页 80 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AO8814#A	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 7.5A 8TSSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存6,400	Logic Level Gate	20V	-	16 mOhm @ 7.5A, 10V	1V @ 250µA	15.4nC @ 4.5V	1390pF @ 10V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI4972DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 10.8A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.8A, 7.2A Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V Power - Max: 3.1W, 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存488,184	Standard	30V	10.8A, 7.2A	14.5 mOhm @ 6A, 10V	3V @ 250µA	28nC @ 10V	1080pF @ 15V	3.1W, 2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NTHD3100CT1	ON Semiconductor	MOSFET N/P-CH 20V CHIPFET FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A, 3.2A Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	封装: 8-SMD, Flat Lead	库存5,312	Logic Level Gate	20V	2.9A, 3.2A	80 mOhm @ 2.9A, 4.5V	1.2V @ 250µA	2.3nC @ 4.5V	165pF @ 10V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
ZXMC3A17DN8TC	Diodes Incorporated	MOSFET N/P-CH 30V 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.1A, 3.4A Rds On (Max) @ Id, Vgs: 50 mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存364,428	Logic Level Gate	30V	4.1A, 3.4A	50 mOhm @ 7.8A, 10V	1V @ 250µA (Min)	12.2nC @ 10V	600pF @ 25V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
APTMC170AM30CT1AG	Microsemi Corporation	MOSFET 2N-CH 1700V 106A SP1 FET Type: 2 N Channel (Phase Leg) FET Feature: Standard Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 106A Rds On (Max) @ Id, Vgs: 30 mOhm @ 100A, 20V Vgs(th) (Max) @ Id: 2.3V @ 5mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 380nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6160pF @ 1000V Power - Max: 700W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	封装: SP1	库存5,616	Standard	1700V (1.7kV)	106A	30 mOhm @ 100A, 20V	2.3V @ 5mA (Typ)	380nC @ 20V	6160pF @ 1000V	700W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
APTM08TAM04PG	Microsemi Corporation	MOSFET 6N-CH 75V 120A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V Power - Max: 138W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	封装: SP6	库存3,440	Standard	75V	120A	4.5 mOhm @ 60A, 10V	4V @ 1mA	153nC @ 10V	4530pF @ 25V	138W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
APTM10DDAM09T3G	Microsemi Corporation	MOSFET 2N-CH 100V 139A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 139A Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	封装: SP3	库存5,296	Standard	100V	139A	10 mOhm @ 69.5A, 10V	4V @ 2.5mA	350nC @ 10V	9875pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
IRF3546MTRPBF	Infineon Technologies	MOSFET 4N-CH 25V 16A/20A 41PQFN FET Type: 4 N-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 16A (Tc), 20A (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 27A, 10V Vgs(th) (Max) @ Id: 2.1V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 13V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 41-PowerVFQFN Supplier Device Package: 41-PQFN (6x8)	封装: 41-PowerVFQFN	库存3,456	Logic Level Gate	25V	16A (Tc), 20A (Tc)	3.9 mOhm @ 27A, 10V	2.1V @ 35µA	15nC @ 4.5V	1310pF @ 13V	-	-40°C ~ 150°C (TJ)	Surface Mount	41-PowerVFQFN	41-PQFN (6x8)
NTMFD4C88NT3G	ON Semiconductor	MOSFET 2N-CH 30V 8DFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6)	封装: 8-PowerTDFN	库存3,712	Standard	30V	11.7A, 14.2A	5.4 mOhm @ 10A, 10V	2.2V @ 250µA	22.2nC @ 10V	1252pF @ 15V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6)
SI4834CDY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V Power - Max: 2.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存434,568	Standard	30V	8A	20 mOhm @ 8A, 10V	3V @ 1mA	25nC @ 10V	950pF @ 15V	2.9W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI7224DN-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 6A PPAK 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V Power - Max: 17.8W, 23W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	封装: PowerPAK? 1212-8 Dual	库存103,776	Logic Level Gate	30V	6A	35 mOhm @ 6.5A, 10V	2.2V @ 250µA	14.5nC @ 10V	570pF @ 15V	17.8W, 23W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
FDMA3027PZ	Fairchild/ON Semiconductor	MOSFET 2P-CH 30V 3.3A MICRO FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.3A Rds On (Max) @ Id, Vgs: 87 mOhm @ 3.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-MicroFET (2x2)	封装: 6-VDFN Exposed Pad	库存7,856	Logic Level Gate	30V	3.3A	87 mOhm @ 3.3A, 10V	3V @ 250µA	10nC @ 10V	435pF @ 15V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-MicroFET (2x2)
BSM180D12P3C007	Rohm Semiconductor	SIC POWER MODULE FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 5.6V @ 50mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Power - Max: 880W Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: Module Supplier Device Package: Module	封装: Module	库存4,144	Standard	1200V (1.2kV)	-	-	5.6V @ 50mA	-	900pF @ 10V	880W	175°C (TJ)	Surface Mount	Module	Module
IRFI4019H-117P	Infineon Technologies	MOSFET 2N-CH 150V 8.7A TO-220FP FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 8.7A Rds On (Max) @ Id, Vgs: 95 mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 4.9V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V Power - Max: 18W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Full Pack Supplier Device Package: TO-220-5 Full-Pak	封装: TO-220-5 Full Pack	库存5,920	Standard	150V	8.7A	95 mOhm @ 5.2A, 10V	4.9V @ 50µA	20nC @ 10V	810pF @ 25V	18W	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5 Full Pack	TO-220-5 Full-Pak
IRFH4253DTRPBF	Infineon Technologies	MOSFET 2N-CH 25V 64A/145A PQFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 64A, 145A Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.1V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V Power - Max: 31W, 50W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PQFN (5x6)	封装: 8-PowerVDFN	库存6,368	Logic Level Gate	25V	64A, 145A	3.2 mOhm @ 30A, 10V	2.1V @ 35µA	15nC @ 4.5V	1314pF @ 13V	31W, 50W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PQFN (5x6)
SI7913DN-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 5A 1212-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	封装: PowerPAK? 1212-8 Dual	库存49,020	Logic Level Gate	20V	5A	37 mOhm @ 7.4A, 4.5V	1V @ 250µA	24nC @ 4.5V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
US6K1TR	Rohm Semiconductor	MOSFET 2N-CH 30V 1.5A TUMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: TUMT6	封装: 6-SMD, Flat Leads	库存828,000	Logic Level Gate	30V	1.5A	240 mOhm @ 1.5A, 4.5V	1.5V @ 1mA	2.2nC @ 4.5V	80pF @ 10V	1W	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	TUMT6
DMN2050LFDB-13	Diodes Incorporated	MOSFET 2N-CH 20V 3.3A 6UDFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.3A Rds On (Max) @ Id, Vgs: 45 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V Power - Max: 730mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	封装: 6-UDFN Exposed Pad	库存6,064	Logic Level Gate	20V	3.3A	45 mOhm @ 5A, 4.5V	1V @ 250µA	12nC @ 10V	389pF @ 10V	730mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
SI7900AEDN-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 6A 1212-8 FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 26 mOhm @ 8.5A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	封装: PowerPAK? 1212-8 Dual	库存1,348,440	Logic Level Gate	20V	6A	26 mOhm @ 8.5A, 4.5V	900mV @ 250µA	16nC @ 4.5V	-	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
SI4904DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 40V 8A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V Power - Max: 3.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存25,590	Standard	40V	8A	16 mOhm @ 5A, 10V	2V @ 250µA	85nC @ 10V	2390pF @ 20V	3.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NVJD4152PT1G	onsemi	MOSFET 2P-CH 20V 0.88A SC88 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 880mA (Ta) Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V Power - Max: 272mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	封装: -	Request a Quote	-	20V	880mA (Ta)	260mOhm @ 880mA, 4.5V	1.2V @ 250µA	2.2nC @ 4.5V	155pF @ 20V	272mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
MSCSM70AM19T1AG	Microchip Technology	SIC 2N-CH 700V 124A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Power - Max: 365W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	700V	124A (Tc)	19mOhm @ 40A, 20V	2.4V @ 4mA	215nC @ 20V	4500pF @ 700V	365W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
TSM4925DCS	Taiwan Semiconductor Corporation	MOSFET 2P-CH 30V 7.1A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	Request a Quote	-	30V	7.1A (Ta)	25mOhm @ 7.1A, 10V	3V @ 250µA	70nC @ 10V	1900pF @ 15V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
UPA2387T1P-E4-A	Renesas Electronics Corporation	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MCQ4503A-TP	Micro Commercial Co	MOSFET 30V 6.5A/5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V, 60mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V, 9.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 15V, 520pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	Request a Quote	-	30V	6.5A (Ta), 5A (Ta)	30mOhm @ 5A, 10V, 60mOhm @ 4A, 10V	2.4V @ 250µA, 2.5V @ 250µA	5.2nC @ 10V, 9.2nC @ 10V	255pF @ 15V, 520pF @ 15V	2W	-55°C ~ 150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
FS30ASJ-06F-B00	Renesas Electronics Corporation	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
FW363-TL-E	onsemi	PCH+NCH 4V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMC3732UVTQ-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 700mA (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 0.95V @ 250µA, 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 1.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V, 54pF @ 15V Power - Max: 540mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封装: -	Request a Quote	-	30V	1.1A (Ta), 700mA (Ta)	460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V	0.95V @ 250µA, 1.1V @ 250µA	0.9nC @ 4.5V, 1.6nC @ 8V	40.8pF @ 25V, 54pF @ 15V	540mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
AOCA33103E	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 12V 40A 10DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 3.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Supplier Device Package: 10-AlphaDFN (2.52x2.52)	封装: -	库存23,265	-	12V	40A (Ta)	1.8mOhm @ 5A, 4.5V	1.3V @ 250µA	45nC @ 4.5V	-	3.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	10-SMD, No Lead	10-AlphaDFN (2.52x2.52)
GSFD06C20	Good-Ark Semiconductor	MOSFET N/P-CH 60V 19A TO252-4 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 19A (Tc), 17A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 30V, 1810pF @ 30V Power - Max: 20.1W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPAK (4 Leads + Tab), TO-252AD Supplier Device Package: TO-252-4	封装: -	库存13,599	-	60V	19A (Tc), 17A (Tc)	30mOhm @ 15A, 10V	2.5V @ 250µA	24nC @ 10V	1720pF @ 30V, 1810pF @ 30V	20.1W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-5, DPAK (4 Leads + Tab), TO-252AD	TO-252-4

