图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 100V 59A TO-220AB
|
封装: TO-220-3 |
库存2,608 |
|
MOSFET (Metal Oxide) | 100V | 59A (Tc) | 10V | 4V @ 250mA | 120nC @ 10V | 2900pF @ 25V | ±20V | - | 160W (Tc) | 18 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 17A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,800 |
|
MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 4V @ 250µA | 20nC @ 10V | 370pF @ 25V | ±20V | - | 45W (Tc) | 75 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 55V 75A TO-220AB
|
封装: TO-220-3 |
库存3,504 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 3650pF @ 25V | ±20V | - | 330W (Tc) | 8 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Microsemi Corporation |
MOSFET N-CH 600V 18A TO247AD
|
封装: TO-247-3 |
库存5,600 |
|
MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 4V @ 1mA | 130nC @ 10V | 2950pF @ 25V | ±30V | - | 310W (Tc) | 400 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
||
Vishay Siliconix |
MOSFET N-CH 12V 13A PPAK SO-8
|
封装: PowerPAK? SO-8 |
库存458,316 |
|
MOSFET (Metal Oxide) | 12V | 13A (Ta) | 2.5V, 4.5V | 1.4V @ 250µA | 30nC @ 4.5V | - | ±8V | - | 1.9W (Ta) | 5.5 mOhm @ 17A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Vishay Siliconix |
MOSFET P-CH 12V 9.9A PPAK 1212-8
|
封装: PowerPAK? 1212-8 |
库存7,168 |
|
MOSFET (Metal Oxide) | 12V | 9.9A (Ta) | 1.8V, 4.5V | 1V @ 400µA | 59nC @ 4.5V | - | ±8V | - | 1.5W (Ta) | 12 mOhm @ 15.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
ON Semiconductor |
MOSFET N-CH 200V 0.25A TO-92
|
封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
库存537,288 |
|
MOSFET (Metal Oxide) | 200V | 250mA (Ta) | 10V | 3V @ 1mA | - | 60pF @ 25V | ±20V | - | 350mW (Ta) | 6.4 Ohm @ 250mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 5A TO-220F
|
封装: TO-220-3 Full Pack |
库存107,100 |
|
MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 4V @ 250µA | 24nC @ 10V | 625pF @ 25V | ±30V | - | 38W (Tc) | 1.4 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
IXYS |
MOSFET N-CH 75V 230A
|
封装: TO-220-3 |
库存2,288 |
|
MOSFET (Metal Oxide) | 75V | 230A (Tc) | 10V | 4V @ 1mA | 178nC @ 10V | 10500pF @ 25V | - | - | 480W (Tc) | 4.2 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 150V 30A PPAK SO-8
|
封装: PowerPAK? SO-8 |
库存111,108 |
|
MOSFET (Metal Oxide) | 150V | 30A (Tc) | 10V | 4V @ 250µA | 53nC @ 10V | 2100pF @ 75V | ±20V | - | 5.4W (Ta), 96W (Tc) | 38 mOhm @ 7.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存12,312 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 180nC @ 10V | 4780pF @ 25V | ±20V | - | 230W (Tc) | 4.9 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 3.9A TO-220F
|
封装: TO-220-3 Full Pack |
库存27,240 |
|
MOSFET (Metal Oxide) | 500V | 3.9A (Tc) | 10V | 5V @ 250µA | 12nC @ 10V | 485pF @ 25V | ±25V | - | 30W (Tc) | 2 Ohm @ 1.95A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 55V 85A TO-220AB
|
封装: TO-220-3 |
库存18,084 |
|
MOSFET (Metal Oxide) | 55V | 85A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 3210pF @ 25V | ±20V | - | 180W (Tc) | 11 mOhm @ 43A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
STMicroelectronics |
MOSFET N-CH 600V 1.4A IPAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存171,108 |
|
MOSFET (Metal Oxide) | 600V | 1.4A (Tc) | 10V | 4.5V @ 50µA | 10nC @ 10V | 170pF @ 25V | ±30V | - | 45W (Tc) | 8 Ohm @ 700mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Nexperia USA Inc. |
MOSFET N-CH 80V 74A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存35,424 |
|
MOSFET (Metal Oxide) | 80V | 74A (Tc) | 10V | 4V @ 1mA | 43nC @ 10V | 2782pF @ 12V | ±20V | - | 148W (Tc) | 11 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.15A CST3C
|
封装: SC-101, SOT-883 |
库存93,378 |
|
MOSFET (Metal Oxide) | 60V | 150mA (Ta) | 4.5V, 10V | 2.1V @ 250µA | 0.35nC @ 4.5V | 17pF @ 10V | ±20V | - | 500mW (Ta) | 3.9 Ohm @ 100mA, 10V | 150°C (TJ) | Surface Mount | CST3C | SC-101, SOT-883 |
||
Infineon Technologies |
MOSFET N-CH 55V 21A TO220FP
|
封装: TO-220-3 Full Pack |
库存99,372 |
|
MOSFET (Metal Oxide) | 55V | 21A (Tc) | 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | ±20V | - | 37W (Tc) | 40 mOhm @ 11A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 80V 80A TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存390,000 |
|
MOSFET (Metal Oxide) | 80V | 80A (Tc) | 6V, 10V | 3.5V @ 90µA | 69nC @ 10V | 4750pF @ 40V | ±20V | - | 150W (Tc) | 5.4 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 1000V 1.4A TO-220AB
|
封装: TO-220-3 |
库存3,584 |
|
MOSFET (Metal Oxide) | 1000V | 1.4A (Tc) | 10V | 4V @ 250µA | 38nC @ 10V | 500pF @ 25V | ±20V | - | 54W (Tc) | 11 Ohm @ 840mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Diodes Incorporated |
MOSFET N-CH 60V SOT223
|
封装: TO-261-4, TO-261AA |
库存185,484 |
|
MOSFET (Metal Oxide) | 60V | 4.8A (Ta) | 4.5V, 10V | 1V @ 250µA | 20.4nC @ 10V | 1063pF @ 30V | ±20V | - | 2W (Ta) | 50 mOhm @ 3.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Diodes Incorporated |
DIODE GP SOT23
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 30mA (Ta) | 0V, 10V | 1.4V @ 8µA | 2 nC @ 5 V | 30.9 pF @ 25 V | ±20V | Depletion Mode | 1W (Ta) | 500Ohm @ 16mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 40V 100A 5X6 PQFN
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 29A (Ta), 100A (Tc) | - | 2.5V @ 150µA | 82 nC @ 10 V | 4730 pF @ 25 V | - | - | - | 2.4mOhm @ 50A, 10V | - | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Goford Semiconductor |
N650V,RD(MAX)<360M@10V,VTH2.5V~4
|
封装: - |
库存2,325 |
|
MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 4V @ 250µA | 21 nC @ 10 V | 768 pF @ 50 V | ±30V | - | 78W (Tc) | 360mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 16A 8SOIC
|
封装: - |
库存19,092 |
|
MOSFET (Metal Oxide) | 30 V | 16A (Ta) | 4.5V, 10V | 2.4V @ 250µA | 60 nC @ 10 V | 2270 pF @ 15 V | ±20V | - | 3.1W (Ta) | 5.5mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
onsemi |
MOSFET N-CH 250V 8.1A TO220-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 250 V | 8.1A (Tc) | 10V | 4V @ 250µA | 38 nC @ 10 V | 1000 pF @ 25 V | ±30V | - | 74W (Tc) | 450mOhm @ 4.05A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 60V 100A TSON-8
|
封装: - |
库存15,000 |
|
MOSFET (Metal Oxide) | 60 V | 36A (Ta), 306A (Tc) | 6V, 10V | 3.3V @ 147µA | 143 nC @ 10 V | 11000 pF @ 30 V | ±20V | - | 214W (Tc) | 1.2mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSON-8-3 | 8-PowerTDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 100MA CST3
|
封装: - |
库存106,068 |
|
MOSFET (Metal Oxide) | 20 V | 100mA (Ta) | 1.5V, 4V | 1.1V @ 100µA | - | 9.3 pF @ 3 V | ±10V | - | 100mW (Ta) | 3Ohm @ 10mA, 4V | 150°C | Surface Mount | CST3 | SC-101, SOT-883 |