD-0.5)	3-SMD, No Lead
APT20M16LFLLG	Microchip Technology	MOSFET N-CH 200V 100A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7220 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	封装: -	库存75	MOSFET (Metal Oxide)	200 V	100A (Tc)	-	5V @ 2.5mA	140 nC @ 10 V	7220 pF @ 25 V	-	-	-	16mOhm @ 50A, 10V	-	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
APT12080JVFR	Microchip Technology	MOSFET N-CH 1200V 15A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 485 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 800mOhm @ 7.5A, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	封装: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	15A (Tc)	-	4V @ 2.5mA	485 nC @ 10 V	7800 pF @ 25 V	-	-	-	800mOhm @ 7.5A, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
MRH20N45T1SR	Microchip Technology	RH MOSFET 200V TO-254AA FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
APT12080LVRG	Microchip Technology	MOSFET N-CH 1200V 16A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 485 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (L) Package / Case: TO-264-3, TO-264AA	封装: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	16A (Tc)	10V	4V @ 2.5mA	485 nC @ 10 V	7800 pF @ 25 V	±30V	-	520W (Tc)	800mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (L)	TO-264-3, TO-264AA
APT4014BVFRG	Microchip Technology	MOSFET N-CH 400V 28A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 140mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	400 V	28A (Tc)	-	4V @ 1mA	160 nC @ 10 V	3600 pF @ 25 V	-	-	-	140mOhm @ 500mA, 10V	-	Through Hole	TO-247 [B]	TO-247-3
APT5018SFLLG	Microchip Technology	MOSFET N-CH 500V 27A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2596 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 180mOhm @ 13.5A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	封装: -	Request a Quote	MOSFET (Metal Oxide)	500 V	27A (Tc)	-	5V @ 1mA	58 nC @ 10 V	2596 pF @ 25 V	-	-	-	180mOhm @ 13.5A, 10V	-	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT5010B2VRG	Microchip Technology	MOSFET N-CH 500V 47A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: T-MAX™ [B2] Package / Case: TO-247-3 Variant	封装: -	Request a Quote	MOSFET (Metal Oxide)	500 V	47A (Tc)	-	4V @ 2.5mA	470 nC @ 10 V	8900 pF @ 25 V	-	-	-	100mOhm @ 500mA, 10V	-	Through Hole	T-MAX™ [B2]	TO-247-3 Variant
APT30M36B2FLLG	Microchip Technology	MOSFET N-CH 300V 84A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6480 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 36mOhm @ 42A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: T-MAX™ [B2] Package / Case: TO-247-3 Variant	封装: -	Request a Quote	MOSFET (Metal Oxide)	300 V	84A (Tc)	-	5V @ 2.5mA	115 nC @ 10 V	6480 pF @ 25 V	-	-	-	36mOhm @ 42A, 10V	-	Through Hole	T-MAX™ [B2]	TO-247-3 Variant
APT6038BFLLG	Microchip Technology	MOSFET N-CH 600V 17A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 380mOhm @ 8.5A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	600 V	17A (Tc)	-	5V @ 1mA	43 nC @ 10 V	1850 pF @ 25 V	-	-	-	380mOhm @ 8.5A, 10V	-	Through Hole	TO-247 [B]	TO-247-3
APT20M34BLLG	Microchip Technology	MOSFET N-CH 200V 74A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	200 V	74A (Tc)	-	5V @ 1mA	60 nC @ 10 V	3660 pF @ 25 V	-	-	-	34mOhm @ 37A, 10V	-	Through Hole	TO-247 [B]	TO-247-3
APT40M70JVR	Microchip Technology	MOSFET N-CH 400V 53A SOT227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 495 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8890 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 450W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 26.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 (ISOTOP®) Package / Case: SOT-227-4, miniBLOC	封装: -	库存138	MOSFET (Metal Oxide)	400 V	53A (Tc)	10V	4V @ 2.5mA	495 nC @ 10 V	8890 pF @ 25 V	±30V	-	450W (Tc)	70mOhm @ 26.5A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227 (ISOTOP®)	SOT-227-4, miniBLOC
APT5017BVFRG	Microchip Technology	MOSFET N-CH 500V 30A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	500 V	30A (Tc)	-	4V @ 1mA	300 nC @ 10 V	5280 pF @ 25 V	-	-	-	170mOhm @ 500mA, 10V	-	Through Hole	TO-247 [B]	TO-247-3
APT12057JFLL	Microchip Technology	MOSFET N-CH 1200V 19A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5155 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 570mOhm @ 9.5A, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	封装: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	19A (Tc)	-	5V @ 2.5mA	185 nC @ 10 V	5155 pF @ 25 V	-	-	-	570mOhm @ 9.5A, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
APT5024BFLLG	Microchip Technology	MOSFET N-CH 500V 22A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 240mOhm @ 11A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	500 V	22A (Tc)	-	5V @ 1mA	43 nC @ 10 V	1900 pF @ 25 V	-	-	-	240mOhm @ 11A, 10V	-	Through Hole	TO-247 [B]	TO-247-3
MRH20N56U2SR	Microchip Technology	RH MOSFET 200V SMD 2.0 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
APT10M19SVRG	Microchip Technology	MOSFET N-CH 100V 75A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	封装: -	库存39	MOSFET (Metal Oxide)	100 V	75A (Tc)	-	4V @ 1mA	300 nC @ 10 V	6120 pF @ 25 V	-	-	-	19mOhm @ 500mA, 10V	-	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
JANSR2N7589U3	Microchip Technology	RH MOSFET 150V U3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 88mOhm @ 12A, 12V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U3 (SMD-0.5) Package / Case: 3-SMD, No Lead	封装: -	Request a Quote	MOSFET (Metal Oxide)	150 V	19A (Tc)	12V	4V @ 1mA	50 nC @ 12 V	2140 pF @ 25 V	±20V	-	75W (Tc)	88mOhm @ 12A, 12V	-55°C ~ 150°C (TJ)	Surface Mount	U3 (SMD-0.5)	3-SMD, No Lead
JANSR2N7587U3	Microchip Technology	RH MOSFET 100V U3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4.48V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 19A, 12V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U3 (SMD-0.5) Package / Case: 3-SMD, No Lead	封装: -	Request a Quote	MOSFET (Metal Oxide)	100 V	22A (Tc)	12V	4.48V @ 1mA	34 nC @ 12 V	2165 pF @ 25 V	±20V	-	75W (Tc)	38mOhm @ 19A, 12V	-55°C ~ 150°C (TJ)	Surface Mount	U3 (SMD-0.5)	3-SMD, No Lead
JANSR2N7586T1	Microchip Technology	RH MOSFET 250V TO-254AA FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-