Micron Technology Inc. 产品

MT29F256G08AMCBBK7-6:B TR

Micron Technology Inc.

IC FLASH 256GBIT 167MHZ VLGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 256Gb (32G x 8)
• Memory Interface: Parallel
• Clock Frequency: 167MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

N25Q032A13ESE40E

Micron Technology Inc.

IC FLASH 32MBIT 108MHZ 8SO

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 32Mb (8M x 4)
• Memory Interface: SPI
• Clock Frequency: 108MHz
• Write Cycle Time - Word, Page: 8ms, 5ms
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.209", 5.30mm Width)
• Supplier Device Package: 8-SO W

封装: 8-SOIC (0.209", 5.30mm Width)

MT41K256M16HA-125 IT:E TR

Micron Technology Inc.

IC SDRAM 4GBIT 800MHZ 96FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3L
• Memory Size: 4Gb (256M x 16)
• Memory Interface: Parallel
• Clock Frequency: 800MHz
• Write Cycle Time - Word, Page: -
• Access Time: 13.75ns
• Voltage - Supply: 1.283 V ~ 1.45 V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-FBGA (9x14)

封装: 96-TFBGA

MT29F1G16ABBEAMD-IT:E TR

Micron Technology Inc.

IC FLASH 1GBIT 25NS 130VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 1Gb (64M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 130-VFBGA
• Supplier Device Package: 130-VFBGA (8x9)

封装: 130-VFBGA

MT42L128M64D4LD-3 IT:A

Micron Technology Inc.

IC SDRAM 8GBIT 333MHZ 220FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR2
• Memory Size: 8Gb (128M x 64)
• Memory Interface: Parallel
• Clock Frequency: 333MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.3 V
• Operating Temperature: -25°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 220-VFBGA
• Supplier Device Package: 220-FBGA (14x14)

封装: 220-VFBGA

MT41J128M16HA-125G:D

Micron Technology Inc.

IC SDRAM 2GBIT 800MHZ 96FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3
• Memory Size: 2Gb (128M x 16)
• Memory Interface: Parallel
• Clock Frequency: 800MHz
• Write Cycle Time - Word, Page: -
• Access Time: 13.75ns
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-FBGA (9x14)

封装: 96-TFBGA

M29F010B45K6E

Micron Technology Inc.

IC FLASH 1MBIT 45NS 32PLCC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 1Mb (128K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 45ns
• Access Time: 45ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 32-LCC (J-Lead)
• Supplier Device Package: 32-PLCC (11.35x13.89)

封装: 32-LCC (J-Lead)

MT48LC8M8A2P-75 L:G

Micron Technology Inc.

IC SDRAM 64MBIT 133MHZ 54TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 64Mb (8M x 8)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 54-TSOP II

封装: 54-TSOP (0.400", 10.16mm Width)

MT46V16M16P-6T:F

Micron Technology Inc.

IC SDRAM 256MBIT 167MHZ 66TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 256Mb (16M x 16)
• Memory Interface: Parallel
• Clock Frequency: 167MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 700ps
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 66-TSSOP (0.400", 10.16mm Width)
• Supplier Device Package: 66-TSOP

封装: 66-TSSOP (0.400", 10.16mm Width)

MT28F320J3BS-11 MET TR

Micron Technology Inc.

IC FLASH 32MBIT 110NS 64FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH
• Memory Size: 32Mb (4M x 8, 2M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 110ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-FBGA
• Supplier Device Package: 64-FBGA (10x13)

封装: 64-FBGA

MT29F2T08CTCCBJ7-6R:C TR

Micron Technology Inc.

IC FLASH 2TBIT 167MHZ 152LBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 2Tb (256G x 8)
• Memory Interface: Parallel
• Clock Frequency: 167MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT48LC4M32B2P-6A:L TR

Micron Technology Inc.

IC SDRAM 128MBIT 166MHZ 86TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 128Mb (4M x 32)
• Memory Interface: Parallel
• Clock Frequency: 167MHz
• Write Cycle Time - Word, Page: 12ns
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 86-TFSOP (0.400", 10.16mm Width)
• Supplier Device Package: 86-TSOP II

封装: 86-TFSOP (0.400", 10.16mm Width)

PC28F640J3F75B TR

Micron Technology Inc.

IC FLASH 64MBIT 75NS 64EASYBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mb (8M x 8, 4M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 75ns
• Access Time: 75ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-TBGA
• Supplier Device Package: 64-EasyBGA (10x13)

封装: 64-TBGA

MTFC32GAOALEA-WT ES

Micron Technology Inc.

EMCP 256G

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT53D768M64D8WF-053 WT:D TR

Micron Technology Inc.

IC DRAM 48G 1866MHZ FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 48Gb (768M x 64)
• Memory Interface: -
• Clock Frequency: 1866MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.1V
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT29F4G16ABAFAWP-ITES:F TR

Micron Technology Inc.

IC FLASH 4G PARALLEL TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 4Gb (256M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT29F256G08AMEBBH7-12:B TR

Micron Technology Inc.

IC FLASH 256G PARALLEL 83MHZ

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 256Gb (32G x 8)
• Memory Interface: Parallel
• Clock Frequency: 83MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT53D512M32D2DS-053-AAT-ES-D

Micron Technology Inc.

IC DRAM 16GBIT 1.866GHZ 200WFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 16Gbit
• Memory Interface: -
• Clock Frequency: 1.866 GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.1V
• Operating Temperature: -40°C ~ 105°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 200-WFBGA
• Supplier Device Package: 200-WFBGA (10x14.5)

封装: -

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MT30AZZZCD90TKXM-031-W-20T

Micron Technology Inc.

MODULE

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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MT62F1G64D4EK-023-FAIT-C

Micron Technology Inc.

LPDDR5 64GBIT 64 441/441 TFBGA 4

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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MT53D384M32D2DS-046-AIT-E-TR

Micron Technology Inc.

IC DRAM 12GBIT 2.133GHZ 200WFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 12Gbit
• Memory Interface: -
• Clock Frequency: 2.133 GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.1V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 200-WFBGA
• Supplier Device Package: 200-WFBGA (10x14.5)

封装: -

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MT62F3G32D8DV-023-AAT-B

Micron Technology Inc.

LPDDR5 96G 3GX32 FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR5
• Memory Size: 96Gbit
• Memory Interface: Parallel
• Clock Frequency: 4.266 GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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MT58L64L32FT-10

Micron Technology Inc.

IC SRAM 2MBIT PARALLEL 100TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM
• Memory Size: 2Mbit
• Memory Interface: Parallel
• Clock Frequency: 66 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 10 ns
• Voltage - Supply: 3.135V ~ 3.6V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x20.1)

封装: -

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MT29F512G08EBLEEJ4-R-E

Micron Technology Inc.

TLC 512G 64GX8 VBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND (TLC)
• Memory Size: 512Gbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.6V ~ 3.6V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 132-VBGA
• Supplier Device Package: 132-VBGA (12x18)

封装: -

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MT40A1G16TD-062E-AUT-F

Micron Technology Inc.

DDR4 16G 1GX16 FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR4
• Memory Size: 16Gbit
• Memory Interface: POD
• Clock Frequency: 1.6 GHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 19 ns
• Voltage - Supply: 1.14V ~ 1.26V
• Operating Temperature: -40°C ~ 125°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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MTFC32GAPALGT-AAT-TR

Micron Technology Inc.

IC FLASH 256GBIT MMC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 256Gbit
• Memory Interface: MMC
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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MT29VZZZAD8FQKSL-046-W-12H-TR

Micron Technology Inc.

UMCP 544G

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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MT53E512M32D1ZW-046BIT-B-TR

Micron Technology Inc.

LPDDR4 16GBIT 32 200/264 TFBGA 1

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 200-TFBGA
• Supplier Device Package: 200-TFBGA (10x14.5)

封装: -

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