ST's STPOWER MDmesh M9 and DM9 silicon-based N-channel superjunction multi-drain power MOSFET transistors are ideal for designing switch-mode power supplies (SMPS) for data center servers, 5G infrastructure, and flat-panel televisions.
The first two devices to hit the market are the 650V STP65N045M9 and the 600V STP60N043DM9. Both products have very low on-resistance per unit area (RDS(on)), which can greatly improve power density and help reduce system size. Both products have class-leading maximum on-resistance (RDS(on)max) of 45mΩ for the STP65N045M9 and 43mΩ for the STP60N043DM9. With very low gate charge (Qg), typically 80nC at 400V drain voltage, both devices have the best RDS(on)max x Qg figure of merit (FoM) available on the market today.
The gate threshold voltage (VGS(th)) of the STP65N045M9 is typically 3.7V and the typical value of the STP60N043DM9 is 4.0V, which greatly reduces the switching losses on-off compared to the previous generation MDmesh M5 and M6/DM6. The reverse recovery charge (Qrr) and reverse recovery time (trr) of the MDmesh M9 and DM9 series are also very low, which helps to further improve energy efficiency and switching performance.
Another feature of ST's latest high-voltage MDmesh technology is the addition of a platinum diffusion process that ensures fast switching of intrinsic body diodes. The diode recovery slope (dv/dt) peak is higher than earlier processes. The full range of MDmesh DM9 products are very robust, withstanding dv/dt slopes up to 120V/ns at 400V.
ST's new MDmesh M9 and DM9 products, the STP65N045M9 and STP60N043DM9, both in TO-220 power packages, are in production now and will be available from distributors by the end of the second quarter of 2022. Standard mount and through-hole packages will also be added by the end of 2022.
