Nexperia USA Inc. 产品

BUK9M14-40EX

Nexperia USA Inc.

MOSFET N-CH 40V 44A LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1211pF @ 25V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 55W (Tc)
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK33
• Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)

封装: SOT-1210, 8-LFPAK33 (5-Lead)

PMBTA14,215

Nexperia USA Inc.

TRANS NPN DARL 30V 0.5A SOT23

• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 30V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 125MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

封装: TO-236-3, SC-59, SOT-23-3

PDTA143XTVL

Nexperia USA Inc.

PDTA143XT/SOT23/TO-236AB

• Transistor Type: -
• Current - Collector (Ic) (Max): -
• Voltage - Collector Emitter Breakdown (Max): -
• Resistor - Base (R1) (Ohms): -
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Vce Saturation (Max) @ Ib, Ic: -
• Current - Collector Cutoff (Max): -
• Frequency - Transition: -
• Power - Max: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

BZX79-C4V7,113

Nexperia USA Inc.

DIODE ZENER 4.7V 400MW ALF2

• Voltage - Zener (Nom) (Vz): 4.7V
• Tolerance: ±5%
• Power - Max: 400mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 200°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: ALF2

封装: DO-204AH, DO-35, Axial

BZB84-B4V3,215

Nexperia USA Inc.

DIODE ZENER ARRAY 4.3V SOT23

• Configuration: 1 Pair Common Anode
• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±2%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

封装: TO-236-3, SC-59, SOT-23-3

BAS45A,133

Nexperia USA Inc.

DIODE GEN PURP 125V 250MA DO34

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 125V
• Current - Average Rectified (Io): 250mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5µs
• Current - Reverse Leakage @ Vr: 1nA @ 125V
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Supplier Device Package: DO-34
• Operating Temperature - Junction: 175°C (Max)

封装: DO-204AG, DO-34, Axial

BAS40XY,115

Nexperia USA Inc.

DIODE ARRAY SCHOTTKY 40V 6TSSOP

• Diode Configuration: 2 Pair Series Connection
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io) (per Diode): 120mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 40V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: 6-TSSOP

封装: 6-TSSOP, SC-88, SOT-363

HEF4070BT-Q100J

Nexperia USA Inc.

IC GATE XOR 4CH 2-INP 14-SO

• Logic Type: XOR (Exclusive OR)
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 3 V ~ 15 V
• Current - Quiescent (Max): 4µA
• Current - Output High, Low: 3mA, 3mA
• Logic Level - Low: 1.5 V ~ 4 V
• Logic Level - High: 3.5 V ~ 11 V
• Max Propagation Delay @ V, Max CL: 55ns @ 15V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SO
• Package / Case: 14-SOIC (0.154", 3.90mm Width)

封装: 14-SOIC (0.154", 3.90mm Width)

74LVC3GU04GN,115

Nexperia USA Inc.

IC BUFFER TRIPLE 1STAGE 8XSON

• Logic Type: Inverter
• Number of Circuits: 3
• Number of Inputs: 3
• Features: -
• Voltage - Supply: 1.65 V ~ 5.5 V
• Current - Quiescent (Max): 4µA
• Current - Output High, Low: 32mA, 32mA
• Logic Level - Low: -
• Logic Level - High: -
• Max Propagation Delay @ V, Max CL: 3ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-XSON, SOT1116 (1.2x1)
• Package / Case: 8-XFDFN

封装: 8-XFDFN

74LVC2G14GF,132

Nexperia USA Inc.

IC DUAL INV SCHMITT-TRIG 6-XSON

• Logic Type: Inverter
• Number of Circuits: 2
• Number of Inputs: 2
• Features: Schmitt Trigger
• Voltage - Supply: 1.65 V ~ 5.5 V
• Current - Quiescent (Max): 4µA
• Current - Output High, Low: 32mA, 32mA
• Logic Level - Low: 0.25 V ~ 1.2 V
• Logic Level - High: 1.5 V ~ 3.6 V
• Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 6-XSON (1x1)
• Package / Case: 6-XFDFN

封装: 6-XFDFN

74LVC1G08GM,132

Nexperia USA Inc.

IC GATE AND 1CH 2-INP 6-XSON

• Logic Type: AND Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 1.65 V ~ 5.5 V
• Current - Quiescent (Max): 4µA
• Current - Output High, Low: 32mA, 32mA
• Logic Level - Low: 0.7 V ~ 0.8 V
• Logic Level - High: 1.7 V ~ 2 V
• Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 6-XSON, SOT886 (1.45x1)
• Package / Case: 6-XFDFN

封装: 6-XFDFN

74HC4520D-Q100J

Nexperia USA Inc.

IC DUAL 4BIT SYNC BINARY 16SO

• Logic Type: Binary Counter
• Direction: Up
• Number of Elements: 2
• Number of Bits per Element: 4
• Reset: Asynchronous
• Timing: Synchronous
• Count Rate: 69MHz
• Trigger Type: Positive, Negative
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SO

封装: 16-SOIC (0.154", 3.90mm Width)

74AUP2G240GM,125

Nexperia USA Inc.

IC BUFFER/LINEDVR DUAL 8XQFN

• Logic Type: Buffer, Inverting
• Number of Elements: 2
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 4mA, 4mA
• Voltage - Supply: 0.8 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-XFQFN Exposed Pad
• Supplier Device Package: 8-XQFN (1.6x1.6)

封装: 8-XFQFN Exposed Pad

74LVC3G17GF,115

Nexperia USA Inc.

IC SCMITT TRIG TRPL NONINV 8XSON

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 3
• Number of Bits per Element: 1
• Input Type: Schmitt Trigger
• Output Type: Push-Pull
• Current - Output High, Low: 32mA, 32mA
• Voltage - Supply: 1.65 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-XFDFN
• Supplier Device Package: 8-XSON, SOT1089 (1.35x1)

封装: 8-XFDFN

PMCM650CUNEZ

Nexperia USA Inc.

MOSFET 2N-CH 6WLCSP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 556mW (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-XFBGA, WLCSP
• Supplier Device Package: 6-WLCSP (1.48x0.98)

封装: -

BZX585-B12-QX

Nexperia USA Inc.

BZX585-B12-Q/SOD523/SC-79

• Voltage - Zener (Nom) (Vz): 12 V
• Tolerance: ±2%
• Power - Max: 300 mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 8 V
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523

封装: -

Request a Quote

BC856AW-QF

Nexperia USA Inc.

TRANS PNP 65V 0.1A SOT323

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 65 V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
• Power - Max: 200 mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

封装: -

Request a Quote

BAT54LS-QYL

Nexperia USA Inc.

DIODE SCHOTTKY 30V 200MA 2DFN

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5 ns
• Current - Reverse Leakage @ Vr: 2 µA @ 25 V
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: DFN1006BD-2
• Operating Temperature - Junction: 150°C

封装: -

PUMD4-QX

Nexperia USA Inc.

PUMD4-Q/SOT363/SC-88

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 1µA
• Frequency - Transition: -
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: 6-TSSOP

封装: -

Request a Quote

BAV70W-QF

Nexperia USA Inc.

DIODE ARRAY GP 100V 175MA SOT323

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io) (per Diode): 175mA
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4 ns
• Current - Reverse Leakage @ Vr: 500 nA @ 80 V
• Operating Temperature - Junction: 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

封装: -

BZX84W-C3V3-QX

Nexperia USA Inc.

BZX84W-C3V3-Q/SOT323/SC-70

• Voltage - Zener (Nom) (Vz): 3.3 V
• Tolerance: ±6.06%
• Power - Max: 275 mW
• Impedance (Max) (Zzt): 95 Ohms
• Current - Reverse Leakage @ Vr: 5 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

封装: -

Request a Quote

BZX384-B4V3-QX

Nexperia USA Inc.

BZX384-B4V3-Q/SOD323/SOD2

• Voltage - Zener (Nom) (Vz): 4.3 V
• Tolerance: ±2%
• Power - Max: 300 mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 3 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

封装: -

Request a Quote

PSMN1R8-80SSFJ

Nexperia USA Inc.

NEXTPOWER 80/100V MOSFETS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 270A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 15319 pF @ 40 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 341W (Ta)
• Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK88 (SOT1235)
• Package / Case: SOT-1235

封装: -

SZMM3Z13VT1GX

Nexperia USA Inc.

SZMM3Z13VT1G/SOD323/SOD2

• Voltage - Zener (Nom) (Vz): 13 V
• Tolerance: ±5%
• Power - Max: 300 mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 10 V
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

封装: -

BAV170-QVL

Nexperia USA Inc.

DIODE ARRAY GP 75V 215MA TO236AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 75 V
• Current - Average Rectified (Io) (per Diode): 215mA
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3 µs
• Current - Reverse Leakage @ Vr: 5 nA @ 75 V
• Operating Temperature - Junction: 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB

封装: -

Request a Quote

BZX384-A30X

Nexperia USA Inc.

BZX384-A30/SOD323/SOD2

• Voltage - Zener (Nom) (Vz): 30 V
• Tolerance: ±1%
• Power - Max: 300 mW
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 50 nA @ 21 V
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

封装: -

Request a Quote

BAS21LLYL

Nexperia USA Inc.

DIODE GP 200V 330MA 2DFN

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 330mA
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 100 nA @ 200 V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 2-XDFN
• Supplier Device Package: DFN1006D-2
• Operating Temperature - Junction: 150°C (Max)

封装: -

BUK9K25-40E-1X

Nexperia USA Inc.

MOSFET 40V 18.2A LFPAK56D

• FET Type: -
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 18.2A (Ta)
• Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V
• Power - Max: 32W (Ta)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-1205, 8-LFPAK56
• Supplier Device Package: LFPAK56D

封装: -

Request a Quote