AO8814#A

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 7.5A 8TSSOP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存6,400

Logic Level Gate

20V

-

16 mOhm @ 7.5A, 10V

1V @ 250µA

15.4nC @ 4.5V

1390pF @ 10V

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SI4972DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 10.8A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.8A, 7.2A
Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V
Power - Max: 3.1W, 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存488,184

Standard

30V

10.8A, 7.2A

14.5 mOhm @ 6A, 10V

3V @ 250µA

28nC @ 10V

1080pF @ 15V

3.1W, 2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NTHD3100CT1

ON Semiconductor

MOSFET N/P-CH 20V CHIPFET

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 3.2A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: ChipFET?

封装: 8-SMD, Flat Lead

库存5,312

Logic Level Gate

20V

2.9A, 3.2A

80 mOhm @ 2.9A, 4.5V

1.2V @ 250µA

2.3nC @ 4.5V

165pF @ 10V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

ChipFET?

ZXMC3A17DN8TC

Diodes Incorporated

MOSFET N/P-CH 30V 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.1A, 3.4A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存364,428

Logic Level Gate

30V

4.1A, 3.4A

50 mOhm @ 7.8A, 10V

1V @ 250µA (Min)

12.2nC @ 10V

600pF @ 25V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

APTMC170AM30CT1AG

Microsemi Corporation

MOSFET 2N-CH 1700V 106A SP1

FET Type: 2 N Channel (Phase Leg)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 106A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 100A, 20V
Vgs(th) (Max) @ Id: 2.3V @ 5mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 380nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6160pF @ 1000V
Power - Max: 700W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

封装: SP1

库存5,616

Standard

1700V (1.7kV)

106A

30 mOhm @ 100A, 20V

2.3V @ 5mA (Typ)

380nC @ 20V

6160pF @ 1000V

700W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

APTM08TAM04PG

Microsemi Corporation

MOSFET 6N-CH 75V 120A SP6-P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 60A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V
Power - Max: 138W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

封装: SP6

库存3,440

Standard

75V

120A

4.5 mOhm @ 60A, 10V

4V @ 1mA

153nC @ 10V

4530pF @ 25V

138W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

APTM10DDAM09T3G

Microsemi Corporation

MOSFET 2N-CH 100V 139A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

封装: SP3

库存5,296

Standard

100V

139A

10 mOhm @ 69.5A, 10V

4V @ 2.5mA

350nC @ 10V

9875pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

IRF3546MTRPBF

Infineon Technologies

MOSFET 4N-CH 25V 16A/20A 41PQFN

FET Type: 4 N-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc), 20A (Tc)
Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 27A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 13V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 41-PowerVFQFN
Supplier Device Package: 41-PQFN (6x8)

封装: 41-PowerVFQFN

库存3,456

Logic Level Gate

25V

16A (Tc), 20A (Tc)

3.9 mOhm @ 27A, 10V

2.1V @ 35µA

15nC @ 4.5V

1310pF @ 13V

-

-40°C ~ 150°C (TJ)

Surface Mount

41-PowerVFQFN

41-PQFN (6x8)

NTMFD4C88NT3G

ON Semiconductor

MOSFET 2N-CH 30V 8DFN

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A
Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6)

封装: 8-PowerTDFN

库存3,712

Standard

30V

11.7A, 14.2A

5.4 mOhm @ 10A, 10V

2.2V @ 250µA

22.2nC @ 10V

1252pF @ 15V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6)

SI4834CDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Power - Max: 2.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存434,568

Standard

30V

8A

20 mOhm @ 8A, 10V

3V @ 1mA

25nC @ 10V

950pF @ 15V

2.9W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI7224DN-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 6A PPAK 1212-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
Power - Max: 17.8W, 23W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

封装: PowerPAK? 1212-8 Dual

库存103,776

Logic Level Gate

30V

6A

35 mOhm @ 6.5A, 10V

2.2V @ 250µA

14.5nC @ 10V

570pF @ 15V

17.8W, 23W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

FDMA3027PZ

Fairchild/ON Semiconductor

MOSFET 2P-CH 30V 3.3A MICRO

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Rds On (Max) @ Id, Vgs: 87 mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-MicroFET (2x2)

封装: 6-VDFN Exposed Pad

库存7,856

Logic Level Gate

30V

3.3A

87 mOhm @ 3.3A, 10V

3V @ 250µA

10nC @ 10V

435pF @ 15V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

6-MicroFET (2x2)

BSM180D12P3C007

Rohm Semiconductor

SIC POWER MODULE

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 5.6V @ 50mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Power - Max: 880W
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Module
Supplier Device Package: Module

封装: Module

库存4,144

Standard

1200V (1.2kV)

-

5.6V @ 50mA

-

900pF @ 10V

880W

175°C (TJ)

Surface Mount

Module

IRFI4019H-117P

Infineon Technologies

MOSFET 2N-CH 150V 8.7A TO-220FP

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 8.7A
Rds On (Max) @ Id, Vgs: 95 mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
Power - Max: 18W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5 Full Pack
Supplier Device Package: TO-220-5 Full-Pak

封装: TO-220-5 Full Pack

库存5,920

Standard

150V

8.7A

95 mOhm @ 5.2A, 10V

4.9V @ 50µA

20nC @ 10V

810pF @ 25V

18W

-55°C ~ 150°C (TJ)

Through Hole

TO-220-5 Full Pack

TO-220-5 Full-Pak

IRFH4253DTRPBF

Infineon Technologies

MOSFET 2N-CH 25V 64A/145A PQFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 64A, 145A
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Power - Max: 31W, 50W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PQFN (5x6)

封装: 8-PowerVDFN

库存6,368

Logic Level Gate

25V

64A, 145A

3.2 mOhm @ 30A, 10V

2.1V @ 35µA

15nC @ 4.5V

1314pF @ 13V

31W, 50W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PQFN (5x6)

SI7913DN-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 5A 1212-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

封装: PowerPAK? 1212-8 Dual

库存49,020

Logic Level Gate

20V

5A

37 mOhm @ 7.4A, 4.5V

1V @ 250µA

24nC @ 4.5V

-

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

US6K1TR

Rohm Semiconductor

MOSFET 2N-CH 30V 1.5A TUMT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: TUMT6

封装: 6-SMD, Flat Leads

库存828,000

Logic Level Gate

30V

1.5A

240 mOhm @ 1.5A, 4.5V

1.5V @ 1mA

2.2nC @ 4.5V

80pF @ 10V

1W

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

TUMT6

DMN2050LFDB-13

Diodes Incorporated

MOSFET 2N-CH 20V 3.3A 6UDFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V
Power - Max: 730mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

封装: 6-UDFN Exposed Pad

库存6,064

Logic Level Gate

20V

3.3A

45 mOhm @ 5A, 4.5V

1V @ 250µA

12nC @ 10V

389pF @ 10V

730mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

SI7900AEDN-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 6A 1212-8

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 26 mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

封装: PowerPAK? 1212-8 Dual

库存1,348,440

Logic Level Gate

20V

6A

26 mOhm @ 8.5A, 4.5V

900mV @ 250µA

16nC @ 4.5V

-

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

SI4904DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 40V 8A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
Power - Max: 3.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存25,590

Standard

40V

8A

16 mOhm @ 5A, 10V

2V @ 250µA

85nC @ 10V

2390pF @ 20V

3.25W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NVJD4152PT1G

onsemi

MOSFET 2P-CH 20V 0.88A SC88

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 880mA (Ta)
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V
Power - Max: 272mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

封装: -

Request a Quote

-

20V

880mA (Ta)

260mOhm @ 880mA, 4.5V

1.2V @ 250µA

2.2nC @ 4.5V

155pF @ 20V

272mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

MSCSM70AM19T1AG

Microchip Technology

SIC 2N-CH 700V 124A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Power - Max: 365W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

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-

700V

124A (Tc)

19mOhm @ 40A, 20V

2.4V @ 4mA

215nC @ 20V

4500pF @ 700V

365W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

TSM4925DCS

Taiwan Semiconductor Corporation

MOSFET 2P-CH 30V 7.1A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V
Power - Max: 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

Request a Quote

-

30V

7.1A (Ta)

25mOhm @ 7.1A, 10V

3V @ 250µA

70nC @ 10V

1900pF @ 15V

2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

UPA2387T1P-E4-A

Renesas Electronics Corporation

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

MCQ4503A-TP

Micro Commercial Co

MOSFET 30V 6.5A/5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V, 60mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V, 9.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 15V, 520pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

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-

30V

6.5A (Ta), 5A (Ta)

30mOhm @ 5A, 10V, 60mOhm @ 4A, 10V

2.4V @ 250µA, 2.5V @ 250µA

5.2nC @ 10V, 9.2nC @ 10V

255pF @ 15V, 520pF @ 15V

2W

-55°C ~ 150°C

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

FS30ASJ-06F-B00

Renesas Electronics Corporation

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

FW363-TL-E

onsemi

PCH+NCH 4V DRIVE SERIES

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

DMC3732UVTQ-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 700mA (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 0.95V @ 250µA, 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 1.6nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V, 54pF @ 15V
Power - Max: 540mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封装: -

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-

30V

1.1A (Ta), 700mA (Ta)

460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V

0.95V @ 250µA, 1.1V @ 250µA

0.9nC @ 4.5V, 1.6nC @ 8V

40.8pF @ 25V, 54pF @ 15V

540mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

AOCA33103E

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 12V 40A 10DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 3.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Supplier Device Package: 10-AlphaDFN (2.52x2.52)

封装: -

库存23,265

-

12V

40A (Ta)

1.8mOhm @ 5A, 4.5V

1.3V @ 250µA

45nC @ 4.5V

-

3.1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

10-SMD, No Lead

10-AlphaDFN (2.52x2.52)

GSFD06C20

Good-Ark Semiconductor

MOSFET N/P-CH 60V 19A TO252-4

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc), 17A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 30V, 1810pF @ 30V
Power - Max: 20.1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPAK (4 Leads + Tab), TO-252AD
Supplier Device Package: TO-252-4

封装: -

库存13,599

-

60V

19A (Tc), 17A (Tc)

30mOhm @ 15A, 10V

2.5V @ 250µA

24nC @ 10V

1720pF @ 30V, 1810pF @ 30V

20.1W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-5, DPAK (4 Leads + Tab), TO-252AD

TO-252-4