页 4 - Microsemi Corporation 产品 - 晶体管 - UGBT，MOSFET - 单 | 黑森尔电子
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Microsemi Corporation 产品 - 晶体管 - UGBT，MOSFET - 单

记录 146
页  4/6
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
APT40GP60SG
Microsemi Corporation

IGBT 600V 100A 543W D3PAK

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
  • Power - Max: 543W
  • Switching Energy: 385µJ (on), 352µJ (off)
  • Input Type: Standard
  • Gate Charge: 135nC
  • Td (on/off) @ 25°C: 20ns/64ns
  • Test Condition: 400V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: D3 [S]
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
库存4,928
600V
100A
160A
2.7V @ 15V, 40A
543W
385µJ (on), 352µJ (off)
Standard
135nC
20ns/64ns
400V, 40A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
D3 [S]
hot APT40GP60BG
Microsemi Corporation

IGBT 600V 100A 543W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
  • Power - Max: 543W
  • Switching Energy: 385µJ (on), 352µJ (off)
  • Input Type: Standard
  • Gate Charge: 135nC
  • Td (on/off) @ 25°C: 20ns/64ns
  • Test Condition: 400V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封装: TO-247-3
库存5,120
600V
100A
160A
2.7V @ 15V, 40A
543W
385µJ (on), 352µJ (off)
Standard
135nC
20ns/64ns
400V, 40A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
hot APT30GP60BG
Microsemi Corporation

IGBT 600V 100A 463W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
  • Power - Max: 463W
  • Switching Energy: 260µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: 13ns/55ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封装: TO-247-3
库存8,664
600V
100A
100A
2.7V @ 15V, 30A
463W
260µJ (on), 250µJ (off)
Standard
90nC
13ns/55ns
400V, 30A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT25GP120BG
Microsemi Corporation

IGBT 1200V 69A 417W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 69A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
  • Power - Max: 417W
  • Switching Energy: 500µJ (on), 438µJ (off)
  • Input Type: Standard
  • Gate Charge: 110nC
  • Td (on/off) @ 25°C: 12ns/70ns
  • Test Condition: 600V, 25A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封装: TO-247-3
库存4,128
1200V
69A
90A
3.9V @ 15V, 25A
417W
500µJ (on), 438µJ (off)
Standard
110nC
12ns/70ns
600V, 25A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT50GS60BRDLG
Microsemi Corporation

IGBT 600V 93A 415W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 93A
  • Current - Collector Pulsed (Icm): 195A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
  • Power - Max: 415W
  • Switching Energy: 755µJ (off)
  • Input Type: Standard
  • Gate Charge: 235nC
  • Td (on/off) @ 25°C: 16ns/225ns
  • Test Condition: 400V, 50A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存4,720
600V
93A
195A
3.15V @ 15V, 50A
415W
755µJ (off)
Standard
235nC
16ns/225ns
400V, 50A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
APT30GP60LDLG
Microsemi Corporation

IGBT 600V 100A 463W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
  • Power - Max: 463W
  • Switching Energy: 260µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: 13ns/55ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
封装: TO-264-3, TO-264AA
库存6,256
600V
100A
120A
2.7V @ 15V, 30A
463W
260µJ (on), 250µJ (off)
Standard
90nC
13ns/55ns
400V, 30A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
APT50GR120L
Microsemi Corporation

IGBT 1200V 117A 694W TO264

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 117A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 50A
  • Power - Max: 694W
  • Switching Energy: 2.14mJ (on), 1.48mJ (off)
  • Input Type: Standard
  • Gate Charge: 445nC
  • Td (on/off) @ 25°C: 28ns/237ns
  • Test Condition: 600V, 50A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
封装: TO-264-3, TO-264AA
库存4,512
1200V
117A
200A
3.2V @ 15V, 50A
694W
2.14mJ (on), 1.48mJ (off)
Standard
445nC
28ns/237ns
600V, 50A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
APT30GP60B2DLG
Microsemi Corporation

IGBT 600V 100A 463W TMAX

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
  • Power - Max: 463W
  • Switching Energy: 260µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: 13ns/55ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: T-MAX?
封装: TO-247-3
库存2,832
600V
100A
120A
2.7V @ 15V, 30A
463W
260µJ (on), 250µJ (off)
Standard
90nC
13ns/55ns
400V, 30A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
T-MAX?
APT25GN120B2DQ2G
Microsemi Corporation

IGBT 1200V 67A 272W TMAX

  • IGBT Type: NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 67A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 272W
  • Switching Energy: 2.15µJ (off)
  • Input Type: Standard
  • Gate Charge: 155nC
  • Td (on/off) @ 25°C: 22ns/280ns
  • Test Condition: 800V, 25A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: -
封装: TO-247-3 Variant
库存5,248
1200V
67A
75A
2.1V @ 15V, 25A
272W
2.15µJ (off)
Standard
155nC
22ns/280ns
800V, 25A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
APT45GR65SSCD10
Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 118A
  • Current - Collector Pulsed (Icm): 224A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A
  • Power - Max: 543W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 203nC
  • Td (on/off) @ 25°C: 15ns/100ns
  • Test Condition: 433V, 45A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): 80ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D3Pak
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存6,432
650V
118A
224A
2.4V @ 15V, 45A
543W
-
Standard
203nC
15ns/100ns
433V, 45A, 4.3 Ohm, 15V
80ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D3Pak
hot APT25GP90BDQ1G
Microsemi Corporation

IGBT 900V 72A 417W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 72A
  • Current - Collector Pulsed (Icm): 110A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
  • Power - Max: 417W
  • Switching Energy: 370µJ (off)
  • Input Type: Standard
  • Gate Charge: 110nC
  • Td (on/off) @ 25°C: 13ns/55ns
  • Test Condition: 600V, 40A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封装: TO-247-3
库存5,504
900V
72A
110A
3.9V @ 15V, 25A
417W
370µJ (off)
Standard
110nC
13ns/55ns
600V, 40A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT25GP90BG
Microsemi Corporation

IGBT 900V 72A 417W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 72A
  • Current - Collector Pulsed (Icm): 110A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
  • Power - Max: 417W
  • Switching Energy: 370µJ (off)
  • Input Type: Standard
  • Gate Charge: 110nC
  • Td (on/off) @ 25°C: 13ns/55ns
  • Test Condition: 600V, 25A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封装: TO-247-3
库存5,904
900V
72A
110A
3.9V @ 15V, 25A
417W
370µJ (off)
Standard
110nC
13ns/55ns
600V, 25A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT45GR65BSCD10
Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 118A
  • Current - Collector Pulsed (Icm): 224A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A
  • Power - Max: 543W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 203nC
  • Td (on/off) @ 25°C: 15ns/100ns
  • Test Condition: 433V, 45A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): 80ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存5,088
650V
118A
224A
2.4V @ 15V, 45A
543W
-
Standard
203nC
15ns/100ns
433V, 45A, 4.3 Ohm, 15V
80ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
APT70GR65B2DU40
Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 134A
  • Current - Collector Pulsed (Icm): 280A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 70A
  • Power - Max: 595W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 305nC
  • Td (on/off) @ 25°C: 18ns/170ns
  • Test Condition: 433V, 70A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: T-MAX? [B2]
封装: TO-247-3
库存4,752
650V
134A
280A
2.4V @ 15V, 70A
595W
-
Standard
305nC
18ns/170ns
433V, 70A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
T-MAX? [B2]
APT15GP60BDLG
Microsemi Corporation

IGBT 600V 56A 250W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 56A
  • Current - Collector Pulsed (Icm): 65A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
  • Power - Max: 250W
  • Switching Energy: 130µJ (on), 121µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 8ns/29ns
  • Test Condition: 400V, 15A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存6,960
600V
56A
65A
2.7V @ 15V, 15A
250W
130µJ (on), 121µJ (off)
Standard
55nC
8ns/29ns
400V, 15A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
APT54GA60BD30
Microsemi Corporation

IGBT 600V 96A 416W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 96A
  • Current - Collector Pulsed (Icm): 161A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
  • Power - Max: 416W
  • Switching Energy: 534µJ (on), 466µJ (off)
  • Input Type: Standard
  • Gate Charge: 28nC
  • Td (on/off) @ 25°C: 17ns/112ns
  • Test Condition: 400V, 32A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封装: TO-247-3
库存2,544
600V
96A
161A
2.5V @ 15V, 32A
416W
534µJ (on), 466µJ (off)
Standard
28nC
17ns/112ns
400V, 32A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT15GP90BG
Microsemi Corporation

IGBT 900V 43A 250W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 43A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 15A
  • Power - Max: 250W
  • Switching Energy: 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 60nC
  • Td (on/off) @ 25°C: 9ns/33ns
  • Test Condition: 600V, 15A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封装: TO-247-3
库存3,520
900V
43A
60A
3.9V @ 15V, 15A
250W
200µJ (off)
Standard
60nC
9ns/33ns
600V, 15A, 4.3 Ohm, 15V
-
-
Through Hole
TO-247-3
TO-247 [B]
APT13GP120BDQ1G
Microsemi Corporation

IGBT 1200V 41A 250W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 41A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A
  • Power - Max: 250W
  • Switching Energy: 115µJ (on), 165µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 9ns/28ns
  • Test Condition: 600V, 13A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封装: TO-247-3
库存4,688
1200V
41A
50A
3.9V @ 15V, 13A
250W
115µJ (on), 165µJ (off)
Standard
55nC
9ns/28ns
600V, 13A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT30GS60BRDLG
Microsemi Corporation

IGBT 600V 54A 250W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 54A
  • Current - Collector Pulsed (Icm): 113A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 570µJ (off)
  • Input Type: Standard
  • Gate Charge: 145nC
  • Td (on/off) @ 25°C: 16ns/360ns
  • Test Condition: 400V, 30A, 9.1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存6,480
600V
54A
113A
3.15V @ 15V, 30A
250W
570µJ (off)
Standard
145nC
16ns/360ns
400V, 30A, 9.1 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
APT50GS60BRG
Microsemi Corporation

IGBT 600V 93A 415W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 93A
  • Current - Collector Pulsed (Icm): 195A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
  • Power - Max: 415W
  • Switching Energy: 755µJ (off)
  • Input Type: Standard
  • Gate Charge: 235nC
  • Td (on/off) @ 25°C: 16ns/225ns
  • Test Condition: 400V, 50A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封装: TO-247-3
库存2,896
600V
93A
195A
3.15V @ 15V, 50A
415W
755µJ (off)
Standard
235nC
16ns/225ns
400V, 50A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT44GA60BD30
Microsemi Corporation

IGBT 600V 78A 337W TO-247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 78A
  • Current - Collector Pulsed (Icm): 130A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A
  • Power - Max: 337W
  • Switching Energy: 409µJ (on), 258µJ (off)
  • Input Type: Standard
  • Gate Charge: 128nC
  • Td (on/off) @ 25°C: 16ns/84ns
  • Test Condition: 400V, 26A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封装: TO-247-3
库存4,560
600V
78A
130A
2.5V @ 15V, 26A
337W
409µJ (on), 258µJ (off)
Standard
128nC
16ns/84ns
400V, 26A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT45GR65B2DU30
Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 118A
  • Current - Collector Pulsed (Icm): 224A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A
  • Power - Max: 543W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 203nC
  • Td (on/off) @ 25°C: 15ns/100ns
  • Test Condition: 433V, 45A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): 80ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: T-MAX? [B2]
封装: TO-247-3
库存2,800
650V
118A
224A
2.4V @ 15V, 45A
543W
-
Standard
203nC
15ns/100ns
433V, 45A, 4.3 Ohm, 15V
80ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
T-MAX? [B2]
APT44GA60B
Microsemi Corporation

IGBT 600V 78A 337W TO-247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 78A
  • Current - Collector Pulsed (Icm): 130A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A
  • Power - Max: 337W
  • Switching Energy: 409µJ (on), 258µJ (off)
  • Input Type: Standard
  • Gate Charge: 128nC
  • Td (on/off) @ 25°C: 16ns/84ns
  • Test Condition: 400V, 26A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封装: TO-247-3
库存6,060
600V
78A
130A
2.5V @ 15V, 26A
337W
409µJ (on), 258µJ (off)
Standard
128nC
16ns/84ns
400V, 26A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT30GT60BRG
Microsemi Corporation

IGBT 600V 64A 250W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 64A
  • Current - Collector Pulsed (Icm): 110A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 525µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 145nC
  • Td (on/off) @ 25°C: 12ns/225ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封装: TO-247-3
库存5,872
600V
64A
110A
2.5V @ 15V, 30A
250W
525µJ (on), 600µJ (off)
Standard
145nC
12ns/225ns
400V, 30A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT15GN120BDQ1G
Microsemi Corporation

IGBT 1200V 45A 195W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 45A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 195W
  • Switching Energy: 410µJ (on), 950µJ (off)
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: 10ns/150ns
  • Test Condition: 800V, 15A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封装: TO-247-3
库存6,624
1200V
45A
45A
2.1V @ 15V, 15A
195W
410µJ (on), 950µJ (off)
Standard
90nC
10ns/150ns
800V, 15A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT13GP120BG
Microsemi Corporation

IGBT 1200V 41A 250W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 41A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A
  • Power - Max: 250W
  • Switching Energy: 115µJ (on), 165µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 9ns/28ns
  • Test Condition: 600V, 13A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封装: TO-247-3
库存6,944
1200V
41A
50A
3.9V @ 15V, 13A
250W
115µJ (on), 165µJ (off)
Standard
55nC
9ns/28ns
600V, 13A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT15GT60BRG
Microsemi Corporation

IGBT 600V 42A 184W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 42A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: 184W
  • Switching Energy: 150µJ (on), 215µJ (off)
  • Input Type: Standard
  • Gate Charge: 75nC
  • Td (on/off) @ 25°C: 6ns/105ns
  • Test Condition: 400V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封装: TO-247-3
库存6,880
600V
42A
45A
2.5V @ 15V, 15A
184W
150µJ (on), 215µJ (off)
Standard
75nC
6ns/105ns
400V, 15A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
hot APT15GP60BDQ1G
Microsemi Corporation

IGBT 600V 56A 250W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 56A
  • Current - Collector Pulsed (Icm): 65A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
  • Power - Max: 250W
  • Switching Energy: 130µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 8ns/29ns
  • Test Condition: 400V, 15A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封装: TO-247-3
库存5,104
600V
56A
65A
2.7V @ 15V, 15A
250W
130µJ (on), 120µJ (off)
Standard
55nC
8ns/29ns
400V, 15A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]