页 102 - 晶体管 - UGBT，MOSFET - 单 | 分立半导体产品

图片	零件编号	制造商	描述	封装	库存	数量	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
	IKW50N65F5AXKSA1	Infineon Technologies	IGBT 650V 80A 305W PG-TO247-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Power - Max: 270W Switching Energy: 490µJ (on), 140µJ (off) Input Type: Standard Gate Charge: 108nC Td (on/off) @ 25°C: 21ns/156ns Test Condition: 400V, 25A, 12 Ohm, 15V Reverse Recovery Time (trr): 77ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	封装: TO-247-3	库存3,600		650V	80A	150A	2.1V @ 15V, 50A	270W	490µJ (on), 140µJ (off)	Standard	108nC	21ns/156ns	400V, 25A, 12 Ohm, 15V	77ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
	IRGR3B60KD2TRP	Infineon Technologies	IGBT 600V 7.8A 52W DPAK IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 7.8A Current - Collector Pulsed (Icm): 15.6A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A Power - Max: 52W Switching Energy: 62µJ (on), 39µJ (off) Input Type: Standard Gate Charge: 13nC Td (on/off) @ 25°C: 18ns/110ns Test Condition: 400V, 3A, 100 Ohm, 15V Reverse Recovery Time (trr): 77ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存2,208		600V	7.8A	15.6A	2.4V @ 15V, 3A	52W	62µJ (on), 39µJ (off)	Standard	13nC	18ns/110ns	400V, 3A, 100 Ohm, 15V	77ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak