图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage |
MOSFET N-CH
|
封装: TO-226-3, TO-92-3 Long Body |
库存5,200 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH
|
封装: TO-226-3, TO-92-3 Long Body |
库存7,456 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH
|
封装: TO-226-3, TO-92-3 Long Body |
库存4,416 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH
|
封装: TO-226-3, TO-92-3 Long Body |
库存4,368 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH
|
封装: TO-226-3, TO-92-3 Long Body |
库存3,024 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH
|
封装: TO-226-3, TO-92-3 Long Body |
库存6,048 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH
|
封装: TO-226-3, TO-92-3 Long Body |
库存6,752 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH
|
封装: TO-226-3, TO-92-3 Long Body |
库存6,832 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH
|
封装: TO-220-3 Full Pack |
库存5,744 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH
|
封装: TO-220-3 Full Pack |
库存2,496 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH
|
封装: TO-220-3 Full Pack |
库存6,752 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH
|
封装: TO-220-3 Full Pack |
库存2,048 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH
|
封装: TO-220-3 Full Pack |
库存3,680 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH
|
封装: TO-220-3 Full Pack |
库存5,488 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH
|
封装: TO-220-3 Full Pack |
库存3,488 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH
|
封装: TO-220-3 Full Pack |
库存3,792 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 50V 100MA USM
|
封装: - |
库存7,488 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A 5DFN
|
封装: 4-VSFN Exposed Pad |
库存2,512 |
|
MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | ±30V | Super Junction | 139W (Tc) | 190 mOhm @ 7.9A, 10V | 150°C (TJ) | Surface Mount | 5-DFN (8x8) | 4-VSFN Exposed Pad |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 11.5A 5DFN
|
封装: 4-VSFN Exposed Pad |
库存6,048 |
|
MOSFET (Metal Oxide) | 600V | 11.5A (Ta) | 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | ±30V | Super Junction | 104W (Tc) | 300 mOhm @ 5.8A, 10V | 150°C (TJ) | Surface Mount | 5-DFN (8x8) | 4-VSFN Exposed Pad |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 4.7A TSM
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存6,336 |
|
MOSFET (Metal Oxide) | 20V | 4.7A (Ta) | 1.8V, 4V | - | - | 1020pF @ 10V | ±12V | - | 700mW (Ta) | 31 mOhm @ 4A, 4V | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 3A TSM
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存2,048 |
|
MOSFET (Metal Oxide) | 30V | 3A (Ta) | 1.8V, 4V | - | 4.3nC @ 4V | 270pF @ 10V | ±12V | - | 700mW (Ta) | 71 mOhm @ 2A, 4V | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 3.2A TSM
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存29,748 |
|
MOSFET (Metal Oxide) | 30V | 3.2A (Ta) | 2.5V, 4V | - | - | 152pF @ 10V | ±10V | - | 1.25W (Ta) | 120 mOhm @ 1.6A, 4V | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.1A SSM
|
封装: SC-75, SOT-416 |
库存396,000 |
|
MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 2.5V | - | - | 8.5pF @ 3V | 10V | - | 100mW (Ta) | 12 Ohm @ 10mA, 2.5V | 150°C (TJ) | Surface Mount | SSM | SC-75, SOT-416 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 2.7A TSM
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存35,436 |
|
MOSFET (Metal Oxide) | 30V | 2.7A (Ta) | 4V, 10V | - | - | 413pF @ 15V | ±20V | - | 700mW (Ta) | 85 mOhm @ 1.35A, 10V | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.1A USV
|
封装: 5-TSSOP, SC-70-5, SOT-353 |
库存3,632 |
|
MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 2.5V | - | - | 8.5pF @ 3V | 10V | - | 200mW (Ta) | 12 Ohm @ 10mA, 2.5V | 150°C (TJ) | Surface Mount | USV | 5-TSSOP, SC-70-5, SOT-353 |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 11.5A IPAK
|
封装: TO-251-3 Stub Leads, IPak |
库存3,136 |
|
MOSFET (Metal Oxide) | 600V | 11.5A (Ta) | 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | ±30V | Super Junction | 100W (Tc) | 340 mOhm @ 5.8A, 10V | 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 11.5A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存240,000 |
|
MOSFET (Metal Oxide) | 600V | 11.5A (Ta) | 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | ±30V | Super Junction | 100W (Tc) | 340 mOhm @ 5.8A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A TO-220SIS
|
封装: TO-220-3 Full Pack, Isolated Tab |
库存5,216 |
|
MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 3.7V @ 1.5mA | 43nC @ 10V | 1350pF @ 300V | ±30V | Super Junction | 40W (Tc) | 190 mOhm @ 7.9A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |