页 26 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品 | 黑森尔电子
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晶体管 - FET，MOSFET - 阵列

记录 3,259
页  26/109
图片
零件编号
制造商
描述
封装
库存
数量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRF7755
Infineon Technologies

MOSFET 2P-CH 20V 3.9A 8-TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A
  • Rds On (Max) @ Id, Vgs: 51 mOhm @ 3.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: 8-TSSOP (0.173", 4.40mm Width)
库存95,316
Logic Level Gate
20V
3.9A
51 mOhm @ 3.7A, 4.5V
1.2V @ 250µA
17nC @ 4.5V
1090pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot IRF7379
Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存182,868
Standard
30V
5.8A, 4.3A
45 mOhm @ 5.8A, 10V
1V @ 250µA
25nC @ 10V
520pF @ 25V
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
BUK7K6R2-40E/CX
NXP

MOSFET 2N-CH 56LFPAK

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,640
-
-
-
-
-
-
-
-
-
-
-
-
2N7334
Microsemi Corporation

MOSFET 4N-CH 100V 1A MO-036AB

  • FET Type: 4 N-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1A
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: MO-036AB
封装: 14-DIP (0.300", 7.62mm)
库存7,552
Standard
100V
1A
700 mOhm @ 600mA, 10V
4V @ 250µA
60nC @ 10V
-
1.4W
-55°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
MO-036AB
TPC8221-H,LQ(S
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 6A 8SOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: 8-SOIC (0.154", 3.90mm Width)
库存7,808
Standard
30V
6A
25 mOhm @ 3A, 10V
2.3V @ 100µA
12nC @ 10V
830pF @ 10V
450mW
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SI5905BDC-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 8V 4A 1206-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 4V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
封装: 8-SMD, Flat Lead
库存2,640
Logic Level Gate
8V
4A
80 mOhm @ 3.3A, 4.5V
1V @ 250µA
11nC @ 8V
350pF @ 4V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
SI5519DU-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 20V 6A CHIPFETs

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
  • Power - Max: 10.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? ChipFET? Dual
  • Supplier Device Package: PowerPAK? ChipFet Dual
封装: PowerPAK? ChipFET? Dual
库存6,064
Standard
20V
6A
36 mOhm @ 6.1A, 4.5V
1.8V @ 250µA
17.5nC @ 10V
660pF @ 10V
10.4W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? ChipFET? Dual
PowerPAK? ChipFet Dual
hot DMC3036LSD-13
Diodes Incorporated

MOSFET N/P-CH 30V 5A/4.5A 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.9A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 431pF @ 15V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: 8-SOIC (0.154", 3.90mm Width)
库存1,323,240
Logic Level Gate
30V
5A, 4.5A
36 mOhm @ 6.9A, 10V
2.1V @ 250µA
7.9nC @ 10V
431pF @ 15V
1.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot SI5933DC-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 2.7A 1206-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
封装: 8-SMD, Flat Lead
库存5,265,276
Logic Level Gate
20V
2.7A
110 mOhm @ 2.7A, 4.5V
1V @ 250µA
7.7nC @ 4.5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
hot FDC6432SH
Fairchild/ON Semiconductor

MOSFET N/P-CH 30V/12V SSOT-6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V, 12V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A, 2.5A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 15V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: SuperSOT?-6
封装: SOT-23-6 Thin, TSOT-23-6
库存120,012
Logic Level Gate
30V, 12V
2.4A, 2.5A
90 mOhm @ 2.4A, 10V
3V @ 1mA
3.5nC @ 5V
270pF @ 15V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
SuperSOT?-6
PMWD16UN,518
NXP

MOSFET 2N-CH 20V 9.9A 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 9.9A
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 23.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1366pF @ 16V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: 8-TSSOP (0.173", 4.40mm Width)
库存3,680
Logic Level Gate
20V
9.9A
19 mOhm @ 3.5A, 4.5V
700mV @ 1mA
23.6nC @ 4.5V
1366pF @ 16V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot STS3DPF60L
STMicroelectronics

MOSFET 2P-CH 60V 3A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存90,972
Logic Level Gate
60V
3A
120 mOhm @ 1.5A, 10V
1.5V @ 250µA
15.7nC @ 4.5V
630pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
IPG20N04S4L08AATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 22µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V
  • Power - Max: 54W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-10
封装: 8-PowerVDFN
库存6,992
Logic Level Gate
40V
20A
8.2 mOhm @ 17A, 10V
2.2V @ 22µA
39nC @ 10V
3050pF @ 25V
54W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-10
BSZ215CHXTMA1
Infineon Technologies

MOSFET N/P-CH 20V 8TDSON

  • FET Type: N and P-Channel Complementary
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 5.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 110µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PG-TSDSON-8-FL
封装: 8-PowerTDFN
库存4,944
Logic Level Gate, 2.5V Drive
20V
5.1A, 3.2A
55 mOhm @ 5.1A, 4.5V
1.4V @ 110µA
2.8nC @ 4.5V
419pF @ 10V
2.5W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PG-TSDSON-8-FL
hot IRF7309PBF
Infineon Technologies

MOSFET N/P-CH 30V 4A/3A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A, 3A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存3,904
Standard
30V
4A, 3A
50 mOhm @ 2.4A, 10V
1V @ 250µA
25nC @ 4.5V
520pF @ 15V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
BSL205NH6327XTSA1
Infineon Technologies

MOSFET 2N-CH 20V 2.5A 6TSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 11µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: PG-TSOP6-6
封装: SOT-23-6 Thin, TSOT-23-6
库存5,456
Logic Level Gate, 4.5V Drive
20V
2.5A
50 mOhm @ 2.5A, 4.5V
1.2V @ 11µA
3.2nC @ 4.5V
419pF @ 10V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
PG-TSOP6-6
APTC60AM35SCTG
Microsemi Corporation

MOSFET 2N-CH 600V 72A SP4

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 72A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 36A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
  • Power - Max: 416W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
封装: SP4
库存4,736
Standard
600V
72A
35 mOhm @ 36A, 10V
3.9V @ 2mA
518nC @ 10V
14000pF @ 25V
416W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
APTC80H29T3G
Microsemi Corporation

MOSFET 4N-CH 800V 15A SP3

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
  • Power - Max: 156W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
封装: SP3
库存4,080
Standard
800V
15A
290 mOhm @ 7.5A, 10V
3.9V @ 1mA
90nC @ 10V
2254pF @ 25V
156W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
hot AO6601
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 6-TSOP

  • FET Type: N and P-Channel Complementary
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.3A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 15V
  • Power - Max: 1.15W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
封装: SC-74, SOT-457
库存11,386,968
Logic Level Gate
30V
3.4A, 2.3A
60 mOhm @ 3.4A, 10V
1.5V @ 250µA
12nC @ 10V
285pF @ 15V
1.15W
-55°C ~ 150°C (TJ)
Surface Mount
SC-74, SOT-457
6-TSOP
SQJB70EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 100V POWERPAK SO-8L

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
  • Power - Max: 27W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
封装: PowerPAK? SO-8 Dual
库存5,088
Standard
100V
11.3A (Tc)
95 mOhm @ 4A, 10V
3.5V @ 250µA
7nC @ 10V
220pF @ 25V
27W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
hot SIZ900DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 24A POWERPAIR

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 24A, 28A
  • Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 19.4A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 15V
  • Power - Max: 48W, 100W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerPair?
  • Supplier Device Package: 6-PowerPair?
封装: 6-PowerPair?
库存125,028
Logic Level Gate
30V
24A, 28A
7.2 mOhm @ 19.4A, 10V
2.4V @ 250µA
45nC @ 10V
1830pF @ 15V
48W, 100W
-55°C ~ 150°C (TJ)
Surface Mount
6-PowerPair?
6-PowerPair?
SH8K41GZETB
Rohm Semiconductor

