Taiwan Semiconductor Corporation 产品

BZD27C82PHRVG

Taiwan Semiconductor Corporation

DIODE, ZENER, 82V, 1000MW, %, AE

• Voltage - Zener (Nom) (Vz): 82V
• Tolerance: ±6.09%
• Power - Max: 1W
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 62V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

封装: DO-219AB

BZD27C12PW RVG

Taiwan Semiconductor Corporation

DIODE, ZENER, 12V, 1000MW, %, SO

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 9.1V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD123W

封装: SOD-123W

BZD27C10PHRQG

Taiwan Semiconductor Corporation

DIODE, ZENER, 10V, 1000MW, %, AE

• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: ±6%
• Power - Max: 1W
• Impedance (Max) (Zzt): 4 Ohms
• Current - Reverse Leakage @ Vr: 7µA @ 7.5V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

封装: DO-219AB

1M180Z A0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 180V, 1000MW, 5%,

• Voltage - Zener (Nom) (Vz): 180V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 1200 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 136.8V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

UDZS30B RRG

Taiwan Semiconductor Corporation

DIODE, ZENER, 30V, 200MW, 2%, SO

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±2%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 45nA @ 23V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

封装: SC-90, SOD-323F

UDZS22B RRG

Taiwan Semiconductor Corporation

DIODE, ZENER, 22V, 200MW, 2%, SO

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±2%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 45nA @ 17V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

封装: SC-90, SOD-323F

MTZJ8V2SB R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 7.99V, 500MW, %, D

• Voltage - Zener (Nom) (Vz): 7.99V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 5V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Supplier Device Package: DO-34

封装: DO-204AG, DO-34, Axial

1N5238B A0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 8.7V, 500MW, 5%, D

• Voltage - Zener (Nom) (Vz): 8.7V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 6.5V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: 100°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

封装: DO-204AH, DO-35, Axial

DBLS106GHC1G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Current - Reverse Leakage @ Vr: 2µA @ 800V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: DBLS

封装: 4-SMD, Gull Wing

SS310-V7G

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 3A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

SS515FSH

Taiwan Semiconductor Corporation

5A, 150V, SCHOTTKY RECTIFIER

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 150 V
• Capacitance @ Vr, F: 126pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: SOD-128
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

DBL106GH

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 800V 1A DBL

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800 V
• Current - Average Rectified (Io): 1 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Current - Reverse Leakage @ Vr: 2 µA @ 800 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Supplier Device Package: DBL

封装: -

SFF10L06GAH

Taiwan Semiconductor Corporation

DIODE ARRAY GP 400V 10A ITO220AB

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

封装: -

HS1JLH

Taiwan Semiconductor Corporation

75NS, 1A, 600V, HIGH EFFICIENT R

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: Sub SMA
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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BZD27C150PH

Taiwan Semiconductor Corporation

SUB SMA, 1000MW, 6%, ZENER DIODE

• Voltage - Zener (Nom) (Vz): 147 V
• Tolerance: ±6.12%
• Power - Max: 1 W
• Impedance (Max) (Zzt): 300 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 110 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: Sub SMA

封装: -

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TS25P07G-K-C2G

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 25A TS-6P

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1 kV
• Current - Average Rectified (Io): 25 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
• Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

封装: -

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S5JBH

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 5A DO214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: 40pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

MMBT3906L

Taiwan Semiconductor Corporation

SOT-23, -40V, -0.2A, PNP BIPOLAR

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 200 mA
• Voltage - Collector Emitter Breakdown (Max): 40 V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 350 mW
• Frequency - Transition: 250MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

封装: -

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BZT55C2V7

Taiwan Semiconductor Corporation

QMMELF, 500MW, 5%, SMALL SIGNAL

• Voltage - Zener (Nom) (Vz): 2.7 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 85 Ohms
• Current - Reverse Leakage @ Vr: 10 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: QMMELF

封装: -

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SFAF2008GH

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 20A ITO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: 150pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

RDBLS207GH

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 2A DBLS

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1 kV
• Current - Average Rectified (Io): 2 A
• Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
• Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: DBLS

封装: -

1PGSMB5931-R5G

Taiwan Semiconductor Corporation

DIODE ZENER 18V 3W DO214AA

• Voltage - Zener (Nom) (Vz): 18 V
• Tolerance: ±5%
• Power - Max: 3 W
• Impedance (Max) (Zzt): 12 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 13.7 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

封装: -

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MTZJ2V2SB

Taiwan Semiconductor Corporation

DO-34, 500MW, 2%, SMALL SIGNAL Z

• Voltage - Zener (Nom) (Vz): 2.2 V
• Tolerance: ±2%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 120 µA @ 700 mV
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Supplier Device Package: DO-34

封装: -

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BZT52C68

Taiwan Semiconductor Corporation

SOD-123F, 500MW, 5%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 68 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 240 Ohms
• Current - Reverse Leakage @ Vr: 45 nA @ 47.6 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

封装: -

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TSM5055DCR

Taiwan Semiconductor Corporation

MOSFET 2N-CH 30V 107A 8DFN

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 38A (Tc), 20A (Ta), 107A (Tc)
• Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V, 3.6mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V, 49nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 15V, 2550pF @ 15V
• Power - Max: 2.2W (Ta), 30W (Tc), 2.4W (Ta), 69W (Tc)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-PDFN (5x6)

封装: -

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BAV21W-G

Taiwan Semiconductor Corporation

SOD-123, 250V, 0.2A, SWITCHING D

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 100 nA @ 200 V
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: -65°C ~ 150°C

封装: -

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1N4747AH

Taiwan Semiconductor Corporation

DIODE ZENER 20V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 20 V
• Tolerance: ±5%
• Power - Max: 1 W
• Impedance (Max) (Zzt): 95 Ohms
• Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: -

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SRF1040H

Taiwan Semiconductor Corporation

DIODE ARR SCHOT 40V 10A ITO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 40 V
• Operating Temperature - Junction: -55°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

封装: -

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