页 1103 - 晶体管 - FET，MOSFET - 单 | 分立半导体产品

IRFR024NTRRPBF

Infineon Technologies

MOSFET N-CH 55V 17A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 75 mOhm @ 10A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存3,184

MOSFET (Metal Oxide)

55V

17A (Tc)

10V

4V @ 250µA

20nC @ 10V

370pF @ 25V

±20V

-

45W (Tc)

75 mOhm @ 10A, 10V

-

Surface Mount

D-Pak

TO-252-3, DPak (2 Leads + Tab), SC-63

BSP372L6327HTSA1

Infineon Technologies

MOSFET N-CH 100V 1.7A SOT-223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Vgs (Max): ±14V
FET Feature: -
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 310 mOhm @ 1.7A, 5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223-4
Package / Case: TO-261-4, TO-261AA

封装: TO-261-4, TO-261AA

库存4,448

MOSFET (Metal Oxide)

100V

1.7A (Ta)

5V

2V @ 1mA

-

520pF @ 25V

±14V

-

1.8W (Ta)

310 mOhm @ 1.7A, 5V

-55°C ~ 150°C (TJ)

Surface Mount

PG-SOT223-4

TO-261-4, TO-261AA

GP1M018A020HG

Global Power Technologies Group

MOSFET N-CH 200V 18A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 170 mOhm @ 9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

封装: TO-220-3

库存6,544

MOSFET (Metal Oxide)

200V

18A (Tc)

10V

5V @ 250µA

18nC @ 10V

950pF @ 25V

±30V

-

94W (Tc)

170 mOhm @ 9A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220

TO-220-3

BFL4001

ON Semiconductor

MOSFET N-CH 900V 4.1A TO-220FI

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 2W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 3.25A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FI(LS)
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存4,720

MOSFET (Metal Oxide)

900V

4.1A (Ta)

10V

-

44nC @ 10V

850pF @ 30V

±30V

-

2W (Ta), 37W (Tc)

2.7 Ohm @ 3.25A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220FI(LS)

TO-220-3 Full Pack

NTLUF4189NZTBG

ON Semiconductor

MOSFET N-CH 30V 1.2A 6UDFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 15V
Vgs (Max): ±8V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.5A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-UDFN (1.6x1.6)
Package / Case: 6-UFDFN Exposed Pad

封装: 6-UFDFN Exposed Pad

库存5,232

MOSFET (Metal Oxide)

30V

1.2A (Ta)

2.5V, 4.5V

1.5V @ 250µA

3nC @ 4.5V

95pF @ 15V

±8V

Schottky Diode (Isolated)

500mW (Ta)

200 mOhm @ 1.5A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN (1.6x1.6)

6-UFDFN Exposed Pad

SI3433BDV-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 4.3A 6-TSOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.6A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

库存1,114,692

MOSFET (Metal Oxide)

20V

4.3A (Ta)

1.8V, 4.5V

850mV @ 250µA

18nC @ 4.5V

-

±8V

-

1.1W (Ta)

42 mOhm @ 5.6A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

6-TSOP

SOT-23-6 Thin, TSOT-23-6

2SK3484-AZ

Renesas Electronics America

MOSFET N-CH 100V MP-3/TO-251

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 125 mOhm @ 8A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251 (MP-3)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封装: TO-251-3 Short Leads, IPak, TO-251AA

库存27,264

MOSFET (Metal Oxide)

100V

16A (Tc)

4.5V, 10V

-

20nC @ 10V

900pF @ 10V

±20V

-

1W (Ta), 30W (Tc)

125 mOhm @ 8A, 10V

150°C (TJ)

Through Hole

TO-251 (MP-3)

TO-251-3 Short Leads, IPak, TO-251AA

ZVN0545ASTZ

Diodes Incorporated

MOSFET N-CH 450V 0.09A TO92-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 90mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 50 Ohm @ 100mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: E-Line (TO-92 compatible)
Package / Case: E-Line-3

封装: E-Line-3

库存239,400

MOSFET (Metal Oxide)

450V

90mA (Ta)

10V

3V @ 1mA

-

70pF @ 25V

±20V

-

700mW (Ta)

50 Ohm @ 100mA, 10V

-55°C ~ 150°C (TJ)

Through Hole

E-Line (TO-92 compatible)

E-Line-3

AON6404A

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 25A DFN5X6

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5210pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.3W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6)
Package / Case: 8-PowerSMD, Flat Leads

封装: 8-PowerSMD, Flat Leads

库存7,472

MOSFET (Metal Oxide)

30V

25A (Ta), 85A (Tc)

4.5V, 10V

2V @ 250µA

40nC @ 10V

5210pF @ 15V

±20V

-

2.3W (Ta), 83W (Tc)

2.3 mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-DFN (5x6)

8-PowerSMD, Flat Leads

NTDV20P06LT4G-VF01

ON Semiconductor

MOSFET P-CH 60V 15.5A DPAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 7.5A, 5V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存4,992

MOSFET (Metal Oxide)

60V

15.5A (Ta)

10V

2V @ 250µA

26nC @ 5V

1190pF @ 25V

±20V

-

65W (Tc)

150 mOhm @ 7.5A, 5V

-55°C ~ 175°C (TJ)

Surface Mount

DPAK-3

TO-252-3, DPak (2 Leads + Tab), SC-63

SI4413ADY-T1-E3

Vishay Siliconix

MOSFET P-CH 30V 10.5A 8-SOIC

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 13A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

库存1,009,056

MOSFET (Metal Oxide)

30V

10.5A (Ta)

4.5V, 10V

3V @ 250µA

95nC @ 5V

-

±20V

-

1.5W (Ta)

7.5 mOhm @ 13A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

IRFBC30PBF

Vishay Siliconix

MOSFET N-CH 600V 3.6A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存81,012

MOSFET (Metal Oxide)

600V

3.6A (Tc)

10V

4V @ 250µA

31nC @ 10V

660pF @ 25V

±20V

-

74W (Tc)

2.2 Ohm @ 2.2A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220AB

TO-220-3

NDF10N60ZG

ON Semiconductor

MOSFET N-CH 600V 10A TO-220FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1645pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FP
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存16,464

MOSFET (Metal Oxide)

600V

10A (Tc)

10V

4.5V @ 100µA

68nC @ 10V

1645pF @ 25V

±30V

-

39W (Tc)

750 mOhm @ 5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220FP

TO-220-3 Full Pack

IRFBE20PBF

Vishay Siliconix

MOSFET N-CH 800V 1.8A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 54W (Tc)
Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 1.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存4,976

MOSFET (Metal Oxide)

800V

1.8A (Tc)

10V

4V @ 250µA

38nC @ 10V

530pF @ 25V

±20V

-

54W (Tc)

6.5 Ohm @ 1.1A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220AB

TO-220-3

STP18NM60ND

STMicroelectronics

MOSFET N-CH 600V 13A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 50V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

封装: TO-220-3

库存7,656

MOSFET (Metal Oxide)

600V

13A (Tc)

10V

5V @ 250µA

34nC @ 10V

1030pF @ 50V

±25V

-

110W (Tc)

290 mOhm @ 6.5A, 10V

150°C (TJ)

Through Hole

TO-220

TO-220-3

IRF3709SPBF

Infineon Technologies

MOSFET N-CH 30V 90A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2672pF @ 16V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存15,576

MOSFET (Metal Oxide)

30V

90A (Tc)

4.5V, 10V

3V @ 250µA

41nC @ 5V

2672pF @ 16V

±20V

-

3.1W (Ta), 120W (Tc)

9 mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPA90R500C3

Infineon Technologies

MOSFET N-CH 900V 11A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 740µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存13,584

MOSFET (Metal Oxide)

900V

11A (Tc)

10V

3.5V @ 740µA

68nC @ 10V

1700pF @ 100V

±20V

-

34W (Tc)

500 mOhm @ 6.6A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

FQPF27P06

Fairchild/ON Semiconductor

MOSFET P-CH 60V 17A TO-220F

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 70 mOhm @ 8.5A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存104,100

MOSFET (Metal Oxide)

60V

17A (Tc)

10V

4V @ 250µA

43nC @ 10V

1400pF @ 25V

±25V

-

47W (Tc)

70 mOhm @ 8.5A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220F

TO-220-3 Full Pack

SI7850DP-T1-E3

Vishay Siliconix

MOSFET N-CH 60V 6.2A PPAK SO-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 22 mOhm @ 10.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SO-8
Package / Case: PowerPAK? SO-8

封装: PowerPAK? SO-8

库存131,568

MOSFET (Metal Oxide)

60V

6.2A (Ta)

4.5V, 10V

3V @ 250µA

27nC @ 10V

-

±20V

-

1.8W (Ta)

22 mOhm @ 10.3A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8

RJK005N03FRAT146

Rohm Semiconductor

MOSFET N-CH 30V 500MA SMT3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 580mOhm @ 500mA, 4.5V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SMT3
Package / Case: TO-236-3, SC-59, SOT-23-3

封装: -

库存15,255

MOSFET (Metal Oxide)

30 V

500mA (Ta)

2.5V, 4.5V

1.5V @ 1mA

4 nC @ 4 V

60 pF @ 10 V

±12V

-

200mW (Ta)

580mOhm @ 500mA, 4.5V

150°C (TJ)

Surface Mount

SMT3

TO-236-3, SC-59, SOT-23-3

2SJ633-TL-E

onsemi

PCH 4V DRIVE SERIES

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

MGSF3455VT1

onsemi

P-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

SPD08N50C3BTMA1

Infineon Technologies

MOSFET N-CH 560V 7.6A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 560 V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-11
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

Request a Quote

MOSFET (Metal Oxide)

560 V

7.6A (Tc)

10V

3.9V @ 350µA

32 nC @ 10 V

750 pF @ 25 V

±20V

-

83W (Tc)

600mOhm @ 4.6A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3-11

TO-252-3, DPAK (2 Leads + Tab), SC-63

A2N7002HW-HF

Comchip Technology

MOSFET N-CH 60V 300MA SOT323

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250mW (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323

封装: -

Request a Quote

MOSFET (Metal Oxide)

60 V

300mA (Ta)

-

2.5V @ 250µA

-

41 pF @ 20 V

±20V

-

250mW (Ta)

2.5Ohm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-323

SC-70, SOT-323

SIHB22N60ET5-GE3

Vishay Siliconix

MOSFET N-CH 600V 21A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

Request a Quote

MOSFET (Metal Oxide)

600 V

21A (Tc)

10V

4V @ 250µA

86 nC @ 10 V

1920 pF @ 100 V

±30V

-

227W (Tc)

180mOhm @ 11A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

630AT

Goford Semiconductor

N200V,RD(MAX)<250M@10V,RD(MAX)<3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

封装: -

库存261

MOSFET (Metal Oxide)

200 V

9A (Tc)

4.5V, 10V

2.2V @ 250µA

11.8 nC @ 10 V

509 pF @ 25 V

±20V

-

83W (Tc)

250mOhm @ 1A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220

TO-220-3

AON7406L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 8DFN

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

COM-17193

SparkFun Electronics

NTNS0K8N021Z SMALL SIGNAL MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-