页 6 - Vishay Siliconix 产品 - 晶体管 - FET,MOSFET - 阵列 | 黑森尔电子
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Vishay Siliconix 产品 - 晶体管 - FET,MOSFET - 阵列

记录 749
页  6/27
图片
零件编号
制造商
描述
封装
库存
数量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SQJ504EP-T1_BE3
Vishay Siliconix

MOSFET N/P-CH 40V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 85nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V, 4600pF @ 25V
  • Power - Max: 34W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
封装: -
库存26,688
-
40V
30A (Tc)
7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V
2.5V @ 250µA
30nC @ 10V, 85nC @ 10V
1900pF @ 25V, 4600pF @ 25V
34W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SQJB00EP-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 60V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
  • Power - Max: 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8
  • Supplier Device Package: PowerPAK® SO-8
封装: -
库存6,708
-
60V
30A (Tc)
13mOhm @ 10A, 10V
3.5V @ 250µA
35nC @ 10V
1700pF @ 25V
48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SQJ980AEP-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 75V 17A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 35V
  • Power - Max: 34W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
封装: -
库存17,934
-
75V
17A (Tc)
50mOhm @ 3.8A, 10V
2.5V @ 250µA
21nC @ 10V
790pF @ 35V
34W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SQJQ936E-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 100A PPAK8X8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
  • Power - Max: 75W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 8 x 8 Dual
  • Supplier Device Package: PowerPAK® 8 x 8 Dual
封装: -
Request a Quote
-
40V
100A (Tc)
2.3mOhm @ 5A, 10V
3.5V @ 250µA
113nC @ 10V
6600pF @ 25V
75W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® 8 x 8 Dual
PowerPAK® 8 x 8 Dual
SISF20DN-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 60V 14A/52A PPAK 12

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V
  • Power - Max: 5.2W (Ta), 69.4W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 1212-8SCD Dual
  • Supplier Device Package: PowerPAK® 1212-8SCD Dual
封装: -
Request a Quote
-
60V
14A (Ta), 52A (Tc)
13mOhm @ 7A, 10V
3V @ 250µA
33nC @ 10V
1290pF @ 30V
5.2W (Ta), 69.4W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8SCD Dual
PowerPAK® 1212-8SCD Dual
SIZ348DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 18A/30A 8PWR33

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
  • Power - Max: 3.7W (Ta), 16.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-Power33 (3x3)
封装: -
库存17,520
-
30V
18A (Ta), 30A (Tc)
7.12mOhm @ 15A, 10V
2.4V @ 250µA
18.2nC @ 10V
820pF @ 15V
3.7W (Ta), 16.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-Power33 (3x3)
SQ4532AEY-T1_BE3
Vishay Siliconix

MOSFET N/P-CH 30V 7.3A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V
  • Power - Max: 3.3W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: -
库存1,365
-
30V
7.3A (Tc), 5.3A (Tc)
31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
2.5V @ 250µA
7.8nC @ 10V, 10.2nC @ 10V
535pF @ 15V, 528pF @ 15V
3.3W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SQ4532AEY-T1_GE3
Vishay Siliconix

MOSFET N/P-CH 30V 7.3A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V
  • Power - Max: 3.3W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: -
库存9,534
-
30V
7.3A (Tc), 5.3A (Tc)
31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
2.5V @ 250µA
7.8nC @ 10V, 10.2nC @ 10V
535pF @ 15V, 528pF @ 15V
3.3W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SI1967DH-T1-BE3
Vishay Siliconix

MOSFET 2P-CH 20V 1A/1.3A SC70-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 1.3A (Tc)
  • Rds On (Max) @ Id, Vgs: 490mOhm @ 910mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
  • Power - Max: 740mW (Ta), 1.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
封装: -
库存3,129
-
20V
1A (Ta), 1.3A (Tc)
490mOhm @ 910mA, 4.5V
1V @ 250µA
4nC @ 10V
110pF @ 10V
740mW (Ta), 1.25W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
SQJB70EP-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 100V 11.3A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
  • Power - Max: 27W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
封装: -
库存7,674
-
100V
11.3A (Tc)
95mOhm @ 4A, 10V
3.5V @ 250µA
7nC @ 10V
220pF @ 25V
27W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SI7530DP-T1-E3
Vishay Siliconix

MOSFET N/P-CH 60V 3A PPAK SO-8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A, 3.2A
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 4.6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W, 1.5W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
封装: -
Request a Quote
Logic Level Gate
60V
3A, 3.2A
75mOhm @ 4.6A, 10V
3V @ 250µA
20nC @ 10V
-
1.4W, 1.5W
-
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SIZF916DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 23A 8PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc)
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 95nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V, 4320pF @ 15V
  • Power - Max: 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (6x5)
封装: -
库存2,733
-
30V
23A (Ta), 40A (Tc)
4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V
2.4V @ 250µA, 2.2V @ 250µA
22nC @ 10V, 95nC @ 10V
1060pF @ 15V, 4320pF @ 15V
3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (6x5)
SQJ504EP-T1_GE3
Vishay Siliconix

MOSFET N/P-CH 40V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 85nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V, 4600pF @ 25V
  • Power - Max: 34W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
封装: -
库存8,388
-
40V
30A (Tc)
7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V
2.5V @ 250µA
30nC @ 10V, 85nC @ 10V
1900pF @ 25V, 4600pF @ 25V
34W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SQJ260EP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 60V 20A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 6A, 10V, 8.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V, 2500pF @ 25V
  • Power - Max: 27W (Tc), 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
封装: -
库存8,994
-
60V
20A (Tc), 54A (Tc)
19mOhm @ 6A, 10V, 8.5mOhm @ 10A, 10V
2.5V @ 250µA
20nC @ 10V, 40nC @ 10V
1100pF @ 25V, 2500pF @ 25V
27W (Tc), 48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual Asymmetric
SI4953ADY-T1-E3
Vishay Siliconix

MOSFET 2P-CH 30V 3.7A 8-SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A
  • Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: -
Request a Quote
Logic Level Gate
30V
3.7A
53mOhm @ 4.9A, 10V
1V @ 250µA (Min)
25nC @ 10V
-
1.1W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SIZF640DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 40V 41A PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 159A (Tc)
  • Rds On (Max) @ Id, Vgs: 1.37mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5750pF @ 20V
  • Power - Max: 4.2W (Ta), 62.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerDFN
  • Supplier Device Package: PowerPAIR® 6x5FS
封装: -
Request a Quote
-
40V
41A (Ta), 159A (Tc)
1.37mOhm @ 15A, 10V
2.4V @ 250µA
106nC @ 10V
5750pF @ 20V
4.2W (Ta), 62.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerDFN
PowerPAIR® 6x5FS
SQJ951EP-T1_BE3
Vishay Siliconix

MOSFET 2P-CH 30V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V
  • Power - Max: 56W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
封装: -
库存17,205
-
30V
30A (Tc)
17mOhm @ 7.5A, 10V
2.5V @ 250µA
50nC @ 10V
1680pF @ 10V
56W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SIZ256DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 70V 11.5A 8PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 70V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 31.8A (Tc)
  • Rds On (Max) @ Id, Vgs: 17.6mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 35V
  • Power - Max: 4.3W (Ta), 33W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (3.3x3.3)
封装: -
库存9,000
-
70V
11.5A (Ta), 31.8A (Tc)
17.6mOhm @ 7A, 4.5V
1.5V @ 250µA
27nC @ 10V
1060pF @ 35V
4.3W (Ta), 33W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (3.3x3.3)
SIZF906BDT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 36A 8PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 165nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 15V, 5550pF @ 15V
  • Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (6x5)
封装: -
库存85,068
-
30V
36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V
2.2V @ 250µA
49nC @ 10V, 165nC @ 10V
1630pF @ 15V, 5550pF @ 15V
4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (6x5)
SIZ998DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 20A 8PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 19.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 2620pF @ 15V
  • Power - Max: 20.2W, 32.9W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (6x5)
封装: -
库存11,700
-
30V
20A (Tc), 60A (Tc)
6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V
2.2V @ 250µA
8.1nC @ 4.5V, 19.8nC @ 4.5V
930pF @ 15V, 2620pF @ 15V
20.2W, 32.9W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (6x5)
SQJQ906E-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 95A PPAK8X8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V
  • Power - Max: 50W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 8 x 8 Dual
  • Supplier Device Package: PowerPAK® 8 x 8 Dual
封装: -
库存5,166
-
40V
95A (Tc)
3.3mOhm @ 5A, 10V
3.5V @ 250µA
42nC @ 10V
3600pF @ 20V
50W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® 8 x 8 Dual
PowerPAK® 8 x 8 Dual
SI6562CDQ-T1-BE3
Vishay Siliconix

MOSFET N/P-CH 20V 5.7A 8TSSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 51nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, 1200pF @ 10V
  • Power - Max: 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: -
库存9,714
-
20V
5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)
22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V
1.5V @ 250µA
23nC @ 10V, 51nC @ 10V
850pF @ 10V, 1200pF @ 10V
1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
SQJ958EP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 60V 20A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 34.9mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 30V
  • Power - Max: 35W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
封装: -
库存8,913
-
60V
20A (Tc)
34.9mOhm @ 4.5A, 10V
2.5V @ 250µA
23nC @ 10V
1075pF @ 30V
35W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SIZ240DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 40V 17.2A 8PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 48A (Tc), 16.9A (Ta), 47A (Tc)
  • Rds On (Max) @ Id, Vgs: 8.05mOhm @ 10A, 10V, 8.41mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 20V, 1070pF @ 20V
  • Power - Max: 4.3W (Ta), 33W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (3.3x3.3)
封装: -
Request a Quote
-
40V
17.2A (Ta), 48A (Tc), 16.9A (Ta), 47A (Tc)
8.05mOhm @ 10A, 10V, 8.41mOhm @ 10A, 10V
2.4V @ 250µA
23nC @ 10V, 22nC @ 10V
1180pF @ 20V, 1070pF @ 20V
4.3W (Ta), 33W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (3.3x3.3)
SI5980DU-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 100V 2.5A CHIPFET

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 567mOhm @ 400mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 50V
  • Power - Max: 7.8W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® ChipFET™ Dual
  • Supplier Device Package: PowerPAK® ChipFet Dual
封装: -
Request a Quote
-
100V
2.5A
567mOhm @ 400mA, 10V
4V @ 250µA
3.3nC @ 10V
78pF @ 50V
7.8W
-
Surface Mount
PowerPAK® ChipFET™ Dual
PowerPAK® ChipFet Dual
SQ4946CEY-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 60V 7A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 25V
  • Power - Max: 4W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: -
库存32,814
-
60V
7A (Tc)
40mOhm @ 4.5A, 10V
2.5V @ 250µA
22nC @ 10V
865pF @ 25V
4W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SI3911DV-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 1.8A 6TSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A
  • Rds On (Max) @ Id, Vgs: 145mOhm @ 2.2A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
封装: -
Request a Quote
Logic Level Gate
20V
1.8A
145mOhm @ 2.2A, 4.5V
450mV @ 250µA (Min)
7.5nC @ 4.5V
-
830mW
-
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
SI6562DQ-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 20V 8-TSSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: -
Request a Quote
Logic Level Gate
20V
-
30mOhm @ 4.5A, 4.5V
600mV @ 250µA (Min)
25nC @ 4.5V
-
1W
-
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP