页 279 - Micron Technology Inc. 产品 - 存储器 | 黑森尔电子
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Micron Technology Inc. 产品 - 存储器

记录 10,993
页  279/393
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封装
库存
数量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MT48V8M16LFB4-8 XT:G
Micron Technology Inc.

IC SDRAM 128MBIT 125MHZ 54VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 125MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 7ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: -20°C ~ 75°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-VFBGA
  • Supplier Device Package: 54-VFBGA (8x8)
封装: 54-VFBGA
库存6,432
DRAM
SDRAM - Mobile LPSDR
128Mb (8M x 16)
Parallel
125MHz
15ns
7ns
2.3 V ~ 2.7 V
-20°C ~ 75°C (TA)
Surface Mount
54-VFBGA
54-VFBGA (8x8)
MT48V8M16LFB4-8 IT:G TR
Micron Technology Inc.

IC SDRAM 128MBIT 125MHZ 54VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 125MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 7ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-VFBGA
  • Supplier Device Package: 54-VFBGA (8x8)
封装: 54-VFBGA
库存2,688
DRAM
SDRAM - Mobile LPSDR
128Mb (8M x 16)
Parallel
125MHz
15ns
7ns
2.3 V ~ 2.7 V
-40°C ~ 85°C (TA)
Surface Mount
54-VFBGA
54-VFBGA (8x8)
MT48V8M16LFB4-8 IT:G
Micron Technology Inc.

IC SDRAM 128MBIT 125MHZ 54VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 125MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 7ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-VFBGA
  • Supplier Device Package: 54-VFBGA (8x8)
封装: 54-VFBGA
库存3,088
DRAM
SDRAM - Mobile LPSDR
128Mb (8M x 16)
Parallel
125MHz
15ns
7ns
2.3 V ~ 2.7 V
-40°C ~ 85°C (TA)
Surface Mount
54-VFBGA
54-VFBGA (8x8)
MT48V8M16LFB4-10:G TR
Micron Technology Inc.

IC SDRAM 128MBIT 100MHZ 54VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 7ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-VFBGA
  • Supplier Device Package: 54-VFBGA (8x8)
封装: 54-VFBGA
库存4,400
DRAM
SDRAM - Mobile LPSDR
128Mb (8M x 16)
Parallel
100MHz
15ns
7ns
2.3 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
54-VFBGA
54-VFBGA (8x8)
MT48V8M16LFB4-10:G
Micron Technology Inc.

IC SDRAM 128MBIT 100MHZ 54VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 7ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-VFBGA
  • Supplier Device Package: 54-VFBGA (8x8)
封装: 54-VFBGA
库存7,280
DRAM
SDRAM - Mobile LPSDR
128Mb (8M x 16)
Parallel
100MHz
15ns
7ns
2.3 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
54-VFBGA
54-VFBGA (8x8)
MT48V8M16LFB4-10 IT:G TR
Micron Technology Inc.

IC SDRAM 128MBIT 100MHZ 54VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 7ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-VFBGA
  • Supplier Device Package: 54-VFBGA (8x8)
封装: 54-VFBGA
库存2,784
DRAM
SDRAM - Mobile LPSDR
128Mb (8M x 16)
Parallel
100MHz
15ns
7ns
2.3 V ~ 2.7 V
-40°C ~ 85°C (TA)
Surface Mount
54-VFBGA
54-VFBGA (8x8)
MT48V8M16LFB4-10 IT:G
Micron Technology Inc.

IC SDRAM 128MBIT 100MHZ 54VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 7ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-VFBGA
  • Supplier Device Package: 54-VFBGA (8x8)
封装: 54-VFBGA
库存6,592
DRAM
SDRAM - Mobile LPSDR
128Mb (8M x 16)
Parallel
100MHz
15ns
7ns
2.3 V ~ 2.7 V
-40°C ~ 85°C (TA)
Surface Mount
54-VFBGA
54-VFBGA (8x8)
MT48V4M32LFF5-8:G TR
Micron Technology Inc.

IC SDRAM 128MBIT 125MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 125MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 7ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
封装: 90-VFBGA
库存5,552
DRAM
SDRAM - Mobile LPSDR
128Mb (4M x 32)
Parallel
125MHz
15ns
7ns
2.3 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
MT48V4M32LFF5-8:G
Micron Technology Inc.

IC SDRAM 128MBIT 125MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 125MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 7ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
封装: 90-VFBGA
库存4,640
DRAM
SDRAM - Mobile LPSDR
128Mb (4M x 32)
Parallel
125MHz
15ns
7ns
2.3 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
MT48V4M32LFF5-8 IT:G TR
Micron Technology Inc.

IC SDRAM 128MBIT 125MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 125MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 7ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
封装: 90-VFBGA
库存6,784
DRAM
SDRAM - Mobile LPSDR
128Mb (4M x 32)
Parallel
125MHz
15ns
7ns
2.3 V ~ 2.7 V
-40°C ~ 85°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
MT48V4M32LFF5-8 IT:G
Micron Technology Inc.

IC SDRAM 128MBIT 125MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 125MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 7ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
封装: 90-VFBGA
库存3,600
DRAM
SDRAM - Mobile LPSDR
128Mb (4M x 32)
Parallel
125MHz
15ns
7ns
2.3 V ~ 2.7 V
-40°C ~ 85°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
MT48V4M32LFF5-10:G
Micron Technology Inc.

IC SDRAM 128MBIT 100MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 7ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
封装: 90-VFBGA
库存2,768
DRAM
SDRAM - Mobile LPSDR
128Mb (4M x 32)
Parallel
100MHz
15ns
7ns
2.3 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
MT48V4M32LFF5-10 IT:G
Micron Technology Inc.

