Diodes Incorporated's new DMN2014LHAB and DMN2011UFX dual N-channel enhancement-mode MOSFETs provide compact bidirectional low-loss switching for battery charging circuits. The end market includes chargers for portable devices such as smartphones, tablets, cameras and media players. These chargers use 1- and 2-cell lithium batteries.
DMN2014LHAB and DMN2011UFX are configured as dual common-drain MOSFETs, and when turned on, the device allows bidirectional current flow for charging or operating use. They protect the battery by preventing overcharging or excessive current consumption when the power is turned off. DMN2014LHAB and DMN2011UFX have a breakdown voltage rating of 20V. They also have low on-resistance and RDS (on) less than 3V. 13mΩ and below are reduced by 9.5mΩ to reduce battery power consumption during normal operation. A maximum peak current of 80A allows the switch to handle short-circuit conditions briefly before the protection circuit is activated, while the low threshold threshold voltage VGS (th) is less than 1V, which ensures 1.8V correct operation even when the drive voltage is as low as 100V.
DMN2014LHAB uses a 2mm x 3mm DFN2030 small package, while DMN2011UFX uses a 2mm x 5mm DFN2050 package, providing a small solution that allows designers to take advantage of the space savings to accommodate more batteries and increase the battery's mAh capacity. the company.
