STMicroelectronics 40V MOSFET transistors STL320N4LF8 and STL325N4LF8AG reduce on-resistance and switching losses while optimizing body parasitic diode characteristics to reduce energy consumption and noise in power conversion, motor control and power distribution circuits.
The new 40V N-channel enhancement mode MOSFET utilizes the latest generation STPOWER STripFET F8 oxide-filled trench technology to achieve an excellent figure of merit. At a gate-source voltage (VGS) of 10V, the maximum on-resistance (Rds(on)) of the STL320N4LF8 and STL325N4LF8AG are 0.8 mΩ and 0.75 mΩ, respectively. The very low resistance per die area (Rds(on)) of the new MOSFETs allows the space-saving and thermally efficient PowerFLAT 5x6 package.
ST's advanced STripFET F8 technology offers exceptional switching speed and low chip capacitance to minimize dynamic parameters such as gate-to-drain charge, improving system energy efficiency. Designers can choose the switching frequency from 600kHz to 1MHz, allowing the use of smaller capacitors and magnetics, saving circuit size and bill of materials cost, and increasing the power density of the end application
Proper output capacitors and associated equivalent series resistance prevent drain-source voltage spikes and ensure shorter dips and oscillations when the tube is turned off. With this and the soft recovery characteristics of the body diode, the STL320N4LF8 and STL325N4LF8AG emit less electromagnetic interference (EMI) than other similar devices on the market. In addition, the body parasitic diode has a small reverse recovery charge, which minimizes energy losses in hard-switching topologies.
The gate threshold voltage (VGS(th)) is tightly controlled in the STL320N4LF8 and STL325N4LF8AG to ensure that the threshold voltage difference between devices is small to allow paralleling multiple MOSFET power transistors to handle higher currents. Short-circuit withstand capability is also excellent, with currents up to 1000A (pulses shorter than 10µs). The STL320N4LF8 and STL325N4LF8AG are the first industry- and AEC-Q101 automotive-qualified STPOWER STripFET F8 MOSFET devices, respectively, ideal for battery-powered products and computing, telecom, lighting, and general-purpose power conversion applications.