IC SDRAM 128MBIT 100MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 7ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
封装: 90-VFBGA
库存3,600
DRAM
SDRAM - Mobile LPSDR
128Mb (4M x 32)
Parallel
100MHz
15ns
7ns
2.3 V ~ 2.7 V
-40°C ~ 85°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
MT48V4M32LFB5-8:G TR
Micron Technology Inc.

IC SDRAM 128MBIT 125MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 125MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 7ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
封装: 90-VFBGA
库存5,904
DRAM
SDRAM - Mobile LPSDR
128Mb (4M x 32)
Parallel
125MHz
15ns
7ns
2.3 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
hot MT48V4M32LFB5-8:G
Micron Technology Inc.

IC SDRAM 128MBIT 125MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 125MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 7ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
封装: 90-VFBGA
库存6,576
DRAM
SDRAM - Mobile LPSDR
128Mb (4M x 32)
Parallel
125MHz
15ns
7ns
2.3 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
MT48V4M32LFB5-8 XT:G TR
Micron Technology Inc.

IC SDRAM 128MBIT 125MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 125MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 7ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: -20°C ~ 75°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
封装: 90-VFBGA
库存3,344
DRAM
SDRAM - Mobile LPSDR
128Mb (4M x 32)
Parallel
125MHz
15ns
7ns
2.3 V ~ 2.7 V
-20°C ~ 75°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
MT48V4M32LFB5-8 XT:G
Micron Technology Inc.

IC SDRAM 128MBIT 125MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 125MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 7ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: -20°C ~ 75°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
封装: 90-VFBGA
库存7,472
DRAM
SDRAM - Mobile LPSDR
128Mb (4M x 32)
Parallel
125MHz
15ns
7ns
2.3 V ~ 2.7 V
-20°C ~ 75°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
MT48V4M32LFB5-8 IT:G TR
Micron Technology Inc.

IC SDRAM 128MBIT 125MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 125MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 7ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
封装: 90-VFBGA
库存6,896
DRAM
SDRAM - Mobile LPSDR
128Mb (4M x 32)
Parallel
125MHz
15ns
7ns
2.3 V ~ 2.7 V
-40°C ~ 85°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
MT48V4M32LFB5-8 IT:G
Micron Technology Inc.

IC SDRAM 128MBIT 125MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 125MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 7ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
封装: 90-VFBGA
库存6,304
DRAM
SDRAM - Mobile LPSDR
128Mb (4M x 32)
Parallel
125MHz
15ns
7ns
2.3 V ~ 2.7 V
-40°C ~ 85°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
MT48V4M32LFB5-10:G TR
Micron Technology Inc.

IC SDRAM 128MBIT 100MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 7ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
封装: 90-VFBGA
库存3,696
DRAM
SDRAM - Mobile LPSDR
128Mb (4M x 32)
Parallel
100MHz
15ns
7ns
2.3 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
MT48V4M32LFB5-10:G
Micron Technology Inc.

IC SDRAM 128MBIT 100MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 7ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
封装: 90-VFBGA
库存5,376
DRAM
SDRAM - Mobile LPSDR
128Mb (4M x 32)
Parallel
100MHz
15ns
7ns
2.3 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
MT48V4M32LFB5-10 IT:G TR
Micron Technology Inc.

IC SDRAM 128MBIT 100MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 7ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
封装: 90-VFBGA
库存6,864
DRAM
SDRAM - Mobile LPSDR
128Mb (4M x 32)
Parallel
100MHz
15ns
7ns
2.3 V ~ 2.7 V
-40°C ~ 85°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
MT48V4M32LFB5-10 IT:G
Micron Technology Inc.

IC SDRAM 128MBIT 100MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 7ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
封装: 90-VFBGA
库存6,832
DRAM
SDRAM - Mobile LPSDR
128Mb (4M x 32)
Parallel
100MHz
15ns
7ns
2.3 V ~ 2.7 V
-40°C ~ 85°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
MT48LC8M8A2TG-7E L:G TR
Micron Technology Inc.

IC SDRAM 64MBIT 133MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mb (8M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 14ns
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
封装: 54-TSOP (0.400", 10.16mm Width)
库存3,360
DRAM
SDRAM
64Mb (8M x 8)
Parallel
133MHz
14ns
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
MT48LC8M8A2TG-7E L:G
Micron Technology Inc.

IC SDRAM 64MBIT 133MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mb (8M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 14ns
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
封装: 54-TSOP (0.400", 10.16mm Width)
库存3,072
DRAM
SDRAM
64Mb (8M x 8)
Parallel
133MHz
14ns
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
MT48LC8M8A2TG-75 L:G
Micron Technology Inc.

IC SDRAM 64MBIT 133MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mb (8M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
封装: 54-TSOP (0.400", 10.16mm Width)
库存7,344
DRAM
SDRAM
64Mb (8M x 8)
Parallel
133MHz
15ns
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
MT48LC8M8A2P-7E:G
Micron Technology Inc.

IC SDRAM 64MBIT 133MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mb (8M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 14ns
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
封装: 54-TSOP (0.400", 10.16mm Width)
库存6,640
DRAM
SDRAM
64Mb (8M x 8)
Parallel
133MHz
14ns
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
MT48LC8M8A2P-7E L:G TR
Micron Technology Inc.

IC SDRAM 64MBIT 133MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mb (8M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 14ns
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
封装: 54-TSOP (0.400", 10.16mm Width)
库存4,528
DRAM
SDRAM
64Mb (8M x 8)
Parallel
133MHz
14ns
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II