页 13 - Renesas Electronics America 产品 - 晶体管 - FET，MOSFET - 单

零件编号	制造商	描述	封装	库存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
N0300N-T1B-AT	Renesas Electronics America	MOSFET N-CH 30V 4.5A SC96 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V (Typ) Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SC-96-3, Thin Mini Mold Package / Case: SC-96	封装: SC-96	库存608,844	MOSFET (Metal Oxide)	30V	4.5A (Ta)	4.5V, 10V	-	7.4nC @ 10V (Typ)	350pF @ 10V	±20V	-	1.25W (Ta)	50 mOhm @ 2A, 10V	150°C	Surface Mount	SC-96-3, Thin Mini Mold	SC-96
RJK0629DPE-00#J3	Renesas Electronics America	MOSFET N-CH 60V 85A LDPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 85A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 43A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-LDPAK Package / Case: SC-83	封装: SC-83	库存4,208	MOSFET (Metal Oxide)	60V	85A (Ta)	4.5V, 10V	-	85nC @ 10V	4100pF @ 10V	±20V	-	100W (Tc)	4.5 mOhm @ 43A, 10V	150°C (TJ)	Surface Mount	4-LDPAK	SC-83
HAT2192WP-EL-E	Renesas Electronics America	MOSFET N-CH 250V 10A WPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WPAK Package / Case: 8-PowerWDFN	封装: 8-PowerWDFN	库存2,608	MOSFET (Metal Oxide)	250V	10A (Ta)	10V	-	15nC @ 10V	710pF @ 25V	±30V	-	25W (Tc)	230 mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	8-WPAK	8-PowerWDFN
RQK0607AQDQS#H1	Renesas Electronics America	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UPAK Package / Case: TO-243AA	封装: TO-243AA	库存7,568	MOSFET (Metal Oxide)	60V	2.4A (Ta)	2.5V, 4.5V	-	2nC @ 4.5V	170pF @ 10V	±12V	-	1.5W (Ta)	270 mOhm @ 1.2A, 4.5V	150°C (TJ)	Surface Mount	UPAK	TO-243AA
RJK6024DPH-E0#T2	Renesas Electronics America	MOSFET N-CH 600V 0.4A LDPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存3,456	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-