Panasonic Electronic Components 产品 - 晶体管 - FET，MOSFET - 单

FM6K62010L

Panasonic Electronic Components

MOSFET N-CH 20V 2A SC113DA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
• Vgs(th) (Max) @ Id: 1.3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
• Vgs (Max): ±10V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 105 mOhm @ 1A, 4V
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: WSMini6-F1-B
• Package / Case: 6-SMD, Flat Leads

封装: 6-SMD, Flat Leads

MTM131270BBF

Panasonic Electronic Components

MOSFET P-CH 20V 2A SOT23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8 V, 4V
• Vgs(th) (Max) @ Id: 1.1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 130 mOhm @ 1A, 4V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Mini3-G3-B
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

MTM861270LBF

Panasonic Electronic Components

MOSFET P-CH 20V 2A WSSMINI6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
• Vgs(th) (Max) @ Id: 1.1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 540mW (Ta)
• Rds On (Max) @ Id, Vgs: 120 mOhm @ 1A, 4V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: WSSMini6-F1
• Package / Case: 6-SMD, Flat Leads

封装: 6-SMD, Flat Leads

FK3906010L

Panasonic Electronic Components

MOSFET N-CH 60V 100MA SSMINI3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
• Vgs(th) (Max) @ Id: 1.5V @ 1µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 125mW (Ta)
• Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SSMini3-F3-B
• Package / Case: SC-89, SOT-490

封装: SC-89, SOT-490

FJ3303010L

Panasonic Electronic Components

MOSFET P-CH 30V 100MA SSSMINI3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
• Vgs(th) (Max) @ Id: 1.5V @ 1µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 100mW (Ta)
• Rds On (Max) @ Id, Vgs: 7 Ohm @ 10mA, 4V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SSSMini3-F2-B
• Package / Case: SOT-723

封装: SOT-723

2SK3046

Panasonic Electronic Components

MOSFET N-CH 500V 7A TO-220D

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 20V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 40W (Tc)
• Rds On (Max) @ Id, Vgs: 1 Ohm @ 4A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220D-A1
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

2SK3043

Panasonic Electronic Components

MOSFET N-CH 450V 5A TO-220D

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 450V
• Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 35W (Tc)
• Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 3A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220D-A1
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

2SK3048

Panasonic Electronic Components

MOSFET N-CH 600V 3A TO-220D

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 35W (Tc)
• Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220D-A1
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

MTM232270LBF

Panasonic Electronic Components

MOSFET N CH 20V 2A SMINI3-G1-B

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
• Vgs(th) (Max) @ Id: 1.3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 110 mOhm @ 1A, 4V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SMini3-G1-B
• Package / Case: SC-70, SOT-323

封装: SC-70, SOT-323

MTM761230LBF

Panasonic Electronic Components

MOSFET P-CH 20V 3A WSMINI6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
• Vgs(th) (Max) @ Id: 1.3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 55 mOhm @ 1A, 4V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: WSMini6-F1-B
• Package / Case: 6-SMD, Flat Leads

封装: 6-SMD, Flat Leads

2SK3064G0L

Panasonic Electronic Components

MOSFET N-CH 30V .1A S-MINI-3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2V @ 1µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150mW (Ta)
• Rds On (Max) @ Id, Vgs: 50 Ohm @ 10mA, 5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SMini3-F2
• Package / Case: SC-85

封装: SC-85

2SK3892

Panasonic Electronic Components

MOSFET N-CH 200V 22A TO-220D

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 3177pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 40W (Tc)
• Rds On (Max) @ Id, Vgs: 62 mOhm @ 11A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220D-A1
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

MTM982400BBF

Panasonic Electronic Components

MOSFET N-CH 40V 7A SO8-F1

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SO8-F1-B
• Package / Case: 8-SMD, Flat Lead

封装: 8-SMD, Flat Lead

2SK326800L

Panasonic Electronic Components

MOSFET N-CH 100V 15A UG-2

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta), 20W (Tc)
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 12A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: U-DL
• Package / Case: U-G2

封装: U-G2

MTM981400BBF

Panasonic Electronic Components

MOSFET P-CH 40V 7A S08

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SO8-F1-B
• Package / Case: 8-SMD, Flat Lead

封装: 8-SMD, Flat Lead

2SK3045

Panasonic Electronic Components

MOSFET N-CH 500V 2.5A TO-220D

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 20V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 30W (Tc)
• Rds On (Max) @ Id, Vgs: 4 Ohm @ 1.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220D-A1
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

SK8603140L

Panasonic Electronic Components

MOSFET N-CH 30V 25A 8HSO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 103A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 5.85mA
• Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
• Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 23A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-HSO
• Package / Case: 8-PowerSMD, Flat Leads

封装: 8-PowerSMD, Flat Leads

2SK302500L

Panasonic Electronic Components

MOSFET N-CH 60V 30A UG-2

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta), 25W (Tc)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 15A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: U-DL
• Package / Case: U-G2

封装: U-G2

MTMF82310BBF

Panasonic Electronic Components

MOSFET N-CH 30V 18A S08

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SO8-F1-B
• Package / Case: 8-SMD, Flat Lead

封装: 8-SMD, Flat Lead

SK8603150L

Panasonic Electronic Components

MOSFET N-CH 30V 26A 8HSO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 89A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 4.38mA
• Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 5180pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.9W (Ta), 34W (Tc)
• Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 20A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-HSO
• Package / Case: 8-PowerSMD, Flat Leads

封装: 8-PowerSMD, Flat Leads

FK8V03040L

Panasonic Electronic Components

MOSFET N CH 33V 10A WMINI8-F1

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 33V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1.12mA
• Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: WMini8-F1
• Package / Case: 8-SMD, Flat Lead

封装: 8-SMD, Flat Lead

SK8403160L

Panasonic Electronic Components

MOSFET N-CH 30V 18A 8HSSO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 3.35mA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 3920pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 28W (Tc)
• Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 14.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-HSSO
• Package / Case: 8-SMD, Flat Lead

封装: 8-SMD, Flat Lead

FJ3P02100L

Panasonic Electronic Components

MOSFET P CH 20V 4.4A PMCP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
• Vgs(th) (Max) @ Id: 1.05V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 3.7A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 3-PMCP
• Package / Case: 3-SMD, Non-Standard

封装: 3-SMD, Non-Standard

SK8603170L

Panasonic Electronic Components

MOSFET N-CH 30V 20A 8HSO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 59A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 2.56mA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.8W (Ta), 24W (Tc)
• Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 14A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-HSO
• Package / Case: 8-PowerSMD, Flat Leads

封装: 8-PowerSMD, Flat Leads

SK8403170L

Panasonic Electronic Components

MOSFET N-CH 30V 16A 8HSSO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 59A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 2.56mA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 24.6W (Tc)
• Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 12A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-HSSO
• Package / Case: 8-SMD, Flat Lead

封装: 8-SMD, Flat Lead

FK8V03050L

Panasonic Electronic Components

MOSFET N CH 33V 8A WMINI8-F1

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 33V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 730µA
• Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 15 mOhm @ 4A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: WMini8-F1
• Package / Case: 8-SMD, Flat Lead

封装: 8-SMD, Flat Lead

SK8603180L

Panasonic Electronic Components

MOSFET N-CH 30V 15A 8HSO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 39A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1.45mA
• Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.4W (Ta), 19W (Tc)
• Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 10A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-HSO
• Package / Case: 8-PowerSMD, Flat Leads

封装: 8-PowerSMD, Flat Leads

2SK303100L

Panasonic Electronic Components

MOSFET N-CH 100V 15A UG-1

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta), 20W (Tc)
• Rds On (Max) @ Id, Vgs: 135 mOhm @ 8A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: U-G1
• Package / Case: U-G1

封装: U-G1