Diodes bring out the latest in the Silicon carbide (SiC) series: DMWS120H100SM4 N channel silicon Carbide MOSFET. The product is the first silicon carbide MOSFET on the market in TO247-4 packaging. Additional Kelvin induction pins can be connected to the MOSFET source to optimize switching efficiency and achieve higher power density.
DMWS120H100SM4 operates at high voltage (1200V) and swab current (up to 37A) while maintaining low thermal conductivity (RθJC = 0.6°C/W), ideal for applications operating in harsh environments. This MOSFET has a low (typical) RDS(ON) of 80 Mω (for a 15V gate drive), which minimizes conduction loss and improves efficiency.
The gate charge of this device is only 52nC, which reduces switching loss and package temperature. The device meets the demand for higher efficiency and power density for industrial motor drives, solar inverters, data center and telecommunication power supplies, DC-DC converters and electric vehicle (EV) battery chargers.
