页 62 - 晶体管 - UGBT,MOSFET - 单 | 分立半导体产品 | 黑森尔电子
联系我们
SalesDept@heisener.com 86-755-83210559-827
Language Translation

* Please refer to the English Version as our Official Version.

晶体管 - UGBT,MOSFET - 单

记录 4,424
页  62/158
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG7PK42UD1-EPBF
Infineon Technologies

IGBT 1200V ULTRA FAST TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存3,696
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IHY20N120R3XKSA1
Infineon Technologies

IGBT 1200V 40A 310W TO247HC-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
  • Power - Max: 310W
  • Switching Energy: 950µJ (off)
  • Input Type: Standard
  • Gate Charge: 211nC
  • Td (on/off) @ 25°C: -/387ns
  • Test Condition: 600V, 20A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: PG-TO247HC-3
封装: TO-247-3 Variant
库存3,504
1200V
40A
60A
1.7V @ 15V, 20A
310W
950µJ (off)
Standard
211nC
-/387ns
600V, 20A, 15 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
PG-TO247HC-3
hot IRG4IBC20W
Infineon Technologies

IGBT 600V 11.8A 34W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 11.8A
  • Current - Collector Pulsed (Icm): 52A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
  • Power - Max: 34W
  • Switching Energy: 60µJ (on), 80µJ (off)
  • Input Type: Standard
  • Gate Charge: 26nC
  • Td (on/off) @ 25°C: 22ns/110ns
  • Test Condition: 480V, 6.5A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
封装: TO-220-3 Full Pack
库存134,724
600V
11.8A
52A
2.6V @ 15V, 6.5A
34W
60µJ (on), 80µJ (off)
Standard
26nC
22ns/110ns
480V, 6.5A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
RJH1CF5RDPQ-80#T2
Renesas Electronics America

IGBT 1200V 50A 192.3W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
  • Power - Max: 192.3W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存2,880
1200V
50A
-
2.4V @ 15V, 25A
192.3W
-
Standard
-
-
-
-
150°C (TJ)
Through Hole
TO-247-3
TO-247
IXGP30N60B4D1
IXYS

IGBT 600V 56A 190W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 56A
  • Current - Collector Pulsed (Icm): 156A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 24A
  • Power - Max: 190W
  • Switching Energy: 440µJ (on), 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 77nC
  • Td (on/off) @ 25°C: 21ns/200ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 30ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存5,120
600V
56A
156A
1.7V @ 15V, 24A
190W
440µJ (on), 700µJ (off)
Standard
77nC
21ns/200ns
400V, 24A, 10 Ohm, 15V
30ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXGH40N60A
IXYS

IGBT 600V 75A 250W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
  • Power - Max: 250W
  • Switching Energy: 3mJ (off)
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: 100ns/600ns
  • Test Condition: 480V, 40A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存2,400
600V
75A
150A
3V @ 15V, 40A
250W
3mJ (off)
Standard
200nC
100ns/600ns
480V, 40A, 22 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
FGP5N60UFDTU
Fairchild/ON Semiconductor

IGBT 600V 10A 81W TO220

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 15A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 5A
  • Power - Max: 81W
  • Switching Energy: 75µJ (on), 59µJ (off)
  • Input Type: Standard
  • Gate Charge: 19.5nC
  • Td (on/off) @ 25°C: 6ns/44ns
  • Test Condition: 400V, 5A, 20 Ohm, 15V
  • Reverse Recovery Time (trr): 30ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
封装: TO-220-3
库存2,592
600V
10A
15A
2.4V @ 15V, 5A
81W
75µJ (on), 59µJ (off)
Standard
19.5nC
6ns/44ns
400V, 5A, 20 Ohm, 15V
30ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
IXGK120N60C2
IXYS

IGBT 600V 75A 830W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 500A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
  • Power - Max: 830W
  • Switching Energy: 1.7mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 370nC
  • Td (on/off) @ 25°C: 40ns/120ns
  • Test Condition: 400V, 80A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
封装: TO-264-3, TO-264AA
库存3,552
600V
75A
500A
2.5V @ 15V, 100A
830W
1.7mJ (on), 1mJ (off)
Standard
370nC
40ns/120ns
400V, 80A, 1 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXGK)
IXGC16N60B2
IXYS

IGBT 600V 28A 63W ISOPLUS220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 12A
  • Power - Max: 63W
  • Switching Energy: 150mJ (off)
  • Input Type: Standard
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: 25ns/70ns
  • Test Condition: 400V, 12A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS220?
  • Supplier Device Package: ISOPLUS220?
封装: ISOPLUS220?
库存2,784
600V
28A
100A
2.3V @ 15V, 12A
63W
150mJ (off)
Standard
32nC
25ns/70ns
400V, 12A, 22 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS220?
ISOPLUS220?
IXSP20N60B2D1
IXYS

IGBT 600V 35A 190W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 35A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
  • Power - Max: 190W
  • Switching Energy: 380µJ (off)
  • Input Type: Standard
  • Gate Charge: 33nC
  • Td (on/off) @ 25°C: 30ns/116ns
  • Test Condition: 480V, 16A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 30ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存2,816
600V
35A
60A
2.5V @ 15V, 16A
190W
380µJ (off)
Standard
33nC
30ns/116ns
480V, 16A, 10 Ohm, 15V
30ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IKA15N65ET6XKSA1
Infineon Technologies

IGBT 650V 15A TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存2,288
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXXH150N60C3
IXYS

IGBT 600V TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 300A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
  • Power - Max: 1360W
  • Switching Energy: 3.4mJ (on), 1.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: 34ns/120ns
  • Test Condition: 400V, 75A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封装: TO-247-3
库存6,208
600V
300A
150A
2.5V @ 15V, 150A
1360W
3.4mJ (on), 1.8mJ (off)
Standard
200nC
34ns/120ns
400V, 75A, 2 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
NGTD30T120F2WP
ON Semiconductor

IGBT TRENCH FIELD STOP 1200V DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: Die
库存3,552
1200V
-
200A
2.4V @ 15V, 40A
-
-
Standard
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
Die
Die
NGTD28T65F2SWK
ON Semiconductor

IGBT TRENCH FIELD STOP 650V DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: Die
库存6,352
650V
-
200A
2V @ 15V, 75A
-
-
Standard
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
Die
Die
IXGP12N100
IXYS

IGBT 1000V 24A 100W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): 48A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 2.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 65nC
  • Td (on/off) @ 25°C: 100ns/850ns
  • Test Condition: 800V, 12A, 120 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存6,336
1000V
24A
48A
3.5V @ 15V, 12A
100W
2.5mJ (off)
Standard
65nC
100ns/850ns
800V, 12A, 120 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot STGW60H65F
STMicroelectronics

IGBT 650V 120A 360W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
  • Power - Max: 360W
  • Switching Energy: 750µJ (on), 1.05mJ (off)
  • Input Type: Standard
  • Gate Charge: 217nC
  • Td (on/off) @ 25°C: 65ns/180ns
  • Test Condition: 400V, 60A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存6,624
650V
120A
240A
1.9V @ 15V, 60A
360W
750µJ (on), 1.05mJ (off)
Standard
217nC
65ns/180ns
400V, 60A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
NGTB40N120SWG
ON Semiconductor

IGBT 40A 1200V TO-247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 535W
  • Switching Energy: 3.4mJ (on), 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 313nC
  • Td (on/off) @ 25°C: 116ns/286ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 240ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: TO-247-3
库存7,888
1200V
80A
200A
2.4V @ 15V, 40A
535W
3.4mJ (on), 1.1mJ (off)
Standard
313nC
116ns/286ns
600V, 40A, 10 Ohm, 15V
240ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
RGT30NL65DGTL
Rohm Semiconductor

IGBT TRENCH FIELD 650V 30A LPDS

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 133 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 32 nC
  • Td (on/off) @ 25°C: 18ns/64ns
  • Test Condition: 400V, 15A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 55 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPDS
封装: -
Request a Quote
650 V
30 A
45 A
2.1V @ 15V, 15A
133 W
-
Standard
32 nC
18ns/64ns
400V, 15A, 10Ohm, 15V
55 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
LPDS
SIGC156T60NR2CX1SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 200 A
  • Current - Collector Pulsed (Icm): 600 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 180ns/285ns
  • Test Condition: 300V, 200A, 1.5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
200 A
600 A
2.5V @ 15V, 200A
-
-
Standard
-
180ns/285ns
300V, 200A, 1.5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC57T120R3LEX1SA3
Infineon Technologies

IGBT 1200V 50A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
1200 V
-
150 A
2.1V @ 15V, 50A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
RJP3045DPP-B1-T2F
Renesas Electronics Corporation

HIGH SPEED IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IGTM10N40A
Harris Corporation

N CHANNEL IGBT FOR SWITCHING APP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA
  • Supplier Device Package: TO-3
封装: -
Request a Quote
400 V
10 A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-204AA
TO-3
HGTG27N60C3DR
Harris Corporation

UFS SERIES N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 54 A
  • Current - Collector Pulsed (Icm): 108 A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 27A
  • Power - Max: 208 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 212 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: -
Request a Quote
600 V
54 A
108 A
2.2V @ 15V, 27A
208 W
-
Standard
212 nC
-
-
-
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IKW75N65ET7XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
  • Power - Max: 333 W
  • Switching Energy: 2.17mJ (on), 1.23mJ (off)
  • Input Type: Standard
  • Gate Charge: 435 nC
  • Td (on/off) @ 25°C: 28ns/310ns
  • Test Condition: 400V, 75A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 100 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封装: -
库存1,362
650 V
80 A
225 A
1.65V @ 15V, 75A
333 W
2.17mJ (on), 1.23mJ (off)
Standard
435 nC
28ns/310ns
400V, 75A, 4.7Ohm, 15V
100 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
SIGC25T60SNCX1SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 44ns/324ns
  • Test Condition: 400V, 30A, 11Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
30 A
90 A
2.5V @ 15V, 30A
-
-
Standard
-
44ns/324ns
400V, 30A, 11Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
AOT10B60M1
Alpha & Omega Semiconductor Inc.

IGBT 10A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 25 A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 10A
  • Power - Max: 83 W
  • Switching Energy: 190µJ (on), 140µJ (off)
  • Input Type: Standard
  • Gate Charge: 14 nC
  • Td (on/off) @ 25°C: 5.5ns/61ns
  • Test Condition: 400V, 10A, 30Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封装: -
Request a Quote
600 V
20 A
25 A
2.9V @ 15V, 10A
83 W
190µJ (on), 140µJ (off)
Standard
14 nC
5.5ns/61ns
400V, 10A, 30Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
SIGC28T60EX1SA4
Infineon Technologies

IGBT TRENCH FS 600V 50A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
50 A
150 A
1.85V @ 15V, 50A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IXYH55N120C4H1
IXYS

IGBT TRENCH 1200V 126A TO247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 126 A
  • Current - Collector Pulsed (Icm): 290 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 55A
  • Power - Max: 650 W
  • Switching Energy: 3.5mJ (on), 1.34mJ (off)
  • Input Type: Standard
  • Gate Charge: 114 nC
  • Td (on/off) @ 25°C: 20ns/180ns
  • Test Condition: 600V, 40A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 180 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
封装: -
Request a Quote
1200 V
126 A
290 A
2.5V @ 15V, 55A
650 W
3.5mJ (on), 1.34mJ (off)
Standard
114 nC
20ns/180ns
600V, 40A, 5Ohm, 15V
180 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)