Infineon Technologies AG has released a new CoolSiC™ technology, the CoolSiC™ MOSFET 1200 V M1H. This advanced silicon carbide (SiC) chip is used in the popular Easy module family, as well as in discrete packages based on .XT interconnect technology, with a very broad product portfolio. The M1H chip is highly flexible and suitable for solar systems that must meet peak power demands, such as photovoltaic inverters. At the same time, this chip is also ideal for fast charging of electric vehicles, energy storage systems and other industrial applications.
Recent advances in CoolSiC technology have resulted in a significantly larger gate drive voltage window, resulting in lower on-resistance for a given die area. At the same time, as the gate operating window widens, the gate is well tolerant to driver- and layout-related voltage spikes, even at higher switching frequencies. In addition to M1H chip technology, different types of products can also achieve higher power density by using different packages, providing design engineers with more choices and helping them improve application performance.
Easy modules enable higher power density
The M1H will be integrated into the popular Easy series to further optimize the Easy 1B and 2B modules. In addition, Infineon will introduce a new product utilizing the new 1200 V CoolSiCTM MOSFET technology and enhanced Easy 3B modules. The introduction of new chip sizes maximizes flexibility for a broad industrial product portfolio. Using the M1H chip can significantly reduce the on-resistance of the module, making the device more reliable and efficient.
In addition, the M1H chip has a maximum junction temperature of 175°C, which provides better overload capability, enabling higher power density while extending the system's safe operating area. Compared to its predecessor, the M1 chip, the M1H chip achieves lower internal gate resistance (RG), which facilitates easy optimization of switching characteristics. The M1H chip maintains its dynamic characteristics.
Discrete package with ultra-low on-resistance
In addition to the integrated Easy module family, the CoolSiCTM MOSFET 1200 V M1H portfolio is available in TO247-3 and TO247-4 discrete packages with extremely low on-resistance values, 7 mΩ, 14 mΩ and 20 mΩ depending on the model mΩ. With a maximum gate-to-source voltage as low as -10 V, these new devices have improved gate voltage overshoot and undershoot, and achieve good avalanche breakdown and short-circuit withstand capability for ease of product design.
The Infineon .XT interconnect technology, previously introduced in the D2PAK-7L package, is now also available in the TO package. Compared with standard interconnect technology, its heat dissipation capacity has been improved by more than 30%. This cooling performance boost is a huge benefit, increasing output power by up to 15%. In addition, it can increase switching frequency, further reducing the passive components required in applications such as electric vehicle (EV) charging, energy storage or photovoltaic systems, thereby increasing power density and reducing system cost. .XT interconnect technology reduces SiC MOSFET junction temperature without changing system operating conditions, thus greatly extending system life and improving power cycling capability. This is also a key requirement for equipment such as servo drives.
The newly launched 1200 V CoolSiCTM MOSFET M1H chip will further unleash the application potential of SiC technology, promote the development and utilization of clean energy on a global scale, and improve energy efficiency.
