Alliance - New high-speed CMOS DDR2 synchronous DRAMs offer 2Gb density (AS4C128M16D2) | 黑森尔电子
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Alliance - New high-speed CMOS DDR2 synchronous DRAMs offer 2Gb density (AS4C128M16D2)

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发布日期: 2015-09-23
With the introduction of new high-density 2Gb devices in 84ball 8mm x 12.5mm x 1.2mm FBGA packages, Alliance Memory has expanded its lineup of high-speed CMOS dual data rate 2 synchronous DRAM (DDR2 SDRAM). AS4C128M16D2 has a limited number of suppliers and is suitable for commercial temperature range (0C to + 85C) and industrial temperature range (-40C to + 95C). The company says it has been difficult to find AS4C128M16D2 to date, which offers a reliable, pin-to-pin compatible alternative to many similar solutions in automotive, industrial, consumer, networking and medical products that require high memory bandwidth . The device is internally configured as eight 16M x 16-bit memory banks. DDR2 SDRAM provides a synchronous interface, uses a single + 1.8V (± 0.1V) power supply, and is RoHS compliant. AS4C128M16D2 has a fast clock rate of 400MHz and a data rate of 800Mbps / pin. DDR2 SDRAM provides 4 or 8 programmable read or write burst lengths. The automatic precharge function provides a self-timed line precharge that starts at the end of the burst sequence. The company said that easy-to-use refresh functions include auto-refresh or self-refresh, and the programmable mode register allows the system to select the most appropriate mode to maximize performance.