New range of power devices | 黑森尔电子
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New range of power devices

Technology Cover
发布日期: 2018-01-29, Rohm Semiconductor
Choosing the right power equipment can severely impact energy savings and reduce system costs in various systems. Through new developments brought by the Group's extensive research and design programs, ROHM can not only provide customers with a full range of efficient and compact products suitable for their applications, but also provide complete solutions for power channels. The company will be demonstrating power semiconductor solutions at PCIM , including five categories : "SiC", "Power IC", "Automotive", "Industrial" and "Motor Drive". The new series of isolated gate driver ICs for power MOSFETs expands the existing product range, providing new solutions to increase flexibility and improve the design of industrial and automotive power systems. The first product in this series is an isolated, 3.75KV AEC-Q100 gate driver device specifically designed to drive SiC power MOSFETs. It has an output current of 4A, a built-in active Miller clamp function to prevent parasitic conduction effects, and integrated UVLO optimized to drive its SiC MOSFET. Optimized UVLO improves system reliability-a very sensitive subject in automotive and industrial applications. In addition, the integration of this function minimizes the external BOM, reducing PCB layout space and design workload. The new 1200V 400A and 600A all-SiC power modules combine the latest SiC SBDs and MOSFETs with a new low-inductance structure. The provided good flatness substrate function can reduce the thermal resistance value between the module case and the heat sink, thereby achieving a smaller size cooling system. These characteristics make them an ideal replacement for 400A, 600A and even 1000A Si IGBT power modules, depending on the customer's switching frequency. The company's new third-generation 650V IGBT, based on thinner wafers, field stop and advanced proprietary Trench Gate structure technology, is overcoming the compromise between saturation voltage and turn-off loss characteristics. Most importantly, the measurement results show lower noise performance while maintaining a high switching speed. The new generation includes two variants: the safety of this series of RGTVs with advanced short circuits, and the charge, capacitance and extremely low switching losses of the RGW series with low-gate converters . Both are integrated with very fast and soft-recovery FRDs to provide the best efficiency for the application.

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