页 71 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AON2801L	Alpha & Omega Semiconductor Inc.	MOSFET P-CH DUAL DFN FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-DFN (2x2)	封装: 6-WDFN Exposed Pad	库存6,592	Standard	20V	3A (Ta)	120 mOhm @ 3A, 4.5V	1V @ 250µA	6.5nC @ 4.5V	700pF @ 10V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-DFN (2x2)
MP6K12TCR	Rohm Semiconductor	MOSFET 2N-CH 30V 5A MPT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: MPT6	封装: 6-SMD, Flat Leads	库存5,072	Logic Level Gate	30V	5A	42 mOhm @ 5A, 10V	2.5V @ 1mA	4nC @ 5V	250pF @ 10V	2W	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	MPT6
SQJ941EP-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 30V 8A PPAK SO-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V Power - Max: 55W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存7,296	Logic Level Gate	30V	8A	24 mOhm @ 9A, 10V	2.5V @ 250µA	55nC @ 10V	1800pF @ 10V	55W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SI5905DC-T1-E3	Vishay Siliconix	MOSFET 2P-CH 8V 3A 1206-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	封装: 8-SMD, Flat Lead	库存177,468	Logic Level Gate	8V	3A	90 mOhm @ 3A, 4.5V	450mV @ 250µA (Min)	9nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
SI1557DH-T1-E3	Vishay Siliconix	MOSFET N/P-CH 12V 1.2A SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 1.2A, 770mA Rds On (Max) @ Id, Vgs: 235 mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 470mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	封装: 6-TSSOP, SC-88, SOT-363	库存72,000	Logic Level Gate	12V	1.2A, 770mA	235 mOhm @ 1.2A, 4.5V	1V @ 100µA	1.2nC @ 4.5V	-	470mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
NTLUD3191PZTBG	ON Semiconductor	MOSFET 2P-CH 20V 1.1A 6UDFN FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.1A Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: 6-UDFN (1.6x1.6)	封装: 6-UFDFN Exposed Pad	库存3,520	Logic Level Gate	20V	1.1A	250 mOhm @ 1.5A, 4.5V	1V @ 250µA	3.5nC @ 4.5V	160pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	6-UDFN (1.6x1.6)
FDS6898A_NF40	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 9.4A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.4A Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,648	Logic Level Gate	20V	9.4A	14 mOhm @ 9.4A, 4.5V	1.5V @ 250µA	23nC @ 4.5V	1821pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI1033X-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 0.145A SOT563F FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 145mA Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	封装: SOT-563, SOT-666	库存324,000	Logic Level Gate	20V	145mA	8 Ohm @ 150mA, 4.5V	1.2V @ 250µA	1.5nC @ 4.5V	-	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
BSD235NH6327XTSA1	Infineon Technologies	MOSFET 2N-CH 20V 0.95A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 950mA Rds On (Max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1.6µA Gate Charge (Qg) (Max) @ Vgs: 0.32nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 63pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	封装: 6-VSSOP, SC-88, SOT-363	库存3,248	Logic Level Gate	20V	950mA	350 mOhm @ 950mA, 4.5V	1.2V @ 1.6µA	0.32nC @ 4.5V	63pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
APTM100H45FT3G	Microsemi Corporation	MOSFET 4N-CH 1000V 18A SP3 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 18A Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V Power - Max: 357W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	封装: SP3	库存5,568	Standard	1000V (1kV)	18A	540 mOhm @ 9A, 10V	5V @ 2.5mA	154nC @ 10V	4350pF @ 25V	357W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
SI4808DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 5.7A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.7A Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存2,096	Logic Level Gate	30V	5.7A	22 mOhm @ 7.5A, 10V	800mV @ 250µA (Min)	20nC @ 10V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AON6850	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 100V 5A 8DFN FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 35 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 50V Power - Max: 1.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Supplier Device Package: 8-DFN (5x6)	封装: 8-PowerSMD, Flat Leads	库存3,424	Standard	100V	5A	35 mOhm @ 5A, 10V	4V @ 250µA	29nC @ 10V	1840pF @ 50V	1.7W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerSMD, Flat Leads	8-DFN (5x6)
SP8K31TB1	Rohm Semiconductor	MOSFET 2N-CH 60V 3.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 120 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存5,872	Logic Level Gate	60V	3.5A	120 mOhm @ 3.5A, 10V	2.5V @ 1mA	5.2nC @ 5V	250pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SP8K1FU6TB	Rohm Semiconductor	MOSFET 2N-CH 30V 5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存63,084	Logic Level Gate	30V	5A	51 mOhm @ 5A, 10V	2.5V @ 1mA	5.5nC @ 5V	230pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
AON3816	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 4A 8-DFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-DFN (2.9x2.3)	封装: 8-SMD, Flat Lead	库存167,988	Logic Level Gate	20V	-	22 mOhm @ 4A, 4.5V	1.1V @ 250µA	13nC @ 4.5V	1100pF @ 10V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-DFN (2.9x2.3)
DMN3032LFDB-7	Diodes Incorporated	MOSFET 2N-CH 30V 6.2A UDFN2020-6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.2A Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	封装: 6-UDFN Exposed Pad	库存5,584	Standard	30V	6.2A	30 mOhm @ 5.8A, 10V	2V @ 250µA	10.6nC @ 10V	500pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
ALD110814PCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 16DIP FET Type: 4 N-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 5.4V Vgs(th) (Max) @ Id: 1.42V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	封装: 16-DIP (0.300", 7.62mm)	库存6,624	Standard	10.6V	12mA, 3mA	500 Ohm @ 5.4V	1.42V @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
AON6978	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 20A/28A 8-DFN FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A, 28A Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V Power - Max: 3.6W, 4.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN (5x6)	封装: 8-PowerVDFN	库存180,000	Logic Level Gate	30V	20A, 28A	5.7 mOhm @ 20A, 10V	2.2V @ 250µA	25nC @ 10V	1010pF @ 15V	3.6W, 4.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN (5x6)
DMHC3025LSDQ-13	Diodes Incorporated	MOSFET 2N/2P-CH 30V 8SOIC FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 4.2A Rds On (Max) @ Id, Vgs: 25 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存6,256	Standard	30V	6A, 4.2A	25 mOhm @ 5A, 10V	2V @ 250µA	11.7nC @ 10V	590pF @ 15V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7314TRPBF	Infineon Technologies	MOSFET 2P-CH 20V 5.3A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 58 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存2,090,124	Logic Level Gate	20V	5.3A	58 mOhm @ 2.9A, 4.5V	700mV @ 250µA	29nC @ 4.5V	780pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NX3020NAKV,115	Nexperia USA Inc.	MOSFET 2N-CH 30V 0.2A SOT666 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Power - Max: 375mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	封装: SOT-563, SOT-666	库存3,488	Logic Level Gate	30V	200mA	4.5 Ohm @ 100mA, 10V	1.5V @ 250µA	0.44nC @ 4.5V	13pF @ 10V	375mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-666
STL8DN10LF3	STMicroelectronics	MOSFET 2N-CH 100V 20A 5X6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 25V Power - Max: 70W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6)	封装: 8-PowerVDFN	库存2,880	Logic Level Gate	100V	20A	35 mOhm @ 4A, 10V	3V @ 250µA	20.5nC @ 10V	970pF @ 25V	70W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)
TT8J11TCR	Rohm Semiconductor	MOSFET 2P-CH 12V 3.5A TSST8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 6V Power - Max: 650mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-TSST	封装: 8-SMD, Flat Lead	库存86,508	Logic Level Gate, 1.5V Drive	12V	3.5A	43 mOhm @ 3.5A, 4.5V	1V @ 1mA	22nC @ 4.5V	2600pF @ 6V	650mW	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-TSST
ZXMC10A816N8TC	Diodes Incorporated	MOSFET N/P-CH 100V 2A 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 230 mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 497pF @ 50V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存6,888	Logic Level Gate	100V	2A	230 mOhm @ 1A, 10V	2.4V @ 250µA	9.2nC @ 10V	497pF @ 50V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMG8601UFG-7	Diodes Incorporated	MOSFET 2N-CH 20V 6.1A DFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.1A Rds On (Max) @ Id, Vgs: 23 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.05V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V Power - Max: 920mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Supplier Device Package: U-DFN3030-8	封装: 8-PowerUDFN	库存27,360	Logic Level Gate	20V	6.1A	23 mOhm @ 6.5A, 4.5V	1.05V @ 250µA	8.8nC @ 4.5V	143pF @ 10V	920mW	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerUDFN	U-DFN3030-8
SSM6N43FU,LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 0.5A US6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Power - Max: 200mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封装: 6-TSSOP, SC-88, SOT-363	库存27,318	Logic Level Gate, 1.5V Drive	20V	500mA	630 mOhm @ 200mA, 5V	1V @ 1mA	1.23nC @ 4V	46pF @ 10V	200mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
SI7288DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 40V 20A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 19 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 20V Power - Max: 15.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存104,772	Standard	40V	20A	19 mOhm @ 10A, 10V	2.8V @ 250µA	15nC @ 10V	565pF @ 20V	15.6W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
FDS4935BZ	Fairchild/ON Semiconductor	MOSFET 2P-CH 30V 6.9A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存59,400	Logic Level Gate	30V	6.9A	22 mOhm @ 6.9A, 10V	3V @ 250µA	40nC @ 10V	1360pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDC6333C	Fairchild/ON Semiconductor	MOSFET N/P-CH 30V 2.5A/2A SSOT6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A, 2A Rds On (Max) @ Id, Vgs: 95 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT?-6	封装: SOT-23-6 Thin, TSOT-23-6	库存86,856	Logic Level Gate	30V	2.5A, 2A	95 mOhm @ 2.5A, 10V	3V @ 250µA	6.6nC @ 10V	282pF @ 15V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT?-6
SI1922EDH-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 1.3A SOT-363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 198 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	封装: 6-TSSOP, SC-88, SOT-363	库存722,952	Logic Level Gate	20V	1.3A	198 mOhm @ 1A, 4.5V	1V @ 250µA	2.5nC @ 8V	-	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)

AON2801L

Alpha & Omega Semiconductor Inc.

MOSFET P-CH DUAL DFN

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-DFN (2x2)

封装: 6-WDFN Exposed Pad

库存6,592

Standard

20V

3A (Ta)

120 mOhm @ 3A, 4.5V

1V @ 250µA

6.5nC @ 4.5V

700pF @ 10V

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-DFN (2x2)

MP6K12TCR

Rohm Semiconductor

MOSFET 2N-CH 30V 5A MPT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: MPT6

封装: 6-SMD, Flat Leads

库存5,072

Logic Level Gate

30V

5A

42 mOhm @ 5A, 10V

2.5V @ 1mA

4nC @ 5V

250pF @ 10V

2W

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

MPT6

SQJ941EP-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 30V 8A PPAK SO-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Power - Max: 55W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存7,296

Logic Level Gate

30V

8A

24 mOhm @ 9A, 10V

2.5V @ 250µA

55nC @ 10V

1800pF @ 10V

55W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SI5905DC-T1-E3

Vishay Siliconix

MOSFET 2P-CH 8V 3A 1206-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

封装: 8-SMD, Flat Lead

库存177,468

Logic Level Gate

8V

3A

90 mOhm @ 3A, 4.5V

450mV @ 250µA (Min)

9nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

SI1557DH-T1-E3

Vishay Siliconix

MOSFET N/P-CH 12V 1.2A SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.2A, 770mA
Rds On (Max) @ Id, Vgs: 235 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 470mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

封装: 6-TSSOP, SC-88, SOT-363

库存72,000

Logic Level Gate

12V

1.2A, 770mA

235 mOhm @ 1.2A, 4.5V

1V @ 100µA

1.2nC @ 4.5V

-

470mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

NTLUD3191PZTBG

ON Semiconductor

MOSFET 2P-CH 20V 1.1A 6UDFN

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A
Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: 6-UDFN (1.6x1.6)

封装: 6-UFDFN Exposed Pad

库存3,520

Logic Level Gate

20V

1.1A

250 mOhm @ 1.5A, 4.5V

1V @ 250µA

3.5nC @ 4.5V

160pF @ 10V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN Exposed Pad

6-UDFN (1.6x1.6)

FDS6898A_NF40

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 9.4A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.4A
Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,648

Logic Level Gate

20V

9.4A

14 mOhm @ 9.4A, 4.5V

1.5V @ 250µA

23nC @ 4.5V

1821pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI1033X-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 0.145A SOT563F

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 145mA
Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

封装: SOT-563, SOT-666

库存324,000

Logic Level Gate

20V

145mA

8 Ohm @ 150mA, 4.5V

1.2V @ 250µA

1.5nC @ 4.5V

-

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

BSD235NH6327XTSA1

Infineon Technologies

MOSFET 2N-CH 20V 0.95A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 950mA
Rds On (Max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
Gate Charge (Qg) (Max) @ Vgs: 0.32nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 63pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

封装: 6-VSSOP, SC-88, SOT-363

库存3,248

Logic Level Gate

20V

950mA

350 mOhm @ 950mA, 4.5V

1.2V @ 1.6µA

0.32nC @ 4.5V

63pF @ 10V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

APTM100H45FT3G

Microsemi Corporation

MOSFET 4N-CH 1000V 18A SP3

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Power - Max: 357W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

封装: SP3

库存5,568

Standard

1000V (1kV)

18A

540 mOhm @ 9A, 10V

5V @ 2.5mA

154nC @ 10V

4350pF @ 25V

357W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

SI4808DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 5.7A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存2,096

Logic Level Gate

30V

5.7A

22 mOhm @ 7.5A, 10V

800mV @ 250µA (Min)

20nC @ 10V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AON6850

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 100V 5A 8DFN

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 50V
Power - Max: 1.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Supplier Device Package: 8-DFN (5x6)

封装: 8-PowerSMD, Flat Leads

库存3,424

Standard

100V

5A

35 mOhm @ 5A, 10V

4V @ 250µA

29nC @ 10V

1840pF @ 50V

1.7W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerSMD, Flat Leads

8-DFN (5x6)

SP8K31TB1

Rohm Semiconductor

MOSFET 2N-CH 60V 3.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存5,872

Logic Level Gate

60V

3.5A

120 mOhm @ 3.5A, 10V

2.5V @ 1mA

5.2nC @ 5V

250pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SP8K1FU6TB

Rohm Semiconductor

MOSFET 2N-CH 30V 5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存63,084

Logic Level Gate

30V

5A

51 mOhm @ 5A, 10V

2.5V @ 1mA

5.5nC @ 5V

230pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

AON3816

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 4A 8-DFN

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-DFN (2.9x2.3)

封装: 8-SMD, Flat Lead

库存167,988

Logic Level Gate

20V

-

22 mOhm @ 4A, 4.5V

1.1V @ 250µA

13nC @ 4.5V

1100pF @ 10V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-DFN (2.9x2.3)

DMN3032LFDB-7

Diodes Incorporated

MOSFET 2N-CH 30V 6.2A UDFN2020-6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

封装: 6-UDFN Exposed Pad

库存5,584

Standard

30V

6.2A

30 mOhm @ 5.8A, 10V

2V @ 250µA

10.6nC @ 10V

500pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

ALD110814PCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16DIP

FET Type: 4 N-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500 Ohm @ 5.4V
Vgs(th) (Max) @ Id: 1.42V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

封装: 16-DIP (0.300", 7.62mm)

库存6,624

Standard

10.6V

12mA, 3mA

500 Ohm @ 5.4V

1.42V @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

AON6978

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 20A/28A 8-DFN

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A, 28A
Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
Power - Max: 3.6W, 4.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)

封装: 8-PowerVDFN

库存180,000

Logic Level Gate

30V

20A, 28A

5.7 mOhm @ 20A, 10V

2.2V @ 250µA

25nC @ 10V

1010pF @ 15V

3.6W, 4.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-DFN (5x6)

DMHC3025LSDQ-13

Diodes Incorporated

MOSFET 2N/2P-CH 30V 8SOIC

FET Type: 2 N and 2 P-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.2A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存6,256

Standard

30V

6A, 4.2A

25 mOhm @ 5A, 10V

2V @ 250µA

11.7nC @ 10V

590pF @ 15V

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7314TRPBF

Infineon Technologies

MOSFET 2P-CH 20V 5.3A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 58 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存2,090,124

Logic Level Gate

20V

5.3A

58 mOhm @ 2.9A, 4.5V

700mV @ 250µA

29nC @ 4.5V

780pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NX3020NAKV,115

Nexperia USA Inc.

MOSFET 2N-CH 30V 0.2A SOT666

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Power - Max: 375mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666

封装: SOT-563, SOT-666

库存3,488

Logic Level Gate

30V

200mA

4.5 Ohm @ 100mA, 10V

1.5V @ 250µA

0.44nC @ 4.5V

13pF @ 10V

375mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-666

STL8DN10LF3

STMicroelectronics

MOSFET 2N-CH 100V 20A 5X6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 25V
Power - Max: 70W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat? (5x6)

封装: 8-PowerVDFN

库存2,880

Logic Level Gate

100V

20A

35 mOhm @ 4A, 10V

3V @ 250µA

20.5nC @ 10V

970pF @ 25V

70W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PowerFlat? (5x6)

TT8J11TCR

Rohm Semiconductor

MOSFET 2P-CH 12V 3.5A TSST8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 6V
Power - Max: 650mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-TSST

封装: 8-SMD, Flat Lead

库存86,508

Logic Level Gate, 1.5V Drive

12V

3.5A

43 mOhm @ 3.5A, 4.5V

1V @ 1mA

22nC @ 4.5V

2600pF @ 6V

650mW

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-TSST

ZXMC10A816N8TC

Diodes Incorporated

MOSFET N/P-CH 100V 2A 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 230 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 497pF @ 50V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存6,888

Logic Level Gate

100V

2A

230 mOhm @ 1A, 10V

2.4V @ 250µA

9.2nC @ 10V

497pF @ 50V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMG8601UFG-7

Diodes Incorporated

MOSFET 2N-CH 20V 6.1A DFN

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.1A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Power - Max: 920mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Supplier Device Package: U-DFN3030-8

封装: 8-PowerUDFN

库存27,360

Logic Level Gate

20V

6.1A

23 mOhm @ 6.5A, 4.5V

1.05V @ 250µA

8.8nC @ 4.5V

143pF @ 10V

920mW

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerUDFN

U-DFN3030-8

SSM6N43FU,LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.5A US6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Power - Max: 200mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封装: 6-TSSOP, SC-88, SOT-363

库存27,318

Logic Level Gate, 1.5V Drive

20V

500mA

630 mOhm @ 200mA, 5V

1V @ 1mA

1.23nC @ 4V

46pF @ 10V

200mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

SI7288DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 40V 20A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 20V
Power - Max: 15.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存104,772

Standard

40V

20A

19 mOhm @ 10A, 10V

2.8V @ 250µA

15nC @ 10V

565pF @ 20V

15.6W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

FDS4935BZ

Fairchild/ON Semiconductor

MOSFET 2P-CH 30V 6.9A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存59,400

Logic Level Gate

30V

6.9A

22 mOhm @ 6.9A, 10V

3V @ 250µA

40nC @ 10V

1360pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDC6333C

Fairchild/ON Semiconductor

MOSFET N/P-CH 30V 2.5A/2A SSOT6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 2A
Rds On (Max) @ Id, Vgs: 95 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT?-6

封装: SOT-23-6 Thin, TSOT-23-6

库存86,856

Logic Level Gate

30V

2.5A, 2A

95 mOhm @ 2.5A, 10V

3V @ 250µA

6.6nC @ 10V

282pF @ 15V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SuperSOT?-6

SI1922EDH-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 1.3A SOT-363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 198 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

封装: 6-TSSOP, SC-88, SOT-363

库存722,952

Logic Level Gate

20V

1.3A

198 mOhm @ 1A, 4.5V

1V @ 250µA

2.5nC @ 8V

-

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)