MOSFET 2N-CH 80V 3.4A 8SOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
  • Power - Max: 1.4W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: 8-SOIC (0.154", 3.90mm Width)
库存7,408
Logic Level Gate
80V
3.4A
130 mOhm @ 3.4A, 10V
2.5V @ 1mA
6.6nC @ 5V
600pF @ 10V
1.4W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
CSD87333Q3D
Texas Instruments

MOSFET 2N-CH 30V 15A 8SON

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate, 5V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Rds On (Max) @ Id, Vgs: 14.3 mOhm @ 4A, 8V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 662pF @ 15V
  • Power - Max: 6W
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-VSON (3.3x3.3)
封装: 8-PowerTDFN
库存6,304
Logic Level Gate, 5V Drive
30V
15A
14.3 mOhm @ 4A, 8V
1.2V @ 250µA
4.6nC @ 4.5V
662pF @ 15V
6W
125°C (TJ)
Surface Mount
8-PowerTDFN
8-VSON (3.3x3.3)
APTMC120AM16CD3AG
Microsemi Corporation

MOSFET 2N-CH 1200V 131A D3

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 131A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 100A, 20V
  • Vgs(th) (Max) @ Id: 2.2V @ 5mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 246nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 1000V
  • Power - Max: 625W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: D-3 Module
  • Supplier Device Package: D3
封装: D-3 Module
库存6,640
Standard
1200V (1.2kV)
131A
20 mOhm @ 100A, 20V
2.2V @ 5mA (Typ)
246nC @ 20V
4750pF @ 1000V
625W
-40°C ~ 150°C (TJ)
Chassis Mount
D-3 Module
D3
APTM50AM38STG
Microsemi Corporation

MOSFET 2N-CH 500V 90A SP4

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 90A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
  • Power - Max: 694W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
封装: SP4
库存6,080
Standard
500V
90A
45 mOhm @ 45A, 10V
5V @ 5mA
246nC @ 10V
11200pF @ 25V
694W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
FDMD8260LET60
Fairchild/ON Semiconductor

MOSFET 2N-CH 60V 15A

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5245pF @ 30V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-PowerWDFN
  • Supplier Device Package: 12-Power3.3x5
封装: 12-PowerWDFN
库存4,864
Standard
60V
15A
5.8 mOhm @ 15A, 10V
3V @ 250µA
68nC @ 10V
5245pF @ 30V
1.1W
-55°C ~ 175°C (TJ)
Surface Mount
12-PowerWDFN
12-Power3.3x5
hot SH8K22TB1
Rohm Semiconductor

MOSFET 2N-CH 45V 4.5A SOP8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: 8-SOIC (0.154", 3.90mm Width)
库存113,208
Logic Level Gate
45V
4.5A
46 mOhm @ 4.5A, 10V
2.5V @ 1mA
9.6nC @ 5V
550pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot EM6M1T2R
Rohm Semiconductor

MOSFET N/P-CH 30V/20V EMT6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA, 200mA
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
封装: SOT-563, SOT-666
库存384,000
Logic Level Gate
30V, 20V
100mA, 200mA
8 Ohm @ 10mA, 4V
-
0.9nC @ 4.5V
13pF @ 5V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
EMT6
hot SI1035X-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 20V SC-89

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89-6
封装: SOT-563, SOT-666
库存457,200
Logic Level Gate
20V
180mA, 145mA
5 Ohm @ 200mA, 4.5V
400mV @ 250µA (Min)
0.75nC @ 4.5V
-
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SC-89-6
hot IRF7351PBF
Infineon Technologies

MOSFET 2N-CH 60V 8A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 17.8 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 30V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存5,952
Logic Level Gate
60V
8A
17.8 mOhm @ 8A, 10V
4V @ 50µA
36nC @ 10V
1330pF @ 30V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO