Taiwan Semiconductor Corporation 产品

BZD27C30PHR3G

Taiwan Semiconductor Corporation

DIODE, ZENER, 30V, 1000MW, %, AE

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±6.66%
• Power - Max: 1W
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 22V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

封装: DO-219AB

1SMB5927HR5G

Taiwan Semiconductor Corporation

DIODE, ZENER, 12V, 3000MW, 5%, A

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 6.5 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 9.1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

封装: DO-214AA, SMB

2M82Z R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 82V, 2000MW, %, DO

• Voltage - Zener (Nom) (Vz): 82V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 62.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

封装: DO-204AC, DO-15, Axial

BZD27C82P M2G

Taiwan Semiconductor Corporation

DIODE, ZENER, 82V, 1000MW, %, SU

• Voltage - Zener (Nom) (Vz): 82V
• Tolerance: ±6.09%
• Power - Max: 1W
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 62V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

封装: DO-219AB

1N4745AHR1G

Taiwan Semiconductor Corporation

DIODE, ZENER, 16V, 1000MW, 5%, A

• Voltage - Zener (Nom) (Vz): 16V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 23 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 12.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

1N4762A R1G

Taiwan Semiconductor Corporation

DIODE, ZENER, 82V, 1000MW, 5%, D

• Voltage - Zener (Nom) (Vz): 82V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 62.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

1SMA5933HM2G

Taiwan Semiconductor Corporation

DIODE, ZENER, 22V, 1500MW, 5%, A

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 17.5 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 16.7V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

封装: DO-214AC, SMA

BZT52C3V3-G RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 3.3V, 350MW, 5%, S

• Voltage - Zener (Nom) (Vz): 3.3V
• Tolerance: ±5%
• Power - Max: 350mW
• Impedance (Max) (Zzt): 95 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

封装: SOD-123

MMSZ5250B RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 20V, 500MW, 5%, SO

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 25 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 15V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

封装: SOD-123F

MTZJ36SD R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 34.89V, 500MW, %,

• Voltage - Zener (Nom) (Vz): 34.89V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 75 Ohms
• Current - Reverse Leakage @ Vr: 200nA @ 27V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Supplier Device Package: DO-34

封装: DO-204AG, DO-34, Axial

BZX79C2V4 A0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 2.4V, 500MW, 5%, D

• Voltage - Zener (Nom) (Vz): 2.4V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 100µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

封装: DO-204AH, DO-35, Axial

TS35P06GHC2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 35A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800V
• Current - Average Rectified (Io): 35A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
• Current - Reverse Leakage @ Vr: 10µA @ 800V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

封装: 4-SIP, TS-6P

1N4741G

Taiwan Semiconductor Corporation

DO-204AL (DO-41), 1000MW, 5%, SM

• Voltage - Zener (Nom) (Vz): 11 V
• Tolerance: ±5%
• Power - Max: 1 W
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
• Operating Temperature: -65°C ~ 200°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: -

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SS315-V7G

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 150V 3A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 150 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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BAS316WS

Taiwan Semiconductor Corporation

SOD-323F, 100V, 0.25A, SWITCHING

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): 250mA
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 75 V
• Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F
• Operating Temperature - Junction: -65°C ~ 150°C

封装: -

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SRS10150

Taiwan Semiconductor Corporation

DIODE ARR SCHOT 150V 10A TO263AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 150 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)

封装: -

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SS24MH

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 2A MICRO SMA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150 µA @ 40 V
• Capacitance @ Vr, F: 35pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: Micro SMA
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

GPA807

Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 8A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

SF1008GH

Taiwan Semiconductor Corporation

DIODE ARRAY GP 600V 10A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封装: -

1SMA5944

Taiwan Semiconductor Corporation

DIODE ZENER 62V 1.5W DO214AC

• Voltage - Zener (Nom) (Vz): 62 V
• Tolerance: ±5%
• Power - Max: 1.5 W
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 47.1 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

封装: -

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TS5205CX5

Taiwan Semiconductor Corporation

150MA ADJUSTABLE ULTRA LOW DROPO

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 16V
• Voltage - Output (Min/Fixed): 1.24V
• Voltage - Output (Max): 8V
• Voltage Dropout (Max): 0.275V @ 150mA
• Current - Output: 150mA
• Current - Quiescent (Iq): 125 µA
• Current - Supply (Max): 1.9 mA
• PSRR: 75dB (100Hz)
• Control Features: Current Limit, Enable
• Protection Features: Over Current, Over Temperature, Reverse Polarity
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-25

封装: -

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MUR305S-V7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 3A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 50 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 175°C

封装: -

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SS16ALH

Taiwan Semiconductor Corporation

1A, 60V, SCHOTTKY RECTIFIER

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 710 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 60 V
• Capacitance @ Vr, F: 55pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: Thin SMA
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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MBRS20H200CT

Taiwan Semiconductor Corporation

DIODE ARR SCHOT 200V 20A TO263AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io) (per Diode): 20A
• Voltage - Forward (Vf) (Max) @ If: 970 mV @ 20 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)

封装: -

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SK35B

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 50V 3A DO214AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 50 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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TS15P05G-K-C2G

Taiwan Semiconductor Corporation

BRIDGE RECT 1P 600V 15A TS-6P

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600 V
• Current - Average Rectified (Io): 15 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

封装: -

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SR809

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 90V 8A DO201AD

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 90 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 90 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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UGF1004GA

Taiwan Semiconductor Corporation

DIODE ARRAY GP 200V 10A ITO220AB

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 20 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

封装: -